DE69717768D1 - Speicher mit verbesserter Lesezeit - Google Patents
Speicher mit verbesserter LesezeitInfo
- Publication number
- DE69717768D1 DE69717768D1 DE69717768T DE69717768T DE69717768D1 DE 69717768 D1 DE69717768 D1 DE 69717768D1 DE 69717768 T DE69717768 T DE 69717768T DE 69717768 T DE69717768 T DE 69717768T DE 69717768 D1 DE69717768 D1 DE 69717768D1
- Authority
- DE
- Germany
- Prior art keywords
- memory
- read time
- improved read
- improved
- time
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/14—Dummy cell management; Sense reference voltage generators
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9613080A FR2755286B1 (fr) | 1996-10-25 | 1996-10-25 | Memoire a temps de lecture ameliore |
Publications (1)
Publication Number | Publication Date |
---|---|
DE69717768D1 true DE69717768D1 (de) | 2003-01-23 |
Family
ID=9497059
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69717768T Expired - Lifetime DE69717768D1 (de) | 1996-10-25 | 1997-10-15 | Speicher mit verbesserter Lesezeit |
Country Status (4)
Country | Link |
---|---|
US (1) | US5870336A (de) |
EP (1) | EP0838824B1 (de) |
DE (1) | DE69717768D1 (de) |
FR (1) | FR2755286B1 (de) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6038260A (en) * | 1996-01-05 | 2000-03-14 | International Business Machines Corporation | Method and apparatus for transposing differential signals onto a set of binary signals to increase the information-carrying capacity of the original set of signals |
JP3584181B2 (ja) * | 1999-05-27 | 2004-11-04 | シャープ株式会社 | 不揮発性半導体記憶装置 |
US6876582B2 (en) * | 2002-05-24 | 2005-04-05 | Hynix Semiconductor, Inc. | Flash memory cell erase scheme using both source and channel regions |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60125998A (ja) * | 1983-12-12 | 1985-07-05 | Fujitsu Ltd | 半導体記憶装置 |
JPH0373495A (ja) * | 1989-02-15 | 1991-03-28 | Ricoh Co Ltd | 半導体メモリ装置 |
JPH0346197A (ja) * | 1989-07-13 | 1991-02-27 | Fujitsu Ltd | 半導体記憶装置 |
GB8923037D0 (en) * | 1989-10-12 | 1989-11-29 | Inmos Ltd | Timing control for a memory |
IT1253678B (it) * | 1991-07-31 | 1995-08-22 | St Microelectronics Srl | Architettura antirumore per memoria |
JPH06176583A (ja) * | 1992-12-07 | 1994-06-24 | Toshiba Corp | 不揮発性半導体記憶装置 |
FR2714202B1 (fr) * | 1993-12-22 | 1996-01-12 | Sgs Thomson Microelectronics | Mémoire en circuit intégré à temps de lecture amélioré. |
DE69425367T2 (de) * | 1994-04-19 | 2001-02-15 | Stmicroelectronics S.R.L., Agrate Brianza | Leseschaltkreis für Speichermatrixzelle |
DE69621323T2 (de) * | 1995-02-10 | 2002-09-05 | Micron Technology, Inc. | Schneller leseverstärker für einen flash-speicher |
US5650966A (en) * | 1995-11-01 | 1997-07-22 | Advanced Micro Devices, Inc. | Temperature compensated reference for overerase correction circuitry in a flash memory |
-
1996
- 1996-10-25 FR FR9613080A patent/FR2755286B1/fr not_active Expired - Fee Related
-
1997
- 1997-10-15 EP EP97402429A patent/EP0838824B1/de not_active Expired - Lifetime
- 1997-10-15 DE DE69717768T patent/DE69717768D1/de not_active Expired - Lifetime
- 1997-10-24 US US08/957,666 patent/US5870336A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
FR2755286B1 (fr) | 1999-01-22 |
FR2755286A1 (fr) | 1998-04-30 |
EP0838824B1 (de) | 2002-12-11 |
US5870336A (en) | 1999-02-09 |
EP0838824A1 (de) | 1998-04-29 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8332 | No legal effect for de |