DE69712562D1 - Halbleiteranordnung mit einem auf einen Träger gelöteten Chip mit Durchgangsleitungen und Herstellungsverfahren dafür - Google Patents

Halbleiteranordnung mit einem auf einen Träger gelöteten Chip mit Durchgangsleitungen und Herstellungsverfahren dafür

Info

Publication number
DE69712562D1
DE69712562D1 DE69712562T DE69712562T DE69712562D1 DE 69712562 D1 DE69712562 D1 DE 69712562D1 DE 69712562 T DE69712562 T DE 69712562T DE 69712562 T DE69712562 T DE 69712562T DE 69712562 D1 DE69712562 D1 DE 69712562D1
Authority
DE
Germany
Prior art keywords
carrier
lines
production method
method therefor
semiconductor arrangement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69712562T
Other languages
English (en)
Other versions
DE69712562T2 (de
Inventor
Pierre Baudet
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Application granted granted Critical
Publication of DE69712562D1 publication Critical patent/DE69712562D1/de
Publication of DE69712562T2 publication Critical patent/DE69712562T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29111—Tin [Sn] as principal constituent
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/818—Bonding techniques
    • H01L2224/81801—Soldering or alloying
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    • H01L2924/01018—Argon [Ar]
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    • H01L2924/0105—Tin [Sn]
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    • H01L2924/01058—Cerium [Ce]
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    • H01L2924/01072—Hafnium [Hf]
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    • H01L2924/01082—Lead [Pb]
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    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
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    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/10155—Shape being other than a cuboid
    • H01L2924/10158—Shape being other than a cuboid at the passive surface
    • H—ELECTRICITY
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/1026—Compound semiconductors
    • H01L2924/1032—III-V
    • H01L2924/10329—Gallium arsenide [GaAs]
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H01L2924/141—Analog devices
    • H01L2924/1423—Monolithic Microwave Integrated Circuit [MMIC]
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19043—Component type being a resistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
DE69712562T 1996-02-28 1997-02-19 Halbleiteranordnung mit einem auf einen Träger gelöteten Chip mit Durchgangsleitungen und Herstellungsverfahren dafür Expired - Fee Related DE69712562T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9602492 1996-02-28

Publications (2)

Publication Number Publication Date
DE69712562D1 true DE69712562D1 (de) 2002-06-20
DE69712562T2 DE69712562T2 (de) 2002-12-19

Family

ID=9489670

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69712562T Expired - Fee Related DE69712562T2 (de) 1996-02-28 1997-02-19 Halbleiteranordnung mit einem auf einen Träger gelöteten Chip mit Durchgangsleitungen und Herstellungsverfahren dafür

Country Status (4)

Country Link
US (1) US5844321A (de)
EP (1) EP0793269B1 (de)
JP (1) JP4117042B2 (de)
DE (1) DE69712562T2 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3724110B2 (ja) * 1997-04-24 2005-12-07 三菱電機株式会社 半導体装置の製造方法
US20080099537A1 (en) * 2006-10-31 2008-05-01 Raytheon Company Method for sealing vias in a substrate
DE102009028037A1 (de) * 2009-07-27 2011-02-03 Robert Bosch Gmbh Bauelement mit einer elektrischen Durchkontaktierung, Verfahren zur Herstellung eines Bauelementes und Bauelementsystem
US9576873B2 (en) * 2011-12-14 2017-02-21 STATS ChipPAC Pte. Ltd. Integrated circuit packaging system with routable trace and method of manufacture thereof
JP7168280B2 (ja) * 2018-06-26 2022-11-09 住友電工デバイス・イノベーション株式会社 半導体装置、および、半導体チップの搭載方法
US10861792B2 (en) * 2019-03-25 2020-12-08 Raytheon Company Patterned wafer solder diffusion barrier

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02162735A (ja) * 1988-12-15 1990-06-22 Fujitsu Ltd 半導体装置及びその製造方法
US5027189A (en) * 1990-01-10 1991-06-25 Hughes Aircraft Company Integrated circuit solder die-attach design and method
FR2665574B1 (fr) * 1990-08-03 1997-05-30 Thomson Composants Microondes Procede d'interconnexion entre un circuit integre et un circuit support, et circuit integre adapte a ce procede.
US5350662A (en) * 1992-03-26 1994-09-27 Hughes Aircraft Company Maskless process for forming refractory metal layer in via holes of GaAs chips
US5635762A (en) * 1993-05-18 1997-06-03 U.S. Philips Corporation Flip chip semiconductor device with dual purpose metallized ground conductor
JP3350152B2 (ja) 1993-06-24 2002-11-25 三菱電機株式会社 半導体装置およびその製造方法

Also Published As

Publication number Publication date
DE69712562T2 (de) 2002-12-19
JP4117042B2 (ja) 2008-07-09
US5844321A (en) 1998-12-01
EP0793269A1 (de) 1997-09-03
EP0793269B1 (de) 2002-05-15
JPH09237857A (ja) 1997-09-09

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