DE69700379T2 - Elektrisch modifizierbarer nichtflüchtiger Mehrpegelspeicher mit internen Auffrischungsmitteln - Google Patents

Elektrisch modifizierbarer nichtflüchtiger Mehrpegelspeicher mit internen Auffrischungsmitteln

Info

Publication number
DE69700379T2
DE69700379T2 DE69700379T DE69700379T DE69700379T2 DE 69700379 T2 DE69700379 T2 DE 69700379T2 DE 69700379 T DE69700379 T DE 69700379T DE 69700379 T DE69700379 T DE 69700379T DE 69700379 T2 DE69700379 T2 DE 69700379T2
Authority
DE
Germany
Prior art keywords
refreshment
agents
internal
volatile memory
level non
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69700379T
Other languages
English (en)
Other versions
DE69700379D1 (de
Inventor
Emilio Miguel Yero
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Application granted granted Critical
Publication of DE69700379D1 publication Critical patent/DE69700379D1/de
Publication of DE69700379T2 publication Critical patent/DE69700379T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G11C16/3431—Circuits or methods to detect disturbed nonvolatile memory cells, e.g. which still read as programmed but with threshold less than the program verify threshold or read as erased but with threshold greater than the erase verify threshold, and to reverse the disturbance via a refreshing programming or erasing step
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
    • G11C2216/12—Reading and writing aspects of erasable programmable read-only memories
    • G11C2216/26—Floating gate memory which is adapted to be one-time programmable [OTP], e.g. containing multiple OTP blocks permitting limited update ability
DE69700379T 1996-10-25 1997-10-21 Elektrisch modifizierbarer nichtflüchtiger Mehrpegelspeicher mit internen Auffrischungsmitteln Expired - Fee Related DE69700379T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9613290A FR2755287B1 (fr) 1996-10-25 1996-10-25 Memoire non volatile multiniveau modifiable electriquement comportant des moyens de rafraichissement internes

Publications (2)

Publication Number Publication Date
DE69700379D1 DE69700379D1 (de) 1999-09-09
DE69700379T2 true DE69700379T2 (de) 1999-12-30

Family

ID=9497206

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69700379T Expired - Fee Related DE69700379T2 (de) 1996-10-25 1997-10-21 Elektrisch modifizierbarer nichtflüchtiger Mehrpegelspeicher mit internen Auffrischungsmitteln

Country Status (4)

Country Link
US (1) US6049497A (de)
EP (1) EP0838826B1 (de)
DE (1) DE69700379T2 (de)
FR (1) FR2755287B1 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6373769B1 (en) * 1997-06-12 2002-04-16 Infineon Technologies Ag Decoded autofresh mode in a DRAM
US6856568B1 (en) 2000-04-25 2005-02-15 Multi Level Memory Technology Refresh operations that change address mappings in a non-volatile memory
US7079422B1 (en) 2000-04-25 2006-07-18 Samsung Electronics Co., Ltd. Periodic refresh operations for non-volatile multiple-bit-per-cell memory
US6396744B1 (en) * 2000-04-25 2002-05-28 Multi Level Memory Technology Flash memory with dynamic refresh
JP2004023062A (ja) * 2002-06-20 2004-01-22 Nec Electronics Corp 半導体装置とその製造方法
US6751146B1 (en) * 2003-01-07 2004-06-15 Advanced Micro Devices, Inc. System and method for charge restoration in a non-volatile memory device
US6912168B2 (en) * 2003-03-18 2005-06-28 United Memories, Inc. Non-contiguous masked refresh for an integrated circuit memory
US7447096B2 (en) * 2006-05-05 2008-11-04 Honeywell International Inc. Method for refreshing a non-volatile memory
US11120884B2 (en) 2015-09-30 2021-09-14 Sunrise Memory Corporation Implementing logic function and generating analog signals using NOR memory strings
JP6837419B2 (ja) * 2017-12-05 2021-03-03 ルネサスエレクトロニクス株式会社 半導体記憶装置、及び半導体記憶装置のリフレッシュ方法
US11847333B2 (en) * 2019-07-31 2023-12-19 EMC IP Holding Company, LLC System and method for sub-block deduplication with search for identical sectors inside a candidate block
US11842777B2 (en) * 2020-11-17 2023-12-12 Sunrise Memory Corporation Methods for reducing disturb errors by refreshing data alongside programming or erase operations
TW202310429A (zh) 2021-07-16 2023-03-01 美商日升存儲公司 薄膜鐵電電晶體的三維記憶體串陣列

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5095344A (en) * 1988-06-08 1992-03-10 Eliyahou Harari Highly compact eprom and flash eeprom devices
US5283885A (en) * 1988-09-09 1994-02-01 Werner Hollerbauer Storage module including a refresh device for storing start and stop refresh addresses
US5251177A (en) * 1989-01-23 1993-10-05 Matsushita Electric Industrial Co., Ltd. Semiconductor memory device having an improved refresh operation
JPH05233426A (ja) * 1992-02-20 1993-09-10 Fujitsu Ltd フラッシュ・メモリ使用方法

Also Published As

Publication number Publication date
EP0838826A1 (de) 1998-04-29
FR2755287A1 (fr) 1998-04-30
FR2755287B1 (fr) 1998-12-31
EP0838826B1 (de) 1999-08-04
DE69700379D1 (de) 1999-09-09
US6049497A (en) 2000-04-11

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee