DE69629080D1 - Akustische Oberflächenwellenanordnung und Verfahren zu ihrer Herstellung - Google Patents

Akustische Oberflächenwellenanordnung und Verfahren zu ihrer Herstellung

Info

Publication number
DE69629080D1
DE69629080D1 DE69629080T DE69629080T DE69629080D1 DE 69629080 D1 DE69629080 D1 DE 69629080D1 DE 69629080 T DE69629080 T DE 69629080T DE 69629080 T DE69629080 T DE 69629080T DE 69629080 D1 DE69629080 D1 DE 69629080D1
Authority
DE
Germany
Prior art keywords
manufacture
acoustic wave
surface acoustic
wave device
wave
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69629080T
Other languages
English (en)
Other versions
DE69629080T2 (de
Inventor
Ryoichi Takayama
Keizaburo Kuramasu
Toshio Sugawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of DE69629080D1 publication Critical patent/DE69629080D1/de
Application granted granted Critical
Publication of DE69629080T2 publication Critical patent/DE69629080T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/64—Filters using surface acoustic waves
    • H03H9/6423—Means for obtaining a particular transfer characteristic
    • H03H9/6433—Coupled resonator filters
    • H03H9/6483—Ladder SAW filters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02818—Means for compensation or elimination of undesirable effects
    • H03H9/02897—Means for compensation or elimination of undesirable effects of strain or mechanical damage, e.g. strain due to bending influence
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02818—Means for compensation or elimination of undesirable effects
    • H03H9/02929—Means for compensation or elimination of undesirable effects of ageing changes of characteristics, e.g. electro-acousto-migration
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
    • H03H9/14538—Formation

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
DE69629080T 1995-09-01 1996-08-30 Akustische Oberflächenwellenanordnung und Verfahren zu ihrer Herstellung Expired - Lifetime DE69629080T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP22485595 1995-09-01
JP7224855A JPH0969748A (ja) 1995-09-01 1995-09-01 Ｓａｗデバイスおよびその製造方法

Publications (2)

Publication Number Publication Date
DE69629080D1 true DE69629080D1 (de) 2003-08-21
DE69629080T2 DE69629080T2 (de) 2004-02-12

Family

ID=16820229

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69629080T Expired - Lifetime DE69629080T2 (de) 1995-09-01 1996-08-30 Akustische Oberflächenwellenanordnung und Verfahren zu ihrer Herstellung

Country Status (8)

Country Link
US (1) US5844347A (de)
EP (2) EP1315296A1 (de)
JP (1) JPH0969748A (de)
KR (1) KR100405931B1 (de)
CN (1) CN1157806C (de)
DE (1) DE69629080T2 (de)
MY (1) MY116670A (de)
SG (1) SG47173A1 (de)

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JPH1174751A (ja) * 1997-08-28 1999-03-16 Murata Mfg Co Ltd 弾性表面波装置
KR100507784B1 (ko) 1998-04-21 2005-08-17 마쯔시다덴기산교 가부시키가이샤 탄성표면파 디바이스와 그 제조방법 및 이것을 사용한이동통신기기
JP3266109B2 (ja) * 1998-08-05 2002-03-18 株式会社村田製作所 電子デバイスの作製方法
JP3317273B2 (ja) * 1998-08-25 2002-08-26 株式会社村田製作所 表面波共振子、フィルタ、共用器、通信機装置
JP3351402B2 (ja) * 1999-04-28 2002-11-25 株式会社村田製作所 電子素子、弾性表面波素子、それらの実装方法、電子部品または弾性表面波装置の製造方法、および、弾性表面波装置
JP4352572B2 (ja) * 2000-04-03 2009-10-28 パナソニック株式会社 アンテナ共用器
KR100791708B1 (ko) * 2000-10-23 2008-01-03 마츠시타 덴끼 산교 가부시키가이샤 탄성 표면파 필터 및 그 제조 방법
JP3521864B2 (ja) 2000-10-26 2004-04-26 株式会社村田製作所 弾性表面波素子
JP3445971B2 (ja) * 2000-12-14 2003-09-16 富士通株式会社 弾性表面波素子
US6424238B1 (en) * 2001-01-08 2002-07-23 Motorola, Inc. Acoustic wave filter and method of forming the same
DE10206480B4 (de) * 2001-02-16 2005-02-10 Leibniz-Institut für Festkörper- und Werkstoffforschung e.V. Akustisches Oberflächenwellenbauelement
JP3926633B2 (ja) 2001-06-22 2007-06-06 沖電気工業株式会社 Ｓａｗデバイス及びその製造方法
US6965190B2 (en) * 2001-09-12 2005-11-15 Sanyo Electric Co., Ltd. Surface acoustic wave device
JP3735550B2 (ja) 2001-09-21 2006-01-18 Ｔｄｋ株式会社 弾性表面波装置およびその製造方法
TW569530B (en) * 2001-10-03 2004-01-01 Matsushita Electric Ind Co Ltd Surface acoustic wave device and electronic components using the device
JP3979279B2 (ja) * 2001-12-28 2007-09-19 株式会社村田製作所 弾性表面波装置
JP3780947B2 (ja) * 2002-01-18 2006-05-31 株式会社村田製作所 弾性表面波装置
US7148610B2 (en) * 2002-02-01 2006-12-12 Oc Oerlikon Balzers Ag Surface acoustic wave device having improved performance and method of making the device
DE10206369B4 (de) * 2002-02-15 2012-12-27 Epcos Ag Elektrodenstruktur mit verbesserter Leistungsverträglichkeit und Verfahren zur Herstellung
JP3841053B2 (ja) * 2002-07-24 2006-11-01 株式会社村田製作所 弾性表面波装置及びその製造方法
DE10236003B4 (de) * 2002-08-06 2013-12-24 Epcos Ag Verfahren zur Herstellung eines Bauelements mit leistungsverträglicher Elektrodenstruktur
JP3938147B2 (ja) * 2003-04-08 2007-06-27 住友金属鉱山株式会社 タンタル酸リチウム基板およびその製造方法
US20040256949A1 (en) * 2003-06-17 2004-12-23 Takuo Hada Surface acoustic wave device
US7141909B2 (en) 2003-06-17 2006-11-28 Murata Manufacturing Co., Ltd. Surface acoustic wave device
US7888842B2 (en) * 2004-02-13 2011-02-15 University Of Maine System Board Of Trustees Ultra-thin film electrodes and protective layer for high temperature device applications
JP2005269606A (ja) * 2004-02-18 2005-09-29 Sanyo Electric Co Ltd 弾性表面波素子及びこれを具えた弾性表面波フィルター
DE102004058016B4 (de) * 2004-12-01 2014-10-09 Epcos Ag Mit akustischen Oberflächenwellen arbeitendes Bauelement mit hoher Bandbreite
US7737612B1 (en) 2005-05-25 2010-06-15 Maxim Integrated Products, Inc. BAW resonator bi-layer top electrode with zero etch undercut
US7600303B1 (en) * 2006-05-25 2009-10-13 Maxim Integrated Products, Inc. BAW resonator bi-layer top electrode with zero etch undercut
US7612488B1 (en) 2007-01-16 2009-11-03 Maxim Integrated Products, Inc. Method to control BAW resonator top electrode edge during patterning
JP4811516B2 (ja) * 2007-03-06 2011-11-09 株式会社村田製作所 弾性境界波装置
JP5252264B2 (ja) * 2007-10-12 2013-07-31 Ｓｍｃ株式会社 流体用積層構造体
JP2008125131A (ja) * 2008-02-08 2008-05-29 Murata Mfg Co Ltd 表面波装置及びその製造方法
CN101369599B (zh) * 2008-07-11 2011-02-16 北京大学 氮化镓基器件的欧姆接触及其制备方法
CN101382522B (zh) * 2008-08-26 2011-01-26 北京中科飞鸿科技有限公司 用于气体检测的声表面波传感器芯片的制备方法
US7944750B1 (en) 2008-10-22 2011-05-17 Maxim Integrated Products, Inc. Multi-programmable non-volatile memory cell
US8963241B1 (en) 2009-11-13 2015-02-24 Maxim Integrated Products, Inc. Integrated MOS power transistor with poly field plate extension for depletion assist
US8987818B1 (en) 2009-11-13 2015-03-24 Maxim Integrated Products, Inc. Integrated MOS power transistor with thin gate oxide and low gate charge
US20110115018A1 (en) * 2009-11-13 2011-05-19 Maxim Integrated Products, Inc. Mos power transistor
US8969958B1 (en) 2009-11-13 2015-03-03 Maxim Integrated Products, Inc. Integrated MOS power transistor with body extension region for poly field plate depletion assist
US20110115019A1 (en) * 2009-11-13 2011-05-19 Maxim Integrated Products, Inc. Cmos compatible low gate charge lateral mosfet
US8946851B1 (en) 2009-11-13 2015-02-03 Maxim Integrated Products, Inc. Integrated MOS power transistor with thin gate oxide and low gate charge
US8630137B1 (en) 2010-02-15 2014-01-14 Maxim Integrated Products, Inc. Dynamic trim method for non-volatile memory products
AT509633A1 (de) 2010-03-29 2011-10-15 Ctr Carinthian Tech Res Ag Hochtemperaturbeständige, elektrisch leitfähige dünnschichten
US8349653B2 (en) 2010-06-02 2013-01-08 Maxim Integrated Products, Inc. Use of device assembly for a generalization of three-dimensional metal interconnect technologies
US10672748B1 (en) 2010-06-02 2020-06-02 Maxim Integrated Products, Inc. Use of device assembly for a generalization of three-dimensional heterogeneous technologies integration
JP5664655B2 (ja) * 2010-09-17 2015-02-04 株式会社村田製作所 弾性波装置
CN108735825B (zh) * 2017-04-13 2020-04-17 神华集团有限责任公司 太阳能电池背电极和太阳能电池及其制备方法
US11761077B2 (en) * 2018-08-01 2023-09-19 Medtronic Minimed, Inc. Sputtering techniques for biosensors
US11082029B2 (en) 2018-09-28 2021-08-03 Skyworks Solutions, Inc. Acoustic wave device with multi-layer interdigital transducer electrode

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US4445066A (en) * 1982-06-30 1984-04-24 Murata Manufacturing Co., Ltd. Electrode structure for a zinc oxide thin film transducer
US4477952A (en) * 1983-04-04 1984-10-23 General Electric Company Piezoelectric crystal electrodes and method of manufacture
CA1281810C (en) * 1984-02-20 1991-03-19 Stephen P. Rogerson Mounting of saw devices
JPS62272610A (ja) * 1986-05-21 1987-11-26 Hitachi Ltd 弾性表面波素子
JP3039971B2 (ja) * 1989-09-19 2000-05-08 株式会社日立製作所 接合型圧電装置及び製造方法並びに接合型圧電素子
JPH04288718A (ja) * 1991-02-22 1992-10-13 Seiko Epson Corp 弾性表面波素子の電極構造
JP3379049B2 (ja) * 1993-10-27 2003-02-17 富士通株式会社 表面弾性波素子とその製造方法

Also Published As

Publication number Publication date
KR100405931B1 (ko) 2004-04-14
US5844347A (en) 1998-12-01
MY116670A (en) 2004-03-31
EP0762641A1 (de) 1997-03-12
CN1149205A (zh) 1997-05-07
DE69629080T2 (de) 2004-02-12
EP0762641B1 (de) 2003-07-16
CN1157806C (zh) 2004-07-14
SG47173A1 (en) 1998-03-20
EP1315296A1 (de) 2003-05-28
JPH0969748A (ja) 1997-03-11

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: PANASONIC CORP., KADOMA, OSAKA, JP

8320 Willingness to grant licences declared (paragraph 23)