DE69620590D1 - Verfahren und Vorrichtung zum Regeln der Temperatur einer Reaktorwand - Google Patents
Verfahren und Vorrichtung zum Regeln der Temperatur einer ReaktorwandInfo
- Publication number
- DE69620590D1 DE69620590D1 DE69620590T DE69620590T DE69620590D1 DE 69620590 D1 DE69620590 D1 DE 69620590D1 DE 69620590 T DE69620590 T DE 69620590T DE 69620590 T DE69620590 T DE 69620590T DE 69620590 D1 DE69620590 D1 DE 69620590D1
- Authority
- DE
- Germany
- Prior art keywords
- temperature
- reaction chamber
- chamber
- air
- target temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4411—Cooling of the reaction chamber walls
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
- C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP96108108A EP0808917B1 (de) | 1996-05-21 | 1996-05-21 | Verfahren und Vorrichtung zum Regeln der Temperatur einer Reaktorwand |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69620590D1 true DE69620590D1 (de) | 2002-05-16 |
DE69620590T2 DE69620590T2 (de) | 2002-11-21 |
Family
ID=8222806
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69620590T Expired - Fee Related DE69620590T2 (de) | 1996-05-21 | 1996-05-21 | Verfahren und Vorrichtung zum Regeln der Temperatur einer Reaktorwand |
Country Status (3)
Country | Link |
---|---|
EP (4) | EP1143035B1 (de) |
AT (2) | ATE312955T1 (de) |
DE (1) | DE69620590T2 (de) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6023555A (en) * | 1998-08-17 | 2000-02-08 | Eaton Corporation | Radiant heating apparatus and method |
US6259072B1 (en) * | 1999-11-09 | 2001-07-10 | Axcelis Technologies, Inc. | Zone controlled radiant heating system utilizing focused reflector |
US6738683B1 (en) * | 2000-09-05 | 2004-05-18 | Cxe Equipment Services, Llc | Apparatus and method for cleaning a bell jar in a barrel epitaxial reactor |
TWI479559B (zh) * | 2007-06-28 | 2015-04-01 | Quantum Global Tech Llc | 以選擇性噴灑蝕刻來清潔腔室部件的方法和設備 |
DE102011083245B4 (de) | 2011-09-22 | 2019-04-25 | Siltronic Ag | Verfahren und Vorrichtung zum Abscheiden einer epitaktischen Schicht aus Silizium auf einer Halbleiterscheibe aus einkristallinem Silizium durch Gasphasenabscheidung in einer Prozesskammer |
US9530656B2 (en) | 2011-10-07 | 2016-12-27 | Lam Research Corporation | Temperature control in RF chamber with heater and air amplifier |
US9978565B2 (en) | 2011-10-07 | 2018-05-22 | Lam Research Corporation | Systems for cooling RF heated chamber components |
JP5940375B2 (ja) * | 2012-06-01 | 2016-06-29 | シャープ株式会社 | 気相成長装置および窒化物半導体発光素子の製造方法 |
TWI623960B (zh) * | 2013-03-27 | 2018-05-11 | 蘭姆研究公司 | 半導體製造設備及其處理方法 |
US10249493B2 (en) | 2015-12-30 | 2019-04-02 | Siltronic Ag | Method for depositing a layer on a semiconductor wafer by vapor deposition in a process chamber |
DE102018121854A1 (de) * | 2018-09-07 | 2020-03-12 | Aixtron Se | Verfahren zum Einrichten oder zum Betrieb eines CVD-Reaktors |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0164928A3 (de) * | 1984-06-04 | 1987-07-29 | Texas Instruments Incorporated | Senkrechter Heisswandreaktor zur chemischen Abscheidung aus der Gasphase |
IT1215444B (it) * | 1987-04-24 | 1990-02-14 | L P E S P A | Perfezionamenti ad induttori e suscettori impiegabili in reattori epitassiali. |
KR960012876B1 (ko) * | 1988-06-16 | 1996-09-25 | 도오교오 에레구토론 사가미 가부시끼가이샤 | 열처리 장치 |
US5155336A (en) * | 1990-01-19 | 1992-10-13 | Applied Materials, Inc. | Rapid thermal heating apparatus and method |
JP2892170B2 (ja) * | 1990-07-20 | 1999-05-17 | 株式会社東芝 | 熱処理成膜方法 |
JP2755876B2 (ja) * | 1992-07-30 | 1998-05-25 | 株式会社東芝 | 熱処理成膜装置 |
JPH07211663A (ja) * | 1994-01-27 | 1995-08-11 | Hitachi Ltd | 半導体製造装置 |
JP3094816B2 (ja) * | 1994-10-25 | 2000-10-03 | 信越半導体株式会社 | 薄膜の成長方法 |
-
1996
- 1996-05-21 EP EP01109786A patent/EP1143035B1/de not_active Expired - Lifetime
- 1996-05-21 EP EP01109788A patent/EP1136590A3/de not_active Withdrawn
- 1996-05-21 EP EP96108108A patent/EP0808917B1/de not_active Expired - Lifetime
- 1996-05-21 DE DE69620590T patent/DE69620590T2/de not_active Expired - Fee Related
- 1996-05-21 AT AT01109786T patent/ATE312955T1/de not_active IP Right Cessation
- 1996-05-21 EP EP01109787A patent/EP1143036A3/de not_active Withdrawn
- 1996-05-21 AT AT96108108T patent/ATE215998T1/de not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
DE69620590T2 (de) | 2002-11-21 |
EP1136590A3 (de) | 2002-01-02 |
EP1143036A2 (de) | 2001-10-10 |
ATE215998T1 (de) | 2002-04-15 |
EP1143035A2 (de) | 2001-10-10 |
ATE312955T1 (de) | 2005-12-15 |
EP0808917B1 (de) | 2002-04-10 |
EP0808917A1 (de) | 1997-11-26 |
EP1143035B1 (de) | 2005-12-14 |
EP1136590A2 (de) | 2001-09-26 |
EP1143035A3 (de) | 2001-11-28 |
EP1143036A3 (de) | 2001-11-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |