JPS57149731A - Exposing device - Google Patents

Exposing device

Info

Publication number
JPS57149731A
JPS57149731A JP56035070A JP3507081A JPS57149731A JP S57149731 A JPS57149731 A JP S57149731A JP 56035070 A JP56035070 A JP 56035070A JP 3507081 A JP3507081 A JP 3507081A JP S57149731 A JPS57149731 A JP S57149731A
Authority
JP
Japan
Prior art keywords
wafer
chuck
constitution
pipe
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56035070A
Other languages
Japanese (ja)
Inventor
Seiichi Iwamatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP56035070A priority Critical patent/JPS57149731A/en
Publication of JPS57149731A publication Critical patent/JPS57149731A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Exposure apparatus for microlithography
    • G03F7/70691Handling of masks or wafers
    • G03F7/707Chucks, e.g. chucking or un-chucking operations
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Exposure apparatus for microlithography
    • G03F7/708Construction of apparatus, e.g. environment, hygiene aspects or materials
    • G03F7/70858Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Exposure apparatus for microlithography
    • G03F7/708Construction of apparatus, e.g. environment, hygiene aspects or materials
    • G03F7/70858Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G03F7/70875Temperature

Abstract

PURPOSE:To prevent the temperature rise of the surface when exposing, and to obtain a minute pattern by forming an ejecting port contacting a gas controlled at a peripheral temperature or lower with the surface of a wafer. CONSTITUTION:The wafer 2 is placed on a base 1, and mounted under a chuck 3 for forming the flatness of the surface of the wafer. N2 cooled is ejected from the pipe 4 of the chuck 3, passed through the surface of the wafer and discharged from a pipe 5. Beams 6 passing an optical system are imaged onto the wafer 2. According to this constitution, the minute pattern of submicron can be worked particularly at desired accuracy because the temperature rise (approximately 2 deg.C) of the surface of the wafer through exposure can be prevented and undesired treatment due to a temperature change is obviated.
JP56035070A 1981-03-11 1981-03-11 Exposing device Pending JPS57149731A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56035070A JPS57149731A (en) 1981-03-11 1981-03-11 Exposing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56035070A JPS57149731A (en) 1981-03-11 1981-03-11 Exposing device

Publications (1)

Publication Number Publication Date
JPS57149731A true JPS57149731A (en) 1982-09-16

Family

ID=12431742

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56035070A Pending JPS57149731A (en) 1981-03-11 1981-03-11 Exposing device

Country Status (1)

Country Link
JP (1) JPS57149731A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59132618A (en) * 1983-01-19 1984-07-30 Toshiba Corp Method and apparatus for forming resist pattern
JPS59132619A (en) * 1983-01-19 1984-07-30 Toshiba Corp Method and apparatus for forming resist pattern
JPS59132127A (en) * 1983-01-19 1984-07-30 Toshiba Corp Method and apparatus for forming resist pattern
US4897337A (en) * 1983-01-19 1990-01-30 Tokyo Shibaura Denki Kabushiki Kaisha Method and apparatus for forming resist pattern
WO2005096101A1 (en) * 2004-03-30 2005-10-13 Pioneer Corporation Exposure equipment
WO2016169758A1 (en) * 2015-04-21 2016-10-27 Asml Netherlands B.V. Lithographic apparatus
WO2018041599A1 (en) * 2016-09-02 2018-03-08 Asml Netherlands B.V. Lithographic apparatus
US10453734B2 (en) 2015-07-02 2019-10-22 Asml Netherlands B.V. Substrate holder, a lithographic apparatus and method of manufacturing devices

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59132618A (en) * 1983-01-19 1984-07-30 Toshiba Corp Method and apparatus for forming resist pattern
JPS59132619A (en) * 1983-01-19 1984-07-30 Toshiba Corp Method and apparatus for forming resist pattern
JPS59132127A (en) * 1983-01-19 1984-07-30 Toshiba Corp Method and apparatus for forming resist pattern
US4897337A (en) * 1983-01-19 1990-01-30 Tokyo Shibaura Denki Kabushiki Kaisha Method and apparatus for forming resist pattern
JPH0480531B2 (en) * 1983-01-19 1992-12-18 Tokyo Shibaura Electric Co
WO2005096101A1 (en) * 2004-03-30 2005-10-13 Pioneer Corporation Exposure equipment
WO2016169758A1 (en) * 2015-04-21 2016-10-27 Asml Netherlands B.V. Lithographic apparatus
CN107771303A (en) * 2015-04-21 2018-03-06 Asml荷兰有限公司 Lithographic equipment
JP2018513421A (en) * 2015-04-21 2018-05-24 エーエスエムエル ネザーランズ ビー.ブイ. Lithographic apparatus
JP2021176018A (en) * 2015-04-21 2021-11-04 エーエスエムエル ネザーランズ ビー.ブイ. Cooling apparatus and method of using the same, and lithographic apparatus
US10416574B2 (en) 2015-04-21 2019-09-17 Asml Netherlands B.V Lithographic apparatus
US10935895B2 (en) 2015-04-21 2021-03-02 Asml Netherlands B.V. Lithographic apparatus
US10453734B2 (en) 2015-07-02 2019-10-22 Asml Netherlands B.V. Substrate holder, a lithographic apparatus and method of manufacturing devices
WO2018041599A1 (en) * 2016-09-02 2018-03-08 Asml Netherlands B.V. Lithographic apparatus
US10747127B2 (en) 2016-09-02 2020-08-18 Asml Netherlands B.V. Lithographic apparatus
JP2019529982A (en) * 2016-09-02 2019-10-17 エーエスエムエル ネザーランズ ビー.ブイ. Lithographic apparatus
CN109804313A (en) * 2016-09-02 2019-05-24 Asml荷兰有限公司 Lithographic equipment

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