DE69610035T2 - Siliziumthyristor für esd-schutz - Google Patents

Siliziumthyristor für esd-schutz

Info

Publication number
DE69610035T2
DE69610035T2 DE69610035T DE69610035T DE69610035T2 DE 69610035 T2 DE69610035 T2 DE 69610035T2 DE 69610035 T DE69610035 T DE 69610035T DE 69610035 T DE69610035 T DE 69610035T DE 69610035 T2 DE69610035 T2 DE 69610035T2
Authority
DE
Germany
Prior art keywords
esd protection
silicon thyristor
thyristor
silicon
esd
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69610035T
Other languages
English (en)
Other versions
DE69610035D1 (de
Inventor
Hung-Sheng Chen
Chin-Miin Shyu
S Teng
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Semiconductor Corp
Original Assignee
National Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Semiconductor Corp filed Critical National Semiconductor Corp
Publication of DE69610035D1 publication Critical patent/DE69610035D1/de
Application granted granted Critical
Publication of DE69610035T2 publication Critical patent/DE69610035T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7436—Lateral thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0259—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
    • H01L29/7412—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/87—Thyristor diodes, e.g. Shockley diodes, break-over diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Thyristors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
DE69610035T 1995-01-18 1996-01-03 Siliziumthyristor für esd-schutz Expired - Lifetime DE69610035T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/374,135 US5602404A (en) 1995-01-18 1995-01-18 Low voltage triggering silicon controlled rectifier structures for ESD protection
PCT/US1996/000223 WO1996022614A1 (en) 1995-01-18 1996-01-03 Silicon controlled rectifier for esd protection

Publications (2)

Publication Number Publication Date
DE69610035D1 DE69610035D1 (de) 2000-10-05
DE69610035T2 true DE69610035T2 (de) 2001-04-05

Family

ID=23475456

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69610035T Expired - Lifetime DE69610035T2 (de) 1995-01-18 1996-01-03 Siliziumthyristor für esd-schutz

Country Status (5)

Country Link
US (1) US5602404A (de)
EP (1) EP0750793B1 (de)
KR (1) KR100305238B1 (de)
DE (1) DE69610035T2 (de)
WO (1) WO1996022614A1 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10348446A1 (de) * 2003-10-14 2005-06-02 Zentrum Mikroelektronik Dresden Ag Anordnung für eine ESD-Schutzschaltung

Families Citing this family (62)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2850801B2 (ja) * 1995-07-28 1999-01-27 日本電気株式会社 半導体素子
US5856214A (en) * 1996-03-04 1999-01-05 Winbond Electronics Corp. Method of fabricating a low voltage zener-triggered SCR for ESD protection in integrated circuits
US5808343A (en) * 1996-09-20 1998-09-15 Integrated Device Technology, Inc. Input structure for digital integrated circuits
US5814865A (en) * 1996-10-31 1998-09-29 Texas Instruments Incorporated Bimodal ESD protection for DRAM power supplies and SCRs for DRAMs and logic circuits
US5780905A (en) * 1996-12-17 1998-07-14 Texas Instruments Incorporated Asymmetrical, bidirectional triggering ESD structure
US5825600A (en) * 1997-04-25 1998-10-20 Cypress Semiconductor Corp. Fast turn-on silicon controlled rectifier (SCR) for electrostatic discharge (ESD) protection
US6049119A (en) * 1998-05-01 2000-04-11 Motorola, Inc. Protection circuit for a semiconductor device
US7327541B1 (en) 1998-06-19 2008-02-05 National Semiconductor Corporation Operation of dual-directional electrostatic discharge protection device
US6365924B1 (en) 1998-06-19 2002-04-02 National Semiconductor Corporation Dual direction over-voltage and over-current IC protection device and its cell structure
JP4256544B2 (ja) * 1998-08-25 2009-04-22 シャープ株式会社 半導体集積回路の静電気保護装置、その製造方法および静電気保護装置を用いた静電気保護回路
US6015993A (en) 1998-08-31 2000-01-18 International Business Machines Corporation Semiconductor diode with depleted polysilicon gate structure and method
KR100275757B1 (ko) 1998-08-31 2001-01-15 김덕중 반도체 정류 소자 및 이를 제조하는 방법
US6501137B1 (en) * 1998-12-30 2002-12-31 Winbond Electronics Corp. Electrostatic discharge protection circuit triggered by PNP bipolar action
KR100518526B1 (ko) * 1999-02-25 2005-10-04 삼성전자주식회사 사이리스터의 트리거 전류를 이용한 정전하 방전회로
EP1058308B8 (de) * 1999-06-01 2010-04-07 Imec ESD-Schutz-Bauteil für mittlere Triggerspannung
US20040207020A1 (en) * 1999-09-14 2004-10-21 Shiao-Chien Chen CMOS silicon-control-rectifier (SCR) structure for electrostatic discharge (ESD) protection
JP2001358227A (ja) * 2000-04-26 2001-12-26 Sharp Corp 出力段の静電気放電保護のための少量ドープされたレジスタの使用
US6493199B1 (en) * 2000-10-26 2002-12-10 Winbond Electronics Corporation Vertical zener-triggered SCR structure for ESD protection in integrated circuits
US6850397B2 (en) * 2000-11-06 2005-02-01 Sarnoff Corporation Silicon controlled rectifier electrostatic discharge protection device for power supply lines with powerdown mode of operation
EP1348236B1 (de) * 2000-11-06 2007-08-15 Sarnoff Corporation Schutzvorrichtung gegen elektrostatische Entladung mit gesteuertem Siliziumgleichrichter mit externem On-Chip-Triggern und kompakten inneren Abmessungen für schnelles Triggern
US6498357B2 (en) * 2001-02-09 2002-12-24 United Microelectronics Corp. Lateral SCR device for on-chip ESD protection in shallow-trench-isolation CMOS process
US7589944B2 (en) * 2001-03-16 2009-09-15 Sofics Bvba Electrostatic discharge protection structures for high speed technologies with mixed and ultra-low voltage supplies
US6576959B2 (en) * 2001-04-10 2003-06-10 Texas Instruments Incorporated Device and method of low voltage SCR protection for high voltage failsafe ESD applications
US6507090B1 (en) * 2001-12-03 2003-01-14 Nano Silicon Pte. Ltd. Fully silicide cascaded linked electrostatic discharge protection
CN100401512C (zh) * 2002-03-26 2008-07-09 华邦电子股份有限公司 利用硅控整流器的静电放电保护电路
US6784029B1 (en) * 2002-04-12 2004-08-31 National Semiconductor Corporation Bi-directional ESD protection structure for BiCMOS technology
US6777721B1 (en) * 2002-11-14 2004-08-17 Altera Corporation SCR device for ESD protection
US6864537B1 (en) 2003-01-03 2005-03-08 Micrel, Incorporated Thick gate oxide transistor and electrostatic discharge protection utilizing thick gate oxide transistors
US6861711B2 (en) * 2003-01-03 2005-03-01 Micrel, Incorporated Thick gate oxide transistor and electrostatic discharge protection utilizing thick gate oxide transistors
US6888710B2 (en) * 2003-01-03 2005-05-03 Micrel, Incorporated Insulated gate bipolar transistor and electrostatic discharge cell protection utilizing insulated gate bipolar transistors
US7193251B1 (en) * 2003-01-09 2007-03-20 National Semiconductor Corporation ESD protection cluster and method of providing multi-port ESD protection
KR100504203B1 (ko) * 2003-03-20 2005-07-28 매그나칩 반도체 유한회사 반도체장치의 보호소자
JP4176564B2 (ja) * 2003-06-23 2008-11-05 株式会社東芝 ウェハ移載装置及びこれを用いた半導体装置の製造方法
US6989572B2 (en) 2003-07-09 2006-01-24 Semiconductor Components Industries, L.L.C. Symmetrical high frequency SCR structure
US20050275029A1 (en) * 2004-06-15 2005-12-15 Jeffrey Watt Fast turn-on and low-capacitance SCR ESD protection
JP2006080160A (ja) * 2004-09-07 2006-03-23 Toshiba Corp 静電保護回路
US7408754B1 (en) 2004-11-18 2008-08-05 Altera Corporation Fast trigger ESD device for protection of integrated circuits
DE102005019305B4 (de) * 2005-04-26 2010-04-22 Infineon Technologies Ag ESD-Schutzstruktur mit Diodenreihenschaltung und Halbleiterschaltung mit derselben
US7659558B1 (en) 2005-09-23 2010-02-09 Cypress Semiconductor Corporation Silicon controlled rectifier electrostatic discharge clamp for a high voltage laterally diffused MOS transistor
US7838937B1 (en) 2005-09-23 2010-11-23 Cypress Semiconductor Corporation Circuits providing ESD protection to high voltage laterally diffused metal oxide semiconductor (LDMOS) transistors
CN100454540C (zh) * 2005-12-19 2009-01-21 厦门大学 半导体开关器件
US8129788B1 (en) 2006-01-24 2012-03-06 Cypress Semiconductor Corporation Capacitor triggered silicon controlled rectifier
US7768068B1 (en) 2006-06-05 2010-08-03 Cypress Semiconductor Corporation Drain extended MOS transistor with increased breakdown voltage
US7940499B2 (en) * 2006-09-15 2011-05-10 Semiconductor Components Industries, Llc Multi-pad shared current dissipation with heterogenic current protection structures
US7456441B2 (en) * 2006-09-15 2008-11-25 Semiconductor Components Industries, Llc Single well excess current dissipation circuit
US7601990B2 (en) 2006-10-25 2009-10-13 Delphi Technologies, Inc. Method and apparatus for electrostatic discharge protection having a stable breakdown voltage and low snapback voltage
JP4695622B2 (ja) 2007-05-02 2011-06-08 株式会社東芝 半導体装置
US8737027B1 (en) 2007-07-27 2014-05-27 Cypress Semiconductor Corporation ESD protection device with charge collections regions
US7919817B2 (en) * 2008-05-16 2011-04-05 Alpha & Omega Semiconductor Ltd. Electrostatic discharge (ESD) protection applying high voltage lightly doped drain (LDD) CMOS technologies
CN102157519B (zh) * 2011-01-28 2015-05-20 上海华虹宏力半导体制造有限公司 硅控整流器
JP5431379B2 (ja) * 2011-02-03 2014-03-05 シャープ株式会社 ダイオード保護回路、ｌｎｂ、およびアンテナシステム
EP2763171B1 (de) * 2011-09-29 2017-10-25 CSMC Technologies Fab1 Co., Ltd. Schutzvorrichtung für elektrostatische entladung
US8492866B1 (en) 2012-01-09 2013-07-23 International Business Machines Corporation Isolated Zener diode
US9018673B2 (en) 2012-08-31 2015-04-28 Freescale Semiconductor Inc. Zener diode device and fabrication
US9704849B2 (en) 2013-10-18 2017-07-11 Nxp Usa, Inc. Electrostatic discharge protection device structures and methods of manufacture
US9099487B2 (en) * 2013-12-05 2015-08-04 Freescale Semiconductor Inc. Zener diode devices and related fabrication methods
US9337266B2 (en) * 2014-09-30 2016-05-10 Micron Technology, Inc. Methods and apparatuses including an active area of a tap intersected by a boundary of a well
EP3116027A1 (de) 2015-07-10 2017-01-11 Nxp B.V. Vorrichtung für elektrostatischen entladungsschutz mit einem siliciumgesteuerten gleichrichter
US10121777B2 (en) * 2016-04-25 2018-11-06 Novatek Microelectronics Corp. Silicon controlled rectifier
US10679991B2 (en) 2018-10-12 2020-06-09 Micron Technology, Inc. Methods and apparatuses including a boundary of a well beneath an active area of a tap
US10580765B1 (en) * 2018-12-02 2020-03-03 Nanya Technology Corporation Semiconductor structure for electrostatic discharge protection
CN112510033A (zh) * 2020-10-14 2021-03-16 上海华力微电子有限公司 一种硅控整流器及其制造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL272752A (de) * 1960-12-20
JPS5310285A (en) * 1976-07-15 1978-01-30 Mitsubishi Electric Corp Reverse conducting thyristor
JPS5568859A (en) * 1978-11-17 1980-05-23 Hitachi Ltd Method of winding two pole multilayer winding in groove-less armature
SE423946B (sv) * 1980-10-08 1982-06-14 Asea Ab Tyristor anordnad for sjelvtendning
IT1212767B (it) * 1983-07-29 1989-11-30 Ates Componenti Elettron Soppressore di sovratensioni a semiconduttore con tensione d'innesco predeterminabile con precisione.
US5285100A (en) * 1988-07-22 1994-02-08 Texas Instruments Incorporated Semiconductor switching device
GB2221088B (en) * 1988-07-22 1992-02-26 Texas Instruments Ltd A semiconductor switching device
US5276350A (en) * 1991-02-07 1994-01-04 National Semiconductor Corporation Low reverse junction breakdown voltage zener diode for electrostatic discharge protection of integrated circuits
US5225702A (en) * 1991-12-05 1993-07-06 Texas Instruments Incorporated Silicon controlled rectifier structure for electrostatic discharge protection
US5343053A (en) * 1993-05-21 1994-08-30 David Sarnoff Research Center Inc. SCR electrostatic discharge protection for integrated circuits
US5401485A (en) * 1994-03-15 1995-03-28 Shell Oil Company Reduction of residual chloride in iron oxides

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10348446A1 (de) * 2003-10-14 2005-06-02 Zentrum Mikroelektronik Dresden Ag Anordnung für eine ESD-Schutzschaltung
DE10348446B4 (de) * 2003-10-14 2011-12-15 Zentrum Mikroelektronik Dresden Ag Anordnung für eine ESD-Schutzschaltung

Also Published As

Publication number Publication date
KR100305238B1 (ko) 2001-09-24
DE69610035D1 (de) 2000-10-05
US5602404A (en) 1997-02-11
EP0750793A1 (de) 1997-01-02
WO1996022614A1 (en) 1996-07-25
EP0750793B1 (de) 2000-08-30

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition