DE69609053T2 - Integrierte Struktur mit reduziertem Injektionsstrom zwischen homologen Gebieten - Google Patents

Integrierte Struktur mit reduziertem Injektionsstrom zwischen homologen Gebieten

Info

Publication number
DE69609053T2
DE69609053T2 DE69609053T DE69609053T DE69609053T2 DE 69609053 T2 DE69609053 T2 DE 69609053T2 DE 69609053 T DE69609053 T DE 69609053T DE 69609053 T DE69609053 T DE 69609053T DE 69609053 T2 DE69609053 T2 DE 69609053T2
Authority
DE
Germany
Prior art keywords
integrated structure
injection current
reduced injection
homologous areas
homologous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69609053T
Other languages
English (en)
Other versions
DE69609053D1 (de
Inventor
Salvatore Scaccianoce
Stefano Sueri
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CORIMME Consorzio per Ricerca Sulla Microelettronica nel Mezzogiorno
Original Assignee
CORIMME Consorzio per Ricerca Sulla Microelettronica nel Mezzogiorno
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CORIMME Consorzio per Ricerca Sulla Microelettronica nel Mezzogiorno filed Critical CORIMME Consorzio per Ricerca Sulla Microelettronica nel Mezzogiorno
Application granted granted Critical
Publication of DE69609053D1 publication Critical patent/DE69609053D1/de
Publication of DE69609053T2 publication Critical patent/DE69609053T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0828—Combination of direct and inverse vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0821—Combination of lateral and vertical transistors only

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
DE69609053T 1996-05-14 1996-05-14 Integrierte Struktur mit reduziertem Injektionsstrom zwischen homologen Gebieten Expired - Fee Related DE69609053T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP96830277A EP0809301B1 (de) 1996-05-14 1996-05-14 Integrierte Struktur mit reduziertem Injektionsstrom zwischen homologen Gebieten

Publications (2)

Publication Number Publication Date
DE69609053D1 DE69609053D1 (de) 2000-08-03
DE69609053T2 true DE69609053T2 (de) 2001-03-29

Family

ID=8225908

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69609053T Expired - Fee Related DE69609053T2 (de) 1996-05-14 1996-05-14 Integrierte Struktur mit reduziertem Injektionsstrom zwischen homologen Gebieten

Country Status (4)

Country Link
US (1) US6060762A (de)
EP (1) EP0809301B1 (de)
JP (1) JPH1056074A (de)
DE (1) DE69609053T2 (de)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61268036A (ja) * 1985-05-23 1986-11-27 Toshiba Corp 半導体装置
JPS62136872A (ja) * 1985-12-11 1987-06-19 Oki Electric Ind Co Ltd バイポ−ラ型半導体集積回路装置の製造方法
DE58907969D1 (de) * 1988-02-15 1994-08-04 Siemens Ag Schaltungsanordnung zum Schutze einer integrierten Schaltung.
US5287047A (en) * 1991-03-15 1994-02-15 Rohm Co., Ltd. Motor drive circuit and motor drive system using the same
US5514901A (en) * 1994-05-17 1996-05-07 Allegro Microsystems, Inc. Epitaxial island with adjacent asymmetrical structure to reduce collection of injected current from the island into other islands

Also Published As

Publication number Publication date
EP0809301B1 (de) 2000-06-28
EP0809301A1 (de) 1997-11-26
JPH1056074A (ja) 1998-02-24
US6060762A (en) 2000-05-09
DE69609053D1 (de) 2000-08-03

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee