DE69607940D1 - Chemisch-mechanisches polieren von dünnen materialen mittels eines impuls polierverfahren - Google Patents

Chemisch-mechanisches polieren von dünnen materialen mittels eines impuls polierverfahren

Info

Publication number
DE69607940D1
DE69607940D1 DE69607940T DE69607940T DE69607940D1 DE 69607940 D1 DE69607940 D1 DE 69607940D1 DE 69607940 T DE69607940 T DE 69607940T DE 69607940 T DE69607940 T DE 69607940T DE 69607940 D1 DE69607940 D1 DE 69607940D1
Authority
DE
Germany
Prior art keywords
impulse
chemical
polishing
thin materials
mechanical polishing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69607940T
Other languages
English (en)
Other versions
DE69607940T2 (de
Inventor
Isidore Salugsugan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
GlobalFoundries Inc
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Publication of DE69607940D1 publication Critical patent/DE69607940D1/de
Application granted granted Critical
Publication of DE69607940T2 publication Critical patent/DE69607940T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
DE69607940T 1995-02-06 1996-01-11 Chemisch-mechanisches polieren von dünnen materialen mittels eines impuls polierverfahren Expired - Lifetime DE69607940T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/383,737 US5486265A (en) 1995-02-06 1995-02-06 Chemical-mechanical polishing of thin materials using a pulse polishing technique
PCT/US1996/000151 WO1996024466A1 (en) 1995-02-06 1996-01-11 Chemical-mechanical polishing of thin materials using a pulse polishing technique

Publications (2)

Publication Number Publication Date
DE69607940D1 true DE69607940D1 (de) 2000-05-31
DE69607940T2 DE69607940T2 (de) 2000-11-30

Family

ID=23514490

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69607940T Expired - Lifetime DE69607940T2 (de) 1995-02-06 1996-01-11 Chemisch-mechanisches polieren von dünnen materialen mittels eines impuls polierverfahren

Country Status (6)

Country Link
US (1) US5486265A (de)
EP (1) EP0808230B1 (de)
JP (1) JPH10513121A (de)
KR (1) KR100399877B1 (de)
DE (1) DE69607940T2 (de)
WO (1) WO1996024466A1 (de)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5688364A (en) * 1994-12-22 1997-11-18 Sony Corporation Chemical-mechanical polishing method and apparatus using ultrasound applied to the carrier and platen
JPH08257902A (ja) * 1995-03-28 1996-10-08 Ebara Corp ポリッシング装置
US5665201A (en) * 1995-06-06 1997-09-09 Advanced Micro Devices, Inc. High removal rate chemical-mechanical polishing
JP2850803B2 (ja) * 1995-08-01 1999-01-27 信越半導体株式会社 ウエーハ研磨方法
JPH0955362A (ja) * 1995-08-09 1997-02-25 Cypress Semiconductor Corp スクラッチを減少する集積回路の製造方法
US5665202A (en) * 1995-11-24 1997-09-09 Motorola, Inc. Multi-step planarization process using polishing at two different pad pressures
EP0779655A3 (de) * 1995-12-14 1997-07-16 International Business Machines Corporation Verfahren zum chemisch-mechanischen Polieren eines Halbleitersubstrats eines elektronischen Bauteils
KR100241537B1 (ko) * 1996-06-21 2000-02-01 김영환 반도체 소자의 층간 절연막 평탄화 방법
US5968851A (en) * 1997-03-19 1999-10-19 Cypress Semiconductor Corp. Controlled isotropic etch process and method of forming an opening in a dielectric layer
US6007411A (en) * 1997-06-19 1999-12-28 Interantional Business Machines Corporation Wafer carrier for chemical mechanical polishing
US6139406A (en) 1997-06-24 2000-10-31 Applied Materials, Inc. Combined slurry dispenser and rinse arm and method of operation
US6143663A (en) * 1998-01-22 2000-11-07 Cypress Semiconductor Corporation Employing deionized water and an abrasive surface to polish a semiconductor topography
US6200896B1 (en) 1998-01-22 2001-03-13 Cypress Semiconductor Corporation Employing an acidic liquid and an abrasive surface to polish a semiconductor topography
US6171180B1 (en) 1998-03-31 2001-01-09 Cypress Semiconductor Corporation Planarizing a trench dielectric having an upper surface within a trench spaced below an adjacent polish stop surface
US6113465A (en) * 1998-06-16 2000-09-05 Speedfam-Ipec Corporation Method and apparatus for improving die planarity and global uniformity of semiconductor wafers in a chemical mechanical polishing context
US6129610A (en) * 1998-08-14 2000-10-10 International Business Machines Corporation Polish pressure modulation in CMP to preferentially polish raised features
US5972124A (en) * 1998-08-31 1999-10-26 Advanced Micro Devices, Inc. Method for cleaning a surface of a dielectric material
US6232231B1 (en) 1998-08-31 2001-05-15 Cypress Semiconductor Corporation Planarized semiconductor interconnect topography and method for polishing a metal layer to form interconnect
US6534378B1 (en) 1998-08-31 2003-03-18 Cypress Semiconductor Corp. Method for forming an integrated circuit device
US6566249B1 (en) 1998-11-09 2003-05-20 Cypress Semiconductor Corp. Planarized semiconductor interconnect topography and method for polishing a metal layer to form wide interconnect structures
US6319098B1 (en) * 1998-11-13 2001-11-20 Applied Materials, Inc. Method of post CMP defect stability improvement
US6165052A (en) * 1998-11-16 2000-12-26 Taiwan Semiconductor Manufacturing Company Method and apparatus for chemical/mechanical planarization (CMP) of a semiconductor substrate having shallow trench isolation
US6287972B1 (en) 1999-03-04 2001-09-11 Philips Semiconductor, Inc. System and method for residue entrapment utilizing a polish and sacrificial fill for semiconductor fabrication
US6217418B1 (en) 1999-04-14 2001-04-17 Advanced Micro Devices, Inc. Polishing pad and method for polishing porous materials
US6783643B2 (en) * 1999-06-22 2004-08-31 President And Fellows Of Harvard College Control of solid state dimensional features
US6669538B2 (en) 2000-02-24 2003-12-30 Applied Materials Inc Pad cleaning for a CMP system
US6969684B1 (en) 2001-04-30 2005-11-29 Cypress Semiconductor Corp. Method of making a planarized semiconductor structure
KR20030054673A (ko) * 2001-12-26 2003-07-02 주식회사 하이닉스반도체 반도체소자의 제조방법
US6828678B1 (en) 2002-03-29 2004-12-07 Silicon Magnetic Systems Semiconductor topography with a fill material arranged within a plurality of valleys associated with the surface roughness of the metal layer
JP2004207422A (ja) * 2002-12-25 2004-07-22 Matsushita Electric Ind Co Ltd 半導体装置の研磨方法、半導体装置の製造方法および研磨装置
US10276537B2 (en) * 2017-09-25 2019-04-30 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated fan-out package and manufacturing method thereof

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3841031A (en) * 1970-10-21 1974-10-15 Monsanto Co Process for polishing thin elements
US3911562A (en) * 1974-01-14 1975-10-14 Signetics Corp Method of chemical polishing of planar silicon structures having filled grooves therein
US4022625A (en) * 1974-12-24 1977-05-10 Nl Industries, Inc. Polishing composition and method of polishing
US4193226A (en) * 1977-09-21 1980-03-18 Kayex Corporation Polishing apparatus
US4511605A (en) * 1980-09-18 1985-04-16 Norwood Industries, Inc. Process for producing polishing pads comprising a fully impregnated non-woven batt
CA1169022A (en) * 1982-04-19 1984-06-12 Kevin Duncan Integrated circuit planarizing process
US4944836A (en) * 1985-10-28 1990-07-31 International Business Machines Corporation Chem-mech polishing method for producing coplanar metal/insulator films on a substrate
JPS62162464A (ja) * 1986-01-07 1987-07-18 Hitachi Ltd ラツピング装置
US4811522A (en) * 1987-03-23 1989-03-14 Gill Jr Gerald L Counterbalanced polishing apparatus
JPH079896B2 (ja) * 1988-10-06 1995-02-01 信越半導体株式会社 研磨装置
US5166101A (en) * 1989-09-28 1992-11-24 Applied Materials, Inc. Method for forming a boron phosphorus silicate glass composite layer on a semiconductor wafer
US5203119A (en) * 1991-03-22 1993-04-20 Read-Rite Corporation Automated system for lapping air bearing surface of magnetic heads
US5069002A (en) * 1991-04-17 1991-12-03 Micron Technology, Inc. Apparatus for endpoint detection during mechanical planarization of semiconductor wafers
US5245794A (en) * 1992-04-09 1993-09-21 Advanced Micro Devices, Inc. Audio end point detector for chemical-mechanical polishing and method therefor
US5384986A (en) * 1992-09-24 1995-01-31 Ebara Corporation Polishing apparatus

Also Published As

Publication number Publication date
WO1996024466A1 (en) 1996-08-15
EP0808230B1 (de) 2000-04-26
KR100399877B1 (ko) 2003-12-31
JPH10513121A (ja) 1998-12-15
DE69607940T2 (de) 2000-11-30
US5486265A (en) 1996-01-23
KR19980701410A (ko) 1998-05-15
EP0808230A1 (de) 1997-11-26

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: GLOBALFOUNDRIES INC. MAPLES CORPORATE SERVICES, KY