DE69524318D1 - Verfahren zur Untersuchung von Einkristall-Silizium - Google Patents

Verfahren zur Untersuchung von Einkristall-Silizium

Info

Publication number
DE69524318D1
DE69524318D1 DE69524318T DE69524318T DE69524318D1 DE 69524318 D1 DE69524318 D1 DE 69524318D1 DE 69524318 T DE69524318 T DE 69524318T DE 69524318 T DE69524318 T DE 69524318T DE 69524318 D1 DE69524318 D1 DE 69524318D1
Authority
DE
Germany
Prior art keywords
investigation
single crystal
crystal silicon
silicon
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69524318T
Other languages
English (en)
Other versions
DE69524318T2 (de
Inventor
Hiroshi Takeno
Ryoji Hoshi
Satoshi Ushio
Takao Takenaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Application granted granted Critical
Publication of DE69524318D1 publication Critical patent/DE69524318D1/de
Publication of DE69524318T2 publication Critical patent/DE69524318T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
    • G01N23/207—Diffractometry using detectors, e.g. using a probe in a central position and one or more displaceable detectors in circumferential positions

Landscapes

  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
DE69524318T 1994-09-08 1995-09-01 Verfahren zur Untersuchung von Einkristall-Silizium Expired - Fee Related DE69524318T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6240630A JP2681613B2 (ja) 1994-09-08 1994-09-08 シリコン単結晶の評価方法

Publications (2)

Publication Number Publication Date
DE69524318D1 true DE69524318D1 (de) 2002-01-17
DE69524318T2 DE69524318T2 (de) 2002-08-22

Family

ID=17062361

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69524318T Expired - Fee Related DE69524318T2 (de) 1994-09-08 1995-09-01 Verfahren zur Untersuchung von Einkristall-Silizium

Country Status (4)

Country Link
US (1) US5598452A (de)
EP (1) EP0701119B1 (de)
JP (1) JP2681613B2 (de)
DE (1) DE69524318T2 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6477685B1 (en) * 1999-09-22 2002-11-05 Texas Instruments Incorporated Method and apparatus for yield and failure analysis in the manufacturing of semiconductors
JP4952871B2 (ja) * 2001-06-27 2012-06-13 信越半導体株式会社 シリコンウェーハの評価方法
WO2007056142A2 (en) * 2005-11-02 2007-05-18 Theraquest Biosciences, Llc Methods of preventing the serotonin syndrome and compositions for use therefor
US8329744B2 (en) * 2005-11-02 2012-12-11 Relmada Therapeutics, Inc. Methods of preventing the serotonin syndrome and compositions for use thereof
WO2008134071A1 (en) * 2007-04-26 2008-11-06 Theraquest Biosciences, Inc. Multimodal abuse resistant extended release formulations
BR112012007405B1 (pt) 2009-09-25 2018-03-20 Pyrolyx Ag Processo e aparelho para tratamento térmico de estágios múltiplos de resíduo de borracha, em particular, refugos de pneumáticos.
JP6245156B2 (ja) * 2014-12-02 2017-12-13 信越半導体株式会社 シリコンウェーハの評価方法
JP6979007B2 (ja) * 2018-12-17 2021-12-08 グローバルウェーハズ・ジャパン株式会社 シリコンウェーハの極低酸素濃度測定方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07104295B2 (ja) * 1987-08-01 1995-11-13 九州電子金属株式会社 半導体用単結晶基板の結晶欠陥密度および析出酸素濃度測定方法
JP2569862B2 (ja) * 1990-02-13 1997-01-08 三菱電機株式会社 Ｘ線露光装置およびｘ線露光方法
JPH05113416A (ja) * 1990-07-23 1993-05-07 Stiftung Deutsche Elektronen Synchrotron Desy 単結晶材料の異質相の析出を検査する方法

Also Published As

Publication number Publication date
US5598452A (en) 1997-01-28
EP0701119A1 (de) 1996-03-13
DE69524318T2 (de) 2002-08-22
JP2681613B2 (ja) 1997-11-26
JPH0875680A (ja) 1996-03-22
EP0701119B1 (de) 2001-12-05

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee