DE69601981T2 - Herstellungsverfahren einer halbleiteranordnung aus siliziumkarbid - Google Patents

Herstellungsverfahren einer halbleiteranordnung aus siliziumkarbid

Info

Publication number
DE69601981T2
DE69601981T2 DE69601981T DE69601981T DE69601981T2 DE 69601981 T2 DE69601981 T2 DE 69601981T2 DE 69601981 T DE69601981 T DE 69601981T DE 69601981 T DE69601981 T DE 69601981T DE 69601981 T2 DE69601981 T2 DE 69601981T2
Authority
DE
Germany
Prior art keywords
junction
wafer
layer
silicon carbide
doping
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69601981T
Other languages
German (de)
English (en)
Other versions
DE69601981D1 (de
Inventor
Willy Hermansson
Lennart Ramberg
Dag Sigurd
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ABB Research Ltd Switzerland
Original Assignee
ABB Research Ltd Switzerland
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ABB Research Ltd Switzerland filed Critical ABB Research Ltd Switzerland
Publication of DE69601981D1 publication Critical patent/DE69601981D1/de
Application granted granted Critical
Publication of DE69601981T2 publication Critical patent/DE69601981T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/7602—Making of isolation regions between components between components manufactured in an active substrate comprising SiC compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/043—Manufacture or treatment of planar diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/051—Manufacture or treatment of Schottky diodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/931—Silicon carbide semiconductor

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thyristors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
DE69601981T 1995-01-18 1996-01-17 Herstellungsverfahren einer halbleiteranordnung aus siliziumkarbid Expired - Fee Related DE69601981T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
SE9500146A SE9500146D0 (sv) 1995-01-18 1995-01-18 Halvledarkomponent i kiselkarbid
PCT/SE1996/000034 WO1996022610A1 (en) 1995-01-18 1996-01-17 Semiconductor device in silicon carbide

Publications (2)

Publication Number Publication Date
DE69601981D1 DE69601981D1 (de) 1999-05-12
DE69601981T2 true DE69601981T2 (de) 1999-12-02

Family

ID=20396853

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69601981T Expired - Fee Related DE69601981T2 (de) 1995-01-18 1996-01-17 Herstellungsverfahren einer halbleiteranordnung aus siliziumkarbid

Country Status (6)

Country Link
US (1) US5914499A (enExample)
EP (1) EP0750789B1 (enExample)
JP (1) JP4143120B2 (enExample)
DE (1) DE69601981T2 (enExample)
SE (1) SE9500146D0 (enExample)
WO (1) WO1996022610A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112009000535B4 (de) * 2008-03-07 2013-08-01 Mitsubishi Electric Corp. Siliziumkarbid-Halbleitervorrichtung und Verfahren zu deren Herstellung

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SE512259C2 (sv) * 1998-03-23 2000-02-21 Abb Research Ltd Halvledaranordning bestående av dopad kiselkarbid vilken innefattar en pn-övergång som uppvisar åtminstone en ihålig defekt och förfarande för dess framställning
US6803243B2 (en) * 2001-03-15 2004-10-12 Cree, Inc. Low temperature formation of backside ohmic contacts for vertical devices
US6884644B1 (en) * 1998-09-16 2005-04-26 Cree, Inc. Low temperature formation of backside ohmic contacts for vertical devices
JP3955396B2 (ja) 1998-09-17 2007-08-08 株式会社ルネサステクノロジ 半導体サージ吸収素子
JP4320810B2 (ja) * 1998-11-30 2009-08-26 株式会社デンソー 炭化珪素半導体装置の製造方法
US6396080B2 (en) 1999-05-18 2002-05-28 Cree, Inc Semi-insulating silicon carbide without vanadium domination
US6218680B1 (en) 1999-05-18 2001-04-17 Cree, Inc. Semi-insulating silicon carbide without vanadium domination
US6373076B1 (en) * 1999-12-07 2002-04-16 Philips Electronics North America Corporation Passivated silicon carbide devices with low leakage current and method of fabricating
US6924215B2 (en) * 2002-05-29 2005-08-02 Taiwan Semiconductor Manufacturing Co., Ltd Method of monitoring high tilt angle of medium current implant
US7157730B2 (en) * 2002-12-20 2007-01-02 Finisar Corporation Angled wafer rotating ion implantation
CN1802755B (zh) 2003-05-09 2012-05-16 克里公司 通过离子注入进行隔离的led制造方法
US20050194584A1 (en) * 2003-11-12 2005-09-08 Slater David B.Jr. LED fabrication via ion implant isolation
US7592634B2 (en) * 2004-05-06 2009-09-22 Cree, Inc. LED fabrication via ion implant isolation
US7498651B2 (en) * 2004-11-24 2009-03-03 Microsemi Corporation Junction termination structures for wide-bandgap power devices
US7622358B2 (en) * 2005-09-30 2009-11-24 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device with semi-insulating substrate portions and method for forming the same
JP5044117B2 (ja) * 2005-12-14 2012-10-10 関西電力株式会社 炭化珪素バイポーラ型半導体装置
US8106487B2 (en) 2008-12-23 2012-01-31 Pratt & Whitney Rocketdyne, Inc. Semiconductor device having an inorganic coating layer applied over a junction termination extension
CN102570294B (zh) * 2012-01-12 2013-07-10 北京工业大学 一种真空解理大功率半导体激光器腔面氮钝化方法
JP6107430B2 (ja) * 2012-06-08 2017-04-05 豊田合成株式会社 半導体装置
WO2014172697A1 (en) * 2013-04-19 2014-10-23 Lightspin Technologies, Inc. Integrated avalanche photodiode arrays
WO2016178678A1 (en) 2015-05-06 2016-11-10 Lightspin Technologies, Inc. Integrated avalanche photodiode arrays
WO2016198388A1 (en) 2015-06-09 2016-12-15 Abb Schweiz Ag Method for manufacturing an edge termination for a silicon carbide power semiconductor device
DE102015115173A1 (de) * 2015-09-09 2017-03-09 Infineon Technologies Austria Ag Ein Halbleiterwafer, eine Implantationsvorrichtung zum Implantieren von Protonen und ein Verfahren zum Bilden eines Halbleiterbauelements
JP6557134B2 (ja) * 2015-12-24 2019-08-07 住重アテックス株式会社 半導体装置および半導体装置の製造方法
US10541300B2 (en) 2016-05-26 2020-01-21 General Electric Company Semiconductor device and method of making thereof
US10529884B2 (en) 2017-11-09 2020-01-07 LightSpin Technologies Inc. Virtual negative bevel and methods of isolating adjacent devices
US10608079B2 (en) 2018-02-06 2020-03-31 General Electric Company High energy ion implantation for junction isolation in silicon carbide devices
JP7312616B2 (ja) * 2019-06-14 2023-07-21 日産自動車株式会社 半導体装置及びその製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL131898C (enExample) * 1965-03-26
US3458779A (en) * 1967-11-24 1969-07-29 Gen Electric Sic p-n junction electroluminescent diode with a donor concentration diminishing from the junction to one surface and an acceptor concentration increasing in the same region
US5270244A (en) * 1993-01-25 1993-12-14 North Carolina State University At Raleigh Method for forming an oxide-filled trench in silicon carbide
US5449925A (en) * 1994-05-04 1995-09-12 North Carolina State University Voltage breakdown resistant monocrystalline silicon carbide semiconductor devices
US5399883A (en) * 1994-05-04 1995-03-21 North Carolina State University At Raleigh High voltage silicon carbide MESFETs and methods of fabricating same
WO1995032524A1 (en) * 1994-05-24 1995-11-30 Abb Research Ltd. Semiconductor device in silicon carbide with passivated surface
US5650654A (en) * 1994-12-30 1997-07-22 International Business Machines Corporation MOSFET device having controlled parasitic isolation threshold voltage

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112009000535B4 (de) * 2008-03-07 2013-08-01 Mitsubishi Electric Corp. Siliziumkarbid-Halbleitervorrichtung und Verfahren zu deren Herstellung

Also Published As

Publication number Publication date
EP0750789B1 (en) 1999-04-07
DE69601981D1 (de) 1999-05-12
EP0750789A1 (en) 1997-01-02
SE9500146D0 (sv) 1995-01-18
US5914499A (en) 1999-06-22
JP4143120B2 (ja) 2008-09-03
JPH09511103A (ja) 1997-11-04
WO1996022610A1 (en) 1996-07-25

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Legal Events

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8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee