NL131898C - - Google Patents

Info

Publication number
NL131898C
NL131898C NL131898DA NL131898C NL 131898 C NL131898 C NL 131898C NL 131898D A NL131898D A NL 131898DA NL 131898 C NL131898 C NL 131898C
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL131898C publication Critical patent/NL131898C/xx

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901Materials
    • H10P14/2902Materials being Group IVA materials
    • H10P14/2905Silicon, silicon germanium or germanium
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2924Structures
    • H10P14/2925Surface structures
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34Deposited materials, e.g. layers
    • H10P14/3402Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3408Silicon carbide
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01Manufacture or treatment
    • H10W10/011Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/019Manufacture or treatment of isolation regions comprising dielectric materials using epitaxial passivated integrated circuit [EPIC] processes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10Isolation regions comprising dielectric materials
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/05Etch and refill
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/085Isolated-integrated
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/148Silicon carbide
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/931Silicon carbide semiconductor
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/977Thinning or removal of substrate
NL131898D 1965-03-26 NL131898C (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US443046A US3397448A (en) 1965-03-26 1965-03-26 Semiconductor integrated circuits and method of making same

Publications (1)

Publication Number Publication Date
NL131898C true NL131898C (enExample)

Family

ID=23759211

Family Applications (2)

Application Number Title Priority Date Filing Date
NL131898D NL131898C (enExample) 1965-03-26
NL6603854A NL6603854A (enExample) 1965-03-26 1966-03-24

Family Applications After (1)

Application Number Title Priority Date Filing Date
NL6603854A NL6603854A (enExample) 1965-03-26 1966-03-24

Country Status (6)

Country Link
US (1) US3397448A (enExample)
CH (1) CH482303A (enExample)
DE (1) DE1539853A1 (enExample)
GB (1) GB1106197A (enExample)
NL (2) NL6603854A (enExample)
SE (1) SE303553B (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3451867A (en) * 1966-05-31 1969-06-24 Gen Electric Processes of epitaxial deposition or diffusion employing a silicon carbide masking layer
US3508980A (en) * 1967-07-26 1970-04-28 Motorola Inc Method of fabricating an integrated circuit structure with dielectric isolation
US3571919A (en) * 1968-09-25 1971-03-23 Texas Instruments Inc Semiconductor device fabrication
US3838441A (en) * 1968-12-04 1974-09-24 Texas Instruments Inc Semiconductor device isolation using silicon carbide
JPS5910073B2 (ja) * 1972-10-27 1984-03-06 株式会社日立製作所 シリコン・ゲ−トmos型半導体装置の製造方法
US4028149A (en) * 1976-06-30 1977-06-07 Ibm Corporation Process for forming monocrystalline silicon carbide on silicon substrates
JPS5893250A (ja) * 1981-11-30 1983-06-02 Toshiba Corp 半導体装置
JPS5978555A (ja) * 1982-10-27 1984-05-07 Toshiba Corp 半導体装置
US4524237A (en) * 1984-02-08 1985-06-18 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Increased voltage photovoltaic cell
US5229625A (en) * 1986-08-18 1993-07-20 Sharp Kabushiki Kaisha Schottky barrier gate type field effect transistor
SE9500146D0 (sv) * 1995-01-18 1995-01-18 Abb Research Ltd Halvledarkomponent i kiselkarbid
US6498381B2 (en) * 2001-02-22 2002-12-24 Tru-Si Technologies, Inc. Semiconductor structures having multiple conductive layers in an opening, and methods for fabricating same

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2840494A (en) * 1952-12-31 1958-06-24 Henry W Parker Manufacture of transistors
US2993814A (en) * 1958-05-24 1961-07-25 Foerderung Forschung Gmbh Heating conductor and method of making the same
US3300832A (en) * 1963-06-28 1967-01-31 Rca Corp Method of making composite insulatorsemiconductor wafer
US3290753A (en) * 1963-08-19 1966-12-13 Bell Telephone Labor Inc Method of making semiconductor integrated circuit elements
US3312879A (en) * 1964-07-29 1967-04-04 North American Aviation Inc Semiconductor structure including opposite conductivity segments

Also Published As

Publication number Publication date
SE303553B (enExample) 1968-09-02
CH482303A (de) 1969-11-30
DE1539853A1 (de) 1969-07-24
GB1106197A (en) 1968-03-13
US3397448A (en) 1968-08-20
NL6603854A (enExample) 1966-09-27

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