DE69601977T2 - Formen einer Siliziumstruktur in einem Hohlraum durch Anodisieren, Oxidieren und Ätzen - Google Patents
Formen einer Siliziumstruktur in einem Hohlraum durch Anodisieren, Oxidieren und ÄtzenInfo
- Publication number
- DE69601977T2 DE69601977T2 DE69601977T DE69601977T DE69601977T2 DE 69601977 T2 DE69601977 T2 DE 69601977T2 DE 69601977 T DE69601977 T DE 69601977T DE 69601977 T DE69601977 T DE 69601977T DE 69601977 T2 DE69601977 T2 DE 69601977T2
- Authority
- DE
- Germany
- Prior art keywords
- anodizing
- oxidizing
- etching
- cavity
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/0802—Details
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/18—Measuring force or stress, in general using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material
- G01L1/183—Measuring force or stress, in general using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material by measuring variations of frequency of vibrating piezo-resistive material
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0001—Transmitting or indicating the displacement of elastically deformable gauges by electric, electro-mechanical, magnetic or electro-magnetic means
- G01L9/0008—Transmitting or indicating the displacement of elastically deformable gauges by electric, electro-mechanical, magnetic or electro-magnetic means using vibrations
- G01L9/0019—Transmitting or indicating the displacement of elastically deformable gauges by electric, electro-mechanical, magnetic or electro-magnetic means using vibrations of a semiconductive element
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
- G01L9/0045—Diaphragm associated with a buried cavity
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Pressure Sensors (AREA)
- Measuring Fluid Pressure (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US48814695A | 1995-06-07 | 1995-06-07 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69601977D1 DE69601977D1 (de) | 1999-05-12 |
DE69601977T2 true DE69601977T2 (de) | 1999-12-02 |
Family
ID=23938500
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69601977T Expired - Fee Related DE69601977T2 (de) | 1995-06-07 | 1996-05-24 | Formen einer Siliziumstruktur in einem Hohlraum durch Anodisieren, Oxidieren und Ätzen |
Country Status (5)
Country | Link |
---|---|
US (2) | US6118164A (de) |
EP (1) | EP0747684B1 (de) |
JP (1) | JPH098330A (de) |
CA (1) | CA2176052A1 (de) |
DE (1) | DE69601977T2 (de) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102010029302B4 (de) | 2010-05-26 | 2021-08-19 | Robert Bosch Gmbh | Verfahren zur Herstellung einer Vielzahl von Dünnchips |
Families Citing this family (44)
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KR100210848B1 (ko) * | 1996-08-26 | 1999-07-15 | 구본준 | 실리콘 미세 기계의 제조방법 |
JP3301334B2 (ja) * | 1997-01-31 | 2002-07-15 | 三菱電機株式会社 | センサ素子及びその製造方法 |
DE19839606C1 (de) * | 1998-08-31 | 2000-04-27 | Siemens Ag | Mikromechanisches Bauelement und Verfahren zu dessen Herstellung |
US6309983B1 (en) * | 1999-06-03 | 2001-10-30 | Infineon Technologies Ag | Low temperature sacrificial oxide formation |
US6268635B1 (en) * | 1999-08-04 | 2001-07-31 | Jds Uniphase Inc. | Dielectric links for microelectromechanical systems |
US7427526B2 (en) * | 1999-12-20 | 2008-09-23 | The Penn State Research Foundation | Deposited thin films and their use in separation and sacrificial layer applications |
JP2004507880A (ja) * | 2000-04-17 | 2004-03-11 | ザ ペン ステイト リサーチ ファンデーション | 堆積された薄膜、並びに分離及び犠牲層への適用におけるその使用 |
US7008812B1 (en) * | 2000-05-30 | 2006-03-07 | Ic Mechanics, Inc. | Manufacture of MEMS structures in sealed cavity using dry-release MEMS device encapsulation |
US7153717B2 (en) * | 2000-05-30 | 2006-12-26 | Ic Mechanics Inc. | Encapsulation of MEMS devices using pillar-supported caps |
DE10032579B4 (de) * | 2000-07-05 | 2020-07-02 | Robert Bosch Gmbh | Verfahren zur Herstellung eines Halbleiterbauelements sowie ein nach dem Verfahren hergestelltes Halbleiterbauelement |
US6800988B1 (en) * | 2000-07-11 | 2004-10-05 | Technion Research & Development Foundation Ltd. | Voltage and light induced strains in porous crystalline materials and uses thereof |
DE10036724A1 (de) * | 2000-07-27 | 2002-02-14 | Infineon Technologies Ag | Verfahren zur Bildung eines Grabens in einem Halbleitersubstrat |
DE10054484A1 (de) | 2000-11-03 | 2002-05-08 | Bosch Gmbh Robert | Mikromechanisches Bauelement und entsprechendes Herstellungsverfahren |
DE10114036A1 (de) * | 2001-03-22 | 2002-10-02 | Bosch Gmbh Robert | Verfahren zur Herstellung von mikromechanischen Sensoren und damit hergestellte Sensoren |
US6734762B2 (en) * | 2001-04-09 | 2004-05-11 | Motorola, Inc. | MEMS resonators and method for manufacturing MEMS resonators |
US6800912B2 (en) * | 2001-05-18 | 2004-10-05 | Corporation For National Research Initiatives | Integrated electromechanical switch and tunable capacitor and method of making the same |
US6448103B1 (en) | 2001-05-30 | 2002-09-10 | Stmicroelectronics, Inc. | Method for making an accurate miniature semiconductor resonator |
US6878567B2 (en) * | 2001-06-29 | 2005-04-12 | Intel Corporation | Method and apparatus for fabrication of passivated microfluidic structures in semiconductor substrates |
US20040005258A1 (en) * | 2001-12-12 | 2004-01-08 | Fonash Stephen J. | Chemical reactor templates: sacrificial layer fabrication and template use |
AU2003205104A1 (en) * | 2002-01-11 | 2003-07-30 | The Pennsylvania State University | Method of forming a removable support with a sacrificial layers and of transferring devices |
US6707351B2 (en) * | 2002-03-27 | 2004-03-16 | Motorola, Inc. | Tunable MEMS resonator and method for tuning |
JP2004103613A (ja) * | 2002-09-04 | 2004-04-02 | Toshiba Corp | 半導体装置とその製造方法 |
JP2004228150A (ja) * | 2003-01-20 | 2004-08-12 | Canon Inc | エッチング方法 |
US7492019B2 (en) * | 2003-03-07 | 2009-02-17 | Ic Mechanics, Inc. | Micromachined assembly with a multi-layer cap defining a cavity |
US7094621B2 (en) * | 2003-03-05 | 2006-08-22 | Jbcr Innovations, L.L.P. | Fabrication of diaphragms and “floating” regions of single crystal semiconductor for MEMS devices |
DE60320391D1 (de) * | 2003-07-04 | 2008-05-29 | St Microelectronics Srl | Herstellungsverfahren für eine Halbleitervorrichtung mit einem hängenden Mikrosystem und entsprechende Vorrichtung |
US7145213B1 (en) | 2004-05-24 | 2006-12-05 | The United States Of America As Represented By The Secretary Of The Air Force | MEMS RF switch integrated process |
US7381583B1 (en) | 2004-05-24 | 2008-06-03 | The United States Of America As Represented By The Secretary Of The Air Force | MEMS RF switch integrated process |
US7231829B2 (en) * | 2005-03-31 | 2007-06-19 | Medtronic, Inc. | Monolithic integrated circuit/pressure sensor on pacing lead |
US9616223B2 (en) | 2005-12-30 | 2017-04-11 | Medtronic, Inc. | Media-exposed interconnects for transducers |
DE102006004209B3 (de) * | 2006-01-30 | 2007-09-06 | Infineon Technologies Ag | Mikromechanisches Bauelement und Verfahren zur Herstellung eines mikromechanischen Bauelements |
US7442599B2 (en) * | 2006-09-15 | 2008-10-28 | Sharp Laboratories Of America, Inc. | Silicon/germanium superlattice thermal sensor |
JP5492571B2 (ja) | 2007-02-20 | 2014-05-14 | クォルコム・メムズ・テクノロジーズ・インコーポレーテッド | Memsのエッチングを行うための機器および方法 |
CN101652317B (zh) | 2007-04-04 | 2012-12-12 | 高通Mems科技公司 | 通过牺牲层中的界面修改来消除释放蚀刻侵蚀 |
US7719752B2 (en) | 2007-05-11 | 2010-05-18 | Qualcomm Mems Technologies, Inc. | MEMS structures, methods of fabricating MEMS components on separate substrates and assembly of same |
JP2010534865A (ja) | 2007-07-25 | 2010-11-11 | クォルコム・メムズ・テクノロジーズ・インコーポレーテッド | Mems表示装置及び該mems表示装置の製造方法 |
US8023191B2 (en) | 2008-05-07 | 2011-09-20 | Qualcomm Mems Technologies, Inc. | Printable static interferometric images |
JP5427392B2 (ja) * | 2008-10-22 | 2014-02-26 | 株式会社デジアイズ | 荷重センサ、秤 |
US8353215B2 (en) * | 2009-07-13 | 2013-01-15 | Delatorre Leroy C | Torque output differential pressure sensor |
EP2365521B1 (de) * | 2010-01-22 | 2018-12-26 | IMEC vzw | Verkapselung auf Dünnfilm-Waferebene |
US9105751B2 (en) | 2011-11-11 | 2015-08-11 | International Business Machines Corporation | Integrated semiconductor devices with single crystalline beam, methods of manufacture and design structure |
US8546240B2 (en) | 2011-11-11 | 2013-10-01 | International Business Machines Corporation | Methods of manufacturing integrated semiconductor devices with single crystalline beam |
US8629036B2 (en) | 2011-11-11 | 2014-01-14 | International Business Machines Corporation | Integrated semiconductor devices with amorphous silicon beam, methods of manufacture and design structure |
US11352169B2 (en) | 2019-01-18 | 2022-06-07 | Rehrig Pacific Company | Pallet assembly |
Family Cites Families (41)
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---|---|---|---|---|
JPS4822673B1 (de) * | 1969-11-13 | 1973-07-07 | ||
US3909924A (en) * | 1974-03-27 | 1975-10-07 | Nat Semiconductor Corp | Method of fabrication of silicon pressure transducer sensor units |
GB1601547A (en) * | 1977-05-30 | 1981-10-28 | Yokogawa Electric Works Ltd | Force detector |
GB2121953B (en) * | 1982-06-10 | 1985-09-04 | Itt Ind Ltd | Improvements in transducers |
JPS60111129A (ja) * | 1983-11-21 | 1985-06-17 | Yokogawa Hokushin Electric Corp | 圧力センサ |
US4532700A (en) * | 1984-04-27 | 1985-08-06 | International Business Machines Corporation | Method of manufacturing semiconductor structures having an oxidized porous silicon isolation layer |
US4628591A (en) * | 1984-10-31 | 1986-12-16 | Texas Instruments Incorporated | Method for obtaining full oxide isolation of epitaxial islands in silicon utilizing selective oxidation of porous silicon |
US4665610A (en) * | 1985-04-22 | 1987-05-19 | Stanford University | Method of making a semiconductor transducer having multiple level diaphragm structure |
US4744863A (en) * | 1985-04-26 | 1988-05-17 | Wisconsin Alumni Research Foundation | Sealed cavity semiconductor pressure transducers and method of producing the same |
US4853669A (en) * | 1985-04-26 | 1989-08-01 | Wisconsin Alumni Research Foundation | Sealed cavity semiconductor pressure transducers and method of producing the same |
JPS6263828A (ja) * | 1985-09-06 | 1987-03-20 | Yokogawa Electric Corp | 振動式トランスジューサ |
US4766666A (en) * | 1985-09-30 | 1988-08-30 | Kabushiki Kaisha Toyota Chuo Kenkyusho | Semiconductor pressure sensor and method of manufacturing the same |
US4771638A (en) * | 1985-09-30 | 1988-09-20 | Kabushiki Kaisha Toyota Chuo Kenkyusho | Semiconductor pressure sensor |
GB8530809D0 (en) * | 1985-12-13 | 1986-01-22 | Gen Electric Co Plc | Sensor |
JPS6381867A (ja) * | 1986-09-25 | 1988-04-12 | Yokogawa Electric Corp | 半導体拡散ストレンゲ−ジ |
US4975390A (en) * | 1986-12-18 | 1990-12-04 | Nippondenso Co. Ltd. | Method of fabricating a semiconductor pressure sensor |
US4805456A (en) * | 1987-05-19 | 1989-02-21 | Massachusetts Institute Of Technology | Resonant accelerometer |
JPH0797643B2 (ja) * | 1987-07-08 | 1995-10-18 | 日産自動車株式会社 | 圧力変換装置の製造方法 |
JP2701845B2 (ja) * | 1987-08-21 | 1998-01-21 | 株式会社東海理化電機製作所 | シリコン薄膜の製造方法 |
US4800759A (en) * | 1987-08-31 | 1989-01-31 | Yokogawa Electric Corporation | Semiconductor pressure converter |
US4771639A (en) * | 1987-09-02 | 1988-09-20 | Yokogawa Electric Corporation | Semiconductor pressure sensor |
JPH01136378A (ja) * | 1987-11-24 | 1989-05-29 | Nissan Motor Co Ltd | 圧力変換装置の製造方法 |
US4897360A (en) * | 1987-12-09 | 1990-01-30 | Wisconsin Alumni Research Foundation | Polysilicon thin film process |
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US4784721A (en) * | 1988-02-22 | 1988-11-15 | Honeywell Inc. | Integrated thin-film diaphragm; backside etch |
JPH07104217B2 (ja) * | 1988-05-27 | 1995-11-13 | 横河電機株式会社 | 振動式トランスデューサとその製造方法 |
US5110373A (en) * | 1988-09-13 | 1992-05-05 | Nanostructures, Inc. | Silicon membrane with controlled stress |
US5009108A (en) * | 1988-09-16 | 1991-04-23 | Yokogawa Electric Corporation | Vibrating type transducer |
US4901570A (en) * | 1988-11-21 | 1990-02-20 | General Motors Corporation | Resonant-bridge two axis microaccelerometer |
US4893509A (en) * | 1988-12-27 | 1990-01-16 | General Motors Corporation | Method and product for fabricating a resonant-bridge microaccelerometer |
US5095401A (en) * | 1989-01-13 | 1992-03-10 | Kopin Corporation | SOI diaphragm sensor |
US4993143A (en) * | 1989-03-06 | 1991-02-19 | Delco Electronics Corporation | Method of making a semiconductive structure useful as a pressure sensor |
US4945769A (en) * | 1989-03-06 | 1990-08-07 | Delco Electronics Corporation | Semiconductive structure useful as a pressure sensor |
US4889590A (en) * | 1989-04-27 | 1989-12-26 | Motorola Inc. | Semiconductor pressure sensor means and method |
JP2811768B2 (ja) * | 1989-07-17 | 1998-10-15 | 株式会社デンソー | 半導体式加速度センサおよびその製造方法 |
US5090254A (en) * | 1990-04-11 | 1992-02-25 | Wisconsin Alumni Research Foundation | Polysilicon resonating beam transducers |
CN1018844B (zh) * | 1990-06-02 | 1992-10-28 | 中国科学院兰州化学物理研究所 | 防锈干膜润滑剂 |
CN1027011C (zh) * | 1990-07-12 | 1994-12-14 | 涂相征 | 一种硅梁压阻加速度传感器及其制造方法 |
JPH0590615A (ja) * | 1991-09-30 | 1993-04-09 | Yokogawa Electric Corp | 振動形トランスデユサの製造方法 |
US5332469A (en) * | 1992-11-12 | 1994-07-26 | Ford Motor Company | Capacitive surface micromachined differential pressure sensor |
US5427975A (en) * | 1993-05-10 | 1995-06-27 | Delco Electronics Corporation | Method of micromachining an integrated sensor on the surface of a silicon wafer |
-
1996
- 1996-05-08 CA CA002176052A patent/CA2176052A1/en not_active Abandoned
- 1996-05-24 DE DE69601977T patent/DE69601977T2/de not_active Expired - Fee Related
- 1996-05-24 EP EP96401128A patent/EP0747684B1/de not_active Expired - Lifetime
- 1996-06-04 JP JP8141794A patent/JPH098330A/ja active Pending
-
1997
- 1997-09-22 US US08/935,210 patent/US6118164A/en not_active Expired - Fee Related
- 1997-10-23 US US08/957,401 patent/US5834333A/en not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102010029302B4 (de) | 2010-05-26 | 2021-08-19 | Robert Bosch Gmbh | Verfahren zur Herstellung einer Vielzahl von Dünnchips |
Also Published As
Publication number | Publication date |
---|---|
JPH098330A (ja) | 1997-01-10 |
US5834333A (en) | 1998-11-10 |
CA2176052A1 (en) | 1996-12-08 |
EP0747684B1 (de) | 1999-04-07 |
DE69601977D1 (de) | 1999-05-12 |
US6118164A (en) | 2000-09-12 |
EP0747684A1 (de) | 1996-12-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |