DE69601977T2 - Formen einer Siliziumstruktur in einem Hohlraum durch Anodisieren, Oxidieren und Ätzen - Google Patents

Formen einer Siliziumstruktur in einem Hohlraum durch Anodisieren, Oxidieren und Ätzen

Info

Publication number
DE69601977T2
DE69601977T2 DE69601977T DE69601977T DE69601977T2 DE 69601977 T2 DE69601977 T2 DE 69601977T2 DE 69601977 T DE69601977 T DE 69601977T DE 69601977 T DE69601977 T DE 69601977T DE 69601977 T2 DE69601977 T2 DE 69601977T2
Authority
DE
Germany
Prior art keywords
anodizing
oxidizing
etching
cavity
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69601977T
Other languages
English (en)
Other versions
DE69601977D1 (de
Inventor
James D Deforest Seefeldt
Michael F Janesville Mattes
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SSI Technologies LLC
Original Assignee
SSI Technologies LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SSI Technologies LLC filed Critical SSI Technologies LLC
Application granted granted Critical
Publication of DE69601977D1 publication Critical patent/DE69601977D1/de
Publication of DE69601977T2 publication Critical patent/DE69601977T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0802—Details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/18—Measuring force or stress, in general using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material
    • G01L1/183—Measuring force or stress, in general using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material by measuring variations of frequency of vibrating piezo-resistive material
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0001—Transmitting or indicating the displacement of elastically deformable gauges by electric, electro-mechanical, magnetic or electro-magnetic means
    • G01L9/0008—Transmitting or indicating the displacement of elastically deformable gauges by electric, electro-mechanical, magnetic or electro-magnetic means using vibrations
    • G01L9/0019—Transmitting or indicating the displacement of elastically deformable gauges by electric, electro-mechanical, magnetic or electro-magnetic means using vibrations of a semiconductive element
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
    • G01L9/0045—Diaphragm associated with a buried cavity

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Pressure Sensors (AREA)
  • Measuring Fluid Pressure (AREA)
DE69601977T 1995-06-07 1996-05-24 Formen einer Siliziumstruktur in einem Hohlraum durch Anodisieren, Oxidieren und Ätzen Expired - Fee Related DE69601977T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US48814695A 1995-06-07 1995-06-07

Publications (2)

Publication Number Publication Date
DE69601977D1 DE69601977D1 (de) 1999-05-12
DE69601977T2 true DE69601977T2 (de) 1999-12-02

Family

ID=23938500

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69601977T Expired - Fee Related DE69601977T2 (de) 1995-06-07 1996-05-24 Formen einer Siliziumstruktur in einem Hohlraum durch Anodisieren, Oxidieren und Ätzen

Country Status (5)

Country Link
US (2) US6118164A (de)
EP (1) EP0747684B1 (de)
JP (1) JPH098330A (de)
CA (1) CA2176052A1 (de)
DE (1) DE69601977T2 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102010029302B4 (de) 2010-05-26 2021-08-19 Robert Bosch Gmbh Verfahren zur Herstellung einer Vielzahl von Dünnchips

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DE10032579B4 (de) * 2000-07-05 2020-07-02 Robert Bosch Gmbh Verfahren zur Herstellung eines Halbleiterbauelements sowie ein nach dem Verfahren hergestelltes Halbleiterbauelement
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DE10054484A1 (de) * 2000-11-03 2002-05-08 Bosch Gmbh Robert Mikromechanisches Bauelement und entsprechendes Herstellungsverfahren
DE10114036A1 (de) * 2001-03-22 2002-10-02 Bosch Gmbh Robert Verfahren zur Herstellung von mikromechanischen Sensoren und damit hergestellte Sensoren
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US7145213B1 (en) 2004-05-24 2006-12-05 The United States Of America As Represented By The Secretary Of The Air Force MEMS RF switch integrated process
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US9616223B2 (en) 2005-12-30 2017-04-11 Medtronic, Inc. Media-exposed interconnects for transducers
DE102006004209B3 (de) * 2006-01-30 2007-09-06 Infineon Technologies Ag Mikromechanisches Bauelement und Verfahren zur Herstellung eines mikromechanischen Bauelements
US7442599B2 (en) * 2006-09-15 2008-10-28 Sharp Laboratories Of America, Inc. Silicon/germanium superlattice thermal sensor
US8536059B2 (en) 2007-02-20 2013-09-17 Qualcomm Mems Technologies, Inc. Equipment and methods for etching of MEMS
EP2129619A2 (de) 2007-04-04 2009-12-09 Qualcomm Mems Technologies, Inc. Beseitigung von freisetzungsätzangriffen durch schnittstellenmodifikation in opferschichten
US7719752B2 (en) 2007-05-11 2010-05-18 Qualcomm Mems Technologies, Inc. MEMS structures, methods of fabricating MEMS components on separate substrates and assembly of same
JP2010534865A (ja) 2007-07-25 2010-11-11 クォルコム・メムズ・テクノロジーズ・インコーポレーテッド Ｍｅｍｓ表示装置及び該ｍｅｍｓ表示装置の製造方法
US8023191B2 (en) 2008-05-07 2011-09-20 Qualcomm Mems Technologies, Inc. Printable static interferometric images
JP5427392B2 (ja) * 2008-10-22 2014-02-26 株式会社デジアイズ 荷重センサ、秤
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EP2365521B1 (de) * 2010-01-22 2018-12-26 IMEC vzw Verkapselung auf Dünnfilm-Waferebene
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US8629036B2 (en) 2011-11-11 2014-01-14 International Business Machines Corporation Integrated semiconductor devices with amorphous silicon beam, methods of manufacture and design structure
US9105751B2 (en) 2011-11-11 2015-08-11 International Business Machines Corporation Integrated semiconductor devices with single crystalline beam, methods of manufacture and design structure
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Cited By (1)

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Publication number Priority date Publication date Assignee Title
DE102010029302B4 (de) 2010-05-26 2021-08-19 Robert Bosch Gmbh Verfahren zur Herstellung einer Vielzahl von Dünnchips

Also Published As

Publication number Publication date
CA2176052A1 (en) 1996-12-08
EP0747684B1 (de) 1999-04-07
EP0747684A1 (de) 1996-12-11
US5834333A (en) 1998-11-10
US6118164A (en) 2000-09-12
DE69601977D1 (de) 1999-05-12
JPH098330A (ja) 1997-01-10

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