DE69533103D1 - Verfahren und vorrichtung zur ausstattung einer geregelten ladungspumpe für sehr niedrige negative spannungen - Google Patents
Verfahren und vorrichtung zur ausstattung einer geregelten ladungspumpe für sehr niedrige negative spannungenInfo
- Publication number
- DE69533103D1 DE69533103D1 DE69533103T DE69533103T DE69533103D1 DE 69533103 D1 DE69533103 D1 DE 69533103D1 DE 69533103 T DE69533103 T DE 69533103T DE 69533103 T DE69533103 T DE 69533103T DE 69533103 D1 DE69533103 D1 DE 69533103D1
- Authority
- DE
- Germany
- Prior art keywords
- equiping
- charge pump
- negative voltages
- low negative
- regulated charge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
- H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
- G05F3/242—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/30—Power supply circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Read Only Memory (AREA)
- Dc-Dc Converters (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/217,095 US5532915A (en) | 1994-03-23 | 1994-03-23 | Method and apparatus for providing an ultra low power regulated negative charge pump |
US217095 | 1994-03-23 | ||
PCT/US1995/003318 WO1995026071A1 (en) | 1994-03-23 | 1995-03-16 | Method and apparatus for providing an ultra low power regulated negative charge pump |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69533103D1 true DE69533103D1 (de) | 2004-07-08 |
DE69533103T2 DE69533103T2 (de) | 2005-06-23 |
Family
ID=22809658
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69533103T Expired - Fee Related DE69533103T2 (de) | 1994-03-23 | 1995-03-16 | Verfahren und vorrichtung zur ausstattung einer geregelten ladungspumpe für sehr niedrige negative spannungen |
Country Status (8)
Country | Link |
---|---|
US (1) | US5532915A (de) |
EP (1) | EP0758499B1 (de) |
JP (1) | JP3688710B2 (de) |
KR (1) | KR100263275B1 (de) |
AU (1) | AU2227795A (de) |
CA (1) | CA2185333C (de) |
DE (1) | DE69533103T2 (de) |
WO (1) | WO1995026071A1 (de) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR0145758B1 (ko) * | 1994-08-24 | 1998-08-01 | 김주용 | 반도체 소자의 전압 조정 회로 |
KR0179852B1 (ko) * | 1995-10-25 | 1999-04-15 | 문정환 | 차지 펌프 회로 |
DE69515669T2 (de) * | 1995-10-31 | 2000-07-27 | Stmicroelectronics S.R.L., Agrate Brianza | Negative Ladungspumpenschaltung für elektrisch löschbare Halbleiterspeichervorrichtung |
US5760637A (en) * | 1995-12-11 | 1998-06-02 | Sipex Corporation | Programmable charge pump |
US6188590B1 (en) | 1996-12-18 | 2001-02-13 | Macronix International Co., Ltd. | Regulator system for charge pump circuits |
WO1998027477A1 (en) * | 1996-12-18 | 1998-06-25 | Macronix International Co., Ltd. | A regulator system for charge pump circuits |
US6023187A (en) * | 1997-12-23 | 2000-02-08 | Mitsubishi Semiconductor America, Inc. | Voltage pump for integrated circuit and operating method thereof |
US6094037A (en) * | 1998-06-18 | 2000-07-25 | International Business Machines Corporation | Feedback apparatus including ultra low valve current source |
KR100293455B1 (ko) * | 1998-08-31 | 2001-07-12 | 김영환 | 반도체메모리소자의전압공급장치 |
WO2000014747A1 (en) * | 1998-09-03 | 2000-03-16 | Macronix International Co., Ltd. | Regulated voltage supply circuit for inducing tunneling current in floating gate memory devices |
US6160440A (en) * | 1998-09-25 | 2000-12-12 | Intel Corporation | Scaleable charge pump for use with a low voltage power supply |
US6215708B1 (en) | 1998-09-30 | 2001-04-10 | Integrated Device Technology, Inc. | Charge pump for improving memory cell low VCC performance without increasing gate oxide thickness |
AU5884500A (en) | 1999-06-25 | 2001-01-31 | Board Of Trustees Of The University Of Illinois, The | Dynamically-switched power converter |
US6310789B1 (en) | 1999-06-25 | 2001-10-30 | The Procter & Gamble Company | Dynamically-controlled, intrinsically regulated charge pump power converter |
KR100300077B1 (ko) * | 1999-07-28 | 2001-11-01 | 김영환 | 가변 오실레이션 주기를 갖는 차지펌프회로 |
US6359947B1 (en) * | 1999-08-31 | 2002-03-19 | Intel Corporation | Split clock buffers for a negative charge pump |
US6370046B1 (en) | 2000-08-31 | 2002-04-09 | The Board Of Trustees Of The University Of Illinois | Ultra-capacitor based dynamically regulated charge pump power converter |
US6628108B1 (en) * | 2000-12-22 | 2003-09-30 | Intel Corporation | Method and apparatus to provide a low voltage reference generation |
KR100638461B1 (ko) * | 2004-12-30 | 2006-10-24 | 매그나칩 반도체 유한회사 | 플래시 메모리에서의 전하 펌핑 장치 및 방법 |
JP4901252B2 (ja) * | 2006-03-20 | 2012-03-21 | ローム株式会社 | 負昇圧チャージポンプ回路、lcdドライバic、液晶表示装置 |
EP2302635B1 (de) * | 2009-09-18 | 2016-01-13 | STMicroelectronics Srl | Verfahren zum Vormagnetisieren einer nichtflüchtigen EEPROM-Speicheranordnung und entsprechende nichtflüchtige EEPROM-Speicheranordnung |
US9002447B2 (en) | 2013-03-14 | 2015-04-07 | Medtronic, Inc. | Implantable medical device having power supply for generating a regulated power supply |
CN107481759B (zh) * | 2016-06-08 | 2020-06-09 | 中芯国际集成电路制造(上海)有限公司 | 一种外部双电压输入选择开关电路及电子装置 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4638464A (en) * | 1983-11-14 | 1987-01-20 | International Business Machines Corp. | Charge pump system for non-volatile ram |
IT1225608B (it) * | 1988-07-06 | 1990-11-22 | Sgs Thomson Microelectronics | Regolazione della tensione prodotta da un moltiplicatore di tensione. |
KR920006991A (ko) * | 1990-09-25 | 1992-04-28 | 김광호 | 반도체메모리 장치의 고전압발생회로 |
US5168174A (en) * | 1991-07-12 | 1992-12-01 | Texas Instruments Incorporated | Negative-voltage charge pump with feedback control |
US5392205A (en) * | 1991-11-07 | 1995-02-21 | Motorola, Inc. | Regulated charge pump and method therefor |
US5397928A (en) * | 1992-01-17 | 1995-03-14 | Sipex Corporation | Voltage tripler using a charge pump having a single multiplexed charge transfer capacitor |
US5216588A (en) * | 1992-02-14 | 1993-06-01 | Catalyst Semiconductor, Inc. | Charge pump with high output current |
US5337284A (en) * | 1993-01-11 | 1994-08-09 | United Memories, Inc. | High voltage generator having a self-timed clock circuit and charge pump, and a method therefor |
US5355356A (en) * | 1993-05-19 | 1994-10-11 | Maxoptix Corporation | Charge pump for restoring DC in an optical recording read channel |
US5410465A (en) * | 1993-06-11 | 1995-04-25 | Tan; Charles M. C. | Integrated circuit charge pump voltage level converter |
US5422586A (en) * | 1993-09-10 | 1995-06-06 | Intel Corporation | Apparatus for a two phase bootstrap charge pump |
US5414669A (en) * | 1993-09-10 | 1995-05-09 | Intel Corporation | Method and apparatus for programming and erasing flash EEPROM memory arrays utilizing a charge pump circuit |
US5394027A (en) * | 1993-11-01 | 1995-02-28 | Motorola, Inc. | High voltage charge pump and related circuitry |
US5422600A (en) * | 1994-06-23 | 1995-06-06 | Motorola, Inc. | Amplifier input stage with charge pump supplying a differential transistor pair |
-
1994
- 1994-03-23 US US08/217,095 patent/US5532915A/en not_active Expired - Lifetime
-
1995
- 1995-03-16 DE DE69533103T patent/DE69533103T2/de not_active Expired - Fee Related
- 1995-03-16 JP JP52471895A patent/JP3688710B2/ja not_active Expired - Fee Related
- 1995-03-16 KR KR1019960705254A patent/KR100263275B1/ko not_active IP Right Cessation
- 1995-03-16 EP EP95915380A patent/EP0758499B1/de not_active Expired - Lifetime
- 1995-03-16 CA CA002185333A patent/CA2185333C/en not_active Expired - Fee Related
- 1995-03-16 WO PCT/US1995/003318 patent/WO1995026071A1/en active IP Right Grant
- 1995-03-16 AU AU22277/95A patent/AU2227795A/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
CA2185333A1 (en) | 1995-09-28 |
WO1995026071A1 (en) | 1995-09-28 |
JPH09510860A (ja) | 1997-10-28 |
US5532915A (en) | 1996-07-02 |
KR100263275B1 (ko) | 2000-08-01 |
EP0758499B1 (de) | 2004-06-02 |
DE69533103T2 (de) | 2005-06-23 |
EP0758499A4 (de) | 1997-06-04 |
JP3688710B2 (ja) | 2005-08-31 |
AU2227795A (en) | 1995-10-09 |
EP0758499A1 (de) | 1997-02-19 |
CA2185333C (en) | 2004-06-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |