DE69531528D1 - Halbleiteranordnung mit Isolation zwischen Komponenten, hergestellt in einer Diamantschicht mit Wasserstoff-Terminierung - Google Patents

Halbleiteranordnung mit Isolation zwischen Komponenten, hergestellt in einer Diamantschicht mit Wasserstoff-Terminierung

Info

Publication number
DE69531528D1
DE69531528D1 DE69531528T DE69531528T DE69531528D1 DE 69531528 D1 DE69531528 D1 DE 69531528D1 DE 69531528 T DE69531528 T DE 69531528T DE 69531528 T DE69531528 T DE 69531528T DE 69531528 D1 DE69531528 D1 DE 69531528D1
Authority
DE
Germany
Prior art keywords
insulation
components
semiconductor device
diamond layer
hydrogen termination
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69531528T
Other languages
English (en)
Other versions
DE69531528T2 (de
Inventor
Satoshi Yamashita
Hiroshi Kawarada
Masahiro Itoh
Naofumi Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Gas Co Ltd
Original Assignee
Tokyo Gas Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Gas Co Ltd filed Critical Tokyo Gas Co Ltd
Application granted granted Critical
Publication of DE69531528D1 publication Critical patent/DE69531528D1/de
Publication of DE69531528T2 publication Critical patent/DE69531528T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1602—Diamond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66015—Multistep manufacturing processes of devices having a semiconductor body comprising semiconducting carbon, e.g. diamond, diamond-like carbon, graphene
    • H01L29/66037—Multistep manufacturing processes of devices having a semiconductor body comprising semiconducting carbon, e.g. diamond, diamond-like carbon, graphene the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66045—Field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Element Separation (AREA)
DE69531528T 1994-09-16 1995-09-12 Halbleiteranordnung mit Isolation zwischen Komponenten, hergestellt in einer Diamantschicht mit Wasserstoff-Terminierung Expired - Fee Related DE69531528T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP22127694 1994-09-16
JP22127694 1994-09-16
JP6403595 1995-03-23
JP06403595A JP3308755B2 (ja) 1994-09-16 1995-03-23 素子分離された水素終端ダイヤモンド半導体素子の製造方法

Publications (2)

Publication Number Publication Date
DE69531528D1 true DE69531528D1 (de) 2003-09-25
DE69531528T2 DE69531528T2 (de) 2004-06-17

Family

ID=26405167

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69531528T Expired - Fee Related DE69531528T2 (de) 1994-09-16 1995-09-12 Halbleiteranordnung mit Isolation zwischen Komponenten, hergestellt in einer Diamantschicht mit Wasserstoff-Terminierung

Country Status (4)

Country Link
US (1) US5786604A (de)
EP (1) EP0702403B1 (de)
JP (1) JP3308755B2 (de)
DE (1) DE69531528T2 (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3364119B2 (ja) * 1996-09-02 2003-01-08 東京瓦斯株式会社 水素終端ダイヤモンドｍｉｓｆｅｔおよびその製造方法
JP3745844B2 (ja) * 1996-10-14 2006-02-15 浜松ホトニクス株式会社 電子管
JP3313696B2 (ja) * 2000-03-27 2002-08-12 科学技術振興事業団 電界効果トランジスタ
JP2002118257A (ja) * 2000-10-06 2002-04-19 Kobe Steel Ltd ダイヤモンド半導体装置
JP2006010359A (ja) * 2004-06-22 2006-01-12 Keio Gijuku ダイヤモンド電極の終端化方法
US20070234761A1 (en) * 2006-04-11 2007-10-11 Basf Corporation Electrocoat manufacturing process
GB2452873B (en) * 2006-05-10 2011-12-28 Nat Inst Of Advanced Ind Scien Method for diamond surface treatment and device using thin fi lm of diamond
US8197650B2 (en) 2007-06-07 2012-06-12 Sensor Innovations, Inc. Silicon electrochemical sensors
EP2169709B1 (de) 2007-07-04 2017-12-20 National Institute for Materials Science Diamanthalbleiterbauelement
DE102007039706A1 (de) * 2007-08-22 2009-02-26 Erhard Prof. Dr.-Ing. Kohn Chemischer Sensor auf Diamantschichten
CZ301547B6 (cs) * 2008-08-29 2010-04-14 Fyzikální ústav AV CR, v.v.i. Zpusob dopování diamantu prenosem náboje z organických barviv
JP5095562B2 (ja) * 2008-09-05 2012-12-12 日本電信電話株式会社 ダイヤモンド電界効果トランジスタ及びその作製方法
JP5483168B2 (ja) * 2009-07-24 2014-05-07 日本電信電話株式会社 ダイヤモンド薄膜およびダイヤモンド電界効果トランジスター
GB2500550A (en) 2010-12-16 2013-09-25 Sensor Innovations Inc Electrochemical sensors
FR2984595B1 (fr) * 2011-12-20 2014-02-14 Centre Nat Rech Scient Procede de fabrication d'un empilement mos sur un substrat en diamant
JP5759398B2 (ja) * 2012-02-21 2015-08-05 日本電信電話株式会社 ダイヤモンド電界効果トランジスタ及びその作成方法
CN102903756A (zh) * 2012-09-07 2013-01-30 中国电子科技集团公司第五十五研究所 金刚石金属-绝缘体-半导体结构场效应晶体管及制备法
CN107104141B (zh) * 2017-05-11 2020-06-19 西安交通大学 金刚石基背栅型氢终端场效应晶体管及其制备方法
JP7195539B2 (ja) * 2019-03-26 2022-12-26 国立研究開発法人物質・材料研究機構 半導体装置、パワーデバイスおよび制御用電子装置
CN112133752B (zh) * 2020-08-27 2021-11-19 西安电子科技大学 一种复合终端表面金刚石高压场效应晶体管及其制作方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4945629A (de) 1972-09-01 1974-05-01
US4605566A (en) * 1983-08-22 1986-08-12 Nec Corporation Method for forming thin films by absorption
US5278430A (en) * 1989-11-18 1994-01-11 Kabushiki Kaisha Toshiba Complementary semiconductor device using diamond thin film and the method of manufacturing this device
JP2913765B2 (ja) * 1990-05-21 1999-06-28 住友電気工業株式会社 シヨツトキー接合の形成法
JPH05229896A (ja) * 1992-02-20 1993-09-07 Matsushita Electric Ind Co Ltd 導電性ダイヤモンドの製造方法
JPH0799318A (ja) * 1993-09-28 1995-04-11 Kobe Steel Ltd ダイヤモンド薄膜電界効果トランジスタ及びその製造方法

Also Published As

Publication number Publication date
DE69531528T2 (de) 2004-06-17
EP0702403A2 (de) 1996-03-20
EP0702403A3 (de) 1997-10-15
US5786604A (en) 1998-07-28
JP3308755B2 (ja) 2002-07-29
EP0702403B1 (de) 2003-08-20
JPH08139109A (ja) 1996-05-31

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee