DE69528420T2 - Verfahren zur Herstellung einer halbleitenden Anordnung mit einer Voroxidationstufe - Google Patents

Verfahren zur Herstellung einer halbleitenden Anordnung mit einer Voroxidationstufe

Info

Publication number
DE69528420T2
DE69528420T2 DE69528420T DE69528420T DE69528420T2 DE 69528420 T2 DE69528420 T2 DE 69528420T2 DE 69528420 T DE69528420 T DE 69528420T DE 69528420 T DE69528420 T DE 69528420T DE 69528420 T2 DE69528420 T2 DE 69528420T2
Authority
DE
Germany
Prior art keywords
producing
oxidation stage
semiconducting device
semiconducting
oxidation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69528420T
Other languages
English (en)
Other versions
DE69528420D1 (de
Inventor
Yoshihiro Ueno
Tsutomu Amai
Shuichi Yokohama-Shi Samata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE69528420D1 publication Critical patent/DE69528420D1/de
Application granted granted Critical
Publication of DE69528420T2 publication Critical patent/DE69528420T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H01L21/28211—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation in a gaseous ambient using an oxygen or a water vapour, e.g. RTO, possibly through a layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/3165—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
    • H01L21/31654—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself
    • H01L21/31658—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself by thermal oxidation, e.g. of SiGe
    • H01L21/31662—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself by thermal oxidation, e.g. of SiGe of silicon in uncombined form
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/974—Substrate surface preparation

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
DE69528420T 1994-07-07 1995-07-07 Verfahren zur Herstellung einer halbleitenden Anordnung mit einer Voroxidationstufe Expired - Fee Related DE69528420T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15621094A JP3417665B2 (ja) 1994-07-07 1994-07-07 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
DE69528420D1 DE69528420D1 (de) 2002-11-07
DE69528420T2 true DE69528420T2 (de) 2003-06-26

Family

ID=15622775

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69528420T Expired - Fee Related DE69528420T2 (de) 1994-07-07 1995-07-07 Verfahren zur Herstellung einer halbleitenden Anordnung mit einer Voroxidationstufe

Country Status (5)

Country Link
US (1) US5731247A (de)
EP (1) EP0692819B1 (de)
JP (1) JP3417665B2 (de)
KR (1) KR0159464B1 (de)
DE (1) DE69528420T2 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6114258A (en) * 1998-10-19 2000-09-05 Applied Materials, Inc. Method of oxidizing a substrate in the presence of nitride and oxynitride films
US7662702B2 (en) * 2004-06-07 2010-02-16 Imec Method for manufacturing a crystalline silicon layer
JP5272496B2 (ja) * 2008-04-25 2013-08-28 信越半導体株式会社 シリコンウェーハの酸化膜形成方法
KR20160001114A (ko) 2014-06-26 2016-01-06 에스케이하이닉스 주식회사 반도체 장치 제조 방법
KR102215740B1 (ko) * 2019-05-14 2021-02-16 연세대학교 산학협력단 게르마늄-게르마늄 산화막의 제조방법, 이에 의해 제조된 게르마늄-게르마늄 산화막 및 상기 게르마늄-게르마늄 산화막을 포함하는 mos 커패시터
KR20190117435A (ko) 2019-09-28 2019-10-16 이혜진 화장을 지워주는 기구
RU2770165C1 (ru) * 2021-08-26 2022-04-14 Акционерное общество "Научно-исследовательский институт физических измерений" Способ изготовления упругих элементов из монокристаллического кремния

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4409260A (en) * 1979-08-15 1983-10-11 Hughes Aircraft Company Process for low-temperature surface layer oxidation of a semiconductor substrate
US4920076A (en) * 1988-04-15 1990-04-24 The United States Of America As Represented By The United States Department Of Energy Method for enhancing growth of SiO2 in Si by the implantation of germanium
EP0375232B1 (de) * 1988-12-21 1996-03-06 AT&T Corp. Thermisches Oxydierungsverfahren mit verändertem Wachstum für dünne Oxide
KR920010774A (ko) * 1990-11-16 1992-06-27 아이자와 스스무 반도체장치의 제조방법
US5312766A (en) * 1991-03-06 1994-05-17 National Semiconductor Corporation Method of providing lower contact resistance in MOS transistors
JP3189056B2 (ja) * 1991-09-05 2001-07-16 富士通株式会社 半導体基板の前処理方法とその機能を具備する装置
JPH05217921A (ja) * 1991-09-13 1993-08-27 Motorola Inc 材料膜のエピタキシアル成長を行うための温度制御された処理
US5288662A (en) * 1992-06-15 1994-02-22 Air Products And Chemicals, Inc. Low ozone depleting organic chlorides for use during silicon oxidation and furnace tube cleaning
US5316981A (en) * 1992-10-09 1994-05-31 Advanced Micro Devices, Inc. Method for achieving a high quality thin oxide using a sacrificial oxide anneal
US5489550A (en) * 1994-08-09 1996-02-06 Texas Instruments Incorporated Gas-phase doping method using germanium-containing additive

Also Published As

Publication number Publication date
EP0692819B1 (de) 2002-10-02
US5731247A (en) 1998-03-24
DE69528420D1 (de) 2002-11-07
KR960005852A (ko) 1996-02-23
JPH0822991A (ja) 1996-01-23
KR0159464B1 (ko) 1999-02-01
EP0692819A2 (de) 1996-01-17
EP0692819A3 (de) 1997-07-02
JP3417665B2 (ja) 2003-06-16

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee