DE69523525D1 - Kompakte integrierte Kondensator-Widerstand/Induktor-Struktur - Google Patents

Kompakte integrierte Kondensator-Widerstand/Induktor-Struktur

Info

Publication number
DE69523525D1
DE69523525D1 DE69523525T DE69523525T DE69523525D1 DE 69523525 D1 DE69523525 D1 DE 69523525D1 DE 69523525 T DE69523525 T DE 69523525T DE 69523525 T DE69523525 T DE 69523525T DE 69523525 D1 DE69523525 D1 DE 69523525D1
Authority
DE
Germany
Prior art keywords
resistor
inductor structure
integrated capacitor
compact integrated
compact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69523525T
Other languages
English (en)
Inventor
Richard Frederick Keil
Ram Kelkar
Illya Iosifovich Novof
Jeffery Howard Oppold
Kenneth Dean Short
Stephen Dale Wyatt
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE69523525D1 publication Critical patent/DE69523525D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
DE69523525T 1994-08-31 1995-08-08 Kompakte integrierte Kondensator-Widerstand/Induktor-Struktur Expired - Lifetime DE69523525D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/298,685 US5541442A (en) 1994-08-31 1994-08-31 Integrated compact capacitor-resistor/inductor configuration

Publications (1)

Publication Number Publication Date
DE69523525D1 true DE69523525D1 (de) 2001-12-06

Family

ID=23151590

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69523525T Expired - Lifetime DE69523525D1 (de) 1994-08-31 1995-08-08 Kompakte integrierte Kondensator-Widerstand/Induktor-Struktur

Country Status (4)

Country Link
US (1) US5541442A (de)
EP (1) EP0700091B1 (de)
JP (1) JPH08107186A (de)
DE (1) DE69523525D1 (de)

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US6387753B1 (en) 1997-12-30 2002-05-14 Texas Instruments Incorporated Low loss capacitor structure
US6531397B1 (en) 1998-01-09 2003-03-11 Lsi Logic Corporation Method and apparatus for using across wafer back pressure differentials to influence the performance of chemical mechanical polishing
US6534842B2 (en) * 1998-03-03 2003-03-18 Matsushita Electric Industrial Co., Ltd. Composite components and the method of manufacturing the same
DE19810825A1 (de) * 1998-03-12 1999-09-16 Siemens Ag Integrierte elektronische Schaltungsanordnung und Verfahren zu ihrer Herstellung
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US6921962B1 (en) * 1998-12-18 2005-07-26 Texas Instruments Incorporated Integrated circuit having a thin film resistor located within a multilevel dielectric between an upper and lower metal interconnect layer
JP3177971B2 (ja) * 1999-01-25 2001-06-18 日本電気株式会社 抵抗素子を有する半導体装置
US6037649A (en) * 1999-04-01 2000-03-14 Winbond Electronics Corp. Three-dimension inductor structure in integrated circuit technology
US6208009B1 (en) 1999-04-30 2001-03-27 Digital Devices, Inc. RC-networks in semiconductor devices and method therefor
JP2002124639A (ja) * 2000-08-09 2002-04-26 Seiko Instruments Inc 半導体装置及びその製造方法
US6798257B1 (en) 2001-03-21 2004-09-28 Cisco Technology, Inc. Method and apparatus for providing multiple clock signals on a chip using a second PLL library circuit connected to a buffered reference clock output of a first PLL library circuit
US7498196B2 (en) 2001-03-30 2009-03-03 Megica Corporation Structure and manufacturing method of chip scale package
KR100382765B1 (ko) * 2001-06-15 2003-05-09 삼성전자주식회사 송수신용 수동소자와 그 집적모듈 및 그 제조방법
US6667536B2 (en) 2001-06-28 2003-12-23 Agere Systems Inc. Thin film multi-layer high Q transformer formed in a semiconductor substrate
US6639298B2 (en) 2001-06-28 2003-10-28 Agere Systems Inc. Multi-layer inductor formed in a semiconductor substrate
US6673698B1 (en) 2002-01-19 2004-01-06 Megic Corporation Thin film semiconductor package utilizing a glass substrate with composite polymer/metal interconnect layers
TW584950B (en) 2001-12-31 2004-04-21 Megic Corp Chip packaging structure and process thereof
TW503496B (en) 2001-12-31 2002-09-21 Megic Corp Chip packaging structure and manufacturing process of the same
TW544882B (en) 2001-12-31 2003-08-01 Megic Corp Chip package structure and process thereof
WO2004102665A1 (en) * 2003-05-14 2004-11-25 Ericsson Technology Licensing Ab High-density circuits that include inductors
US7169661B2 (en) * 2004-04-12 2007-01-30 System General Corp. Process of fabricating high resistance CMOS resistor
JP2006186034A (ja) * 2004-12-27 2006-07-13 Toshiba Corp 半導体装置
DE102005050484B4 (de) * 2005-10-21 2010-01-28 Atmel Automotive Gmbh Monolithisch integrierbare Schaltungsanordnung
US8234773B2 (en) * 2006-06-05 2012-08-07 The United States Of America As Represented By The Secretary Of The Army Apparatus and method for forming electronic devices
US8188535B2 (en) * 2008-05-16 2012-05-29 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile semiconductor memory device and manufacturing method thereof
US8581317B2 (en) * 2008-08-27 2013-11-12 Texas Instruments Incorporated SOI MuGFETs having single gate electrode level
ITMI20130060A1 (it) * 2013-01-17 2014-07-18 St Microelectronics Srl Dispositivo a semiconduttore a struttura impilata.
US9449762B2 (en) 2014-05-07 2016-09-20 Qualcomm Incorporated Embedded package substrate capacitor with configurable/controllable equivalent series resistance
US9800134B2 (en) * 2015-02-25 2017-10-24 Rockwell Automation Technologies, Inc. Motor drive with LCL filter inductor with built-in passive damping resistor for AFE rectifier
US9847293B1 (en) * 2016-08-18 2017-12-19 Qualcomm Incorporated Utilization of backside silicidation to form dual side contacted capacitor
EP3432360A1 (de) 2017-07-17 2019-01-23 Murata Manufacturing Co., Ltd. Verteilter rc-abschluss
US10439565B2 (en) * 2017-09-27 2019-10-08 Qualcomm Incorporated Low parasitic capacitance low noise amplifier
US10972068B2 (en) * 2018-06-29 2021-04-06 Qualcomm Incorporated Process-invariant delay cell

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US4251326A (en) * 1978-12-28 1981-02-17 Western Electric Company, Inc. Fabricating an RC network utilizing alpha tantalum
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US4419812A (en) * 1982-08-23 1983-12-13 Ncr Corporation Method of fabricating an integrated circuit voltage multiplier containing a parallel plate capacitor
US4458295A (en) * 1982-11-09 1984-07-03 Raytheon Company Lumped passive components and method of manufacture
GB2136235B (en) * 1983-02-22 1986-07-09 Philips Electronic Associated Rc active filter device
JPS61194868A (ja) * 1985-02-25 1986-08-29 Hitachi Ltd 半導体集積回路装置
US4853759A (en) * 1986-09-29 1989-08-01 American Microsystems, Inc. Integrated circuit filter with reduced die area
US4910516A (en) * 1987-03-25 1990-03-20 Texas Instruments Incorporated Integrated dual-slope analog to digital converter with R/C variance compensation
DE3714672A1 (de) * 1987-05-02 1988-11-17 Telefunken Electronic Gmbh Rc-leitung
JPH01278771A (ja) * 1988-05-02 1989-11-09 Nec Corp 半導体集積回路の入力保護装置
US4969032A (en) * 1988-07-18 1990-11-06 Motorola Inc. Monolithic microwave integrated circuit having vertically stacked components
SE466078B (sv) * 1990-04-20 1991-12-09 Ericsson Telefon Ab L M Anordning vid en skaerm hos en integrerad krets och foerfarande foer framstaellning av anordningen
CA2023172A1 (en) * 1990-08-13 1992-02-14 Francois L. Cordeau Method to manufacture double-poly capacitors
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US5254493A (en) * 1990-10-30 1993-10-19 Microelectronics And Computer Technology Corporation Method of fabricating integrated resistors in high density substrates
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Also Published As

Publication number Publication date
US5541442A (en) 1996-07-30
EP0700091A2 (de) 1996-03-06
EP0700091B1 (de) 2001-10-31
JPH08107186A (ja) 1996-04-23
EP0700091A3 (de) 1997-05-21

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Legal Events

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