DE69523424T2 - Verfahren und Gerät zur Messung der Substrattemperatur - Google Patents

Verfahren und Gerät zur Messung der Substrattemperatur

Info

Publication number
DE69523424T2
DE69523424T2 DE69523424T DE69523424T DE69523424T2 DE 69523424 T2 DE69523424 T2 DE 69523424T2 DE 69523424 T DE69523424 T DE 69523424T DE 69523424 T DE69523424 T DE 69523424T DE 69523424 T2 DE69523424 T2 DE 69523424T2
Authority
DE
Germany
Prior art keywords
probe
temperature
substrate
reading
measuring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69523424T
Other languages
English (en)
Other versions
DE69523424D1 (de
Inventor
Bruce W Peuse
Gary E Miner
Mark Yam
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=23413238&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE69523424(T2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of DE69523424D1 publication Critical patent/DE69523424D1/de
Application granted granted Critical
Publication of DE69523424T2 publication Critical patent/DE69523424T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/0003—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiant heat transfer of samples, e.g. emittance meter
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/04—Casings
    • G01J5/041—Mountings in enclosures or in a particular environment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/904—Specified use of nanostructure for medical, immunological, body treatment, or diagnosis
    • Y10S977/918—Immunological
DE69523424T 1994-12-19 1995-12-15 Verfahren und Gerät zur Messung der Substrattemperatur Expired - Lifetime DE69523424T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/359,302 US5660472A (en) 1994-12-19 1994-12-19 Method and apparatus for measuring substrate temperatures

Publications (2)

Publication Number Publication Date
DE69523424D1 DE69523424D1 (de) 2001-11-29
DE69523424T2 true DE69523424T2 (de) 2002-06-27

Family

ID=23413238

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69523424T Expired - Lifetime DE69523424T2 (de) 1994-12-19 1995-12-15 Verfahren und Gerät zur Messung der Substrattemperatur

Country Status (6)

Country Link
US (2) US5660472A (de)
EP (1) EP0718610B1 (de)
JP (3) JP2711239B2 (de)
KR (1) KR100342796B1 (de)
AT (1) ATE207611T1 (de)
DE (1) DE69523424T2 (de)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008026002A1 (de) * 2008-05-29 2009-12-17 Von Ardenne Anlagentechnik Gmbh Verfahren zur Temperaturmessung an Substraten und Vakuumbeschichtungsanlage
DE102012005428A1 (de) * 2012-03-16 2013-09-19 Centrotherm Thermal Solutions Gmbh & Co. Kg Vorrichtung zum Bestimmen der Temperatur eines Substrats

Families Citing this family (138)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5755511A (en) * 1994-12-19 1998-05-26 Applied Materials, Inc. Method and apparatus for measuring substrate temperatures
US6179466B1 (en) * 1994-12-19 2001-01-30 Applied Materials, Inc. Method and apparatus for measuring substrate temperatures
US5830277A (en) * 1995-05-26 1998-11-03 Mattson Technology, Inc. Thermal processing system with supplemental resistive heater and shielded optical pyrometry
US6004029A (en) * 1995-07-10 1999-12-21 Cvc Products, Inc. Method for automated calibration of temperature sensors in rapid thermal processing equipment
US5762419A (en) * 1995-07-26 1998-06-09 Applied Materials, Inc. Method and apparatus for infrared pyrometer calibration in a thermal processing system
US5881208A (en) * 1995-12-20 1999-03-09 Sematech, Inc. Heater and temperature sensor array for rapid thermal processing thermal core
WO1997028669A1 (en) 1996-01-31 1997-08-07 Asm America, Inc. Model-based predictive control of thermal processing
US6179465B1 (en) * 1996-03-28 2001-01-30 Applied Materials, Inc. Method and apparatus for infrared pyrometer calibration in a thermal processing system using multiple light sources
US5943550A (en) * 1996-03-29 1999-08-24 Advanced Micro Devices, Inc. Method of processing a semiconductor wafer for controlling drive current
US5938335A (en) 1996-04-08 1999-08-17 Applied Materials, Inc. Self-calibrating temperature probe
US6046439A (en) * 1996-06-17 2000-04-04 Mattson Technology, Inc. System and method for thermal processing of a semiconductor substrate
US5884412A (en) * 1996-07-24 1999-03-23 Applied Materials, Inc. Method and apparatus for purging the back side of a substrate during chemical vapor processing
US6090210A (en) * 1996-07-24 2000-07-18 Applied Materials, Inc. Multi-zone gas flow control in a process chamber
US5960555A (en) * 1996-07-24 1999-10-05 Applied Materials, Inc. Method and apparatus for purging the back side of a substrate during chemical vapor processing
EP0826985A1 (de) * 1996-08-28 1998-03-04 Applied Materials, Inc. Reflektor für eine Halbleiterbehandlungskammer
JPH1073492A (ja) * 1996-08-30 1998-03-17 Sumitomo Sitix Corp 半導体基板の温度測定方法並びにその処理装置
US6395363B1 (en) * 1996-11-05 2002-05-28 Applied Materials, Inc. Sloped substrate support
US5874711A (en) * 1997-04-17 1999-02-23 Ag Associates Apparatus and method for determining the temperature of a radiating surface
US6157106A (en) * 1997-05-16 2000-12-05 Applied Materials, Inc. Magnetically-levitated rotor system for an RTP chamber
US6035100A (en) * 1997-05-16 2000-03-07 Applied Materials, Inc. Reflector cover for a semiconductor processing chamber
US5967661A (en) * 1997-06-02 1999-10-19 Sensarray Corporation Temperature calibration substrate
US6027244A (en) * 1997-07-24 2000-02-22 Steag Rtp Systems, Inc. Apparatus for determining the temperature of a semi-transparent radiating body
US6226453B1 (en) * 1997-09-16 2001-05-01 Applied Materials, Inc. Temperature probe with fiber optic core
DE19748088A1 (de) * 1997-10-30 1999-05-12 Wacker Siltronic Halbleitermat Verfahren und Vorrichtung zum Erkennen einer Fehllage einer Halbleiterscheibe
EP0921558A3 (de) * 1997-12-08 2002-04-24 STEAG RTP Systems GmbH Optische Strahlungsmess-Vorrichtung
KR100266328B1 (ko) * 1997-12-23 2000-10-02 김규현 티타늄실리사이드형성방법및이를이용한티타늄실리사이드의형성온도보정방법
US6110284A (en) * 1998-01-09 2000-08-29 Applied Materials, Inc. Apparatus and a method for shielding light emanating from a light source heating a semicondutor processing chamber
US7244677B2 (en) * 1998-02-04 2007-07-17 Semitool. Inc. Method for filling recessed micro-structures with metallization in the production of a microelectronic device
US6079874A (en) * 1998-02-05 2000-06-27 Applied Materials, Inc. Temperature probes for measuring substrate temperature
US6200388B1 (en) * 1998-02-11 2001-03-13 Applied Materials, Inc. Substrate support for a thermal processing chamber
US6183130B1 (en) 1998-02-20 2001-02-06 Applied Materials, Inc. Apparatus for substrate temperature measurement using a reflecting cavity and detector
US6007241A (en) * 1998-02-20 1999-12-28 Applied Materials, Inc. Apparatus and method for measuring substrate temperature
US6056434A (en) * 1998-03-12 2000-05-02 Steag Rtp Systems, Inc. Apparatus and method for determining the temperature of objects in thermal processing chambers
US6050722A (en) * 1998-03-25 2000-04-18 Thundat; Thomas G. Non-contact passive temperature measuring system and method of operation using micro-mechanical sensors
US6048403A (en) * 1998-04-01 2000-04-11 Applied Materials, Inc. Multi-ledge substrate support for a thermal processing chamber
US6818437B1 (en) * 1998-05-16 2004-11-16 Applera Corporation Instrument for monitoring polymerase chain reaction of DNA
US6086246A (en) * 1998-05-26 2000-07-11 Novellus Systems, Inc. Two-element plasma resistant lightpipe assembly
US6169271B1 (en) 1998-07-13 2001-01-02 Mattson Technology, Inc. Model based method for wafer temperature control in a thermal processing system for semiconductor manufacturing
TW403835B (en) * 1998-07-28 2000-09-01 Steag Rtp Systems Gmbh The method of temperature measurement used in calibration regardless of the emitting rate and the apparatus thereof
US6374150B2 (en) * 1998-07-30 2002-04-16 Applied Materials, Inc. Method and apparatus for monitoring and/or end point detecting a process
US6127658A (en) * 1998-08-04 2000-10-03 Steag C.V.D. Systems, Ltd. Wafer heating apparatus and method with radiation absorptive peripheral barrier blocking stray radiation
US6174080B1 (en) * 1998-08-06 2001-01-16 Applied Materials, Inc. Apparatus and methods for measuring substrate temperature
US6900413B2 (en) 1998-08-12 2005-05-31 Aviza Technology, Inc. Hot wall rapid thermal processor
US6462310B1 (en) 1998-08-12 2002-10-08 Asml Us, Inc Hot wall rapid thermal processor
US6300600B1 (en) 1998-08-12 2001-10-09 Silicon Valley Group, Inc. Hot wall rapid thermal processor
US6164816A (en) * 1998-08-14 2000-12-26 Applied Materials, Inc. Tuning a substrate temperature measurement system
US6535628B2 (en) * 1998-10-15 2003-03-18 Applied Materials, Inc. Detection of wafer fragments in a wafer processing apparatus
US6156079A (en) * 1998-10-21 2000-12-05 Ho; Henry Window support member for a semiconductor processing system
KR100634642B1 (ko) * 1998-11-20 2006-10-16 스티그 알티피 시스템즈, 인코포레이티드 반도체 웨이퍼의 급속 가열 및 냉각 장치
US6467952B2 (en) 1999-03-19 2002-10-22 Tokyo Electron Limited Virtual blackbody radiation system and radiation temperature measuring system
JP2000266603A (ja) 1999-03-19 2000-09-29 Tokyo Electron Ltd 放射温度測定方法及び放射温度測定装置
US6183127B1 (en) * 1999-03-29 2001-02-06 Eaton Corporation System and method for the real time determination of the in situ emissivity of a workpiece during processing
US6461036B1 (en) * 1999-03-29 2002-10-08 Axcelis Technologies, Inc. System and method for determining stray light in a thermal processing system
US6577926B1 (en) * 1999-03-30 2003-06-10 Taiwan Semiconductor Manufacturing Co., Ltd. Method of detecting and controlling in-situ faults in rapid thermal processing systems
US6268270B1 (en) * 1999-04-30 2001-07-31 Advanced Micro Devices, Inc. Lot-to-lot rapid thermal processing (RTP) chamber preheat optimization
US6293696B1 (en) 1999-05-03 2001-09-25 Steag Rtp Systems, Inc. System and process for calibrating pyrometers in thermal processing chambers
US6151446A (en) * 1999-07-06 2000-11-21 Applied Materials, Inc. Apparatus and method for thermally processing substrates including a processor using multiple detection signals
US6803546B1 (en) * 1999-07-08 2004-10-12 Applied Materials, Inc. Thermally processing a substrate
US6280081B1 (en) * 1999-07-09 2001-08-28 Applied Materials, Inc. Methods and apparatus for calibrating temperature measurements and measuring currents
US6780374B2 (en) 2000-12-08 2004-08-24 Semitool, Inc. Method and apparatus for processing a microelectronic workpiece at an elevated temperature
US6471913B1 (en) 2000-02-09 2002-10-29 Semitool, Inc. Method and apparatus for processing a microelectronic workpiece including an apparatus and method for executing a processing step at an elevated temperature
DE10119047B4 (de) * 2000-04-21 2010-12-09 Tokyo Electron Ltd. Thermische Bearbeitungsvorrichtung und thermisches Bearbeitungsverfahren
IT1317648B1 (it) * 2000-05-19 2003-07-15 Tecnica S R L Termometro ad infrarossi perfezionato
JP4698807B2 (ja) * 2000-09-26 2011-06-08 東京エレクトロン株式会社 半導体基板熱処理装置
US6492625B1 (en) 2000-09-27 2002-12-10 Emcore Corporation Apparatus and method for controlling temperature uniformity of substrates
US6966235B1 (en) * 2000-10-06 2005-11-22 Paton Eric N Remote monitoring of critical parameters for calibration of manufacturing equipment and facilities
JP2002202192A (ja) * 2000-10-24 2002-07-19 Tokyo Electron Ltd 温度測定方法、熱処理装置及び方法、コンピュータプログラム、並びに、放射温度計
US6856849B2 (en) 2000-12-06 2005-02-15 Advanced Micro Devices, Inc. Method for adjusting rapid thermal processing (RTP) recipe setpoints based on wafer electrical test (WET) parameters
US7306367B2 (en) * 2001-01-24 2007-12-11 Electro-Optics Research & Development Ltd. Emissivity-independent silicon surface temperature measurement
US6344631B1 (en) 2001-05-11 2002-02-05 Applied Materials, Inc. Substrate support assembly and processing apparatus
KR100396216B1 (ko) * 2001-06-19 2003-09-02 코닉 시스템 주식회사 급속 열처리 장치 내의 웨이퍼 온도 측정방법
US6740196B2 (en) * 2002-02-21 2004-05-25 Taiwan Semiconductor Manufacturing Co., Ltd. RTA chamber with in situ reflective index monitor
US7005601B2 (en) 2002-04-18 2006-02-28 Applied Materials, Inc. Thermal flux processing by scanning
US6987240B2 (en) * 2002-04-18 2006-01-17 Applied Materials, Inc. Thermal flux processing by scanning
JP2004020337A (ja) * 2002-06-14 2004-01-22 Komatsu Ltd 温度測定装置
US6818864B2 (en) 2002-08-09 2004-11-16 Asm America, Inc. LED heat lamp arrays for CVD heating
US7456116B2 (en) 2002-09-19 2008-11-25 Applied Materials, Inc. Gap-fill depositions in the formation of silicon containing dielectric materials
US7431967B2 (en) * 2002-09-19 2008-10-07 Applied Materials, Inc. Limited thermal budget formation of PMD layers
US20070212850A1 (en) * 2002-09-19 2007-09-13 Applied Materials, Inc. Gap-fill depositions in the formation of silicon containing dielectric materials
US7141483B2 (en) * 2002-09-19 2006-11-28 Applied Materials, Inc. Nitrous oxide anneal of TEOS/ozone CVD for improved gapfill
US6897131B2 (en) * 2002-09-20 2005-05-24 Applied Materials, Inc. Advances in spike anneal processes for ultra shallow junctions
US7704327B2 (en) * 2002-09-30 2010-04-27 Applied Materials, Inc. High temperature anneal with improved substrate support
US6839507B2 (en) * 2002-10-07 2005-01-04 Applied Materials, Inc. Black reflector plate
US7041931B2 (en) * 2002-10-24 2006-05-09 Applied Materials, Inc. Stepped reflector plate
US6835914B2 (en) 2002-11-05 2004-12-28 Mattson Technology, Inc. Apparatus and method for reducing stray light in substrate processing chambers
EP1568068A1 (de) * 2002-11-22 2005-08-31 Applied Materials, Inc. Rückseitenheizkammer
US8536492B2 (en) * 2003-10-27 2013-09-17 Applied Materials, Inc. Processing multilayer semiconductors with multiple heat sources
US7127367B2 (en) 2003-10-27 2006-10-24 Applied Materials, Inc. Tailored temperature uniformity
US20080090309A1 (en) * 2003-10-27 2008-04-17 Ranish Joseph M Controlled annealing method
US6976782B1 (en) 2003-11-24 2005-12-20 Lam Research Corporation Methods and apparatus for in situ substrate temperature monitoring
US8658945B2 (en) * 2004-02-27 2014-02-25 Applied Materials, Inc. Backside rapid thermal processing of patterned wafers
US7528051B2 (en) * 2004-05-14 2009-05-05 Applied Materials, Inc. Method of inducing stresses in the channel region of a transistor
US20060021703A1 (en) * 2004-07-29 2006-02-02 Applied Materials, Inc. Dual gas faceplate for a showerhead in a semiconductor wafer processing system
US7642171B2 (en) * 2004-08-04 2010-01-05 Applied Materials, Inc. Multi-step anneal of thin films for film densification and improved gap-fill
JP4925571B2 (ja) 2004-08-09 2012-04-25 アプライド マテリアルズ インコーポレイテッド 基板の熱的性質判定方法及び熱処理条件の決定方法
US7283734B2 (en) 2004-08-24 2007-10-16 Fujitsu Limited Rapid thermal processing apparatus and method of manufacture of semiconductor device
US7112763B2 (en) * 2004-10-26 2006-09-26 Applied Materials, Inc. Method and apparatus for low temperature pyrometry useful for thermally processing silicon wafers
US8422127B2 (en) * 2005-03-17 2013-04-16 Hamamatsu Photonics K.K. Microscopic image capturing device
US7767927B2 (en) 2005-05-16 2010-08-03 Ultratech, Inc. Methods and apparatus for remote temperature measurement of a specular surface
US9482468B2 (en) * 2005-09-14 2016-11-01 Mattson Technology, Inc. Repeatable heat-treating methods and apparatus
US7691204B2 (en) * 2005-09-30 2010-04-06 Applied Materials, Inc. Film formation apparatus and methods including temperature and emissivity/pattern compensation
US8372203B2 (en) * 2005-09-30 2013-02-12 Applied Materials, Inc. Apparatus temperature control and pattern compensation
US20070215049A1 (en) * 2006-03-14 2007-09-20 Applied Materials, Inc. Transfer of wafers with edge grip
DE102006017892A1 (de) * 2006-04-13 2007-10-31 Bayerisches Zentrum für angewandte Energieforschung e.V. (ZAE Bayern) Verfahren und Vorrichtung zur berührungslosen Temperaturmessung in einem thermischen Prozess
KR100867191B1 (ko) * 2006-11-02 2008-11-06 주식회사 유진테크 기판처리장치 및 기판처리방법
US8222574B2 (en) * 2007-01-15 2012-07-17 Applied Materials, Inc. Temperature measurement and control of wafer support in thermal processing chamber
JP2010525581A (ja) * 2007-05-01 2010-07-22 マトソン テクノロジー カナダ インコーポレイテッド 照射パルス熱処理方法および装置
US7572052B2 (en) * 2007-07-10 2009-08-11 Applied Materials, Inc. Method for monitoring and calibrating temperature in semiconductor processing chambers
US8367983B2 (en) * 2008-04-09 2013-02-05 Applied Materials, Inc. Apparatus including heating source reflective filter for pyrometry
US8283607B2 (en) * 2008-04-09 2012-10-09 Applied Materials, Inc. Apparatus including heating source reflective filter for pyrometry
US8548311B2 (en) 2008-04-09 2013-10-01 Applied Materials, Inc. Apparatus and method for improved control of heating and cooling of substrates
US20090298300A1 (en) * 2008-05-09 2009-12-03 Applied Materials, Inc. Apparatus and Methods for Hyperbaric Rapid Thermal Processing
US8111978B2 (en) * 2008-07-11 2012-02-07 Applied Materials, Inc. Rapid thermal processing chamber with shower head
US20100014748A1 (en) * 2008-07-21 2010-01-21 International Business Machines Corporation Method and apparatus for real time fault detection in high speed semiconductor processes
US8109669B2 (en) * 2008-11-19 2012-02-07 Applied Materials, Inc. Temperature uniformity measurement during thermal processing
US9449858B2 (en) 2010-08-09 2016-09-20 Applied Materials, Inc. Transparent reflector plate for rapid thermal processing chamber
DE102011081259A1 (de) 2010-09-28 2012-03-29 Carl Zeiss Smt Gmbh Anordnung zur Spiegeltemperaturmessung und/oder zur thermischen Aktuierung eines Spiegels in einer mikrolithographischen Projektionsbelichtungsanlage
WO2012048419A1 (en) 2010-10-15 2012-04-19 Mattson Technology Canada, Inc. Methods, apparatus and media for determining a shape of an irradiance pulse to which a workpiece is to be exposed
JP6209518B2 (ja) 2011-09-21 2017-10-04 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィ投影露光装置のミラーの熱作動用の構成体
CN102564598B (zh) * 2012-01-06 2013-09-25 电子科技大学 一种红外探测器测温的定标和校正方法及相应的测温方法
US8980767B2 (en) * 2012-01-13 2015-03-17 Applied Materials, Inc. Methods and apparatus for processing a substrate
CN104302807B (zh) * 2012-05-18 2017-04-05 维易科精密仪器国际贸易(上海)有限公司 用于化学气相沉积的具有铁磁流体密封件的转盘反应器
US9018108B2 (en) 2013-01-25 2015-04-28 Applied Materials, Inc. Low shrinkage dielectric films
US9064760B2 (en) * 2013-05-20 2015-06-23 Varian Semiconductor Equipment Associates, Inc. Substrate processing based on resistivity measurements
JP2017502529A (ja) * 2013-11-11 2017-01-19 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 赤外線カメラを使用した低温ｒｔｐ制御
SG11201606084RA (en) 2014-01-27 2016-08-30 Veeco Instr Inc Wafer carrier having retention pockets with compound radii for chemical vapor deposition systems
US10041842B2 (en) * 2014-11-06 2018-08-07 Applied Materials, Inc. Method for measuring temperature by refraction and change in velocity of waves with magnetic susceptibility
CN106158622B (zh) * 2014-11-12 2020-07-24 台湾积体电路制造股份有限公司 用于热映射和热工艺控制的方法和装置
JP6625005B2 (ja) * 2015-06-30 2019-12-25 東京エレクトロン株式会社 温度測定方法
CN107868942B (zh) * 2016-09-27 2019-11-29 北京北方华创微电子装备有限公司 一种去气腔室及其去气方法和半导体处理设备
CN110603634A (zh) * 2017-05-03 2019-12-20 应用材料公司 在高温陶瓷加热器上的集成衬底温度测量
KR101983326B1 (ko) * 2017-09-29 2019-05-29 에이피시스템 주식회사 기판 처리 방법 및 기판 처리 장치
US11670490B2 (en) 2017-09-29 2023-06-06 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuit fabrication system with adjustable gas injector
US11262250B2 (en) 2018-02-28 2022-03-01 Applied Materials, Inc. Method for measuring a temperature
US11022496B2 (en) 2018-06-29 2021-06-01 Tecnimed S.R.L. Infrared thermometer
CN112097949B (zh) * 2020-08-10 2022-08-02 中国电子科技集团公司第十三研究所 一种光热反射测温方法及装置
US11828656B2 (en) 2020-11-20 2023-11-28 Applied Materials, Inc. Reflector plate for substrate processing
CN113790818B (zh) * 2021-08-10 2023-09-26 中国电子科技集团公司第十三研究所 可见光热反射测温方法及测温设备

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5234230B2 (de) * 1971-12-27 1977-09-02
BE880666A (fr) * 1979-12-17 1980-04-16 Centre Rech Metallurgique Dispositif et procede pour mesurer l'emissivite d'un produit
US4611930A (en) * 1983-12-16 1986-09-16 Exxon Research And Engineering Co. Pyrometer measurements in the presence of intense ambient radiation
US4659234A (en) * 1984-06-18 1987-04-21 Aluminum Company Of America Emissivity error correcting method for radiation thermometer
US4708474A (en) * 1985-11-14 1987-11-24 United Technologies Corporation Reflection corrected radiosity optical pyrometer
US4881823A (en) * 1988-03-29 1989-11-21 Purdue Research Foundation Radiation thermometry
US4919542A (en) * 1988-04-27 1990-04-24 Ag Processing Technologies, Inc. Emissivity correction apparatus and method
US5061084A (en) * 1988-04-27 1991-10-29 Ag Processing Technologies, Inc. Pyrometer apparatus and method
US5188458A (en) * 1988-04-27 1993-02-23 A G Processing Technologies, Inc. Pyrometer apparatus and method
KR960013995B1 (ko) * 1988-07-15 1996-10-11 도오교오 에레구토론 가부시끼가이샤 반도체 웨이퍼 기판의 표면온도 측정 방법 및 열처리 장치
US4956538A (en) * 1988-09-09 1990-09-11 Texas Instruments, Incorporated Method and apparatus for real-time wafer temperature measurement using infrared pyrometry in advanced lamp-heated rapid thermal processors
US4969748A (en) * 1989-04-13 1990-11-13 Peak Systems, Inc. Apparatus and method for compensating for errors in temperature measurement of semiconductor wafers during rapid thermal processing
US4984902A (en) * 1989-04-13 1991-01-15 Peak Systems, Inc. Apparatus and method for compensating for errors in temperature measurement of semiconductor wafers during rapid thermal processing
US5029117A (en) * 1989-04-24 1991-07-02 Tektronix, Inc. Method and apparatus for active pyrometry
JPH03105223A (ja) * 1989-09-19 1991-05-02 Minolta Camera Co Ltd 温度測定方法
US5011295A (en) * 1989-10-17 1991-04-30 Houston Advanced Research Center Method and apparatus to simultaneously measure emissivities and thermodynamic temperatures of remote objects
US5155336A (en) 1990-01-19 1992-10-13 Applied Materials, Inc. Rapid thermal heating apparatus and method
JPH0443928A (ja) * 1990-06-08 1992-02-13 Kobe Steel Ltd 被測定物の放射率と温度の測定方法
JPH05215611A (ja) * 1992-02-05 1993-08-24 Kobe Steel Ltd 非接触式温度検出装置
US5226732A (en) * 1992-04-17 1993-07-13 International Business Machines Corporation Emissivity independent temperature measurement systems
EP0612862A1 (de) * 1993-02-24 1994-08-31 Applied Materials, Inc. Messung der Temperatur von Wafern

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008026002A1 (de) * 2008-05-29 2009-12-17 Von Ardenne Anlagentechnik Gmbh Verfahren zur Temperaturmessung an Substraten und Vakuumbeschichtungsanlage
DE102008026002B4 (de) * 2008-05-29 2013-04-25 Von Ardenne Anlagentechnik Gmbh Verfahren zur Temperaturmessung an Substraten und Vakuumbeschichtungsanlage
DE102008026002B9 (de) * 2008-05-29 2013-05-16 Von Ardenne Anlagentechnik Gmbh Verfahren zur Temperaturmessung an Substraten und Vakuumbeschichtungsanlage
DE102012005428A1 (de) * 2012-03-16 2013-09-19 Centrotherm Thermal Solutions Gmbh & Co. Kg Vorrichtung zum Bestimmen der Temperatur eines Substrats
DE102012005428B4 (de) * 2012-03-16 2014-10-16 Centrotherm Photovoltaics Ag Vorrichtung zum Bestimmen der Temperatur eines Substrats

Also Published As

Publication number Publication date
KR100342796B1 (ko) 2002-11-30
JP4033939B2 (ja) 2008-01-16
US5848842A (en) 1998-12-15
DE69523424D1 (de) 2001-11-29
JPH1055974A (ja) 1998-02-24
JP2007208287A (ja) 2007-08-16
US5660472A (en) 1997-08-26
JPH08255800A (ja) 1996-10-01
KR960026525A (ko) 1996-07-22
EP0718610B1 (de) 2001-10-24
ATE207611T1 (de) 2001-11-15
JP2711239B2 (ja) 1998-02-10
EP0718610A1 (de) 1996-06-26

Similar Documents

Publication Publication Date Title
DE69523424T2 (de) Verfahren und Gerät zur Messung der Substrattemperatur
KR970077431A (ko) 기판 온도 측정을 위한 방법 및 장치
US6283629B1 (en) Method of calibrating a radiation thermometer
ATE115721T1 (de) Verfahren und anordnung zum eichen eines optischen pyrometers und standardplättchen dafür.
DE59706568D1 (de) Verfahren und vorrichtung zur fehlerkorrektur eines heterodyn-interferometers
GB2064780B (en) Apparatus for measuring the efficiency of combustion appliances
KR900002058A (ko) 교정된 측정기구 사이에서 교정데이타(Calibration Data) 전달방법과 장치
DE3586884D1 (de) Schaltung und verfahren zur messung und digitalisierung eines widerstandes.
DE59007272D1 (de) Verfahren zur selbsttätigen Eichung oder Nacheichung von Messungen einer physikalischen Grösse.
DE69604842D1 (de) Verfahren und Vorrichtung zur Bestimmung der Dichte eines Isoliergases in einer elektrischen Anlage
DE69633841D1 (de) Methode und Apparat zur lokalen Temperaturmessung für hochauflösende in-situ Messung
SE9100393L (sv) Foerfarande och anordning foer bestaemning av termisk laengdutvidgning hos laangstraeckta kroppar
EE03185B1 (et) Meetod mõõtetulemuste täpsuse parandamiseks ja sellele vastav kulumõõtur
ATE85733T1 (de) Verfahren und anordnung zur auswertung einer analogen elektrischen messgroesse.
DE59206380D1 (de) Verfahren zur Bestimmung der Konzentration eines Gases in einer Metallschmelze
JPS5542058A (en) Method of measuring temperature in furnace
SU901851A1 (ru) Способ определени показател тепловой инерции термопреобразовател
RU1789914C (ru) Способ градуировани измерителей теплопроводности
SU857744A1 (ru) Способ градуировки термометра сопротивлени
Mangum Standard Reference Materials 933 and 934: The National Bureau of Standards' precision thermometers for the clinical laboratory
JP2663629B2 (ja) 溶存酸素計の自動校正方法
RU2229105C2 (ru) Способ определения температуры стенки резервуара
RU2054689C1 (ru) Способ автоматической поверки стрелочных измерительных приборов
JPS6165101A (ja) 長さ測定器
RU92008502A (ru) Способ автоматической поверки стрелочных измерительных приборов