DE69516767D1 - Referenzschaltung mit kontrollierter temperaturabhängigkeit - Google Patents

Referenzschaltung mit kontrollierter temperaturabhängigkeit

Info

Publication number
DE69516767D1
DE69516767D1 DE69516767T DE69516767T DE69516767D1 DE 69516767 D1 DE69516767 D1 DE 69516767D1 DE 69516767 T DE69516767 T DE 69516767T DE 69516767 T DE69516767 T DE 69516767T DE 69516767 D1 DE69516767 D1 DE 69516767D1
Authority
DE
Germany
Prior art keywords
controlled temperature
temperature dependency
reference switching
switching
dependency
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69516767T
Other languages
English (en)
Other versions
DE69516767T2 (de
Inventor
Robert Blauschild
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Application granted granted Critical
Publication of DE69516767D1 publication Critical patent/DE69516767D1/de
Publication of DE69516767T2 publication Critical patent/DE69516767T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/245—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the temperature

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Control Of Electrical Variables (AREA)
  • Amplifiers (AREA)
  • Networks Using Active Elements (AREA)
DE69516767T 1994-02-14 1995-02-14 Referenzschaltung mit kontrollierter temperaturabhängigkeit Expired - Fee Related DE69516767T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US19541094A 1994-02-14 1994-02-14
PCT/IB1995/000098 WO1995022093A1 (en) 1994-02-14 1995-02-14 A reference circuit having a controlled temperature dependence

Publications (2)

Publication Number Publication Date
DE69516767D1 true DE69516767D1 (de) 2000-06-15
DE69516767T2 DE69516767T2 (de) 2000-11-23

Family

ID=22721317

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69516767T Expired - Fee Related DE69516767T2 (de) 1994-02-14 1995-02-14 Referenzschaltung mit kontrollierter temperaturabhängigkeit

Country Status (5)

Country Link
US (1) US6091286A (de)
EP (1) EP0698236B1 (de)
JP (1) JPH08509312A (de)
DE (1) DE69516767T2 (de)
WO (1) WO1995022093A1 (de)

Families Citing this family (78)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5774013A (en) * 1995-11-30 1998-06-30 Rockwell Semiconductor Systems, Inc. Dual source for constant and PTAT current
SE515345C2 (sv) * 1996-05-07 2001-07-16 Ericsson Telefon Ab L M Temperaturberoende strömalstring
EP0915407B1 (de) * 1997-11-05 2009-03-04 STMicroelectronics S.r.l. Temperaturkorrelierter Spannungsgeneratorschaltkreis und zugehöriger Spannungsregler für die Speisung einer Speicherzelle mit einer einzigen Stromversorgung, insbesondere vom FLASH-Typ
US6262618B1 (en) * 1999-01-12 2001-07-17 International Rectifier Corporation Shoot-through prevention circuit for motor controller integrated circuit gate driver
JP3954245B2 (ja) * 1999-07-22 2007-08-08 株式会社東芝 電圧発生回路
JP4212767B2 (ja) 2000-12-21 2009-01-21 旭化成エレクトロニクス株式会社 高速電流スイッチ回路および高周波電流源
JP4833455B2 (ja) * 2001-08-28 2011-12-07 株式会社リコー 定電圧発生回路および半導体装置
US6879214B2 (en) * 2002-09-20 2005-04-12 Triquint Semiconductor, Inc. Bias circuit with controlled temperature dependence
US6836160B2 (en) * 2002-11-19 2004-12-28 Intersil Americas Inc. Modified Brokaw cell-based circuit for generating output current that varies linearly with temperature
US6831504B1 (en) 2003-03-27 2004-12-14 National Semiconductor Corporation Constant temperature coefficient self-regulating CMOS current source
US7296247B1 (en) * 2004-08-17 2007-11-13 Xilinx, Inc. Method and apparatus to improve pass transistor performance
US7116158B2 (en) * 2004-10-05 2006-10-03 Texas Instruments Incorporated Bandgap reference circuit for ultra-low current applications
US20060132223A1 (en) * 2004-12-22 2006-06-22 Cherek Brian J Temperature-stable voltage reference circuit
US7598822B2 (en) * 2005-04-07 2009-10-06 Texas Instruments Incorporated Process, supply, and temperature insensitive integrated time reference circuit
US7215185B2 (en) * 2005-05-26 2007-05-08 Texas Instruments Incorporated Threshold voltage extraction for producing a ramp signal with reduced process sensitivity
US7411436B2 (en) * 2006-02-28 2008-08-12 Cornell Research Foundation, Inc. Self-timed thermally-aware circuits and methods of use thereof
US7798703B2 (en) 2007-05-09 2010-09-21 Infineon Technologies Ag Apparatus and method for measuring local surface temperature of semiconductor device
US7719341B2 (en) * 2007-10-25 2010-05-18 Atmel Corporation MOS resistor with second or higher order compensation
JP4901703B2 (ja) * 2007-11-28 2012-03-21 株式会社東芝 温度補償回路
KR101465598B1 (ko) * 2008-06-05 2014-12-15 삼성전자주식회사 기준 전압 발생 장치 및 방법
JP2010021435A (ja) * 2008-07-11 2010-01-28 Panasonic Corp Ｍｏｓトランジスタ抵抗器、フィルタおよび集積回路
US8022744B2 (en) * 2008-10-03 2011-09-20 Cambridge Semiconductor Limited Signal generator
JP5107272B2 (ja) 2009-01-15 2012-12-26 株式会社東芝 温度補償回路
US8044740B2 (en) * 2009-09-03 2011-10-25 S3C, Inc. Temperature compensated RC oscillator for signal conditioning ASIC using source bulk voltage of MOSFET
US8273617B2 (en) 2009-09-30 2012-09-25 Suvolta, Inc. Electronic devices and systems, and methods for making and using the same
US8421162B2 (en) 2009-09-30 2013-04-16 Suvolta, Inc. Advanced transistors with punch through suppression
US8188785B2 (en) 2010-02-04 2012-05-29 Semiconductor Components Industries, Llc Mixed-mode circuits and methods of producing a reference current and a reference voltage
US8878511B2 (en) * 2010-02-04 2014-11-04 Semiconductor Components Industries, Llc Current-mode programmable reference circuits and methods therefor
US8680840B2 (en) * 2010-02-11 2014-03-25 Semiconductor Components Industries, Llc Circuits and methods of producing a reference current or voltage
US8530286B2 (en) 2010-04-12 2013-09-10 Suvolta, Inc. Low power semiconductor transistor structure and method of fabrication thereof
US8569128B2 (en) 2010-06-21 2013-10-29 Suvolta, Inc. Semiconductor structure and method of fabrication thereof with mixed metal types
US8759872B2 (en) 2010-06-22 2014-06-24 Suvolta, Inc. Transistor with threshold voltage set notch and method of fabrication thereof
US8404551B2 (en) 2010-12-03 2013-03-26 Suvolta, Inc. Source/drain extension control for advanced transistors
US8461875B1 (en) 2011-02-18 2013-06-11 Suvolta, Inc. Digital circuits having improved transistors, and methods therefor
US8525271B2 (en) 2011-03-03 2013-09-03 Suvolta, Inc. Semiconductor structure with improved channel stack and method for fabrication thereof
US8400219B2 (en) 2011-03-24 2013-03-19 Suvolta, Inc. Analog circuits having improved transistors, and methods therefor
US8748270B1 (en) 2011-03-30 2014-06-10 Suvolta, Inc. Process for manufacturing an improved analog transistor
US8999861B1 (en) 2011-05-11 2015-04-07 Suvolta, Inc. Semiconductor structure with substitutional boron and method for fabrication thereof
US8796048B1 (en) 2011-05-11 2014-08-05 Suvolta, Inc. Monitoring and measurement of thin film layers
US8811068B1 (en) 2011-05-13 2014-08-19 Suvolta, Inc. Integrated circuit devices and methods
US8569156B1 (en) 2011-05-16 2013-10-29 Suvolta, Inc. Reducing or eliminating pre-amorphization in transistor manufacture
US8735987B1 (en) 2011-06-06 2014-05-27 Suvolta, Inc. CMOS gate stack structures and processes
US8995204B2 (en) 2011-06-23 2015-03-31 Suvolta, Inc. Circuit devices and methods having adjustable transistor body bias
US8629016B1 (en) 2011-07-26 2014-01-14 Suvolta, Inc. Multiple transistor types formed in a common epitaxial layer by differential out-diffusion from a doped underlayer
US8748986B1 (en) 2011-08-05 2014-06-10 Suvolta, Inc. Electronic device with controlled threshold voltage
WO2013022753A2 (en) 2011-08-05 2013-02-14 Suvolta, Inc. Semiconductor devices having fin structures and fabrication methods thereof
US8614128B1 (en) 2011-08-23 2013-12-24 Suvolta, Inc. CMOS structures and processes based on selective thinning
US8645878B1 (en) 2011-08-23 2014-02-04 Suvolta, Inc. Porting a circuit design from a first semiconductor process to a second semiconductor process
US8713511B1 (en) 2011-09-16 2014-04-29 Suvolta, Inc. Tools and methods for yield-aware semiconductor manufacturing process target generation
US9236466B1 (en) 2011-10-07 2016-01-12 Mie Fujitsu Semiconductor Limited Analog circuits having improved insulated gate transistors, and methods therefor
US8895327B1 (en) 2011-12-09 2014-11-25 Suvolta, Inc. Tipless transistors, short-tip transistors, and methods and circuits therefor
US8819603B1 (en) 2011-12-15 2014-08-26 Suvolta, Inc. Memory circuits and methods of making and designing the same
US8883600B1 (en) 2011-12-22 2014-11-11 Suvolta, Inc. Transistor having reduced junction leakage and methods of forming thereof
US8599623B1 (en) 2011-12-23 2013-12-03 Suvolta, Inc. Circuits and methods for measuring circuit elements in an integrated circuit device
US8970289B1 (en) 2012-01-23 2015-03-03 Suvolta, Inc. Circuits and devices for generating bi-directional body bias voltages, and methods therefor
US8877619B1 (en) 2012-01-23 2014-11-04 Suvolta, Inc. Process for manufacture of integrated circuits with different channel doping transistor architectures and devices therefrom
US9093550B1 (en) 2012-01-31 2015-07-28 Mie Fujitsu Semiconductor Limited Integrated circuits having a plurality of high-K metal gate FETs with various combinations of channel foundation structure and gate stack structure and methods of making same
US9406567B1 (en) 2012-02-28 2016-08-02 Mie Fujitsu Semiconductor Limited Method for fabricating multiple transistor devices on a substrate with varying threshold voltages
US8863064B1 (en) 2012-03-23 2014-10-14 Suvolta, Inc. SRAM cell layout structure and devices therefrom
US9299698B2 (en) 2012-06-27 2016-03-29 Mie Fujitsu Semiconductor Limited Semiconductor structure with multiple transistors having various threshold voltages
US8637955B1 (en) 2012-08-31 2014-01-28 Suvolta, Inc. Semiconductor structure with reduced junction leakage and method of fabrication thereof
US9112057B1 (en) 2012-09-18 2015-08-18 Mie Fujitsu Semiconductor Limited Semiconductor devices with dopant migration suppression and method of fabrication thereof
US9041126B2 (en) 2012-09-21 2015-05-26 Mie Fujitsu Semiconductor Limited Deeply depleted MOS transistors having a screening layer and methods thereof
JP2016500927A (ja) 2012-10-31 2016-01-14 三重富士通セミコンダクター株式会社 低変動トランジスタ・ペリフェラル回路を備えるｄｒａｍ型デバイス、及び関連する方法
US8816754B1 (en) 2012-11-02 2014-08-26 Suvolta, Inc. Body bias circuits and methods
US9093997B1 (en) 2012-11-15 2015-07-28 Mie Fujitsu Semiconductor Limited Slew based process and bias monitors and related methods
KR20140071176A (ko) * 2012-12-03 2014-06-11 현대자동차주식회사 전류 발생 회로
US9070477B1 (en) 2012-12-12 2015-06-30 Mie Fujitsu Semiconductor Limited Bit interleaved low voltage static random access memory (SRAM) and related methods
US9112484B1 (en) 2012-12-20 2015-08-18 Mie Fujitsu Semiconductor Limited Integrated circuit process and bias monitors and related methods
US9268885B1 (en) 2013-02-28 2016-02-23 Mie Fujitsu Semiconductor Limited Integrated circuit device methods and models with predicted device metric variations
US9299801B1 (en) 2013-03-14 2016-03-29 Mie Fujitsu Semiconductor Limited Method for fabricating a transistor device with a tuned dopant profile
US9478571B1 (en) 2013-05-24 2016-10-25 Mie Fujitsu Semiconductor Limited Buried channel deeply depleted channel transistor
US9710006B2 (en) 2014-07-25 2017-07-18 Mie Fujitsu Semiconductor Limited Power up body bias circuits and methods
US9319013B2 (en) 2014-08-19 2016-04-19 Mie Fujitsu Semiconductor Limited Operational amplifier input offset correction with transistor threshold voltage adjustment
JP6328849B2 (ja) 2014-10-22 2018-05-23 株式会社村田製作所 擬似抵抗回路及び電荷検出回路
JP6185632B2 (ja) * 2016-08-23 2017-08-23 ルネサスエレクトロニクス株式会社 電圧発生回路を備える半導体装置
US10222816B1 (en) * 2016-09-09 2019-03-05 Marvell Israel (M.I.S.L) Ltd. Compensated source-follower based current source
JP7075172B2 (ja) * 2017-06-01 2022-05-25 エイブリック株式会社 基準電圧回路及び半導体装置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4127783A (en) * 1977-04-25 1978-11-28 Motorola, Inc. Regulated constant current circuit
DE3136780A1 (de) * 1981-09-16 1983-03-31 Siemens AG, 1000 Berlin und 8000 München Integrierte halbleiterschaltung
US4577119A (en) * 1983-11-17 1986-03-18 At&T Bell Laboratories Trimless bandgap reference voltage generator
US5086238A (en) * 1985-07-22 1992-02-04 Hitachi, Ltd. Semiconductor supply incorporating internal power supply for compensating for deviation in operating condition and fabrication process conditions
US4843265A (en) * 1986-02-10 1989-06-27 Dallas Semiconductor Corporation Temperature compensated monolithic delay circuit
US5087831A (en) * 1990-03-30 1992-02-11 Texas Instruments Incorporated Voltage as a function of temperature stabilization circuit and method of operation
US5072136A (en) * 1990-04-16 1991-12-10 Advanced Micro Devices, Inc. Ecl output buffer circuit with improved compensation
JPH07112155B2 (ja) * 1990-11-16 1995-11-29 株式会社東芝 スイッチング定電流源回路
US5198701A (en) * 1990-12-24 1993-03-30 Davies Robert B Current source with adjustable temperature variation
EP0504983A1 (de) * 1991-03-20 1992-09-23 Koninklijke Philips Electronics N.V. Referenzschaltung zum Zuführen eines Referenzstromes mit vorbestimmtem Temperaturkoeffizienten
US5124580A (en) * 1991-04-30 1992-06-23 Microunity Systems Engineering, Inc. BiCMOS logic gate having linearly operated load FETs
US5281906A (en) * 1991-10-29 1994-01-25 Lattice Semiconductor Corporation Tunable voltage reference circuit to provide an output voltage with a predetermined temperature coefficient independent of variation in supply voltage
JP2900207B2 (ja) * 1992-04-02 1999-06-02 シャープ株式会社 定電流回路

Also Published As

Publication number Publication date
DE69516767T2 (de) 2000-11-23
WO1995022093A1 (en) 1995-08-17
EP0698236B1 (de) 2000-05-10
EP0698236A1 (de) 1996-02-28
JPH08509312A (ja) 1996-10-01
US6091286A (en) 2000-07-18

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee