DE69513628T2 - Herstellung elektronischer artikel aus dünnschicht-schaltungen - Google Patents

Herstellung elektronischer artikel aus dünnschicht-schaltungen

Info

Publication number
DE69513628T2
DE69513628T2 DE69513628T DE69513628T DE69513628T2 DE 69513628 T2 DE69513628 T2 DE 69513628T2 DE 69513628 T DE69513628 T DE 69513628T DE 69513628 T DE69513628 T DE 69513628T DE 69513628 T2 DE69513628 T2 DE 69513628T2
Authority
DE
Germany
Prior art keywords
manufacture
thin
layer circuits
electronic items
items
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69513628T
Other languages
English (en)
Other versions
DE69513628D1 (de
Inventor
Nigel Young
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tpo Hong Kong Holding Ltd Hongkong Hk
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Publication of DE69513628D1 publication Critical patent/DE69513628D1/de
Application granted granted Critical
Publication of DE69513628T2 publication Critical patent/DE69513628T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1237—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a different composition, shape, layout or thickness of the gate insulator in different devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136204—Arrangements to prevent high voltage or static electricity failures
DE69513628T 1994-08-20 1995-07-13 Herstellung elektronischer artikel aus dünnschicht-schaltungen Expired - Lifetime DE69513628T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB9416899A GB9416899D0 (en) 1994-08-20 1994-08-20 Manufacture of electronic devices comprising thin-film circuitry
PCT/IB1995/000559 WO1996007300A2 (en) 1994-08-20 1995-07-13 Manufacture of electronic devices comprising thin-film circuitry

Publications (2)

Publication Number Publication Date
DE69513628D1 DE69513628D1 (de) 2000-01-05
DE69513628T2 true DE69513628T2 (de) 2000-12-07

Family

ID=10760185

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69513628T Expired - Lifetime DE69513628T2 (de) 1994-08-20 1995-07-13 Herstellung elektronischer artikel aus dünnschicht-schaltungen

Country Status (7)

Country Link
US (1) US5798534A (de)
EP (1) EP0724777B1 (de)
JP (1) JP4039639B2 (de)
KR (1) KR100361395B1 (de)
DE (1) DE69513628T2 (de)
GB (1) GB9416899D0 (de)
WO (1) WO1996007300A2 (de)

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US5985690A (en) * 1995-01-30 1999-11-16 Nec Corporation Method of manufacturing contact image sensor
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KR100252308B1 (ko) * 1997-01-10 2000-04-15 구본준, 론 위라하디락사 박막트랜지스터 어레이
JP3379896B2 (ja) * 1997-11-14 2003-02-24 シャープ株式会社 液晶表示装置及びその検査方法
FR2778497B1 (fr) * 1998-05-07 2003-06-13 Sgs Thomson Microelectronics Fusible de circuit integre, a focalisation de courant
US6242302B1 (en) * 1998-09-03 2001-06-05 Micron Technology, Inc. Semiconductor processing methods of forming contact openings, methods of forming electrical connections and interconnections, and integrated circuitry
GB9825314D0 (en) * 1998-11-20 1999-01-13 Koninkl Philips Electronics Nv Active matrix liquid crystal display devices
KR100660813B1 (ko) * 1999-12-31 2006-12-26 엘지.필립스 엘시디 주식회사 엑스레이 디텍터용 어레이기판 제조방법
TWI236557B (en) * 2000-09-29 2005-07-21 Au Optronics Corp TFT LCD and method of making the same
GB0100733D0 (en) * 2001-01-11 2001-02-21 Koninkl Philips Electronics Nv A method of manufacturing an active matrix substrate
KR100466963B1 (ko) * 2001-12-27 2005-01-24 엘지.필립스 엘시디 주식회사 액티브 매트릭스형 유기발광다이오드 소자용 박막트랜지스터
TW560042B (en) * 2002-09-18 2003-11-01 Vanguard Int Semiconduct Corp ESD protection device
WO2004063799A1 (en) * 2002-12-03 2004-07-29 Quanta Display Inc. Method for manufacturing the thin film transistor array
TWI220313B (en) * 2003-07-30 2004-08-11 Au Optronics Corp Electrostatic discharge circuit
CN1324703C (zh) * 2003-08-11 2007-07-04 友达光电股份有限公司 静电放电保护电路的结构
US7119411B2 (en) * 2004-02-17 2006-10-10 Au Optronics Corp. Interconnect structure for TFT-array substrate and method for fabricating the same
TWI255959B (en) * 2004-02-23 2006-06-01 Toppoly Optoelectronics Corp Method of manufacturing thin film transistor array
JP4671765B2 (ja) * 2004-06-03 2011-04-20 株式会社半導体エネルギー研究所 記憶装置及びその作製方法
WO2005119779A1 (en) * 2004-06-03 2005-12-15 Semiconductor Energy Laboratory Co., Ltd. Memory device and manufacturing method of the same
JP4884784B2 (ja) * 2005-01-28 2012-02-29 株式会社半導体エネルギー研究所 半導体装置の作製方法及び半導体装置
US7719872B2 (en) 2005-12-28 2010-05-18 Semiconductor Energy Laboratory Co., Ltd. Write-once nonvolatile memory with redundancy capability
US20080024427A1 (en) * 2006-07-26 2008-01-31 Prime View International Co., Ltd. Electronic ink display panel
KR20060093321A (ko) * 2006-08-05 2006-08-24 박장용 와이어 송급 장치에서 크레이터를 설정할 수 있는 용접기시스템
EP2067173A4 (de) 2006-10-04 2015-03-18 Semiconductor Energy Lab Halbleiterbauelement und herstellungsverfahren dafür
CN101529591B (zh) 2006-10-24 2012-06-27 株式会社半导体能源研究所 包含存储器件的半导体器件及其驱动方法
KR101416876B1 (ko) 2006-11-17 2014-07-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제조방법
JP5263757B2 (ja) 2007-02-02 2013-08-14 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5525694B2 (ja) 2007-03-14 2014-06-18 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の作製方法
US8217455B2 (en) * 2008-04-14 2012-07-10 International Business Machines Corporation Semiconductor-on-insulator device structures with a body-to-substrate connection for enhanced electrostatic discharge protection, and design structures for such semiconductor-on-insulator device structures
JP2010066331A (ja) * 2008-09-09 2010-03-25 Fujifilm Corp 表示装置
KR101586522B1 (ko) * 2010-01-06 2016-01-18 가부시키가이샤 제이올레드 액티브 매트릭스 기판, 표시 패널 및 이들의 검사 방법
CN102540524B (zh) * 2010-12-30 2015-10-07 北京京东方光电科技有限公司 防止静电击穿的方法、阵列基板的制造方法和显示背板
CN103123428B (zh) * 2011-11-18 2017-05-17 上海中航光电子有限公司 Tft‑lcd阵列基板及其制造方法
CN102651547B (zh) * 2012-01-12 2013-06-05 京东方科技集团股份有限公司 一种静电放电保护电路及包括该保护电路的显示装置
CN102983134B (zh) * 2012-12-13 2015-03-25 京东方科技集团股份有限公司 显示装置、阵列基板及其制备方法
KR20180066937A (ko) * 2016-12-09 2018-06-20 삼성디스플레이 주식회사 표시 장치

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JPH0814667B2 (ja) * 1984-05-28 1996-02-14 セイコーエプソン株式会社 半導体装置の製造方法
US4875130A (en) * 1988-07-06 1989-10-17 National Semiconductor Corporation ESD low resistance input structure
JP2610328B2 (ja) * 1988-12-21 1997-05-14 株式会社東芝 液晶表示素子の製造方法
US5019002A (en) * 1989-07-12 1991-05-28 Honeywell, Inc. Method of manufacturing flat panel backplanes including electrostatic discharge prevention and displays made thereby
JP2764139B2 (ja) * 1989-10-20 1998-06-11 ホシデン・フィリップス・ディスプレイ株式会社 アクティブマトリックス液晶表示素子
US5195010A (en) * 1990-01-23 1993-03-16 Thomson, S.A. Electrostatic discharge voltage protection circuit for a solid state instrument
GB2245741A (en) * 1990-06-27 1992-01-08 Philips Electronic Associated Active matrix liquid crystal devices
JPH04130668A (ja) * 1990-09-20 1992-05-01 Stanley Electric Co Ltd 薄膜トランジスタ装置
US5220443A (en) * 1991-04-29 1993-06-15 Nec Corporation Matrix wiring substrate and active matrix display having non-linear resistance elements for electrostatic discharge protection
JP3199808B2 (ja) * 1991-05-14 2001-08-20 セイコーインスツルメンツ株式会社 半導体集積回路装置
JP2779085B2 (ja) * 1991-12-27 1998-07-23 シャープ株式会社 薄膜トランジスタ基板
DE69319760T2 (de) * 1992-02-21 1999-02-11 Toshiba Kawasaki Kk Flüssigkristallanzeigevorrichtung
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US5497146A (en) * 1992-06-03 1996-03-05 Frontec, Incorporated Matrix wiring substrates
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GB9220220D0 (en) * 1992-09-24 1992-11-04 Philips Electronics Uk Ltd Electronic device manufacture
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US5448095A (en) * 1993-12-20 1995-09-05 Eastman Kodak Company Semiconductors with protective layers

Also Published As

Publication number Publication date
DE69513628D1 (de) 2000-01-05
EP0724777B1 (de) 1999-12-01
KR960705371A (ko) 1996-10-09
WO1996007300A3 (en) 1996-05-02
GB9416899D0 (en) 1994-10-12
EP0724777A1 (de) 1996-08-07
JP4039639B2 (ja) 2008-01-30
WO1996007300A2 (en) 1996-03-07
US5798534A (en) 1998-08-25
KR100361395B1 (ko) 2003-03-06
JPH09504657A (ja) 1997-05-06

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8327 Change in the person/name/address of the patent owner

Owner name: TPO HONG KONG HOLDING LTD., HONGKONG, HK

8328 Change in the person/name/address of the agent

Representative=s name: PATENTANWAELTE MOELL UND BITTERICH, 76829 LANDAU