DE69513361T2 - Trägerbehälter für Substratscheiben - Google Patents

Trägerbehälter für Substratscheiben

Info

Publication number
DE69513361T2
DE69513361T2 DE69513361T DE69513361T DE69513361T2 DE 69513361 T2 DE69513361 T2 DE 69513361T2 DE 69513361 T DE69513361 T DE 69513361T DE 69513361 T DE69513361 T DE 69513361T DE 69513361 T2 DE69513361 T2 DE 69513361T2
Authority
DE
Germany
Prior art keywords
wafer
container
angle
vertical
axis
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69513361T
Other languages
German (de)
English (en)
Other versions
DE69513361D1 (de
Inventor
Mamoru Akimoto
Masayuki Kobayashi
Shuichi Kobayashi
Shinichi Okoshi
Youichi Serizawa
Tsutomu Yuri
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Quartz Products Co Ltd
Shin Etsu Handotai Co Ltd
Yamagata Shin Etsu Quartz Co Ltd
Original Assignee
Shin Etsu Quartz Products Co Ltd
Shin Etsu Handotai Co Ltd
Yamagata Shin Etsu Quartz Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Quartz Products Co Ltd, Shin Etsu Handotai Co Ltd, Yamagata Shin Etsu Quartz Co Ltd filed Critical Shin Etsu Quartz Products Co Ltd
Publication of DE69513361D1 publication Critical patent/DE69513361D1/de
Application granted granted Critical
Publication of DE69513361T2 publication Critical patent/DE69513361T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
    • H01L21/67306—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements characterized by a material, a roughness, a coating or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
    • H01L21/67309—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements characterized by the substrate support

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE69513361T 1994-09-30 1995-09-19 Trägerbehälter für Substratscheiben Expired - Fee Related DE69513361T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP25980294A JP2732224B2 (ja) 1994-09-30 1994-09-30 ウエーハ支持ボート

Publications (2)

Publication Number Publication Date
DE69513361D1 DE69513361D1 (de) 1999-12-23
DE69513361T2 true DE69513361T2 (de) 2000-05-11

Family

ID=17339208

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69513361T Expired - Fee Related DE69513361T2 (de) 1994-09-30 1995-09-19 Trägerbehälter für Substratscheiben

Country Status (7)

Country Link
US (1) US5595604A (fr)
EP (1) EP0704554B1 (fr)
JP (1) JP2732224B2 (fr)
KR (1) KR100227915B1 (fr)
DE (1) DE69513361T2 (fr)
MY (1) MY113316A (fr)
TW (1) TW290706B (fr)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0155930B1 (ko) * 1995-11-28 1998-12-01 김광호 종형확산로의 보우트-바
JPH10256161A (ja) * 1997-03-07 1998-09-25 Mitsubishi Electric Corp Ｃｖｄ用治具、それを用いた半導体装置の製造方法、およびｃｖｄ用治具の製造方法
JP3715073B2 (ja) * 1997-04-22 2005-11-09 大日本スクリーン製造株式会社 熱処理装置
US6225594B1 (en) 1999-04-15 2001-05-01 Integrated Materials, Inc. Method and apparatus for securing components of wafer processing fixtures
US6205993B1 (en) 1999-04-15 2001-03-27 Integrated Materials, Inc. Method and apparatus for fabricating elongate crystalline members
US6196211B1 (en) * 1999-04-15 2001-03-06 Integrated Materials, Inc. Support members for wafer processing fixtures
JP4812147B2 (ja) * 1999-09-07 2011-11-09 株式会社日立製作所 太陽電池の製造方法
EP1156515A1 (fr) * 2000-05-16 2001-11-21 Semiconductor 300 GmbH & Co. KG Dispositif de transport d'objets en forme de disque
US6455395B1 (en) 2000-06-30 2002-09-24 Integrated Materials, Inc. Method of fabricating silicon structures including fixtures for supporting wafers
US6450346B1 (en) 2000-06-30 2002-09-17 Integrated Materials, Inc. Silicon fixtures for supporting wafers during thermal processing
US6727191B2 (en) * 2001-02-26 2004-04-27 Integrated Materials, Inc. High temperature hydrogen anneal of silicon wafers supported on a silicon fixture
US20040173948A1 (en) * 2002-09-19 2004-09-09 Pandelisev Kiril A. Process and apparatus for silicon boat, silicon tubing and other silicon based member fabrication
AU2003249029A1 (en) * 2002-07-15 2004-02-02 Aviza Technology, Inc. Control of a gaseous environment in a wafer loading chamber
DE10239775B3 (de) * 2002-08-29 2004-05-13 Wacker Siltronic Ag Verfahren zur Herstellung eines Siliciumwafers mit einer mit polykristallinem Silicium beschichteten Rückseite und Siliciumwafer hergestellt nach diesem Verfahren
US20050098107A1 (en) * 2003-09-24 2005-05-12 Du Bois Dale R. Thermal processing system with cross-flow liner
US20050121145A1 (en) * 2003-09-25 2005-06-09 Du Bois Dale R. Thermal processing system with cross flow injection system with rotatable injectors
KR100527671B1 (ko) * 2004-02-19 2005-11-28 삼성전자주식회사 웨이퍼 상에 막을 형성하는 방법
TW201320222A (zh) * 2011-06-23 2013-05-16 Entegris Inc 太陽能電池製程載具
DE102013113687A1 (de) * 2013-12-09 2015-06-11 Otto-Von-Guericke-Universität Magdeburg Beschichtungssystem
JP6469046B2 (ja) * 2016-07-15 2019-02-13 クアーズテック株式会社 縦型ウエハボート
CN106801223B (zh) * 2017-02-01 2019-04-09 东南大学 一种双热源垂直型气氛反应炉
US20230111655A1 (en) * 2020-02-07 2023-04-13 Kyocera Corporation Wafer boat
CN112831833B (zh) * 2020-12-31 2024-04-09 中核北方核燃料元件有限公司 一种可定位的物料舟皿
CN115662928B (zh) * 2022-11-16 2023-08-29 杭州盾源聚芯半导体科技有限公司 一种降低硅片损伤的硅舟

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1137807B (de) * 1961-06-09 1962-10-11 Siemens Ag Verfahren zur Herstellung von Halbleiteranordnungen durch einkristalline Abscheidung von Halbleitermaterial aus der Gasphase
JPS60257129A (ja) * 1984-06-04 1985-12-18 Hitachi Ltd 膜形成装置
EP0164928A3 (fr) * 1984-06-04 1987-07-29 Texas Instruments Incorporated Réacteur vertical à parois chaudes pour dépôt chimique à partir de la phase vapeur
JPS6127625A (ja) * 1984-07-18 1986-02-07 Deisuko Saiyaa Japan:Kk 半導体物品の熱処理方法及びこれに使用する装置
JPS6247134A (ja) * 1985-08-26 1987-02-28 Mitsubishi Electric Corp 半導体製造装置
DE3807710A1 (de) * 1988-03-09 1989-09-21 Heraeus Schott Quarzschmelze Traegerhorde
TW242196B (fr) * 1992-12-03 1995-03-01 Saint Gdbain Norton Ind Ceramics Corp

Also Published As

Publication number Publication date
KR100227915B1 (ko) 1999-11-01
TW290706B (fr) 1996-11-11
EP0704554B1 (fr) 1999-11-17
MY113316A (en) 2002-01-31
KR960012421A (ko) 1996-04-20
EP0704554A1 (fr) 1996-04-03
DE69513361D1 (de) 1999-12-23
JPH08102486A (ja) 1996-04-16
US5595604A (en) 1997-01-21
JP2732224B2 (ja) 1998-03-25

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee