DE69511781D1 - Optisches Element für photolithographie und Verfahren zur Auswertung eines optischen Elements - Google Patents

Optisches Element für photolithographie und Verfahren zur Auswertung eines optischen Elements

Info

Publication number
DE69511781D1
DE69511781D1 DE69511781T DE69511781T DE69511781D1 DE 69511781 D1 DE69511781 D1 DE 69511781D1 DE 69511781 T DE69511781 T DE 69511781T DE 69511781 T DE69511781 T DE 69511781T DE 69511781 D1 DE69511781 D1 DE 69511781D1
Authority
DE
Germany
Prior art keywords
optical element
photolithography
evaluating
optical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69511781T
Other languages
English (en)
Other versions
DE69511781T2 (de
Inventor
Hiroyuki Hiraiwa
Issey Tanaka
Katsuya Miyoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Application granted granted Critical
Publication of DE69511781D1 publication Critical patent/DE69511781D1/de
Publication of DE69511781T2 publication Critical patent/DE69511781T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G03F7/706—Aberration measurement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70241—Optical aspects of refractive lens systems, i.e. comprising only refractive elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70308—Optical correction elements, filters or phase plates for manipulating imaging light, e.g. intensity, wavelength, polarisation, phase or image shift
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S501/00—Compositions: ceramic
    • Y10S501/90—Optical glass, e.g. silent on refractive index and/or ABBE number
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S501/00—Compositions: ceramic
    • Y10S501/90—Optical glass, e.g. silent on refractive index and/or ABBE number
    • Y10S501/904—Infrared transmitting or absorbing
DE69511781T 1994-06-16 1995-06-14 Optisches Element für photolithographie und Verfahren zur Auswertung eines optischen Elements Expired - Lifetime DE69511781T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13472394A JP3369730B2 (ja) 1994-06-16 1994-06-16 光リソグラフィー用光学部材の評価方法

Publications (2)

Publication Number Publication Date
DE69511781D1 true DE69511781D1 (de) 1999-10-07
DE69511781T2 DE69511781T2 (de) 2000-01-13

Family

ID=15135101

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69511781T Expired - Lifetime DE69511781T2 (de) 1994-06-16 1995-06-14 Optisches Element für photolithographie und Verfahren zur Auswertung eines optischen Elements

Country Status (5)

Country Link
US (2) US6025955A (de)
EP (1) EP0687896B1 (de)
JP (1) JP3369730B2 (de)
KR (1) KR100291564B1 (de)
DE (1) DE69511781T2 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3315658B2 (ja) * 1998-12-28 2002-08-19 キヤノン株式会社 投影装置および露光装置
US6373552B1 (en) 1999-01-20 2002-04-16 Asm Lithography B.V. Optical correction plate, and its application in a lithographic projection apparatus
JP4626117B2 (ja) * 1999-07-05 2011-02-02 株式会社ニコン 石英ガラス部材の製造方法
US6710930B2 (en) 1999-12-01 2004-03-23 Nikon Corporation Illumination optical system and method of making exposure apparatus
US20040042094A1 (en) * 2000-12-28 2004-03-04 Tomoyuki Matsuyama Projection optical system and production method therefor, exposure system and production method therefor, and production method for microdevice
WO2002098290A2 (en) * 2001-04-18 2002-12-12 Bausch & Lomb Incorporated Objective measurement of eye refraction
EP1413870A4 (de) * 2001-07-05 2006-11-15 Nikon Corp Optisches glied für die optische lithographie und bewertungsverfahren dafür
US6788389B2 (en) * 2001-07-10 2004-09-07 Nikon Corporation Production method of projection optical system
US20030131626A1 (en) * 2001-10-08 2003-07-17 Schott Glas Arrangement for improving the homogeneity of the refractive index of quartz glass objects
WO2003102529A1 (fr) * 2002-06-04 2003-12-11 Nikon Corporation Procede de mesure de l'homogeneite de l'indice de refraction d'un element optique
US7245361B2 (en) 2002-06-04 2007-07-17 Nikon Corporation Method for evaluating refractive index homogeneity of optical member
CN101002128A (zh) 2004-09-13 2007-07-18 尼康股份有限公司 投影光学系统及其制造方法、曝光装置及曝光方法
JP5294804B2 (ja) * 2008-10-31 2013-09-18 三菱電機株式会社 光学調整装置
KR101336399B1 (ko) * 2009-11-19 2013-12-04 캐논 가부시끼가이샤 계측 장치, 가공 방법 및 컴퓨터 판독가능한 저장 매체
DE102013226668A1 (de) * 2013-12-19 2015-06-25 Carl Zeiss Smt Gmbh Verfahren zum Kalibrieren einer Wellenfronterzeugungseinrichtung
CN107003113B (zh) * 2014-12-16 2018-10-30 富士胶片株式会社 形状测定装置及形状测定方法
FR3062476B1 (fr) * 2017-01-27 2020-12-25 Imagine Optic Methode d'evaluation de la qualite de la mesure d'un front d'onde et systemes mettant en œuvre une telle methode

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4696569A (en) * 1985-04-11 1987-09-29 The United States Of America As Represented By The Secretary Of The Air Force Method of measuring spherical aberration and apparatus therefor
US5234742A (en) * 1989-03-03 1993-08-10 Shin-Etsu Chemical Co., Ltd. Pellicle for lithography
ATE116448T1 (de) * 1989-06-09 1995-01-15 Heraeus Quarzglas Optische teile und rohlinge aus synthetischem siliziumdioxidglas und verfahren zu ihrer herstellung.
US5410428A (en) * 1990-10-30 1995-04-25 Shin-Etsu Quartz Products Co. Ltd. Optical member made of high-purity and transparent synthetic silica glass and method for production thereof or blank thereof
KR0165695B1 (ko) * 1991-06-29 1998-12-15 아이하라 테루히코 엑시머레이저용 합성석영유리 광학부재 및 그의 제조방법
US5157555A (en) * 1991-12-04 1992-10-20 General Electric Company Apparatus for adjustable correction of spherical aberration
US5326729A (en) * 1992-02-07 1994-07-05 Asahi Glass Company Ltd. Transparent quartz glass and process for its production
JPH06134723A (ja) 1992-10-27 1994-05-17 Onoda Cement Co Ltd 脱水成形プレスの脱水盤装置
US5702495A (en) * 1993-02-10 1997-12-30 Nikon Corporation Silica glass member for UV-lithography, method for silica glass production, and method for silica glass member production
US5696038A (en) * 1995-09-12 1997-12-09 Corning Incorporated Boule oscillation patterns in methods of producing fused silica glass

Also Published As

Publication number Publication date
DE69511781T2 (de) 2000-01-13
JPH085505A (ja) 1996-01-12
US6025955A (en) 2000-02-15
KR100291564B1 (ko) 2001-09-17
EP0687896B1 (de) 1999-09-01
JP3369730B2 (ja) 2003-01-20
EP0687896A1 (de) 1995-12-20
KR960002516A (ko) 1996-01-26
US6181469B1 (en) 2001-01-30

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