CH690857A5
(de)
*
|
1995-07-04 |
2001-02-15 |
Erich Bergmann |
Anlage zur plasmaunterstützten physikalischen Hochvakuumbedampfung von Werkstücken mit verschleissfesten Schichten und Verfahren zur Durchführung in dieser Anlage
|
US6200412B1
(en)
*
|
1996-02-16 |
2001-03-13 |
Novellus Systems, Inc. |
Chemical vapor deposition system including dedicated cleaning gas injection
|
DE19610012B4
(de)
*
|
1996-03-14 |
2005-02-10 |
Unaxis Deutschland Holding Gmbh |
Verfahren zur Stabilisierung eines Arbeitspunkts beim reaktiven Zerstäuben in einer Sauerstoff enthaltenden Atmosphäre
|
JPH1079372A
(ja)
*
|
1996-09-03 |
1998-03-24 |
Matsushita Electric Ind Co Ltd |
プラズマ処理方法及びプラズマ処理装置
|
DE19702187C2
(de)
*
|
1997-01-23 |
2002-06-27 |
Fraunhofer Ges Forschung |
Verfahren und Einrichtung zum Betreiben von Magnetronentladungen
|
ATE468420T1
(de)
*
|
1997-02-20 |
2010-06-15 |
Shibaura Mechatronics Corp |
Stromversorgungseinheit für sputtervorrichtung
|
DE69842229D1
(de)
*
|
1997-02-20 |
2011-06-01 |
Shibaura Mechatronics Corp |
Stromversorgungsvorrichtung zum sputtern und sputtervorrichtung, die diese verwendet
|
JP3041413B2
(ja)
|
1997-03-10 |
2000-05-15 |
工業技術院長 |
レーヤードアルミニウム微粒子の生成法及びその応用
|
US5897753A
(en)
*
|
1997-05-28 |
1999-04-27 |
Advanced Energy Industries, Inc. |
Continuous deposition of insulating material using multiple anodes alternated between positive and negative voltages
|
US6276072B1
(en)
*
|
1997-07-10 |
2001-08-21 |
Applied Materials, Inc. |
Method and apparatus for heating and cooling substrates
|
DE19740793C2
(de)
*
|
1997-09-17 |
2003-03-20 |
Bosch Gmbh Robert |
Verfahren zur Beschichtung von Oberflächen mittels einer Anlage mit Sputterelektroden und Verwendung des Verfahrens
|
US7244677B2
(en)
*
|
1998-02-04 |
2007-07-17 |
Semitool. Inc. |
Method for filling recessed micro-structures with metallization in the production of a microelectronic device
|
WO1999040615A1
(en)
|
1998-02-04 |
1999-08-12 |
Semitool, Inc. |
Method and apparatus for low-temperature annealing of metallization micro-structures in the production of a microelectronic device
|
US6113771A
(en)
|
1998-04-21 |
2000-09-05 |
Applied Materials, Inc. |
Electro deposition chemistry
|
EP0991795B1
(de)
|
1998-04-21 |
2006-02-22 |
Applied Materials, Inc. |
Elektroplattierungssystem und verfahren zur elektroplattierung auf substraten
|
US6416647B1
(en)
|
1998-04-21 |
2002-07-09 |
Applied Materials, Inc. |
Electro-chemical deposition cell for face-up processing of single semiconductor substrates
|
US6994776B2
(en)
*
|
1998-06-01 |
2006-02-07 |
Semitool Inc. |
Method and apparatus for low temperature annealing of metallization micro-structure in the production of a microelectronic device
|
US6287977B1
(en)
|
1998-07-31 |
2001-09-11 |
Applied Materials, Inc. |
Method and apparatus for forming improved metal interconnects
|
US6132575A
(en)
*
|
1998-09-28 |
2000-10-17 |
Alcatel |
Magnetron reactor for providing a high density, inductively coupled plasma source for sputtering metal and dielectric films
|
US6254760B1
(en)
|
1999-03-05 |
2001-07-03 |
Applied Materials, Inc. |
Electro-chemical deposition system and method
|
US6228233B1
(en)
|
1998-11-30 |
2001-05-08 |
Applied Materials, Inc. |
Inflatable compliant bladder assembly
|
US6290865B1
(en)
|
1998-11-30 |
2001-09-18 |
Applied Materials, Inc. |
Spin-rinse-drying process for electroplated semiconductor wafers
|
US6258220B1
(en)
|
1998-11-30 |
2001-07-10 |
Applied Materials, Inc. |
Electro-chemical deposition system
|
US6544399B1
(en)
|
1999-01-11 |
2003-04-08 |
Applied Materials, Inc. |
Electrodeposition chemistry for filling apertures with reflective metal
|
US6379522B1
(en)
|
1999-01-11 |
2002-04-30 |
Applied Materials, Inc. |
Electrodeposition chemistry for filling of apertures with reflective metal
|
US7192494B2
(en)
*
|
1999-03-05 |
2007-03-20 |
Applied Materials, Inc. |
Method and apparatus for annealing copper films
|
US6136163A
(en)
*
|
1999-03-05 |
2000-10-24 |
Applied Materials, Inc. |
Apparatus for electro-chemical deposition with thermal anneal chamber
|
JP4351755B2
(ja)
*
|
1999-03-12 |
2009-10-28 |
キヤノンアネルバ株式会社 |
薄膜作成方法および薄膜作成装置
|
US6571657B1
(en)
|
1999-04-08 |
2003-06-03 |
Applied Materials Inc. |
Multiple blade robot adjustment apparatus and associated method
|
US6557237B1
(en)
|
1999-04-08 |
2003-05-06 |
Applied Materials, Inc. |
Removable modular cell for electro-chemical plating and method
|
US6837978B1
(en)
|
1999-04-08 |
2005-01-04 |
Applied Materials, Inc. |
Deposition uniformity control for electroplating apparatus, and associated method
|
US6662673B1
(en)
|
1999-04-08 |
2003-12-16 |
Applied Materials, Inc. |
Linear motion apparatus and associated method
|
US6551484B2
(en)
|
1999-04-08 |
2003-04-22 |
Applied Materials, Inc. |
Reverse voltage bias for electro-chemical plating system and method
|
US6585876B2
(en)
|
1999-04-08 |
2003-07-01 |
Applied Materials Inc. |
Flow diffuser to be used in electro-chemical plating system and method
|
US6582578B1
(en)
|
1999-04-08 |
2003-06-24 |
Applied Materials, Inc. |
Method and associated apparatus for tilting a substrate upon entry for metal deposition
|
US6551488B1
(en)
|
1999-04-08 |
2003-04-22 |
Applied Materials, Inc. |
Segmenting of processing system into wet and dry areas
|
US6086730A
(en)
|
1999-04-22 |
2000-07-11 |
Komag, Incorporated |
Method of sputtering a carbon protective film on a magnetic disk with high sp3 content
|
US20030213772A9
(en)
*
|
1999-07-09 |
2003-11-20 |
Mok Yeuk-Fai Edwin |
Integrated semiconductor substrate bevel cleaning apparatus and method
|
US6516815B1
(en)
|
1999-07-09 |
2003-02-11 |
Applied Materials, Inc. |
Edge bead removal/spin rinse dry (EBR/SRD) module
|
US6566272B2
(en)
|
1999-07-23 |
2003-05-20 |
Applied Materials Inc. |
Method for providing pulsed plasma during a portion of a semiconductor wafer process
|
US6818103B1
(en)
|
1999-10-15 |
2004-11-16 |
Advanced Energy Industries, Inc. |
Method and apparatus for substrate biasing in multiple electrode sputtering systems
|
US6193855B1
(en)
|
1999-10-19 |
2001-02-27 |
Applied Materials, Inc. |
Use of modulated inductive power and bias power to reduce overhang and improve bottom coverage
|
US6350353B2
(en)
|
1999-11-24 |
2002-02-26 |
Applied Materials, Inc. |
Alternate steps of IMP and sputtering process to improve sidewall coverage
|
US6344419B1
(en)
|
1999-12-03 |
2002-02-05 |
Applied Materials, Inc. |
Pulsed-mode RF bias for sidewall coverage improvement
|
US6342134B1
(en)
*
|
2000-02-11 |
2002-01-29 |
Agere Systems Guardian Corp. |
Method for producing piezoelectric films with rotating magnetron sputtering system
|
DE10015244C2
(de)
*
|
2000-03-28 |
2002-09-19 |
Fraunhofer Ges Forschung |
Verfahren und Schaltungsanordnung zur pulsförmigen Energieeinspeisung in Magnetronentladungen
|
US6913680B1
(en)
|
2000-05-02 |
2005-07-05 |
Applied Materials, Inc. |
Method of application of electrical biasing to enhance metal deposition
|
WO2001090446A2
(en)
|
2000-05-23 |
2001-11-29 |
Applied Materials, Inc. |
Method and apparatus to overcome anomalies in copper seed layers and to tune for feature size and aspect ratio
|
US6554979B2
(en)
|
2000-06-05 |
2003-04-29 |
Applied Materials, Inc. |
Method and apparatus for bias deposition in a modulating electric field
|
US20040079633A1
(en)
*
|
2000-07-05 |
2004-04-29 |
Applied Materials, Inc. |
Apparatus for electro chemical deposition of copper metallization with the capability of in-situ thermal annealing
|
US6576110B2
(en)
|
2000-07-07 |
2003-06-10 |
Applied Materials, Inc. |
Coated anode apparatus and associated method
|
US20020112964A1
(en)
*
|
2000-07-12 |
2002-08-22 |
Applied Materials, Inc. |
Process window for gap-fill on very high aspect ratio structures using additives in low acid copper baths
|
US6544895B1
(en)
*
|
2000-08-17 |
2003-04-08 |
Micron Technology, Inc. |
Methods for use of pulsed voltage in a plasma reactor
|
US6485572B1
(en)
*
|
2000-08-28 |
2002-11-26 |
Micron Technology, Inc. |
Use of pulsed grounding source in a plasma reactor
|
US6471830B1
(en)
|
2000-10-03 |
2002-10-29 |
Veeco/Cvc, Inc. |
Inductively-coupled-plasma ionized physical-vapor deposition apparatus, method and system
|
US6524455B1
(en)
*
|
2000-10-04 |
2003-02-25 |
Eni Technology, Inc. |
Sputtering apparatus using passive arc control system and method
|
US6413382B1
(en)
|
2000-11-03 |
2002-07-02 |
Applied Materials, Inc. |
Pulsed sputtering with a small rotating magnetron
|
US6610189B2
(en)
|
2001-01-03 |
2003-08-26 |
Applied Materials, Inc. |
Method and associated apparatus to mechanically enhance the deposition of a metal film within a feature
|
US6478937B2
(en)
|
2001-01-19 |
2002-11-12 |
Applied Material, Inc. |
Substrate holder system with substrate extension apparatus and associated method
|
US6402904B1
(en)
|
2001-03-16 |
2002-06-11 |
4 Wave, Inc. |
System and method for performing sputter deposition using independent ion and electron sources and a target biased with an a-symmetric bi-polar DC pulse signal
|
US6679976B2
(en)
|
2001-03-16 |
2004-01-20 |
4Wave, Inc. |
System and method for performing sputter deposition with multiple targets using independent ion and electron sources and independent target biasing with DC pulse signals
|
EP1381703B1
(de)
*
|
2001-04-04 |
2011-01-26 |
Tosoh Smd, Inc. |
Verfahren zur bestimmung der kritischen grösse eines einschlusses in einem sputtertarget aus aluminium oder aluminiumlegierung
|
KR100571116B1
(ko)
|
2001-09-28 |
2006-04-13 |
시바우라 메카트로닉스 가부시키가이샤 |
스퍼터링용 전원 장치
|
US6746591B2
(en)
|
2001-10-16 |
2004-06-08 |
Applied Materials Inc. |
ECP gap fill by modulating the voltate on the seed layer to increase copper concentration inside feature
|
US6824612B2
(en)
|
2001-12-26 |
2004-11-30 |
Applied Materials, Inc. |
Electroless plating system
|
US6770565B2
(en)
|
2002-01-08 |
2004-08-03 |
Applied Materials Inc. |
System for planarizing metal conductive layers
|
US20030146102A1
(en)
*
|
2002-02-05 |
2003-08-07 |
Applied Materials, Inc. |
Method for forming copper interconnects
|
DE10392235T5
(de)
*
|
2002-02-14 |
2005-07-07 |
Trikon Technologies Limited, Newport |
Vorrichtung zur Plasmabearbeitung
|
US6911136B2
(en)
*
|
2002-04-29 |
2005-06-28 |
Applied Materials, Inc. |
Method for regulating the electrical power applied to a substrate during an immersion process
|
DE10222909A1
(de)
*
|
2002-05-22 |
2003-12-04 |
Unaxis Balzers Ag |
Sputterverfahren bzw. Vorrichtung zur Herstellung von eigenspannungsoptimierten Beschichtungen
|
ITMO20020152A1
(it)
*
|
2002-06-05 |
2003-12-05 |
Mariangela Moggi |
Dispositivo per il clampaggio di grandi vasi
|
WO2004017356A2
(en)
*
|
2002-08-16 |
2004-02-26 |
The Regents Of The University Of California |
Process and apparatus for pulsed dc magnetron reactive sputtering of thin film coatings on large substrates using smaller sputter cathodes
|
US7364644B2
(en)
*
|
2002-08-29 |
2008-04-29 |
Micron Technology, Inc. |
Silver selenide film stoichiometry and morphology control in sputter deposition
|
US6808607B2
(en)
*
|
2002-09-25 |
2004-10-26 |
Advanced Energy Industries, Inc. |
High peak power plasma pulsed supply with arc handling
|
US7147759B2
(en)
*
|
2002-09-30 |
2006-12-12 |
Zond, Inc. |
High-power pulsed magnetron sputtering
|
US6896773B2
(en)
*
|
2002-11-14 |
2005-05-24 |
Zond, Inc. |
High deposition rate sputtering
|
US20040112735A1
(en)
*
|
2002-12-17 |
2004-06-17 |
Applied Materials, Inc. |
Pulsed magnetron for sputter deposition
|
US20040132311A1
(en)
*
|
2003-01-06 |
2004-07-08 |
Applied Materials, Inc. |
Method of etching high-K dielectric materials
|
US7087144B2
(en)
*
|
2003-01-31 |
2006-08-08 |
Applied Materials, Inc. |
Contact ring with embedded flexible contacts
|
US7025861B2
(en)
|
2003-02-06 |
2006-04-11 |
Applied Materials |
Contact plating apparatus
|
US6942813B2
(en)
*
|
2003-03-05 |
2005-09-13 |
Applied Materials, Inc. |
Method of etching magnetic and ferroelectric materials using a pulsed bias source
|
US7311810B2
(en)
*
|
2003-04-18 |
2007-12-25 |
Applied Materials, Inc. |
Two position anneal chamber
|
US20040206628A1
(en)
*
|
2003-04-18 |
2004-10-21 |
Applied Materials, Inc. |
Electrical bias during wafer exit from electrolyte bath
|
JP4493284B2
(ja)
*
|
2003-05-26 |
2010-06-30 |
キヤノンアネルバ株式会社 |
スパッタリング装置
|
US7235160B2
(en)
*
|
2003-08-06 |
2007-06-26 |
Energy Photovoltaics, Inc. |
Hollow cathode sputtering apparatus and related method
|
US6995545B2
(en)
*
|
2003-08-18 |
2006-02-07 |
Mks Instruments, Inc. |
Control system for a sputtering system
|
US6967305B2
(en)
*
|
2003-08-18 |
2005-11-22 |
Mks Instruments, Inc. |
Control of plasma transitions in sputter processing systems
|
US20050092601A1
(en)
*
|
2003-10-29 |
2005-05-05 |
Harald Herchen |
Electrochemical plating cell having a diffusion member
|
US20050092602A1
(en)
*
|
2003-10-29 |
2005-05-05 |
Harald Herchen |
Electrochemical plating cell having a membrane stack
|
US9771648B2
(en)
*
|
2004-08-13 |
2017-09-26 |
Zond, Inc. |
Method of ionized physical vapor deposition sputter coating high aspect-ratio structures
|
US20050103620A1
(en)
*
|
2003-11-19 |
2005-05-19 |
Zond, Inc. |
Plasma source with segmented magnetron cathode
|
US9123508B2
(en)
*
|
2004-02-22 |
2015-09-01 |
Zond, Llc |
Apparatus and method for sputtering hard coatings
|
US20060066248A1
(en)
*
|
2004-09-24 |
2006-03-30 |
Zond, Inc. |
Apparatus for generating high current electrical discharges
|
US7095179B2
(en)
*
|
2004-02-22 |
2006-08-22 |
Zond, Inc. |
Methods and apparatus for generating strongly-ionized plasmas with ionizational instabilities
|
US20050218000A1
(en)
*
|
2004-04-06 |
2005-10-06 |
Applied Materials, Inc. |
Conditioning of contact leads for metal plating systems
|
US7285195B2
(en)
*
|
2004-06-24 |
2007-10-23 |
Applied Materials, Inc. |
Electric field reducing thrust plate
|
KR100632948B1
(ko)
*
|
2004-08-06 |
2006-10-11 |
삼성전자주식회사 |
칼코겐화합물 스퍼터링 형성 방법 및 이를 이용한 상변화 기억 소자 형성 방법
|
DE102004047135B4
(de)
*
|
2004-09-27 |
2011-08-18 |
VON ARDENNE Anlagentechnik GmbH, 01324 |
Temperfähiges Schichtsystem und Verfahren zu seiner Herstellung
|
US20060102467A1
(en)
*
|
2004-11-15 |
2006-05-18 |
Harald Herchen |
Current collimation for thin seed and direct plating
|
US20060118406A1
(en)
*
|
2004-12-08 |
2006-06-08 |
Energy Photovoltaics, Inc. |
Sputtered transparent conductive films
|
US20060175201A1
(en)
*
|
2005-02-07 |
2006-08-10 |
Hooman Hafezi |
Immersion process for electroplating applications
|
US7372610B2
(en)
|
2005-02-23 |
2008-05-13 |
Sage Electrochromics, Inc. |
Electrochromic devices and methods
|
US7305311B2
(en)
*
|
2005-04-22 |
2007-12-04 |
Advanced Energy Industries, Inc. |
Arc detection and handling in radio frequency power applications
|
US20060278524A1
(en)
*
|
2005-06-14 |
2006-12-14 |
Stowell Michael W |
System and method for modulating power signals to control sputtering
|
US20070014958A1
(en)
*
|
2005-07-08 |
2007-01-18 |
Chaplin Ernest R |
Hanger labels, label assemblies and methods for forming the same
|
KR101213849B1
(ko)
*
|
2005-12-16 |
2012-12-18 |
엘지디스플레이 주식회사 |
스퍼터링 장치
|
KR101150142B1
(ko)
*
|
2006-04-06 |
2012-06-11 |
어플라이드 머티어리얼스, 인코포레이티드 |
대형 기판 상에 아연 산화물 투명 전도성 산화물의 반응성 스퍼터링
|
US7445695B2
(en)
*
|
2006-04-28 |
2008-11-04 |
Advanced Energy Industries Inc. |
Method and system for conditioning a vapor deposition target
|
US7514935B2
(en)
*
|
2006-09-13 |
2009-04-07 |
Advanced Energy Industries, Inc. |
System and method for managing power supplied to a plasma chamber
|
US8500963B2
(en)
*
|
2006-10-26 |
2013-08-06 |
Applied Materials, Inc. |
Sputtering of thermally resistive materials including metal chalcogenides
|
US7777567B2
(en)
|
2007-01-25 |
2010-08-17 |
Mks Instruments, Inc. |
RF power amplifier stability network
|
US8217299B2
(en)
*
|
2007-02-22 |
2012-07-10 |
Advanced Energy Industries, Inc. |
Arc recovery without over-voltage for plasma chamber power supplies using a shunt switch
|
EP1995818A1
(de)
*
|
2007-05-12 |
2008-11-26 |
Huettinger Electronic Sp. z o. o |
Schaltung und Verfahren zur Reduzierung der in einer Zuleitungsinduktivität gespeicherten elektrischen Energie zur schnellen Plasmalichtbogenlöschung
|
JP4825742B2
(ja)
*
|
2007-06-26 |
2011-11-30 |
株式会社アルバック |
成膜装置
|
US8133359B2
(en)
*
|
2007-11-16 |
2012-03-13 |
Advanced Energy Industries, Inc. |
Methods and apparatus for sputtering deposition using direct current
|
US9039871B2
(en)
|
2007-11-16 |
2015-05-26 |
Advanced Energy Industries, Inc. |
Methods and apparatus for applying periodic voltage using direct current
|
ATE547804T1
(de)
*
|
2007-12-24 |
2012-03-15 |
Huettinger Electronic Sp Z O O |
Stromänderungsbegrenzungsvorrichtung
|
CN105441903B
(zh)
|
2008-02-25 |
2018-04-24 |
斯莫特克有限公司 |
纳米结构制造过程中的导电助层的沉积和选择性移除
|
US9613784B2
(en)
|
2008-07-17 |
2017-04-04 |
Mks Instruments, Inc. |
Sputtering system and method including an arc detection
|
US8044594B2
(en)
*
|
2008-07-31 |
2011-10-25 |
Advanced Energy Industries, Inc. |
Power supply ignition system and method
|
DE102008047198B4
(de)
*
|
2008-09-15 |
2012-11-22 |
Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. |
Verfahren und Vorrichtung zum Betreiben einer Hohlkathoden-Bogenentladung
|
US8395078B2
(en)
|
2008-12-05 |
2013-03-12 |
Advanced Energy Industries, Inc |
Arc recovery with over-voltage protection for plasma-chamber power supplies
|
EP2790205B1
(de)
*
|
2009-02-17 |
2018-04-04 |
Solvix GmbH |
Stromversorgungsvorrichtung zur Plasmabearbeitung
|
JP5674280B2
(ja)
*
|
2009-03-02 |
2015-02-25 |
東京エレクトロン株式会社 |
プラズマ処理装置
|
KR101037624B1
(ko)
*
|
2009-06-19 |
2011-05-30 |
(주)실리콘화일 |
메모리를 사용하지 않고 구현되는 이미지 회전 방법 및 장치
|
US8552665B2
(en)
|
2010-08-20 |
2013-10-08 |
Advanced Energy Industries, Inc. |
Proactive arc management of a plasma load
|
US10096725B2
(en)
*
|
2013-11-13 |
2018-10-09 |
Applied Materials, Inc. |
Method for graded anti-reflective coatings by physical vapor deposition
|
DE102014106377A1
(de)
*
|
2014-05-07 |
2015-11-12 |
Von Ardenne Gmbh |
Magnetron-Anordnung
|
US10227691B2
(en)
|
2015-12-21 |
2019-03-12 |
IonQuest LLC |
Magnetically enhanced low temperature-high density plasma-chemical vapor deposition plasma source for depositing diamond and diamond like films
|
US11359274B2
(en)
|
2015-12-21 |
2022-06-14 |
IonQuestCorp. |
Electrically and magnetically enhanced ionized physical vapor deposition unbalanced sputtering source
|
US11482404B2
(en)
|
2015-12-21 |
2022-10-25 |
Ionquest Corp. |
Electrically and magnetically enhanced ionized physical vapor deposition unbalanced sputtering source
|
US11823859B2
(en)
|
2016-09-09 |
2023-11-21 |
Ionquest Corp. |
Sputtering a layer on a substrate using a high-energy density plasma magnetron
|
US10957519B2
(en)
|
2015-12-21 |
2021-03-23 |
Ionquest Corp. |
Magnetically enhanced high density plasma-chemical vapor deposition plasma source for depositing diamond and diamond-like films
|
KR101995684B1
(ko)
*
|
2016-09-30 |
2019-07-02 |
가부시키가이샤 알박 |
전원 장치
|
CN110771022B
(zh)
*
|
2017-06-12 |
2023-05-02 |
星火工业有限公司 |
具有用于磁控溅射的脉冲和离子通量控制的脉冲功率模块
|
US10510575B2
(en)
|
2017-09-20 |
2019-12-17 |
Applied Materials, Inc. |
Substrate support with multiple embedded electrodes
|
CN108564584A
(zh)
*
|
2018-04-26 |
2018-09-21 |
宁波江丰电子材料股份有限公司 |
溅射靶材毛刺去除方法、装置及电子设备
|
US10555412B2
(en)
*
|
2018-05-10 |
2020-02-04 |
Applied Materials, Inc. |
Method of controlling ion energy distribution using a pulse generator with a current-return output stage
|
US11476145B2
(en)
|
2018-11-20 |
2022-10-18 |
Applied Materials, Inc. |
Automatic ESC bias compensation when using pulsed DC bias
|
WO2020154310A1
(en)
|
2019-01-22 |
2020-07-30 |
Applied Materials, Inc. |
Feedback loop for controlling a pulsed voltage waveform
|
US11508554B2
(en)
|
2019-01-24 |
2022-11-22 |
Applied Materials, Inc. |
High voltage filter assembly
|
CN112152452B
(zh)
|
2019-06-26 |
2022-02-08 |
台达电子工业股份有限公司 |
电源供应电路与操作方法
|
CN112187032B
(zh)
|
2019-07-04 |
2022-03-15 |
台达电子工业股份有限公司 |
电源供应装置及其操作方法
|
US20220056571A1
(en)
*
|
2019-11-28 |
2022-02-24 |
Ulvac, Inc. |
Film Forming Method
|
CN111455330A
(zh)
*
|
2020-05-20 |
2020-07-28 |
江苏东鋆光伏科技有限公司 |
利用直流反应溅射法制备三氧化二铝薄膜的方法
|
US11462389B2
(en)
|
2020-07-31 |
2022-10-04 |
Applied Materials, Inc. |
Pulsed-voltage hardware assembly for use in a plasma processing system
|
CN114134466B
(zh)
*
|
2020-09-04 |
2023-06-30 |
长鑫存储技术有限公司 |
用于物理气相沉积工艺的靶材初始处理方法与控制器
|
US11901157B2
(en)
|
2020-11-16 |
2024-02-13 |
Applied Materials, Inc. |
Apparatus and methods for controlling ion energy distribution
|
US11798790B2
(en)
|
2020-11-16 |
2023-10-24 |
Applied Materials, Inc. |
Apparatus and methods for controlling ion energy distribution
|
US11495470B1
(en)
|
2021-04-16 |
2022-11-08 |
Applied Materials, Inc. |
Method of enhancing etching selectivity using a pulsed plasma
|
US11791138B2
(en)
|
2021-05-12 |
2023-10-17 |
Applied Materials, Inc. |
Automatic electrostatic chuck bias compensation during plasma processing
|
US11948780B2
(en)
|
2021-05-12 |
2024-04-02 |
Applied Materials, Inc. |
Automatic electrostatic chuck bias compensation during plasma processing
|
US11967483B2
(en)
|
2021-06-02 |
2024-04-23 |
Applied Materials, Inc. |
Plasma excitation with ion energy control
|
US20220399185A1
(en)
|
2021-06-09 |
2022-12-15 |
Applied Materials, Inc. |
Plasma chamber and chamber component cleaning methods
|
US11810760B2
(en)
|
2021-06-16 |
2023-11-07 |
Applied Materials, Inc. |
Apparatus and method of ion current compensation
|
US11569066B2
(en)
|
2021-06-23 |
2023-01-31 |
Applied Materials, Inc. |
Pulsed voltage source for plasma processing applications
|
US11776788B2
(en)
|
2021-06-28 |
2023-10-03 |
Applied Materials, Inc. |
Pulsed voltage boost for substrate processing
|
US11476090B1
(en)
|
2021-08-24 |
2022-10-18 |
Applied Materials, Inc. |
Voltage pulse time-domain multiplexing
|
US12106938B2
(en)
|
2021-09-14 |
2024-10-01 |
Applied Materials, Inc. |
Distortion current mitigation in a radio frequency plasma processing chamber
|
US11694876B2
(en)
|
2021-12-08 |
2023-07-04 |
Applied Materials, Inc. |
Apparatus and method for delivering a plurality of waveform signals during plasma processing
|
US11972924B2
(en)
|
2022-06-08 |
2024-04-30 |
Applied Materials, Inc. |
Pulsed voltage source for plasma processing applications
|
US12111341B2
(en)
|
2022-10-05 |
2024-10-08 |
Applied Materials, Inc. |
In-situ electric field detection method and apparatus
|