ATE468420T1 - Stromversorgungseinheit für sputtervorrichtung - Google Patents

Stromversorgungseinheit für sputtervorrichtung

Info

Publication number
ATE468420T1
ATE468420T1 AT98904391T AT98904391T ATE468420T1 AT E468420 T1 ATE468420 T1 AT E468420T1 AT 98904391 T AT98904391 T AT 98904391T AT 98904391 T AT98904391 T AT 98904391T AT E468420 T1 ATE468420 T1 AT E468420T1
Authority
AT
Austria
Prior art keywords
arc discharge
reverse voltage
power supply
supply unit
sputter device
Prior art date
Application number
AT98904391T
Other languages
English (en)
Inventor
Noboru Kuriyama
Yutaka Yatsu
Yoshio Kawamata
Takashi Fujii
Original Assignee
Shibaura Mechatronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shibaura Mechatronics Corp filed Critical Shibaura Mechatronics Corp
Application granted granted Critical
Publication of ATE468420T1 publication Critical patent/ATE468420T1/de

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411Constructional aspects of the reactor
    • H01J37/3444Associated circuits
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54Controlling or regulating the coating process
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02Details
    • H01J2237/0203Protection arrangements
    • H01J2237/0206Extinguishing, preventing or controlling unwanted discharges

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Disintegrating Or Milling (AREA)
  • Acyclic And Carbocyclic Compounds In Medicinal Compositions (AREA)
  • Dc-Dc Converters (AREA)
AT98904391T 1997-02-20 1998-02-19 Stromversorgungseinheit für sputtervorrichtung ATE468420T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP3624897 1997-02-20
PCT/JP1998/000693 WO1998037257A1 (fr) 1997-02-20 1998-02-19 Bloc d'alimentation pour dispositif de pulverisation cathodique

Publications (1)

Publication Number Publication Date
ATE468420T1 true ATE468420T1 (de) 2010-06-15

Family

ID=12464484

Family Applications (1)

Application Number Title Priority Date Filing Date
AT98904391T ATE468420T1 (de) 1997-02-20 1998-02-19 Stromversorgungseinheit für sputtervorrichtung

Country Status (8)

Country Link
US (1) US6416638B1 (de)
EP (1) EP1013792B1 (de)
KR (1) KR100314883B1 (de)
CN (1) CN1203208C (de)
AT (1) ATE468420T1 (de)
DE (1) DE69841671D1 (de)
TW (1) TW376555B (de)
WO (1) WO1998037257A1 (de)

Families Citing this family (33)

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DE19937859C2 (de) 1999-08-13 2003-06-18 Huettinger Elektronik Gmbh Elektrische Versorgungseinheit für Plasmaanlagen
CN1559103B (zh) * 2001-09-28 2011-07-06 芝浦机械电子株式会社 溅射电源单元
WO2003103348A1 (ja) * 2002-05-31 2003-12-11 芝浦メカトロニクス株式会社 放電用電源、スパッタリング用電源及びスパッタリング装置
US6967305B2 (en) * 2003-08-18 2005-11-22 Mks Instruments, Inc. Control of plasma transitions in sputter processing systems
DE102004015090A1 (de) * 2004-03-25 2005-11-03 Hüttinger Elektronik Gmbh + Co. Kg Bogenentladungserkennungseinrichtung
US7305311B2 (en) * 2005-04-22 2007-12-04 Advanced Energy Industries, Inc. Arc detection and handling in radio frequency power applications
US20060283702A1 (en) * 2005-06-21 2006-12-21 Applied Materials, Inc. Random pulsed DC power supply
US20070048451A1 (en) * 2005-08-26 2007-03-01 Applied Materials, Inc. Substrate movement and process chamber scheduling
US7432184B2 (en) * 2005-08-26 2008-10-07 Applied Materials, Inc. Integrated PVD system using designated PVD chambers
ATE421791T1 (de) * 2005-12-22 2009-02-15 Huettinger Elektronik Gmbh Verfahren und vorrichtung zur arcerkennung in einem plasmaprozess
DE502006005363D1 (de) * 2006-11-23 2009-12-24 Huettinger Elektronik Gmbh Verfahren zum Erkennen einer Bogenentladung in einem Plasmaprozess und Bogenentladungserkennungsvorrichtung
US7795817B2 (en) * 2006-11-24 2010-09-14 Huettinger Elektronik Gmbh + Co. Kg Controlled plasma power supply
EP1928009B1 (de) * 2006-11-28 2013-04-10 HÜTTINGER Elektronik GmbH + Co. KG Bogenentladungs-Erkennungseinrichtung, Plasma-Leistungsversorgung und Verfahren zum Erkennen von Bogenentladungen
EP1933362B1 (de) * 2006-12-14 2011-04-13 HÜTTINGER Elektronik GmbH + Co. KG Bogenentladungs-Erkennungseinrichtung, Plasma-Leistungsversorgung und Verfahren zum Erkennen von Bogenentladungen
US8217299B2 (en) * 2007-02-22 2012-07-10 Advanced Energy Industries, Inc. Arc recovery without over-voltage for plasma chamber power supplies using a shunt switch
DE102007011230A1 (de) * 2007-03-06 2008-09-11 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Magnetronplasmaanlage
ATE493749T1 (de) 2007-03-08 2011-01-15 Huettinger Elektronik Gmbh Verfahren und vorrichtung zum unterdrücken von bogenentladungen beim betreiben eines plasmaprozesses
EP1995818A1 (de) 2007-05-12 2008-11-26 Huettinger Electronic Sp. z o. o Schaltung und Verfahren zur Reduzierung der in einer Zuleitungsinduktivität gespeicherten elektrischen Energie zur schnellen Plasmalichtbogenlöschung
EP2075823B1 (de) * 2007-12-24 2012-02-29 Huettinger Electronic Sp. z o. o Stromänderungsbegrenzungsvorrichtung
US9613784B2 (en) * 2008-07-17 2017-04-04 Mks Instruments, Inc. Sputtering system and method including an arc detection
US8044594B2 (en) * 2008-07-31 2011-10-25 Advanced Energy Industries, Inc. Power supply ignition system and method
WO2010063027A2 (en) * 2008-11-28 2010-06-03 General Plasma, Inc. Bipolar rectifier power supply
US8395078B2 (en) * 2008-12-05 2013-03-12 Advanced Energy Industries, Inc Arc recovery with over-voltage protection for plasma-chamber power supplies
PL2648209T3 (pl) 2009-02-17 2018-06-29 Solvix Gmbh Urządzenie zasilające do obróbki plazmowej
DE102010031568B4 (de) 2010-07-20 2014-12-11 TRUMPF Hüttinger GmbH + Co. KG Arclöschanordnung und Verfahren zum Löschen von Arcs
KR101421483B1 (ko) * 2010-08-18 2014-07-22 가부시키가이샤 알박 직류 전원 장치
US8552665B2 (en) 2010-08-20 2013-10-08 Advanced Energy Industries, Inc. Proactive arc management of a plasma load
WO2015035373A1 (en) * 2013-09-09 2015-03-12 Itn Energy Systems, Inc. Modulation of reverse voltage limited wa veforms in sputtering deposition chambers
US10483089B2 (en) 2014-02-28 2019-11-19 Eagle Harbor Technologies, Inc. High voltage resistive output stage circuit
WO2018061932A1 (ja) * 2016-09-30 2018-04-05 株式会社アルバック 電源装置
US11302518B2 (en) 2018-07-27 2022-04-12 Eagle Harbor Technologies, Inc. Efficient energy recovery in a nanosecond pulser circuit
TWI783203B (zh) * 2019-01-08 2022-11-11 美商鷹港科技股份有限公司 奈秒脈波產生器電路
US20230130106A1 (en) * 2021-10-27 2023-04-27 Applied Materials, Inc. Methods and apparatus for processing a substrate

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4201645A (en) * 1978-06-26 1980-05-06 Robert J. Ferran Closed-loop sputtering system and method of operating same
JPH02194831A (ja) 1989-01-23 1990-08-01 Ishikawajima Harima Heavy Ind Co Ltd 直流放電用電源
US5241152A (en) * 1990-03-23 1993-08-31 Anderson Glen L Circuit for detecting and diverting an electrical arc in a glow discharge apparatus
DE9109503U1 (de) * 1991-07-31 1991-10-17 Magtron Magneto Elektronische Geraete Gmbh, 7583 Ottersweier Schaltungsanordnung für ein Stromversorgungsgerät für Geräte und Anlagen der Plasma- und Oberflächentechnik
DE4202425C2 (de) * 1992-01-29 1997-07-17 Leybold Ag Verfahren und Vorrichtung zum Beschichten eines Substrats, insbesondere mit elektrisch nichtleitenden Schichten
JPH05311418A (ja) 1992-05-12 1993-11-22 Shibaura Eng Works Co Ltd アーク放電防止回路
US5427669A (en) * 1992-12-30 1995-06-27 Advanced Energy Industries, Inc. Thin film DC plasma processing system
US5718813A (en) 1992-12-30 1998-02-17 Advanced Energy Industries, Inc. Enhanced reactive DC sputtering system
SG74667A1 (en) * 1993-07-28 2000-08-22 Asahi Glass Co Ltd Method of an apparatus for sputtering
JP3191135B2 (ja) * 1994-02-23 2001-07-23 日本電子工業株式会社 直流グロー放電処理装置におけるアーク遮断方法及び装置
US5651865A (en) * 1994-06-17 1997-07-29 Eni Preferential sputtering of insulators from conductive targets
US5584972A (en) * 1995-02-01 1996-12-17 Sony Corporation Plasma noise and arcing suppressor apparatus and method for sputter deposition
US5576939A (en) 1995-05-05 1996-11-19 Drummond; Geoffrey N. Enhanced thin film DC plasma power supply
US5584974A (en) 1995-10-20 1996-12-17 Eni Arc control and switching element protection for pulsed dc cathode sputtering power supply
US5682067A (en) * 1996-06-21 1997-10-28 Sierra Applied Sciences, Inc. Circuit for reversing polarity on electrodes
JP2835323B2 (ja) 1997-02-20 1998-12-14 芝浦メカトロニクス株式会社 スパッタリング装置用電源装置

Also Published As

Publication number Publication date
KR100314883B1 (ko) 2001-11-23
WO1998037257A1 (fr) 1998-08-27
EP1013792B1 (de) 2010-05-19
CN1248299A (zh) 2000-03-22
EP1013792A1 (de) 2000-06-28
EP1013792A4 (de) 2006-02-15
TW376555B (en) 1999-12-11
US6416638B1 (en) 2002-07-09
CN1203208C (zh) 2005-05-25
KR20000071147A (ko) 2000-11-25
DE69841671D1 (de) 2010-07-01

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