DE69506184D1 - Thermisch und optisch isolierte oberflächenemittierende Laserdioden - Google Patents

Thermisch und optisch isolierte oberflächenemittierende Laserdioden

Info

Publication number
DE69506184D1
DE69506184D1 DE69506184T DE69506184T DE69506184D1 DE 69506184 D1 DE69506184 D1 DE 69506184D1 DE 69506184 T DE69506184 T DE 69506184T DE 69506184 T DE69506184 T DE 69506184T DE 69506184 D1 DE69506184 D1 DE 69506184D1
Authority
DE
Germany
Prior art keywords
thermally
emitting laser
surface emitting
laser diodes
insulated surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69506184T
Other languages
English (en)
Other versions
DE69506184T2 (de
Inventor
Shih-Yuan Wang
Michael R T Tan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Avago Technologies International Sales Pte Ltd
Original Assignee
Hewlett Packard Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Co filed Critical Hewlett Packard Co
Publication of DE69506184D1 publication Critical patent/DE69506184D1/de
Application granted granted Critical
Publication of DE69506184T2 publication Critical patent/DE69506184T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H01S5/423—Arrays of surface emitting lasers having a vertical cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02461—Structure or details of the laser chip to manipulate the heat flow, e.g. passive layers in the chip with a low heat conductivity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H01S2301/176—Specific passivation layers on surfaces other than the emission facet
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18344—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] characterized by the mesa, e.g. dimensions or shape of the mesa
    • H01S5/18347—Mesa comprising active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2081—Methods of obtaining the confinement using special etching techniques

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE69506184T 1994-07-07 1995-06-07 Thermisch und optisch isolierte oberflächenemittierende Laserdioden Expired - Fee Related DE69506184T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/271,606 US5729563A (en) 1994-07-07 1994-07-07 Method and apparatus for optically and thermally isolating surface emitting laser diodes

Publications (2)

Publication Number Publication Date
DE69506184D1 true DE69506184D1 (de) 1999-01-07
DE69506184T2 DE69506184T2 (de) 1999-04-15

Family

ID=23036289

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69506184T Expired - Fee Related DE69506184T2 (de) 1994-07-07 1995-06-07 Thermisch und optisch isolierte oberflächenemittierende Laserdioden

Country Status (4)

Country Link
US (1) US5729563A (de)
EP (1) EP0691717B1 (de)
JP (1) JP3787376B2 (de)
DE (1) DE69506184T2 (de)

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US6052399A (en) * 1997-08-29 2000-04-18 Xerox Corporation Independently addressable laser array with native oxide for optical confinement and electrical isolation
DE69834925T2 (de) * 1997-10-10 2006-10-05 Cymer, Inc., San Diego Pulsenergiesteuerung für excimer-laser
US6069908A (en) * 1998-02-09 2000-05-30 Hewlwtt-Packard Company N-drive or P-drive VCSEL array
US6117699A (en) * 1998-04-10 2000-09-12 Hewlett-Packard Company Monolithic multiple wavelength VCSEL array
CA2374944A1 (en) * 1999-06-10 2000-12-21 Nigel Hacker Spin-on-glass anti-reflective coatings for photolithography
US6268457B1 (en) 1999-06-10 2001-07-31 Allied Signal, Inc. Spin-on glass anti-reflective coatings for photolithography
US6251791B1 (en) * 1999-07-20 2001-06-26 United Microelectronics Corp. Eliminating etching microloading effect by in situ deposition and etching
US6351481B1 (en) * 1999-10-06 2002-02-26 Opto Power Corp Diode laser with screening window and method of fabrication
US6879427B2 (en) 2000-04-10 2005-04-12 Lenslet Ltd. Shear inducing beamsplitter for interferometric image processing
US6936900B1 (en) 2000-05-04 2005-08-30 Osemi, Inc. Integrated transistor devices
US6368400B1 (en) 2000-07-17 2002-04-09 Honeywell International Absorbing compounds for spin-on-glass anti-reflective coatings for photolithography
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US6573528B2 (en) * 2000-10-12 2003-06-03 Walter David Braddock Detector diode with internal calibration structure
US6753214B1 (en) * 2001-02-16 2004-06-22 Optical Communication Products, Inc. Photodetector with isolation implant region for reduced device capacitance and increased bandwidth
GB2377318A (en) * 2001-07-03 2003-01-08 Mitel Semiconductor Ab Vertical Cavity Surface Emitting Laser
ATE414911T1 (de) * 2001-08-13 2008-12-15 Finisar Corp Verfahren zur durchführung des einbrennens elektronischer vorrichtungen auf nicht vereinzelte halbleiterscheiben
JP2003282939A (ja) * 2002-03-26 2003-10-03 Oki Degital Imaging:Kk 半導体発光装置及びその製造方法
US6989556B2 (en) * 2002-06-06 2006-01-24 Osemi, Inc. Metal oxide compound semiconductor integrated transistor devices with a gate insulator structure
US7187045B2 (en) * 2002-07-16 2007-03-06 Osemi, Inc. Junction field effect metal oxide compound semiconductor integrated transistor devices
TW565975B (en) * 2002-12-27 2003-12-11 Ind Tech Res Inst Oxide confined type vertical cavity surface emitting laser device and the manufacturing method thereof
US20070138506A1 (en) * 2003-11-17 2007-06-21 Braddock Walter D Nitride metal oxide semiconductor integrated transistor devices
US8053159B2 (en) 2003-11-18 2011-11-08 Honeywell International Inc. Antireflective coatings for via fill and photolithography applications and methods of preparation thereof
WO2005061756A1 (en) * 2003-12-09 2005-07-07 Osemi, Inc. High temperature vacuum evaporation apparatus
US7372886B2 (en) * 2004-06-07 2008-05-13 Avago Technologies Fiber Ip Pte Ltd High thermal conductivity vertical cavity surface emitting laser (VCSEL)
JP2006245132A (ja) * 2005-03-01 2006-09-14 Sumitomo Electric Ind Ltd 半導体光素子および半導体光素子を作製する方法
US7247885B2 (en) * 2005-05-26 2007-07-24 Avago Technologies General Ip (Singapore) Ltd. Pte. Carrier confinement in light-emitting group IV semiconductor devices
JP4892940B2 (ja) * 2005-11-29 2012-03-07 富士ゼロックス株式会社 面発光型半導体レーザ装置およびその製造方法
JP2007294744A (ja) * 2006-04-26 2007-11-08 Ricoh Co Ltd 面発光レーザアレイ、光走査装置及び画像形成装置
US8642246B2 (en) 2007-02-26 2014-02-04 Honeywell International Inc. Compositions, coatings and films for tri-layer patterning applications and methods of preparation thereof
JP5177358B2 (ja) * 2007-06-15 2013-04-03 株式会社リコー 面発光レーザアレイ、光走査装置、画像形成装置、光伝送モジュール及び光伝送システム
TWM363080U (en) * 2009-01-21 2009-08-11 Pixart Imaging Inc Packaging structure
US8557877B2 (en) 2009-06-10 2013-10-15 Honeywell International Inc. Anti-reflective coatings for optically transparent substrates
SE534346C2 (sv) * 2009-12-04 2011-07-19 Ekklippan Ab Integrerat chip innefattande dike
US8864898B2 (en) 2011-05-31 2014-10-21 Honeywell International Inc. Coating formulations for optical elements
US8644712B2 (en) 2011-06-23 2014-02-04 Avago Technologies General Ip (Singapore) Pte. Ltd. Opto-electronic transceiver module with housing having thermally conductive protrusion
JP2014007335A (ja) * 2012-06-26 2014-01-16 Hamamatsu Photonics Kk 半導体発光素子
US9236945B2 (en) 2012-12-07 2016-01-12 Applied Optoelectronics, Inc. Thermally shielded multi-channel transmitter optical subassembly and optical transceiver module including same
US9306671B2 (en) 2012-12-07 2016-04-05 Applied Optoelectronics, Inc. Thermally isolated multi-channel transmitter optical subassembly and optical transceiver module including same
WO2016191359A1 (en) 2015-05-22 2016-12-01 Applied Optoelectronics, Inc. Coaxial transmitter optical subassembly (tosa) with cuboid type to laser package and optical transceiver including same
US9614620B2 (en) 2013-02-06 2017-04-04 Applied Optoelectronics, Inc. Coaxial transmitter optical subassembly (TOSA) with cuboid type to laser package and optical transceiver including same
CN105340204B (zh) * 2013-02-06 2018-03-13 祥茂光电科技股份有限公司 具有热屏蔽功能的多信道光发射次模块以及包含该模块的光收发器模组
WO2016167892A1 (en) 2015-04-13 2016-10-20 Honeywell International Inc. Polysiloxane formulations and coatings for optoelectronic applications
US9876576B2 (en) 2016-03-17 2018-01-23 Applied Optoelectronics, Inc. Layered coaxial transmitter optical subassemblies with support bridge therebetween
US12074408B2 (en) * 2019-10-01 2024-08-27 Meta Platforms Technologies, Llc Vertical cavity surface-emitting laser (VCSEL) with a light barrier

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JPS6189691A (ja) * 1984-10-09 1986-05-07 Fujitsu Ltd 半導体発光装置
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US5216263A (en) * 1990-11-29 1993-06-01 Xerox Corporation High density, independently addressable, surface emitting semiconductor laser-light emitting diode arrays
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US5258990A (en) * 1991-11-07 1993-11-02 The United States Of America As Represented By The Secretary Of The United States Department Of Energy Visible light surface emitting semiconductor laser
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Also Published As

Publication number Publication date
JPH0832178A (ja) 1996-02-02
EP0691717B1 (de) 1998-11-25
JP3787376B2 (ja) 2006-06-21
EP0691717A1 (de) 1996-01-10
US5729563A (en) 1998-03-17
DE69506184T2 (de) 1999-04-15

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: AGILENT TECHNOLOGIES, INC. (N.D.GES.D.STAATES DELA

8327 Change in the person/name/address of the patent owner

Owner name: AVAGO TECHNOLOGIES FIBER IP (SINGAPORE) PTE. LTD.,

8339 Ceased/non-payment of the annual fee