DE69432662D1 - Schutzapparat für einen seriell-geschaltenen MOSFET - Google Patents

Schutzapparat für einen seriell-geschaltenen MOSFET

Info

Publication number
DE69432662D1
DE69432662D1 DE69432662T DE69432662T DE69432662D1 DE 69432662 D1 DE69432662 D1 DE 69432662D1 DE 69432662 T DE69432662 T DE 69432662T DE 69432662 T DE69432662 T DE 69432662T DE 69432662 D1 DE69432662 D1 DE 69432662D1
Authority
DE
Germany
Prior art keywords
transistor
pass
mos
series
protection device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69432662T
Other languages
English (en)
Other versions
DE69432662T2 (de
Inventor
Wolfgang Krautschneider
Michael Killian
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qimonda AG
Original Assignee
Infineon Technologies AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG
Publication of DE69432662D1 publication Critical patent/DE69432662D1/de
Application granted granted Critical
Publication of DE69432662T2 publication Critical patent/DE69432662T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/08122—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Emergency Protection Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Amplifiers (AREA)
DE69432662T 1994-02-03 1994-02-03 Schutzapparat für einen seriell-geschaltenen MOSFET Expired - Lifetime DE69432662T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP94101661A EP0666596B1 (de) 1994-02-03 1994-02-03 Schutzapparat für einen seriell-geschaltenen MOSFET

Publications (2)

Publication Number Publication Date
DE69432662D1 true DE69432662D1 (de) 2003-06-18
DE69432662T2 DE69432662T2 (de) 2004-03-25

Family

ID=8215651

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69432662T Expired - Lifetime DE69432662T2 (de) 1994-02-03 1994-02-03 Schutzapparat für einen seriell-geschaltenen MOSFET

Country Status (3)

Country Link
EP (1) EP0666596B1 (de)
AT (1) ATE240587T1 (de)
DE (1) DE69432662T2 (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11145307A (ja) * 1997-11-07 1999-05-28 Fujitsu Ltd 半導体集積回路装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3395290A (en) * 1965-10-08 1968-07-30 Gen Micro Electronics Inc Protective circuit for insulated gate metal oxide semiconductor fieldeffect device
US3947727A (en) * 1974-12-10 1976-03-30 Rca Corporation Protection circuit for insulated-gate field-effect transistors
JPS5530312B2 (de) * 1975-01-16 1980-08-09
JPS61276249A (ja) * 1985-05-30 1986-12-06 Toshiba Corp 入力保護回路
JPS63303514A (ja) * 1987-06-03 1988-12-12 Nec Corp ＧａＡｓ半導体集積回路
US4930037A (en) * 1989-02-16 1990-05-29 Advaced Micro Devices, Inc. Input voltage protection system

Also Published As

Publication number Publication date
EP0666596B1 (de) 2003-05-14
DE69432662T2 (de) 2004-03-25
EP0666596A1 (de) 1995-08-09
ATE240587T1 (de) 2003-05-15

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: QIMONDA AG, 81739 MUENCHEN, DE