DE69425474T2 - LC-Element, Halbleiteranordnung, und Verfahren zur Herstellung des LC-Elements - Google Patents
LC-Element, Halbleiteranordnung, und Verfahren zur Herstellung des LC-ElementsInfo
- Publication number
- DE69425474T2 DE69425474T2 DE69425474T DE69425474T DE69425474T2 DE 69425474 T2 DE69425474 T2 DE 69425474T2 DE 69425474 T DE69425474 T DE 69425474T DE 69425474 T DE69425474 T DE 69425474T DE 69425474 T2 DE69425474 T2 DE 69425474T2
- Authority
- DE
- Germany
- Prior art keywords
- electrode
- channel
- semiconductor substrate
- element according
- electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 86
- 238000004519 manufacturing process Methods 0.000 title claims description 53
- 239000000758 substrate Substances 0.000 claims description 127
- 239000003990 capacitor Substances 0.000 claims description 57
- 230000008054 signal transmission Effects 0.000 claims description 33
- 238000009792 diffusion process Methods 0.000 claims description 30
- 239000000872 buffer Substances 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 12
- 230000008569 process Effects 0.000 claims description 11
- 239000002019 doping agent Substances 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 7
- 229910000679 solder Inorganic materials 0.000 claims description 7
- 239000002800 charge carrier Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 60
- 238000010276 construction Methods 0.000 description 22
- 230000004044 response Effects 0.000 description 19
- 230000008901 benefit Effects 0.000 description 17
- 238000012545 processing Methods 0.000 description 16
- 239000004020 conductor Substances 0.000 description 13
- 238000005516 engineering process Methods 0.000 description 13
- 230000015572 biosynthetic process Effects 0.000 description 12
- 230000002829 reductive effect Effects 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 238000005549 size reduction Methods 0.000 description 7
- 238000000151 deposition Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 238000009413 insulation Methods 0.000 description 6
- 239000000969 carrier Substances 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 239000007791 liquid phase Substances 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 230000003321 amplification Effects 0.000 description 3
- 230000002238 attenuated effect Effects 0.000 description 3
- 230000006378 damage Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 238000003199 nucleic acid amplification method Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Engineering & Computer Science (AREA)
- Semiconductor Integrated Circuits (AREA)
- Coils Or Transformers For Communication (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30595493A JP3390065B2 (ja) | 1993-11-10 | 1993-11-10 | Ｌｃ素子，半導体装置及びｌｃ素子の製造方法 |
| JP32314993A JP3390070B2 (ja) | 1993-11-29 | 1993-11-29 | Ｌｃ素子，半導体装置及びｌｃ素子の製造方法 |
| JP35381093A JP3497221B2 (ja) | 1993-12-28 | 1993-12-28 | Ｌｃ素子，半導体装置及びｌｃ素子の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69425474D1 DE69425474D1 (de) | 2000-09-14 |
| DE69425474T2 true DE69425474T2 (de) | 2001-04-19 |
Family
ID=27338801
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69425474T Expired - Fee Related DE69425474T2 (de) | 1993-11-10 | 1994-11-04 | LC-Element, Halbleiteranordnung, und Verfahren zur Herstellung des LC-Elements |
Country Status (2)
| Country | Link |
|---|---|
| KR (1) | KR100334004B1 (ko) |
| DE (1) | DE69425474T2 (ko) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101674909B1 (ko) * | 2015-08-26 | 2016-11-10 | 동국대학교 산학협력단 | 커먼 센트로이드 레이아웃 기법, 커먼 센트로이드 레이아웃 기법을 이용한 디지털-아날로그 컨버터 및 아날로그-디지털 컨버터 |
-
1994
- 1994-11-04 DE DE69425474T patent/DE69425474T2/de not_active Expired - Fee Related
- 1994-11-07 KR KR1019940029043A patent/KR100334004B1/ko not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR100334004B1 (ko) | 2002-11-11 |
| KR950015758A (ko) | 1995-06-17 |
| DE69425474D1 (de) | 2000-09-14 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8328 | Change in the person/name/address of the agent |
Representative=s name: KRAMER - BARSKE - SCHMIDTCHEN, 81245 MUENCHEN |
|
| 8327 | Change in the person/name/address of the patent owner |
Owner name: NIIGATA SEIMITSU CO., LTD., JOUETSU, NIIGATA, JP |
|
| 8381 | Inventor (new situation) |
Inventor name: IKEDA, TAKESHI, TOKIO/TOKYO, JP Inventor name: OKAMURA, SUSMU, TOKIO/TOKYO, JP |
|
| 8327 | Change in the person/name/address of the patent owner |
Owner name: NIIGATA SEIMITSU CO., LTD., JOETSU, NIIGATA, JP |
|
| 8339 | Ceased/non-payment of the annual fee |