DE69422673T2 - Eine geänderte Heizstrahlungsquelle mit isolierten optischen Zonen - Google Patents

Eine geänderte Heizstrahlungsquelle mit isolierten optischen Zonen

Info

Publication number
DE69422673T2
DE69422673T2 DE69422673T DE69422673T DE69422673T2 DE 69422673 T2 DE69422673 T2 DE 69422673T2 DE 69422673 T DE69422673 T DE 69422673T DE 69422673 T DE69422673 T DE 69422673T DE 69422673 T2 DE69422673 T2 DE 69422673T2
Authority
DE
Germany
Prior art keywords
light sources
screen
lamp heater
ring region
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69422673T
Other languages
German (de)
English (en)
Other versions
DE69422673D1 (de
Inventor
Cecil J. Davis
Steve Show-Wu Huang
Robert T. Matthews
Habib N. Najm
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of DE69422673D1 publication Critical patent/DE69422673D1/de
Application granted granted Critical
Publication of DE69422673T2 publication Critical patent/DE69422673T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H10P72/0436—
DE69422673T 1993-03-29 1994-03-22 Eine geänderte Heizstrahlungsquelle mit isolierten optischen Zonen Expired - Fee Related DE69422673T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/039,720 US5345534A (en) 1993-03-29 1993-03-29 Semiconductor wafer heater with infrared lamp module with light blocking means

Publications (2)

Publication Number Publication Date
DE69422673D1 DE69422673D1 (de) 2000-02-24
DE69422673T2 true DE69422673T2 (de) 2000-08-10

Family

ID=21907024

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69422673T Expired - Fee Related DE69422673T2 (de) 1993-03-29 1994-03-22 Eine geänderte Heizstrahlungsquelle mit isolierten optischen Zonen

Country Status (6)

Country Link
US (1) US5345534A (enExample)
EP (1) EP0641016B1 (enExample)
JP (1) JPH07130678A (enExample)
KR (1) KR940023316A (enExample)
DE (1) DE69422673T2 (enExample)
TW (1) TW267250B (enExample)

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USRE37504E1 (en) 1992-12-03 2002-01-08 Lasersight Technologies, Inc. Ophthalmic surgery method using non-contact scanning laser
US6716210B2 (en) 1992-12-03 2004-04-06 Lasersight Technologies, Inc. Refractive surgical laser apparatus and method
TW315493B (en) * 1996-02-28 1997-09-11 Tokyo Electron Co Ltd Heating apparatus and heat treatment apparatus
US6072160A (en) * 1996-06-03 2000-06-06 Applied Materials, Inc. Method and apparatus for enhancing the efficiency of radiant energy sources used in rapid thermal processing of substrates by energy reflection
JP3504436B2 (ja) * 1996-06-10 2004-03-08 大日本スクリーン製造株式会社 基板の枚葉式熱処理装置
US5997529A (en) * 1996-10-28 1999-12-07 Lasersight Technologies, Inc. Compound astigmatic myopia or hyperopia correction by laser ablation
US6210169B1 (en) 1997-01-31 2001-04-03 Lasersight Technologies, Inc. Device and method for simulating ophthalmic surgery
FI101138B (fi) * 1997-02-06 1998-04-30 Softeco Oy Sovitelma tuulilasin välikalvon muotoilulaitteistossa
US5960158A (en) 1997-07-11 1999-09-28 Ag Associates Apparatus and method for filtering light in a thermal processing chamber
US6007202A (en) 1997-10-23 1999-12-28 Lasersight Technologies, Inc. Eye illumination system and method
US6132424A (en) * 1998-03-13 2000-10-17 Lasersight Technologies Inc. Smooth and uniform laser ablation apparatus and method
US6409718B1 (en) 1998-02-03 2002-06-25 Lasersight Technologies, Inc. Device and method for correcting astigmatism by laser ablation
US5970214A (en) 1998-05-14 1999-10-19 Ag Associates Heating device for semiconductor wafers
US5930456A (en) 1998-05-14 1999-07-27 Ag Associates Heating device for semiconductor wafers
US6127658A (en) * 1998-08-04 2000-10-03 Steag C.V.D. Systems, Ltd. Wafer heating apparatus and method with radiation absorptive peripheral barrier blocking stray radiation
US6210484B1 (en) 1998-09-09 2001-04-03 Steag Rtp Systems, Inc. Heating device containing a multi-lamp cone for heating semiconductor wafers
US6108491A (en) * 1998-10-30 2000-08-22 Applied Materials, Inc. Dual surface reflector
US6771895B2 (en) * 1999-01-06 2004-08-03 Mattson Technology, Inc. Heating device for heating semiconductor wafers in thermal processing chambers
US6122440A (en) * 1999-01-27 2000-09-19 Regents Of The University Of Minnesota Optical heating device for rapid thermal processing (RTP) system
US6497701B2 (en) 1999-04-30 2002-12-24 Visx, Incorporated Method and system for ablating surfaces with partially overlapping craters having consistent curvature
US6301435B1 (en) 1999-05-21 2001-10-09 Kabushiki Kaisha Toshiba Heating method
US6666924B1 (en) 2000-03-28 2003-12-23 Asm America Reaction chamber with decreased wall deposition
US6376804B1 (en) 2000-06-16 2002-04-23 Applied Materials, Inc. Semiconductor processing system with lamp cooling
US6562141B2 (en) * 2000-07-03 2003-05-13 Andrew Peter Clarke Dual degas/cool loadlock cluster tool
US6476362B1 (en) 2000-09-12 2002-11-05 Applied Materials, Inc. Lamp array for thermal processing chamber
JP4581238B2 (ja) * 2000-12-12 2010-11-17 株式会社デンソー 炭化珪素半導体製造装置およびそれを用いた炭化珪素半導体製造方法
US7015422B2 (en) 2000-12-21 2006-03-21 Mattson Technology, Inc. System and process for heating semiconductor wafers by optimizing absorption of electromagnetic energy
US6970644B2 (en) * 2000-12-21 2005-11-29 Mattson Technology, Inc. Heating configuration for use in thermal processing chambers
JP4587251B2 (ja) * 2001-02-21 2010-11-24 株式会社半導体エネルギー研究所 熱処理装置
US6744017B2 (en) 2002-05-29 2004-06-01 Ibis Technology Corporation Wafer heating devices for use in ion implantation systems
KR100377011B1 (ko) * 2002-11-01 2003-03-19 코닉 시스템 주식회사 급속 열처리 장치의 히터 모듈
US6947665B2 (en) * 2003-02-10 2005-09-20 Axcelis Technologies, Inc. Radiant heating source with reflective cavity spanning at least two heating elements
US7279068B2 (en) * 2003-12-15 2007-10-09 Texas Instruments Incorporated Temperature control assembly for use in etching processes
US20070138134A1 (en) * 2005-12-19 2007-06-21 Chuan-Han Hsieh Etching apparatus and etching method
CN100428404C (zh) * 2006-03-17 2008-10-22 中国电子科技集团公司第四十八研究所 半导体晶片的封闭式红外线加热装置
US7822324B2 (en) * 2006-08-14 2010-10-26 Applied Materials, Inc. Load lock chamber with heater in tube
US20080083611A1 (en) * 2006-10-06 2008-04-10 Tegal Corporation High-adhesive backside metallization
JP4870604B2 (ja) * 2007-03-29 2012-02-08 株式会社ニューフレアテクノロジー 気相成長装置
KR20090057729A (ko) * 2007-12-03 2009-06-08 에이피시스템 주식회사 급속열처리장치의 히터블록
US8808513B2 (en) * 2008-03-25 2014-08-19 Oem Group, Inc Stress adjustment in reactive sputtering
US20090246385A1 (en) * 2008-03-25 2009-10-01 Tegal Corporation Control of crystal orientation and stress in sputter deposited thin films
EP2271587A1 (en) * 2008-03-26 2011-01-12 GT Solar Incorporated Gold-coated polysilicon reactor system and method
US8482375B2 (en) * 2009-05-24 2013-07-09 Oem Group, Inc. Sputter deposition of cermet resistor films with low temperature coefficient of resistance
US10405375B2 (en) * 2013-03-11 2019-09-03 Applied Materials, Inc. Lamphead PCB with flexible standoffs
US11015244B2 (en) 2013-12-30 2021-05-25 Advanced Material Solutions, Llc Radiation shielding for a CVD reactor
CN105448768B (zh) * 2014-06-19 2019-10-11 北京北方华创微电子装备有限公司 半导体加工设备
KR102054222B1 (ko) * 2017-09-29 2019-12-11 세메스 주식회사 기판 가열 유닛
KR102037908B1 (ko) * 2017-09-29 2019-10-29 세메스 주식회사 기판 가열 유닛 및 이를 갖는 기판 처리 장치
CN116705669B (zh) * 2023-08-04 2023-10-20 盛吉盛半导体科技(北京)有限公司 一种冷却效果均匀的半导体设备用加热灯盘及冷却方法

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JPS5938584A (ja) * 1982-08-30 1984-03-02 ウシオ電機株式会社 照射加熱炉の運転方法
JPS63227014A (ja) * 1987-03-17 1988-09-21 Matsushita Electric Ind Co Ltd ランプ加熱装置
JPH01146280A (ja) * 1987-12-03 1989-06-08 Shinku Riko Kk 高精度赤外線加熱装置
JPH02133394A (ja) * 1988-11-14 1990-05-22 Nec Corp ランプ加熱型エピタキシャル成長装置
JP2725081B2 (ja) * 1990-07-05 1998-03-09 富士通株式会社 半導体装置製造用熱処理装置
JPH04288820A (ja) * 1991-03-06 1992-10-13 Mitsubishi Electric Corp ランプ加熱装置

Also Published As

Publication number Publication date
EP0641016B1 (en) 2000-01-19
JPH07130678A (ja) 1995-05-19
EP0641016A1 (en) 1995-03-01
US5345534A (en) 1994-09-06
TW267250B (enExample) 1996-01-01
KR940023316A (ko) 1994-10-22
DE69422673D1 (de) 2000-02-24

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee