DE69415904D1 - Schrittweises Behandlungssystem von Halbleiterplättchen - Google Patents

Schrittweises Behandlungssystem von Halbleiterplättchen

Info

Publication number
DE69415904D1
DE69415904D1 DE69415904T DE69415904T DE69415904D1 DE 69415904 D1 DE69415904 D1 DE 69415904D1 DE 69415904 T DE69415904 T DE 69415904T DE 69415904 T DE69415904 T DE 69415904T DE 69415904 D1 DE69415904 D1 DE 69415904D1
Authority
DE
Germany
Prior art keywords
treatment system
semiconductor wafers
step treatment
wafers
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69415904T
Other languages
English (en)
Other versions
DE69415904T2 (de
Inventor
Hiroshi Nozue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Electronics Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Application granted granted Critical
Publication of DE69415904D1 publication Critical patent/DE69415904D1/de
Publication of DE69415904T2 publication Critical patent/DE69415904T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/701—Off-axis setting using an aperture
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
DE69415904T 1993-09-16 1994-09-16 Schrittweises Behandlungssystem von Halbleiterplättchen Expired - Fee Related DE69415904T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5229353A JP2590700B2 (ja) 1993-09-16 1993-09-16 投影露光装置

Publications (2)

Publication Number Publication Date
DE69415904D1 true DE69415904D1 (de) 1999-02-25
DE69415904T2 DE69415904T2 (de) 1999-05-27

Family

ID=16890837

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69415904T Expired - Fee Related DE69415904T2 (de) 1993-09-16 1994-09-16 Schrittweises Behandlungssystem von Halbleiterplättchen

Country Status (5)

Country Link
US (1) US5452053A (de)
EP (1) EP0644581B1 (de)
JP (1) JP2590700B2 (de)
KR (1) KR0142633B1 (de)
DE (1) DE69415904T2 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5446587A (en) * 1992-09-03 1995-08-29 Samsung Electronics Co., Ltd. Projection method and projection system and mask therefor
JP2870390B2 (ja) * 1993-11-26 1999-03-17 日本電気株式会社 投影露光装置
KR100239924B1 (ko) * 1998-12-15 2000-01-15 박병선 회절격자의 제조방법
US8475636B2 (en) 2008-11-07 2013-07-02 Novellus Systems, Inc. Method and apparatus for electroplating
KR100446294B1 (ko) * 2002-02-06 2004-09-01 삼성전자주식회사 사입사 조명을 구현하는 포토마스크 및 그 제조 방법
US7370659B2 (en) * 2003-08-06 2008-05-13 Micron Technology, Inc. Photolithographic stepper and/or scanner machines including cleaning devices and methods of cleaning photolithographic stepper and/or scanner machines
US7583358B2 (en) * 2005-07-25 2009-09-01 Micron Technology, Inc. Systems and methods for retrieving residual liquid during immersion lens photolithography
US7456928B2 (en) * 2005-08-29 2008-11-25 Micron Technology, Inc. Systems and methods for controlling ambient pressure during processing of microfeature workpieces, including during immersion lithography
US8472004B2 (en) * 2006-01-18 2013-06-25 Micron Technology, Inc. Immersion photolithography scanner
US20120261254A1 (en) * 2011-04-15 2012-10-18 Reid Jonathan D Method and apparatus for filling interconnect structures
CN108330518B (zh) * 2011-04-15 2020-06-12 诺发系统有限公司 用于填充互连结构的方法及设备
US9670588B2 (en) 2013-05-01 2017-06-06 Lam Research Corporation Anisotropic high resistance ionic current source (AHRICS)
US9816194B2 (en) 2015-03-19 2017-11-14 Lam Research Corporation Control of electrolyte flow dynamics for uniform electroplating
US10014170B2 (en) 2015-05-14 2018-07-03 Lam Research Corporation Apparatus and method for electrodeposition of metals with the use of an ionically resistive ionically permeable element having spatially tailored resistivity
KR101868392B1 (ko) * 2016-06-03 2018-06-21 (주)넷츠 스테퍼설비의 웨이퍼 전압 조절 장치

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3374452D1 (en) * 1982-04-05 1987-12-17 Ibm Method of increasing the image resolution of a transmitting mask and improved masks for performing the method
GB2212944B (en) * 1987-11-30 1991-10-23 Plessey Co Plc Improved process in the manufacture of integrated circuits
JP2995820B2 (ja) * 1990-08-21 1999-12-27 株式会社ニコン 露光方法及び方法，並びにデバイス製造方法
JP2657936B2 (ja) * 1991-05-20 1997-09-30 日本電信電話株式会社 マスク照明光学系及びそれを用いる投影露光装置並びに方法
DE69215942T2 (de) * 1991-04-05 1997-07-24 Nippon Telegraph And Telephone Corp., Tokio/Tokyo Verfahren und System zur optischen Projetkionsbelichtung
JPH04369208A (ja) * 1991-06-18 1992-12-22 Mitsubishi Electric Corp 投影露光装置
JP3165711B2 (ja) * 1991-08-02 2001-05-14 キヤノン株式会社 像投影方法及び該方法を用いた半導体デバイスの製造方法
JP3250563B2 (ja) * 1992-01-17 2002-01-28 株式会社ニコン フォトマスク、並びに露光方法及びその露光方法を用いた回路パターン素子製造方法、並びに露光装置

Also Published As

Publication number Publication date
KR0142633B1 (ko) 1998-08-17
KR950009902A (ko) 1995-04-26
EP0644581B1 (de) 1999-01-13
EP0644581A1 (de) 1995-03-22
DE69415904T2 (de) 1999-05-27
JPH0786142A (ja) 1995-03-31
US5452053A (en) 1995-09-19
JP2590700B2 (ja) 1997-03-12

Similar Documents

Publication Publication Date Title
DE69500752T2 (de) Wafer Träger
DE69428618D1 (de) Thermischer Reaktor für Operationen zur Bearbeitung von Halbleiter-Wafer
DE59406106D1 (de) Leistungshalbleiterbauelement
DE69400694D1 (de) Halbleitervorrichtung
DE69415904D1 (de) Schrittweises Behandlungssystem von Halbleiterplättchen
DE69414277T2 (de) Halbleiterwaferkassette
FI945204A (fi) Puolijohdekomponentti
DE69429748T2 (de) Halbleiterinspektionssystem
DE69432737D1 (de) Halbleiterinspektionssystem
DE69116033D1 (de) Reaktor zur Behandlung von Halbleiterscheiben.
DE69409597D1 (de) Leistungshalbleiterbauelement
DE4496282T1 (de) Halbleiter-Einrichtung
DE69305421D1 (de) Halbleiterschaltung
DE69105530D1 (de) Halbleiterscheibe.
NO954863D0 (no) Halvlederanordning
KR940006476U (ko) 반도체 웨이퍼 건조장치
KR950012603U (ko) 반도체 웨이퍼 테스트 시스템
KR950010196U (ko) 반도체 웨이퍼 캐리어
KR950015651U (ko) 반도체 웨이퍼 캐리어
KR940027624U (ko) 플랫트존을 갖지 않는 반도체 웨이퍼
KR980005422U (ko) 반도체 웨이퍼 캐리어
KR970056082U (ko) 반도체 웨이퍼 자동반송용 캐리어
KR940004310U (ko) 회전형 웨이퍼 스테이지 방식 급속 열처리장치
KR940023533U (ko) 웨이퍼 척의 구조
KR950015158U (ko) 반도체 웨이퍼의 노광장치

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: NEC ELECTRONICS CORP., KAWASAKI, KANAGAWA, JP

8339 Ceased/non-payment of the annual fee