DE69415729T2 - Verfahren zur Begrenzung des Haftens eines Körpers am Träger bei einer Abscheidungs-Behandlung - Google Patents

Verfahren zur Begrenzung des Haftens eines Körpers am Träger bei einer Abscheidungs-Behandlung

Info

Publication number
DE69415729T2
DE69415729T2 DE69415729T DE69415729T DE69415729T2 DE 69415729 T2 DE69415729 T2 DE 69415729T2 DE 69415729 T DE69415729 T DE 69415729T DE 69415729 T DE69415729 T DE 69415729T DE 69415729 T2 DE69415729 T2 DE 69415729T2
Authority
DE
Germany
Prior art keywords
adherence
wearer
limiting
deposition treatment
deposition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69415729T
Other languages
English (en)
Other versions
DE69415729D1 (de
Inventor
Robert Robertson
Marc Michael Kollrack
Angela T Lee
Kam Law
Dan Maydan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of DE69415729D1 publication Critical patent/DE69415729D1/de
Application granted granted Critical
Publication of DE69415729T2 publication Critical patent/DE69415729T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Vapour Deposition (AREA)
DE69415729T 1993-06-21 1994-06-21 Verfahren zur Begrenzung des Haftens eines Körpers am Träger bei einer Abscheidungs-Behandlung Expired - Fee Related DE69415729T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/080,018 US5380566A (en) 1993-06-21 1993-06-21 Method of limiting sticking of body to susceptor in a deposition treatment

Publications (2)

Publication Number Publication Date
DE69415729D1 DE69415729D1 (de) 1999-02-18
DE69415729T2 true DE69415729T2 (de) 1999-08-19

Family

ID=22154729

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69415729T Expired - Fee Related DE69415729T2 (de) 1993-06-21 1994-06-21 Verfahren zur Begrenzung des Haftens eines Körpers am Träger bei einer Abscheidungs-Behandlung

Country Status (5)

Country Link
US (1) US5380566A (de)
EP (1) EP0630990B1 (de)
JP (1) JP3135189B2 (de)
KR (1) KR100324555B1 (de)
DE (1) DE69415729T2 (de)

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US5665167A (en) * 1993-02-16 1997-09-09 Tokyo Electron Kabushiki Kaisha Plasma treatment apparatus having a workpiece-side electrode grounding circuit
TW269743B (de) * 1994-04-26 1996-02-01 Toshiba Eng Co
KR0164149B1 (ko) * 1995-03-28 1999-02-01 김주용 타이타늄 카보 나이트라이드층의 개질 방법
US5997962A (en) * 1995-06-30 1999-12-07 Tokyo Electron Limited Plasma process utilizing an electrostatic chuck
KR100267418B1 (ko) * 1995-12-28 2000-10-16 엔도 마코토 플라스마처리방법및플라스마처리장치
JP3163973B2 (ja) * 1996-03-26 2001-05-08 日本電気株式会社 半導体ウエハ・チャック装置及び半導体ウエハの剥離方法
US6083569A (en) * 1996-10-25 2000-07-04 Applied Materials, Inc. Discharging a wafer after a plasma process for dielectric deposition
US6090705A (en) * 1998-01-20 2000-07-18 Tokyo Electron Limited Method of eliminating edge effect in chemical vapor deposition of a metal
JP3549188B2 (ja) 2000-03-27 2004-08-04 日本エー・エス・エム株式会社 半導体基板への薄膜成膜方法
EP1174910A3 (de) * 2000-07-20 2010-01-06 Applied Materials, Inc. Verfahren und Vorrichtung zum Lösen eines Substrats von einer Halteplatte
KR100740830B1 (ko) * 2000-11-03 2007-07-20 엘지전자 주식회사 난방기의 운전 제어방법
US20020083897A1 (en) * 2000-12-29 2002-07-04 Applied Materials, Inc. Full glass substrate deposition in plasma enhanced chemical vapor deposition
US6960263B2 (en) 2002-04-25 2005-11-01 Applied Materials, Inc. Shadow frame with cross beam for semiconductor equipment
US20040096636A1 (en) * 2002-11-18 2004-05-20 Applied Materials, Inc. Lifting glass substrate without center lift pins
US7972663B2 (en) * 2002-12-20 2011-07-05 Applied Materials, Inc. Method and apparatus for forming a high quality low temperature silicon nitride layer
US7172792B2 (en) * 2002-12-20 2007-02-06 Applied Materials, Inc. Method for forming a high quality low temperature silicon nitride film
US7365029B2 (en) * 2002-12-20 2008-04-29 Applied Materials, Inc. Method for silicon nitride chemical vapor deposition
JP2005064284A (ja) * 2003-08-14 2005-03-10 Asm Japan Kk 半導体基板保持装置
KR100526923B1 (ko) * 2004-01-05 2005-11-09 삼성전자주식회사 반도체 제조설비의 리프트핀 및 그 제조방법
US20060005770A1 (en) * 2004-07-09 2006-01-12 Robin Tiner Independently moving substrate supports
US7434712B2 (en) * 2004-07-09 2008-10-14 Blackhawk Industries Product Group Unlimited Llc Hooded holster
US7375946B2 (en) * 2004-08-16 2008-05-20 Applied Materials, Inc. Method and apparatus for dechucking a substrate
US8075952B2 (en) 2006-06-29 2011-12-13 Applied Materials, Inc. Power loading substrates to reduce particle contamination
JP2009088267A (ja) * 2007-09-28 2009-04-23 Tokyo Electron Ltd 成膜方法、成膜装置、記憶媒体及び半導体装置
JP5683469B2 (ja) * 2008-10-09 2015-03-11 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 大型プラズマ処理チャンバのｒｆ復路
US20100151688A1 (en) * 2008-12-12 2010-06-17 Applied Materials, Inc. Method to prevent thin spot in large size system
US20100184290A1 (en) * 2009-01-16 2010-07-22 Applied Materials, Inc. Substrate support with gas introduction openings
US8313612B2 (en) 2009-03-24 2012-11-20 Lam Research Corporation Method and apparatus for reduction of voltage potential spike during dechucking
US8797705B2 (en) * 2009-09-10 2014-08-05 Lam Research Corporation Methods and arrangement for plasma dechuck optimization based on coupling of plasma signaling to substrate position and potential
US9194045B2 (en) * 2012-04-03 2015-11-24 Novellus Systems, Inc. Continuous plasma and RF bias to regulate damage in a substrate processing system
US9145607B2 (en) 2013-10-22 2015-09-29 Lam Research Corporation Tandem source activation for cyclical deposition of films
US10770257B2 (en) * 2018-07-20 2020-09-08 Asm Ip Holding B.V. Substrate processing method

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EP0062491B2 (de) * 1981-04-04 1991-12-11 National Research Development Corporation Polymere in Materialverstärkung
JPS5821324A (ja) * 1981-07-30 1983-02-08 Agency Of Ind Science & Technol 水素添加した半導体薄膜成長用金属表面基板の前処理方法
US4391843A (en) * 1981-08-14 1983-07-05 Rca Corporation Adherent perfluorinated layers
DE3574997D1 (de) * 1984-03-03 1990-02-01 Stc Plc Pulsierendes plasmaverfahren.
JPS61136220A (ja) * 1984-12-07 1986-06-24 Fuji Electric Co Ltd 微結晶シリコン膜の形成方法
JPH0711854B2 (ja) * 1984-12-30 1995-02-08 ティーディーケイ株式会社 磁気記録媒体
JPH0691065B2 (ja) * 1985-12-18 1994-11-14 三洋電機株式会社 プラズマｃｖｄ法
US4766006A (en) * 1986-05-15 1988-08-23 Varian Associates, Inc. Low pressure chemical vapor deposition of metal silicide
JPS63241185A (ja) * 1987-03-27 1988-10-06 Matsushita Electric Ind Co Ltd 金属薄膜の堆積方法
DE3800712A1 (de) * 1988-01-13 1989-07-27 Philips Patentverwaltung Verfahren zur plasmaaktivierten reaktiven abscheidung von elektrisch leitendem mehrkomponentenmaterial aus einer gasphase
DE3806587A1 (de) * 1988-02-26 1989-09-07 Schering Ag Verfahren zur herstellung fest haftender metallischer strukturen auf polyimid
KR0145302B1 (ko) * 1988-04-28 1998-08-17 카자마 젠쥬 얇은 막의 형성방법
DE3919724A1 (de) * 1989-06-16 1990-12-20 Philips Patentverwaltung Verfahren zur herstellung von erdalkalimetallhaltigen und/oder erdalkalimetalloxidhaltigen materialien
US5075256A (en) * 1989-08-25 1991-12-24 Applied Materials, Inc. Process for removing deposits from backside and end edge of semiconductor wafer while preventing removal of materials from front surface of wafer
US5017939A (en) * 1989-09-26 1991-05-21 Hughes Aircraft Company Two layer matching dielectrics for radomes and lenses for wide angles of incidence
US5223457A (en) * 1989-10-03 1993-06-29 Applied Materials, Inc. High-frequency semiconductor wafer processing method using a negative self-bias
DE4005956C1 (de) * 1990-02-26 1991-06-06 Siegfried Dipl.-Ing. Dr. 5135 Selfkant De Straemke
DE4034842A1 (de) * 1990-11-02 1992-05-07 Thyssen Edelstahlwerke Ag Verfahren zur plasmachemischen reinigung fuer eine anschliessende pvd oder pecvd beschichtung

Also Published As

Publication number Publication date
KR950000931A (ko) 1995-01-03
KR100324555B1 (ko) 2002-11-27
EP0630990A3 (de) 1996-01-03
US5380566A (en) 1995-01-10
JPH0754152A (ja) 1995-02-28
DE69415729D1 (de) 1999-02-18
EP0630990A2 (de) 1994-12-28
JP3135189B2 (ja) 2001-02-13
EP0630990B1 (de) 1999-01-07

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee