DE69412747T2 - Herstellungsverfahren für Strahlung emittierende Halbleiterdiode - Google Patents

Herstellungsverfahren für Strahlung emittierende Halbleiterdiode

Info

Publication number
DE69412747T2
DE69412747T2 DE69412747T DE69412747T DE69412747T2 DE 69412747 T2 DE69412747 T2 DE 69412747T2 DE 69412747 T DE69412747 T DE 69412747T DE 69412747 T DE69412747 T DE 69412747T DE 69412747 T2 DE69412747 T2 DE 69412747T2
Authority
DE
Germany
Prior art keywords
manufacturing process
emitting semiconductor
semiconductor diode
radiation emitting
radiation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69412747T
Other languages
English (en)
Other versions
DE69412747D1 (de
Inventor
Johannes Cornelis Norb Rijpers
Leonardus Joannes Mari Hendrix
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
UNIPHASE OPTO HOLDINGS Inc SAN JOSE CALIF US
Original Assignee
Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronics NV filed Critical Philips Electronics NV
Application granted granted Critical
Publication of DE69412747D1 publication Critical patent/DE69412747D1/de
Publication of DE69412747T2 publication Critical patent/DE69412747T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0272—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers for lift-off processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
DE69412747T 1993-10-18 1994-10-11 Herstellungsverfahren für Strahlung emittierende Halbleiterdiode Expired - Fee Related DE69412747T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
BE9301102A BE1007661A3 (nl) 1993-10-18 1993-10-18 Werkwijze ter vervaardiging van een straling-emitterende halfgeleiderdiode.

Publications (2)

Publication Number Publication Date
DE69412747D1 DE69412747D1 (de) 1998-10-01
DE69412747T2 true DE69412747T2 (de) 1999-03-25

Family

ID=3887441

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69412747T Expired - Fee Related DE69412747T2 (de) 1993-10-18 1994-10-11 Herstellungsverfahren für Strahlung emittierende Halbleiterdiode

Country Status (5)

Country Link
US (1) US5541139A (de)
EP (1) EP0649198B1 (de)
JP (1) JP2836733B2 (de)
BE (1) BE1007661A3 (de)
DE (1) DE69412747T2 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0983061A (ja) * 1995-09-08 1997-03-28 Sharp Corp 半導体レーザ素子の製造方法および半導体レーザ素子製造装置
US6297170B1 (en) 1998-06-23 2001-10-02 Vlsi Technology, Inc. Sacrificial multilayer anti-reflective coating for mos gate formation
US6410210B1 (en) * 1999-05-20 2002-06-25 Philips Semiconductors Semiconductor blocking layer for preventing UV radiation damage to MOS gate oxides
JP3582424B2 (ja) * 1999-10-29 2004-10-27 日亜化学工業株式会社 半導体レーザ装置
US20220158012A1 (en) * 2020-11-19 2022-05-19 Sunpower Corporation Protection coating for solar cell wafers
CN112750766B (zh) * 2020-12-14 2022-12-27 山东融创电子科技有限公司 一种长寿命二极管的制备工艺

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4275286A (en) * 1978-12-04 1981-06-23 Hughes Aircraft Company Process and mask for ion beam etching of fine patterns
JPS58125886A (ja) * 1982-01-22 1983-07-27 Hitachi Ltd 半導体装置の製造方法
JPS5955015A (ja) * 1982-09-22 1984-03-29 Fujitsu Ltd 半導体装置の製造方法
JPS59126635A (ja) * 1983-01-08 1984-07-21 Mitsubishi Electric Corp 微細パタ−ンの形成方法
JPS6170780A (ja) * 1984-09-13 1986-04-11 Sony Corp 半導体レ−ザ−の製造方法
JPS61116833A (ja) * 1984-11-13 1986-06-04 Nec Corp 半導体装置の製造方法
FR2598263B1 (fr) * 1986-04-30 1989-06-02 Thomson Csf Laser semiconducteur a haut niveau de non-linearite et procede de passivation differentielle des faces clivees de ce laser.
NL8700904A (nl) * 1987-04-16 1988-11-16 Philips Nv Halfgeleiderlaserinrichting en werkwijze voor het vervaardigen daarvan.
JP2680917B2 (ja) * 1990-08-01 1997-11-19 シャープ株式会社 半導体レーザ素子の製造方法
US5104824A (en) * 1990-11-06 1992-04-14 Bell Communications Research, Inc. Selective area regrowth for surface-emitting lasers and other sharp features
JPH04243216A (ja) * 1991-01-17 1992-08-31 Nec Corp 光導波路の製造方法ならびに光集積素子及びその製造方法
JPH04309282A (ja) * 1991-04-05 1992-10-30 Ando Electric Co Ltd 半導体レーザバーの共振器端面への誘電体膜形成方法
US5300452A (en) * 1991-12-18 1994-04-05 U.S. Philips Corporation Method of manufacturing an optoelectronic semiconductor device

Also Published As

Publication number Publication date
JP2836733B2 (ja) 1998-12-14
JPH07162101A (ja) 1995-06-23
BE1007661A3 (nl) 1995-09-05
DE69412747D1 (de) 1998-10-01
EP0649198B1 (de) 1998-08-26
US5541139A (en) 1996-07-30
EP0649198A1 (de) 1995-04-19

Similar Documents

Publication Publication Date Title
DE69428578D1 (de) Herstellungsverfahren für lichtemittierenden Halbleitervorrichtungen
DE69127677T2 (de) Lichtemittierende Halbleiterdioden
GB9517634D0 (en) Semiconductor light emitting diode
DE69408374T2 (de) Lichtemittierende Halbleitervorrichtung
DE69533276D1 (de) Lichtemittierende Halbleitervorrichtungen
DE69029340T2 (de) Halbleiterlaser mit fünfelementigem Verbindungshalbleiter
DE69404701T2 (de) Abstimmbarer oberflächenemittierender Halbleiterlaser
GB2270199B (en) Semiconductor light emitting element
DE59406621D1 (de) Herstellungsverfahren für vertikal kontaktierte halbleiterbauelemente
DE68913877D1 (de) Lichtemittierende Halbleitervorrichtungen mit grossem Bandabstand.
DE69210942D1 (de) Halbleiterherstellung
DE69208937D1 (de) Halbleiter-Herstellungseinrichtung
EP0423772A3 (en) Semiconductor light emitting element
DE69412946T2 (de) Lichtemittierende Halbleiterdiode und Herstellungsverfahren
DE69432345D1 (de) Halbleiterdiodenlaser
DE69101157T2 (de) Lichtaussendes Halbleiterelement.
DE69224617T2 (de) Herstellungsverfahren für einen Halbleiterlaser
DE69412747D1 (de) Herstellungsverfahren für Strahlung emittierende Halbleiterdiode
GB9502957D0 (en) Semiconductor light emitting element
DE69420202D1 (de) Lichtemittierende Halbleitervorrichtung
DE59400463D1 (de) Lichtemittierendes Halbleiterbauelement
EP0487823A3 (en) Semiconductor light emitting element
DE69404911T2 (de) Lichtemittierende Halbleitervorrichtung
KR860005453A (ko) 반도체 광방출장치 제조방법
DE69312415T2 (de) Herstellungsverfahren für einen Halbleiterlaser mit vergrabener Heterostruktur

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: UNIPHASE OPTO HOLDINGS INC., SAN JOSE, CALIF., US

8339 Ceased/non-payment of the annual fee