DE69411660T2 - Vorrichtung zur Herstellung von Silizium-Einkristallen durch das Czochralski-Verfahren - Google Patents

Vorrichtung zur Herstellung von Silizium-Einkristallen durch das Czochralski-Verfahren

Info

Publication number
DE69411660T2
DE69411660T2 DE69411660T DE69411660T DE69411660T2 DE 69411660 T2 DE69411660 T2 DE 69411660T2 DE 69411660 T DE69411660 T DE 69411660T DE 69411660 T DE69411660 T DE 69411660T DE 69411660 T2 DE69411660 T2 DE 69411660T2
Authority
DE
Germany
Prior art keywords
production
silicon single
single crystals
czochralski process
czochralski
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69411660T
Other languages
English (en)
Other versions
DE69411660D1 (de
Inventor
Kiyotaka Takano
Izumi Fusegawa
Hirotoshi Yamagishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Publication of DE69411660D1 publication Critical patent/DE69411660D1/de
Application granted granted Critical
Publication of DE69411660T2 publication Critical patent/DE69411660T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1072—Seed pulling including details of means providing product movement [e.g., shaft guides, servo means]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
DE69411660T 1993-08-27 1994-08-18 Vorrichtung zur Herstellung von Silizium-Einkristallen durch das Czochralski-Verfahren Expired - Fee Related DE69411660T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5212524A JP2862158B2 (ja) 1993-08-27 1993-08-27 シリコン単結晶の製造装置

Publications (2)

Publication Number Publication Date
DE69411660D1 DE69411660D1 (de) 1998-08-20
DE69411660T2 true DE69411660T2 (de) 1999-02-11

Family

ID=16624102

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69411660T Expired - Fee Related DE69411660T2 (de) 1993-08-27 1994-08-18 Vorrichtung zur Herstellung von Silizium-Einkristallen durch das Czochralski-Verfahren

Country Status (4)

Country Link
US (1) US5871583A (de)
EP (1) EP0648867B1 (de)
JP (1) JP2862158B2 (de)
DE (1) DE69411660T2 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5942032A (en) * 1997-08-01 1999-08-24 Memc Electronic Materials, Inc. Heat shield assembly and method of growing vacancy rich single crystal silicon
JP4611507B2 (ja) * 2000-10-31 2011-01-12 三菱マテリアル株式会社 結晶シリコン製造装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4058699A (en) * 1975-08-01 1977-11-15 Arthur D. Little, Inc. Radiant zone heating apparatus and method
JPS5836998A (ja) * 1981-08-26 1983-03-04 Toshiba Ceramics Co Ltd 単結晶シリコン引上装置
JPS6153187A (ja) * 1984-08-24 1986-03-17 Sony Corp 単結晶成長装置
US5186911A (en) * 1988-07-05 1993-02-16 Korea Advanced Institute Of Science And Technology Single crystal growing apparatus and method
JPH0633235B2 (ja) * 1989-04-05 1994-05-02 新日本製鐵株式会社 酸化膜耐圧特性の優れたシリコン単結晶及びその製造方法
JP3016897B2 (ja) * 1991-03-20 2000-03-06 信越半導体株式会社 シリコン単結晶の製造方法及び装置

Also Published As

Publication number Publication date
US5871583A (en) 1999-02-16
JPH0761888A (ja) 1995-03-07
DE69411660D1 (de) 1998-08-20
EP0648867B1 (de) 1998-07-15
EP0648867A1 (de) 1995-04-19
JP2862158B2 (ja) 1999-02-24

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee