DE69410467D1 - Silizium-bildelektrode - Google Patents

Silizium-bildelektrode

Info

Publication number
DE69410467D1
DE69410467D1 DE69410467T DE69410467T DE69410467D1 DE 69410467 D1 DE69410467 D1 DE 69410467D1 DE 69410467 T DE69410467 T DE 69410467T DE 69410467 T DE69410467 T DE 69410467T DE 69410467 D1 DE69410467 D1 DE 69410467D1
Authority
DE
Germany
Prior art keywords
image electrode
silicon image
silicon
electrode
image
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69410467T
Other languages
English (en)
Other versions
DE69410467T2 (de
Inventor
Kalluri Sarma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honeywell Inc
Original Assignee
Honeywell Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell Inc filed Critical Honeywell Inc
Application granted granted Critical
Publication of DE69410467D1 publication Critical patent/DE69410467D1/de
Publication of DE69410467T2 publication Critical patent/DE69410467T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/10—Materials and properties semiconductor
    • G02F2202/104—Materials and properties semiconductor poly-Si

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
DE69410467T 1993-07-29 1994-07-28 Silizium-bildelektrode Expired - Lifetime DE69410467T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/099,961 US5471330A (en) 1993-07-29 1993-07-29 Polysilicon pixel electrode
PCT/US1994/008504 WO1995004301A1 (en) 1993-07-29 1994-07-28 Silicon pixel electrode

Publications (2)

Publication Number Publication Date
DE69410467D1 true DE69410467D1 (de) 1998-06-25
DE69410467T2 DE69410467T2 (de) 1998-12-10

Family

ID=22277438

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69410467T Expired - Lifetime DE69410467T2 (de) 1993-07-29 1994-07-28 Silizium-bildelektrode

Country Status (6)

Country Link
US (1) US5471330A (de)
EP (1) EP0711424B1 (de)
JP (1) JP3628018B2 (de)
CA (1) CA2167396C (de)
DE (1) DE69410467T2 (de)
WO (1) WO1995004301A1 (de)

Families Citing this family (50)

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JP3326654B2 (ja) 1994-05-02 2002-09-24 ソニー株式会社 表示用半導体チップの製造方法
JPH07325323A (ja) * 1994-06-02 1995-12-12 Matsushita Electric Ind Co Ltd 液晶表示装置
EP0689085B1 (de) * 1994-06-20 2003-01-29 Canon Kabushiki Kaisha Anzeigevorrichtung und Verfahren zu ihrer Herstellung
JP3421882B2 (ja) * 1994-10-19 2003-06-30 ソニー株式会社 多結晶半導体薄膜の作成方法
JPH08264790A (ja) * 1995-03-22 1996-10-11 Toshiba Corp 薄膜電解効果トランジスタ及び液晶表示装置
US5717223A (en) * 1995-12-22 1998-02-10 Xerox Corporation Array with amorphous silicon TFTs in which channel leads overlap insulating region no more than maximum overlap
US5733804A (en) * 1995-12-22 1998-03-31 Xerox Corporation Fabricating fully self-aligned amorphous silicon device
JPH09203908A (ja) * 1996-01-25 1997-08-05 Furontetsuku:Kk 液晶表示装置用薄膜トランジスタおよび液晶表示装置
JP3516424B2 (ja) * 1996-03-10 2004-04-05 株式会社半導体エネルギー研究所 薄膜半導体装置
US6746959B2 (en) * 1996-07-26 2004-06-08 Lg Philips Lcd Co., Ltd. Liquid crystal display and method
KR100212284B1 (ko) * 1996-11-13 1999-08-02 윤종용 채널 보호형 박막 트랜지스터 기판
US5990994A (en) * 1997-10-30 1999-11-23 Eastman Kodak Company First and second light sensitive conductive layers for use in image displays
JPH11148078A (ja) * 1997-11-18 1999-06-02 Sanyo Electric Co Ltd アクティブマトリクス型液晶表示装置
JPH11149095A (ja) 1997-11-18 1999-06-02 Sanyo Electric Co Ltd 液晶表示装置及びこれを用いたプロジェクタ装置
JPH11149096A (ja) * 1997-11-18 1999-06-02 Sanyo Electric Co Ltd 反射型液晶表示装置
US6166796A (en) * 1998-01-21 2000-12-26 Eastman Kodak Company Flat panel display having interconnected patternable conductive traces having piercing pins piercing conductive traces and a light modulating layer
US6246070B1 (en) * 1998-08-21 2001-06-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device provided with semiconductor circuit made of semiconductor element and method of fabricating the same
JP4493741B2 (ja) * 1998-09-04 2010-06-30 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR100271813B1 (ko) * 1998-09-28 2000-11-15 구본준 실리콘 박막을 결정화하는 방법과 이를 이용한 박막트랜지스터및 그 제조방법
US6395586B1 (en) * 1999-02-03 2002-05-28 Industrial Technology Research Institute Method for fabricating high aperture ratio TFT's and devices formed
ATE413190T1 (de) 1999-12-01 2008-11-15 Novartis Vaccines & Diagnostic Hervorrufen von antikörpern spezifisch für hepatitis c virus (hcv)
US6569699B1 (en) * 2000-02-01 2003-05-27 Chartered Semiconductor Manufacturing Ltd. Two layer mirror for LCD-on-silicon products and method of fabrication thereof
US7026219B2 (en) * 2001-02-12 2006-04-11 Asm America, Inc. Integration of high k gate dielectric
WO2002080244A2 (en) * 2001-02-12 2002-10-10 Asm America, Inc. Improved process for deposition of semiconductor films
US7294582B2 (en) * 2002-07-19 2007-11-13 Asm International, N.V. Low temperature silicon compound deposition
JP5005170B2 (ja) * 2002-07-19 2012-08-22 エーエスエム アメリカ インコーポレイテッド 超高品質シリコン含有化合物層の形成方法
US7186630B2 (en) 2002-08-14 2007-03-06 Asm America, Inc. Deposition of amorphous silicon-containing films
US20040239846A1 (en) * 2003-05-29 2004-12-02 Chi-Jain Wen Transflective liquid crystal display
CN1296764C (zh) * 2003-06-11 2007-01-24 统宝光电股份有限公司 半穿透半反射液晶显示器
US20050048706A1 (en) * 2003-08-27 2005-03-03 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
TWI308247B (en) * 2004-03-24 2009-04-01 Toppoly Optoelectronics Corp Transflective liquid crystal display and method of fabricating the same
US7629270B2 (en) * 2004-08-27 2009-12-08 Asm America, Inc. Remote plasma activated nitridation
WO2006034051A2 (en) * 2004-09-17 2006-03-30 Radiant Images, Inc. Microdisplay
US7480017B2 (en) * 2004-09-17 2009-01-20 Radiant Images, Inc. Microdisplay
US7966969B2 (en) 2004-09-22 2011-06-28 Asm International N.V. Deposition of TiN films in a batch reactor
US20060103299A1 (en) * 2004-11-15 2006-05-18 The Hong Kong University Of Science And Technology Polycrystalline silicon as an electrode for a light emitting diode & method of making the same
US7629267B2 (en) * 2005-03-07 2009-12-08 Asm International N.V. High stress nitride film and method for formation thereof
WO2006126968A1 (en) * 2005-05-21 2006-11-30 The Hong Kong University Of Science And Technology A transflective liquid crystal device and method of manufacturing the same
CN1964063B (zh) * 2005-11-10 2013-05-29 香港科技大学 适用于有机发光二极管显示器的多晶硅薄膜象素电极
DE102005056364B3 (de) * 2005-11-25 2007-08-16 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Bipolarer Trägerwafer und mobile, bipolare, elektrostatische Waferanordnung
CN101145564B (zh) * 2005-11-25 2012-08-29 香港科技大学 有源矩阵显示基板制备方法
WO2007075369A1 (en) * 2005-12-16 2007-07-05 Asm International N.V. Low temperature doped silicon layer formation
US20070215945A1 (en) * 2006-03-20 2007-09-20 Canon Kabushiki Kaisha Light control device and display
US7691757B2 (en) 2006-06-22 2010-04-06 Asm International N.V. Deposition of complex nitride films
TWI319625B (en) * 2006-11-30 2010-01-11 Tpo Displays Corp Image display system and manufacturing method of multi-gates thin film transistor
US7629256B2 (en) 2007-05-14 2009-12-08 Asm International N.V. In situ silicon and titanium nitride deposition
US7833906B2 (en) 2008-12-11 2010-11-16 Asm International N.V. Titanium silicon nitride deposition
JP5518382B2 (ja) * 2009-07-03 2014-06-11 株式会社ジャパンディスプレイ 液晶表示装置
JP5162050B2 (ja) * 2010-04-21 2013-03-13 シャープ株式会社 半導体素子、半導体素子の製造方法、アクティブマトリクス基板及び表示装置
CN104810375B (zh) * 2015-04-28 2018-09-04 合肥鑫晟光电科技有限公司 一种阵列基板及其制作方法和一种显示装置

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0236629B1 (de) * 1986-03-06 1994-05-18 Kabushiki Kaisha Toshiba Steuerschaltung einer Flüssigkristallanzeige
JP2735177B2 (ja) * 1986-08-18 1998-04-02 富士通株式会社 薄膜トランジスタ及びその製造方法
JP2721153B2 (ja) * 1986-09-05 1998-03-04 株式会社東芝 表示装置
JP2620240B2 (ja) * 1987-06-10 1997-06-11 株式会社日立製作所 液晶表示装置
US5248630A (en) * 1987-07-27 1993-09-28 Nippon Telegraph And Telephone Corporation Thin film silicon semiconductor device and process for producing thereof
JPH01241862A (ja) * 1988-03-24 1989-09-26 Sony Corp 表示装置の製造方法
DE68917774T2 (de) * 1988-04-30 1995-03-16 Sharp Kk Dünnfilm-Halbleitervorrichtung und damit hergestellte Flüssigkristallanzeige.
FR2631743A1 (fr) * 1988-05-23 1989-11-24 Gen Electric Structure a electrodes non coplanaires pour affichage matriciel a cristaux liquides a transistors en couches minces de silicium amorphe et procede de fabrication
US5245452A (en) * 1988-06-24 1993-09-14 Matsushita Electronics Corporation Active matric drive liquid crystal display device using polycrystalline silicon pixel electrodes
JPH0258028A (ja) * 1988-08-24 1990-02-27 Hitachi Ltd 液晶表示装置
JP2661320B2 (ja) * 1990-03-29 1997-10-08 松下電器産業株式会社 液晶表示装置の製造方法
JPH0488643A (ja) * 1990-07-31 1992-03-23 Sanyo Electric Co Ltd 多結晶シリコン半導体装置の製造方法
JP2694912B2 (ja) * 1990-12-28 1997-12-24 シャープ株式会社 アクティブマトリクス基板の製造方法
JPH04253030A (ja) * 1991-01-30 1992-09-08 Matsushita Electron Corp 画像表示装置およびその製造方法
JP3125345B2 (ja) * 1991-08-29 2001-01-15 日本電気株式会社 薄膜トランジスタ素子アレイ及びその製造方法
US5242859A (en) * 1992-07-14 1993-09-07 International Business Machines Corporation Highly doped semiconductor material and method of fabrication thereof
US5366926A (en) * 1993-06-07 1994-11-22 Xerox Corporation Low temperature process for laser dehydrogenation and crystallization of amorphous silicon

Also Published As

Publication number Publication date
EP0711424A1 (de) 1996-05-15
EP0711424B1 (de) 1998-05-20
CA2167396A1 (en) 1995-02-09
US5471330A (en) 1995-11-28
DE69410467T2 (de) 1998-12-10
WO1995004301A1 (en) 1995-02-09
CA2167396C (en) 2004-07-20
JPH09501509A (ja) 1997-02-10
JP3628018B2 (ja) 2005-03-09

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition