DE69409215D1 - Hybrid Magnetstruktur und deren Herstellungsverfahren - Google Patents
Hybrid Magnetstruktur und deren HerstellungsverfahrenInfo
- Publication number
- DE69409215D1 DE69409215D1 DE69409215T DE69409215T DE69409215D1 DE 69409215 D1 DE69409215 D1 DE 69409215D1 DE 69409215 T DE69409215 T DE 69409215T DE 69409215 T DE69409215 T DE 69409215T DE 69409215 D1 DE69409215 D1 DE 69409215D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing process
- magnetic structure
- hybrid magnetic
- hybrid
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
- G02B6/4207—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms with optical elements reducing the sensitivity to optical feedback
- G02B6/4208—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms with optical elements reducing the sensitivity to optical feedback using non-reciprocal elements or birefringent plates, i.e. quasi-isolators
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/09—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on magneto-optical elements, e.g. exhibiting Faraday effect
- G02F1/095—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on magneto-optical elements, e.g. exhibiting Faraday effect in an optical waveguide structure
- G02F1/0955—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on magneto-optical elements, e.g. exhibiting Faraday effect in an optical waveguide structure used as non-reciprocal devices, e.g. optical isolators, circulators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
- H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
- H01F10/18—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being compounds
- H01F10/20—Ferrites
- H01F10/24—Garnets
- H01F10/245—Modifications for enhancing interaction with electromagnetic wave energy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/26—Thin magnetic films, e.g. of one-domain structure characterised by the substrate or intermediate layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/26—Thin magnetic films, e.g. of one-domain structure characterised by the substrate or intermediate layers
- H01F10/28—Thin magnetic films, e.g. of one-domain structure characterised by the substrate or intermediate layers characterised by the composition of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/26—Thin magnetic films, e.g. of one-domain structure characterised by the substrate or intermediate layers
- H01F10/30—Thin magnetic films, e.g. of one-domain structure characterised by the substrate or intermediate layers characterised by the composition of the intermediate layers, e.g. seed, buffer, template, diffusion preventing, cap layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
- H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H2/00—Networks using elements or techniques not provided for in groups H03H3/00 - H03H21/00
- H03H2/001—Networks using elements or techniques not provided for in groups H03H3/00 - H03H21/00 comprising magnetostatic wave network elements
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/09—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on magneto-optical elements, e.g. exhibiting Faraday effect
- G02F1/093—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on magneto-optical elements, e.g. exhibiting Faraday effect used as non-reciprocal devices, e.g. optical isolators, circulators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/10—Methods of surface bonding and/or assembly therefor
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP30509893 | 1993-12-06 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69409215D1 true DE69409215D1 (de) | 1998-04-30 |
DE69409215T2 DE69409215T2 (de) | 1998-07-16 |
Family
ID=17941083
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69409215T Expired - Fee Related DE69409215T2 (de) | 1993-12-06 | 1994-12-05 | Hybrid Magnetstruktur und deren Herstellungsverfahren |
Country Status (3)
Country | Link |
---|---|
US (1) | US6120917A (de) |
EP (1) | EP0657900B1 (de) |
DE (1) | DE69409215T2 (de) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6500694B1 (en) * | 2000-03-22 | 2002-12-31 | Ziptronix, Inc. | Three dimensional device integration method and integrated device |
US6984571B1 (en) | 1999-10-01 | 2006-01-10 | Ziptronix, Inc. | Three dimensional device integration method and integrated device |
US6413339B1 (en) * | 1999-12-22 | 2002-07-02 | International Business Machines Corporation | Low temperature sintering of ferrite materials |
US6902987B1 (en) | 2000-02-16 | 2005-06-07 | Ziptronix, Inc. | Method for low temperature bonding and bonded structure |
US6563133B1 (en) * | 2000-08-09 | 2003-05-13 | Ziptronix, Inc. | Method of epitaxial-like wafer bonding at low temperature and bonded structure |
CN1547627A (zh) * | 2001-06-22 | 2004-11-17 | Tdk��ʽ���� | 磁性石榴石单晶膜形成用衬底、光学元件及其制备方法 |
US6836602B2 (en) * | 2001-10-26 | 2004-12-28 | Corning Incorporated | Direct bonding of optical components |
US6814833B2 (en) * | 2001-10-26 | 2004-11-09 | Corning Incorporated | Direct bonding of articles containing silicon |
US20030081906A1 (en) * | 2001-10-26 | 2003-05-01 | Filhaber John F. | Direct bonding of optical components |
US20030079503A1 (en) * | 2001-10-26 | 2003-05-01 | Cook Glen B. | Direct bonding of glass articles for drawing |
JP2003185985A (ja) * | 2001-12-14 | 2003-07-03 | Fujitsu Ltd | 光回路装置及びその製造方法 |
US6816637B2 (en) | 2002-02-11 | 2004-11-09 | International Business Machines Corporation | Magneto-optical switching backplane for processor interconnection |
US20030188553A1 (en) * | 2002-04-08 | 2003-10-09 | Mann Larry G. | Direct bonding methods using lithium |
US6950235B2 (en) * | 2002-05-02 | 2005-09-27 | Corning Incorporated | Optical isolators and methods of manufacture |
US6791748B2 (en) * | 2002-05-02 | 2004-09-14 | Corning Incorporated | Optical isolators and methods of manufacture |
US20030230113A1 (en) * | 2002-06-12 | 2003-12-18 | Patrick Gedeon | Methods for manufacturing glass articles |
FR2846472B1 (fr) * | 2002-10-28 | 2007-04-20 | Commissariat Energie Atomique | Dispositifs a ondes magnetostatiques base sur des films minces metalliques, procede de fabrication et application a des dispositifs de traitement de signaux hyperfrequences |
AU2003300348A1 (en) * | 2002-12-30 | 2004-07-29 | Corning Incorporated | Fast-switching scalable optical interconnection design with fast contention resolution |
US7109092B2 (en) | 2003-05-19 | 2006-09-19 | Ziptronix, Inc. | Method of room temperature covalent bonding |
US20060099453A1 (en) * | 2004-11-10 | 2006-05-11 | Hung-Chih Wu | Substrate structure connectable by means of magnetic attraction |
JP2007140333A (ja) * | 2005-11-22 | 2007-06-07 | Fujitsu Ltd | 光学素子、光学素子の製造方法及び光学素子の駆動方法 |
WO2010102254A2 (en) * | 2009-03-06 | 2010-09-10 | The Regents Of The University Of California | Thin film vascular stent and biocompatible surface treatment |
EP2575675A4 (de) | 2010-05-25 | 2015-07-29 | Univ California | Flussumleiter mit ultrageringer bruchbereichsabdeckung zur behandlung von aneurysmen und gefässerkrankungen |
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JPS51115794A (en) * | 1975-04-02 | 1976-10-12 | Mitsubishi Electric Corp | Thin film photo switch element |
JPS5223355A (en) * | 1975-08-18 | 1977-02-22 | Nippon Telegr & Teleph Corp <Ntt> | Process for fabricating a flush type light wave guiding path |
FR2338607A1 (fr) * | 1976-01-16 | 1977-08-12 | France Etat | Resonateur a quartz a electrodes non adherentes au cristal |
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KR0157331B1 (ko) * | 1992-06-23 | 1999-02-18 | 모리시타 요이찌 | 수정디바이스와 그 제조방법 |
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US5302879A (en) * | 1992-12-31 | 1994-04-12 | Halliburton Company | Temperature/reference package, and method using the same for high pressure, high temperature oil or gas well |
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-
1994
- 1994-12-05 DE DE69409215T patent/DE69409215T2/de not_active Expired - Fee Related
- 1994-12-05 EP EP94119115A patent/EP0657900B1/de not_active Expired - Lifetime
-
1997
- 1997-08-11 US US08/909,353 patent/US6120917A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0657900B1 (de) | 1998-03-25 |
EP0657900A1 (de) | 1995-06-14 |
US6120917A (en) | 2000-09-19 |
DE69409215T2 (de) | 1998-07-16 |
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