DE69403590T2 - Verfahren zur Herstellung eines Phosphors - Google Patents
Verfahren zur Herstellung eines PhosphorsInfo
- Publication number
- DE69403590T2 DE69403590T2 DE69403590T DE69403590T DE69403590T2 DE 69403590 T2 DE69403590 T2 DE 69403590T2 DE 69403590 T DE69403590 T DE 69403590T DE 69403590 T DE69403590 T DE 69403590T DE 69403590 T2 DE69403590 T2 DE 69403590T2
- Authority
- DE
- Germany
- Prior art keywords
- phosphor
- producing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 title 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
Landscapes
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Molecular Biology (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Conversion Of X-Rays Into Visible Images (AREA)
- Measurement Of Radiation (AREA)
- Formation Of Various Coating Films On Cathode Ray Tubes And Lamps (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/111,994 US5368882A (en) | 1993-08-25 | 1993-08-25 | Process for forming a radiation detector |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69403590D1 DE69403590D1 (de) | 1997-07-10 |
DE69403590T2 true DE69403590T2 (de) | 1998-02-05 |
Family
ID=22341563
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69403590T Expired - Fee Related DE69403590T2 (de) | 1993-08-25 | 1994-08-24 | Verfahren zur Herstellung eines Phosphors |
Country Status (6)
Country | Link |
---|---|
US (1) | US5368882A (de) |
EP (1) | EP0642177B1 (de) |
JP (1) | JPH0792299A (de) |
KR (1) | KR100312890B1 (de) |
CA (1) | CA2128746C (de) |
DE (1) | DE69403590T2 (de) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5515411A (en) * | 1993-03-31 | 1996-05-07 | Shimadzu Corporation | X-ray image pickup tube |
CA2131243A1 (en) * | 1993-09-27 | 1995-03-28 | Kenneth R. Paulson | Process for forming a phosphor |
WO1997042661A1 (en) | 1996-05-08 | 1997-11-13 | 1294339 Ontario Inc. | High resolution flat panel for radiation imaging |
US6177236B1 (en) | 1997-12-05 | 2001-01-23 | Xerox Corporation | Method of making a pixelized scintillation layer and structures incorporating same |
US5981959A (en) * | 1997-12-05 | 1999-11-09 | Xerox Corporation | Pixelized scintillation layer and structures incorporating same |
US6486470B2 (en) | 1998-11-02 | 2002-11-26 | 1294339 Ontario, Inc. | Compensation circuit for use in a high resolution amplified flat panel for radiation imaging |
DE10004891C2 (de) * | 2000-02-04 | 2002-10-31 | Astrium Gmbh | Fokalfläche und Detektor für optoelektronische Bildaufnahmesysteme, Herstellungsverfahren und optoelektronisches Bildaufnahmesystem |
US6628072B2 (en) | 2001-05-14 | 2003-09-30 | Battelle Memorial Institute | Acicular photomultiplier photocathode structure |
US7053381B2 (en) | 2001-12-06 | 2006-05-30 | General Electric Company | Dual para-xylylene layers for an X-ray detector |
JP2004003955A (ja) * | 2002-03-25 | 2004-01-08 | Fuji Photo Film Co Ltd | 放射線像変換パネル |
US7117588B2 (en) * | 2002-04-23 | 2006-10-10 | Ge Medical Systems Global Technology Company, Llc | Method for assembling tiled detectors for ionizing radiation based image detection |
US7618511B2 (en) * | 2003-03-07 | 2009-11-17 | Hamamatsu Photonics K.K. | Scintillator panel and method of manufacturing radiation image sensor |
US20040229002A1 (en) * | 2003-05-15 | 2004-11-18 | 3D Systems, Inc. | Stereolithographic seal and support structure for semiconductor wafer |
PT103370B (pt) * | 2005-10-20 | 2009-01-19 | Univ Do Minho | Matriz de imagem de raios-x com guias de luz e sensores de pixel inteligentes, dispositivos detectores de radiação ou de partículas de alta energia que a contém, seu processo de fabrico e sua utilização |
US7525094B2 (en) * | 2005-12-21 | 2009-04-28 | Los Alamos National Security, Llc | Nanocomposite scintillator, detector, and method |
US7521685B2 (en) * | 2006-01-18 | 2009-04-21 | General Electric Company | Structured scintillator and systems employing structured scintillators |
US7589324B2 (en) * | 2006-12-21 | 2009-09-15 | Redlen Technologies | Use of solder mask as a protective coating for radiation detector |
US7955992B2 (en) * | 2008-08-08 | 2011-06-07 | Redlen Technologies, Inc. | Method of passivating and encapsulating CdTe and CZT segmented detectors |
US9202961B2 (en) | 2009-02-02 | 2015-12-01 | Redlen Technologies | Imaging devices with solid-state radiation detector with improved sensitivity |
US8614423B2 (en) * | 2009-02-02 | 2013-12-24 | Redlen Technologies, Inc. | Solid-state radiation detector with improved sensitivity |
US8476101B2 (en) * | 2009-12-28 | 2013-07-02 | Redlen Technologies | Method of fabricating patterned CZT and CdTe devices |
JP5875420B2 (ja) * | 2011-04-07 | 2016-03-02 | キヤノン株式会社 | 放射線検出素子およびその製造方法 |
JP6018854B2 (ja) * | 2012-09-14 | 2016-11-02 | 浜松ホトニクス株式会社 | シンチレータパネル、及び、放射線検出器 |
EP3613085B1 (de) * | 2017-04-21 | 2021-11-24 | Shenzhen Xpectvision Technology Co., Ltd. | Halbleiterstrahlungsdetektor und herstellungsverfahren |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2705764A (en) * | 1950-02-25 | 1955-04-05 | Rca Corp | Dual-area target electrodes and methods of making the same |
US3672931A (en) * | 1970-07-27 | 1972-06-27 | Columbia Broadcasting Syst Inc | Method of forming phosphor screen |
US4011454A (en) * | 1975-04-28 | 1977-03-08 | General Electric Company | Structured X-ray phosphor screen |
FR2360989A1 (fr) * | 1976-08-03 | 1978-03-03 | Thomson Csf | Intensificateur d'image radiologique, et son procede de fabrication |
JPS5916701B2 (ja) * | 1977-03-14 | 1984-04-17 | 株式会社東芝 | 像増倍管の入力スクリ−ン及びその製造方法 |
JPS5913133B2 (ja) * | 1977-08-29 | 1984-03-28 | 株式会社東芝 | 螢光面の製造方法 |
DE3175963D1 (en) * | 1980-06-16 | 1987-04-09 | Toshiba Kk | Radiation excited phosphor screen and method for manufacturing the same |
US4415609A (en) * | 1980-07-30 | 1983-11-15 | Avco Corporation | Method of applying a carbon-rich surface layer to a silicon carbide filament |
JPH0677079B2 (ja) * | 1984-09-18 | 1994-09-28 | コニカ株式会社 | 放射線画像情報読取装置 |
NL8602021A (nl) * | 1986-08-07 | 1988-03-01 | Optische Ind De Oude Delft Nv | Werkwijze voor het vervaardigen van een beeldopneeminrichting voor radiografische toepassingen. |
US5153438A (en) * | 1990-10-01 | 1992-10-06 | General Electric Company | Method of forming an x-ray imaging array and the array |
US5171996A (en) * | 1991-07-31 | 1992-12-15 | Regents Of The University Of California | Particle detector spatial resolution |
EP0597943A4 (en) * | 1991-07-31 | 1994-07-27 | Univ California | Improvements in particle detector spatial resolution. |
DE4219347C2 (de) * | 1992-06-12 | 1996-05-02 | Siemens Ag | Verfahren zum Erzeugen einer strukturierten Alkalihalogenidschicht und damit hergestellte Leuchtstoffschicht |
-
1993
- 1993-08-25 US US08/111,994 patent/US5368882A/en not_active Expired - Lifetime
-
1994
- 1994-07-25 CA CA002128746A patent/CA2128746C/en not_active Expired - Fee Related
- 1994-08-19 KR KR1019940020469A patent/KR100312890B1/ko not_active IP Right Cessation
- 1994-08-19 JP JP6195318A patent/JPH0792299A/ja active Pending
- 1994-08-24 DE DE69403590T patent/DE69403590T2/de not_active Expired - Fee Related
- 1994-08-24 EP EP94401887A patent/EP0642177B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
KR950005387A (ko) | 1995-03-20 |
US5368882A (en) | 1994-11-29 |
EP0642177B1 (de) | 1997-06-04 |
JPH0792299A (ja) | 1995-04-07 |
KR100312890B1 (ko) | 2002-02-19 |
DE69403590D1 (de) | 1997-07-10 |
EP0642177A1 (de) | 1995-03-08 |
CA2128746A1 (en) | 1995-02-26 |
CA2128746C (en) | 2000-02-08 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: EASTMAN KODAK CO., ROCHESTER, N.Y., US |
|
8328 | Change in the person/name/address of the agent |
Free format text: LEWANDOWSKY, K., DIPL.-ING., PAT.-ANW., 73033 GOEPPINGEN |
|
8339 | Ceased/non-payment of the annual fee |