DE69333600D1 - Apparat zum Herstellen von dünnen Schichten, zur Ausfüllung von feinporigen Substraten - Google Patents

Apparat zum Herstellen von dünnen Schichten, zur Ausfüllung von feinporigen Substraten

Info

Publication number
DE69333600D1
DE69333600D1 DE69333600T DE69333600T DE69333600D1 DE 69333600 D1 DE69333600 D1 DE 69333600D1 DE 69333600 T DE69333600 T DE 69333600T DE 69333600 T DE69333600 T DE 69333600T DE 69333600 D1 DE69333600 D1 DE 69333600D1
Authority
DE
Germany
Prior art keywords
thin layers
producing thin
filling fine
pored
substrates
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69333600T
Other languages
English (en)
Other versions
DE69333600T2 (de
Inventor
Hisaharu Obinata
Tetsuji Kiyota
Satoru Toyoda
Yoshiyuki Kadokura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ulvac Inc
Original Assignee
Ulvac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=26488319&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE69333600(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Ulvac Inc filed Critical Ulvac Inc
Publication of DE69333600D1 publication Critical patent/DE69333600D1/de
Application granted granted Critical
Publication of DE69333600T2 publication Critical patent/DE69333600T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3435—Applying energy to the substrate during sputtering
    • C23C14/345—Applying energy to the substrate during sputtering using substrate bias
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/046—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3322—Problems associated with coating
    • H01J2237/3327—Coating high aspect ratio workpieces

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
DE69333600T 1992-10-28 1993-10-27 Apparat zum Herstellen von dünnen Schichten, zur Ausfüllung von feinporigen Substraten Expired - Lifetime DE69333600T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP28981792 1992-10-28
JP28981792 1992-10-28
JP16257393A JP3231900B2 (ja) 1992-10-28 1993-06-30 成膜装置
JP16257393 1993-06-30

Publications (2)

Publication Number Publication Date
DE69333600D1 true DE69333600D1 (de) 2004-09-30
DE69333600T2 DE69333600T2 (de) 2005-09-15

Family

ID=26488319

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69333600T Expired - Lifetime DE69333600T2 (de) 1992-10-28 1993-10-27 Apparat zum Herstellen von dünnen Schichten, zur Ausfüllung von feinporigen Substraten

Country Status (6)

Country Link
US (1) US6280585B1 (de)
EP (1) EP0595624B1 (de)
JP (1) JP3231900B2 (de)
KR (1) KR100279344B1 (de)
DE (1) DE69333600T2 (de)
TW (1) TW338187B (de)

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JP3868020B2 (ja) * 1995-11-13 2007-01-17 キヤノンアネルバ株式会社 遠距離スパッタ装置及び遠距離スパッタ方法
TW358964B (en) * 1996-11-21 1999-05-21 Applied Materials Inc Method and apparatus for improving sidewall coverage during sputtering in a chamber having an inductively coupled plasma
JP4351755B2 (ja) 1999-03-12 2009-10-28 キヤノンアネルバ株式会社 薄膜作成方法および薄膜作成装置
JP3479023B2 (ja) * 1999-05-18 2003-12-15 シャープ株式会社 電気配線の製造方法および配線基板および表示装置および画像検出器
US10047430B2 (en) 1999-10-08 2018-08-14 Applied Materials, Inc. Self-ionized and inductively-coupled plasma for sputtering and resputtering
US20030116427A1 (en) * 2001-08-30 2003-06-26 Applied Materials, Inc. Self-ionized and inductively-coupled plasma for sputtering and resputtering
US8696875B2 (en) * 1999-10-08 2014-04-15 Applied Materials, Inc. Self-ionized and inductively-coupled plasma for sputtering and resputtering
JP2001201842A (ja) * 1999-11-09 2001-07-27 Ulvac Seimaku Kk 位相シフトフォトマスクブランクス及び位相シフトフォトマスク並びに半導体装置の製造方法
JP5215421B2 (ja) * 1999-11-09 2013-06-19 アルバック成膜株式会社 位相シフトフォトマスクブランクス及び位相シフトフォトマスク並びに半導体装置の製造方法
US6884327B2 (en) 2002-03-16 2005-04-26 Tao Pan Mode size converter for a planar waveguide
US7378356B2 (en) 2002-03-16 2008-05-27 Springworks, Llc Biased pulse DC reactive sputtering of oxide films
US6764385B2 (en) * 2002-07-29 2004-07-20 Nanoclean Technologies, Inc. Methods for resist stripping and cleaning surfaces substantially free of contaminants
US7101260B2 (en) * 2002-07-29 2006-09-05 Nanoclean Technologies, Inc. Methods for resist stripping and other processes for cleaning surfaces substantially free of contaminants
US7134941B2 (en) * 2002-07-29 2006-11-14 Nanoclean Technologies, Inc. Methods for residue removal and corrosion prevention in a post-metal etch process
US7066789B2 (en) * 2002-07-29 2006-06-27 Manoclean Technologies, Inc. Methods for resist stripping and other processes for cleaning surfaces substantially free of contaminants
US7297286B2 (en) * 2002-07-29 2007-11-20 Nanoclean Technologies, Inc. Methods for resist stripping and other processes for cleaning surfaces substantially free of contaminants
US7504006B2 (en) * 2002-08-01 2009-03-17 Applied Materials, Inc. Self-ionized and capacitively-coupled plasma for sputtering and resputtering
US8431264B2 (en) 2002-08-09 2013-04-30 Infinite Power Solutions, Inc. Hybrid thin-film battery
US8404376B2 (en) 2002-08-09 2013-03-26 Infinite Power Solutions, Inc. Metal film encapsulation
US20070264564A1 (en) 2006-03-16 2007-11-15 Infinite Power Solutions, Inc. Thin film battery on an integrated circuit or circuit board and method thereof
US8021778B2 (en) 2002-08-09 2011-09-20 Infinite Power Solutions, Inc. Electrochemical apparatus with barrier layer protected substrate
US7993773B2 (en) 2002-08-09 2011-08-09 Infinite Power Solutions, Inc. Electrochemical apparatus with barrier layer protected substrate
US8445130B2 (en) 2002-08-09 2013-05-21 Infinite Power Solutions, Inc. Hybrid thin-film battery
US8394522B2 (en) 2002-08-09 2013-03-12 Infinite Power Solutions, Inc. Robust metal film encapsulation
US8236443B2 (en) 2002-08-09 2012-08-07 Infinite Power Solutions, Inc. Metal film encapsulation
AU2003261463A1 (en) 2002-08-27 2004-03-19 Symmorphix, Inc. Optically coupling into highly uniform waveguides
US8728285B2 (en) 2003-05-23 2014-05-20 Demaray, Llc Transparent conductive oxides
US7238628B2 (en) 2003-05-23 2007-07-03 Symmorphix, Inc. Energy conversion and storage films and devices by physical vapor deposition of titanium and titanium oxides and sub-oxides
US7959769B2 (en) 2004-12-08 2011-06-14 Infinite Power Solutions, Inc. Deposition of LiCoO2
DE602005017512D1 (de) 2004-12-08 2009-12-17 Symmorphix Inc Abscheidung von licoo2
US20070048451A1 (en) * 2005-08-26 2007-03-01 Applied Materials, Inc. Substrate movement and process chamber scheduling
US7432184B2 (en) * 2005-08-26 2008-10-07 Applied Materials, Inc. Integrated PVD system using designated PVD chambers
US7838133B2 (en) 2005-09-02 2010-11-23 Springworks, Llc Deposition of perovskite and other compound ceramic films for dielectric applications
JP2010505044A (ja) 2006-09-29 2010-02-18 インフィニット パワー ソリューションズ， インコーポレイテッド フレキシブル基板のマスキングおよびフレキシブル基板上にバッテリ層を堆積させるための材料拘束
US8197781B2 (en) 2006-11-07 2012-06-12 Infinite Power Solutions, Inc. Sputtering target of Li3PO4 and method for producing same
US8268488B2 (en) 2007-12-21 2012-09-18 Infinite Power Solutions, Inc. Thin film electrolyte for thin film batteries
KR20150128817A (ko) 2007-12-21 2015-11-18 사푸라스트 리써치 엘엘씨 전해질 막을 위한 표적을 스퍼터링하는 방법
US8518581B2 (en) 2008-01-11 2013-08-27 Inifinite Power Solutions, Inc. Thin film encapsulation for thin film batteries and other devices
US8350519B2 (en) 2008-04-02 2013-01-08 Infinite Power Solutions, Inc Passive over/under voltage control and protection for energy storage devices associated with energy harvesting
JP5248171B2 (ja) * 2008-04-03 2013-07-31 株式会社アルバック 貴金属膜の成膜装置及び貴金属膜の成膜方法
WO2010019577A1 (en) 2008-08-11 2010-02-18 Infinite Power Solutions, Inc. Energy device with integral collector surface for electromagnetic energy harvesting and method thereof
KR101613671B1 (ko) 2008-09-12 2016-04-19 사푸라스트 리써치 엘엘씨 전자기 에너지에 의해 데이터 통신을 하는 통합 도전성 표면을 가진 에너지 장치 및 그 통신 방법
US8508193B2 (en) 2008-10-08 2013-08-13 Infinite Power Solutions, Inc. Environmentally-powered wireless sensor module
CN102576828B (zh) 2009-09-01 2016-04-20 萨普拉斯特研究有限责任公司 具有集成薄膜电池的印刷电路板
US20110300432A1 (en) 2010-06-07 2011-12-08 Snyder Shawn W Rechargeable, High-Density Electrochemical Device
US10964590B2 (en) * 2017-11-15 2021-03-30 Taiwan Semiconductor Manufacturing Co., Ltd. Contact metallization process
US11492699B2 (en) * 2021-02-17 2022-11-08 Applied Materials, Inc. Substrate temperature non-uniformity reduction over target life using spacing compensation

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JPS5845892B2 (ja) * 1980-06-23 1983-10-13 大阪真空化学株式会社 スパツタ蒸着装置
JPS6277477A (ja) * 1985-09-30 1987-04-09 Toshiba Corp 薄膜形成装置
JPS62287071A (ja) * 1986-06-06 1987-12-12 Tadahiro Omi 薄膜の形成装置および形成方法
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US4853102A (en) * 1987-01-07 1989-08-01 Hitachi, Ltd. Sputtering process and an apparatus for carrying out the same
JP2602276B2 (ja) * 1987-06-30 1997-04-23 株式会社日立製作所 スパツタリング方法とその装置
US4963239A (en) * 1988-01-29 1990-10-16 Hitachi, Ltd. Sputtering process and an apparatus for carrying out the same
US4925542A (en) * 1988-12-08 1990-05-15 Trw Inc. Plasma plating apparatus and method
JPH02178923A (ja) * 1988-12-29 1990-07-11 Fujitsu Ltd 半導体装置の製造方法
US4994162A (en) * 1989-09-29 1991-02-19 Materials Research Corporation Planarization method
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Also Published As

Publication number Publication date
US6280585B1 (en) 2001-08-28
EP0595624B1 (de) 2004-08-25
KR100279344B1 (ko) 2001-01-15
JP3231900B2 (ja) 2001-11-26
EP0595624A1 (de) 1994-05-04
JPH06220627A (ja) 1994-08-09
DE69333600T2 (de) 2005-09-15
TW338187B (en) 1998-08-11

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition