DE69332427D1 - Herstellungsmethode für Elektroden für Grabenkondensatoren - Google Patents
Herstellungsmethode für Elektroden für GrabenkondensatorenInfo
- Publication number
- DE69332427D1 DE69332427D1 DE69332427T DE69332427T DE69332427D1 DE 69332427 D1 DE69332427 D1 DE 69332427D1 DE 69332427 T DE69332427 T DE 69332427T DE 69332427 T DE69332427 T DE 69332427T DE 69332427 D1 DE69332427 D1 DE 69332427D1
- Authority
- DE
- Germany
- Prior art keywords
- electrodes
- manufacturing
- trench capacitors
- trench
- capacitors
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000003990 capacitor Substances 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/66181—Conductor-insulator-semiconductor capacitors, e.g. trench capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors with potential-jump barrier or surface barrier
- H01L29/94—Metal-insulator-semiconductors, e.g. MOS
- H01L29/945—Trench capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CA002074848A CA2074848C (en) | 1992-07-29 | 1992-07-29 | Method of forming electrodes for trench capacitors |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69332427D1 true DE69332427D1 (de) | 2002-11-28 |
DE69332427T2 DE69332427T2 (de) | 2003-03-06 |
Family
ID=4150216
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69332427T Expired - Fee Related DE69332427T2 (de) | 1992-07-29 | 1993-07-12 | Herstellungsmethode für Elektroden für Grabenkondensatoren |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP0581475B1 (de) |
JP (1) | JP3378616B2 (de) |
CA (1) | CA2074848C (de) |
DE (1) | DE69332427T2 (de) |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2756103B1 (fr) * | 1996-11-19 | 1999-05-14 | Sgs Thomson Microelectronics | Fabrication de circuits integres bipolaires/cmos et d'un condensateur |
FR2756100B1 (fr) | 1996-11-19 | 1999-02-12 | Sgs Thomson Microelectronics | Transistor bipolaire a emetteur inhomogene dans un circuit integre bicmos |
FR2757683B1 (fr) * | 1996-12-20 | 1999-03-05 | Sgs Thomson Microelectronics | Transistor bipolaire et capacite |
US5976928A (en) * | 1997-11-20 | 1999-11-02 | Advanced Technology Materials, Inc. | Chemical mechanical polishing of FeRAM capacitors |
US6346454B1 (en) * | 1999-01-12 | 2002-02-12 | Agere Systems Guardian Corp. | Method of making dual damascene interconnect structure and metal electrode capacitor |
DE19901210A1 (de) * | 1999-01-14 | 2000-07-27 | Siemens Ag | Halbleiterbauelement und Verfahren zu dessen Herstellung |
FR2819633B1 (fr) * | 2001-01-18 | 2003-05-30 | St Microelectronics Sa | Procede d'integration d'une memoire dram |
DE10208787B4 (de) * | 2002-02-28 | 2007-04-26 | Infineon Technologies Ag | Verfahren zum Füllen von teilweise bauchigen tiefen Gräben oder tiefen Gräben mit einer Flankensteilheit von 90° oder größer und dieses verwendende Verfahren zur Herstellung von MOS-Feldeffekttransistoren und IGBTs |
DE102004010902B4 (de) * | 2004-03-05 | 2007-01-11 | Infineon Technologies Ag | Verfahren zum Übertragen eines kritischen Layouts einer Ebene einer integrierten Schaltung auf ein Halbleitersubstrat |
US7943473B2 (en) * | 2009-01-13 | 2011-05-17 | Maxim Integrated Products, Inc. | Minimum cost method for forming high density passive capacitors for replacement of discrete board capacitors using a minimum cost 3D wafer-to-wafer modular integration scheme |
JP2013089764A (ja) * | 2011-10-18 | 2013-05-13 | Fuji Electric Co Ltd | トレンチ型pipキャパシタとそれを用いたパワー集積回路装置およびパワー集積回路装置の製造方法 |
FR3002685B1 (fr) * | 2013-02-28 | 2016-06-24 | Commissariat Energie Atomique | Procede de realisation d'un dispositif microelectronique |
US10347423B2 (en) | 2014-05-12 | 2019-07-09 | Capacitor Sciences Incorporated | Solid multilayer structure as semiproduct for meta-capacitor |
US10319523B2 (en) | 2014-05-12 | 2019-06-11 | Capacitor Sciences Incorporated | Yanli dielectric materials and capacitor thereof |
US10340082B2 (en) | 2015-05-12 | 2019-07-02 | Capacitor Sciences Incorporated | Capacitor and method of production thereof |
WO2015175558A2 (en) | 2014-05-12 | 2015-11-19 | Capacitor Sciences Incorporated | Energy storage device and method of production thereof |
US20170301477A1 (en) | 2016-04-04 | 2017-10-19 | Capacitor Sciences Incorporated | Electro-polarizable compound and capacitor |
US9941051B2 (en) | 2015-06-26 | 2018-04-10 | Capactor Sciences Incorporated | Coiled capacitor |
US10636575B2 (en) | 2016-02-12 | 2020-04-28 | Capacitor Sciences Incorporated | Furuta and para-Furuta polymer formulations and capacitors |
US10305295B2 (en) | 2016-02-12 | 2019-05-28 | Capacitor Sciences Incorporated | Energy storage cell, capacitive energy storage module, and capacitive energy storage system |
US10153087B2 (en) | 2016-04-04 | 2018-12-11 | Capacitor Sciences Incorporated | Electro-polarizable compound and capacitor |
US9978517B2 (en) | 2016-04-04 | 2018-05-22 | Capacitor Sciences Incorporated | Electro-polarizable compound and capacitor |
US10566138B2 (en) | 2016-04-04 | 2020-02-18 | Capacitor Sciences Incorporated | Hein electro-polarizable compound and capacitor thereof |
US10395841B2 (en) * | 2016-12-02 | 2019-08-27 | Capacitor Sciences Incorporated | Multilayered electrode and film energy storage device |
CN109473486B (zh) * | 2018-10-18 | 2022-04-15 | 上海华虹宏力半导体制造有限公司 | 一种电容器结构及其制作方法 |
CN111128852B (zh) * | 2018-10-30 | 2023-05-05 | 台湾积体电路制造股份有限公司 | 硅晶绝缘体结构、半导体结构以及形成半导体结构的方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61288460A (ja) * | 1985-06-17 | 1986-12-18 | Nippon Telegr & Teleph Corp <Ntt> | 半導体記憶装置およびその製造方法 |
US4728623A (en) * | 1986-10-03 | 1988-03-01 | International Business Machines Corporation | Fabrication method for forming a self-aligned contact window and connection in an epitaxial layer and device structures employing the method |
JPS63248158A (ja) * | 1987-04-03 | 1988-10-14 | Toshiba Corp | 半導体記憶装置 |
JPS63307775A (ja) * | 1987-06-09 | 1988-12-15 | Nec Corp | キャパシタおよびその製造方法 |
JPH0744226B2 (ja) * | 1988-01-21 | 1995-05-15 | 富士通株式会社 | 半導体装置及びその製造方法 |
JPH01307257A (ja) * | 1988-06-06 | 1989-12-12 | Hitachi Ltd | 半導体記憶装置とその製造方法 |
JPH02198153A (ja) * | 1989-01-27 | 1990-08-06 | Hitachi Ltd | 半導体装置の製造方法 |
EP0479143A1 (de) * | 1990-10-02 | 1992-04-08 | Ramtron International Corporation | Grabenkondensator-DRAM mit Spannungsfeldisolation |
US5064683A (en) * | 1990-10-29 | 1991-11-12 | Motorola, Inc. | Method for polish planarizing a semiconductor substrate by using a boron nitride polish stop |
-
1992
- 1992-07-29 CA CA002074848A patent/CA2074848C/en not_active Expired - Fee Related
-
1993
- 1993-06-21 JP JP17372993A patent/JP3378616B2/ja not_active Expired - Fee Related
- 1993-07-12 EP EP93305443A patent/EP0581475B1/de not_active Expired - Lifetime
- 1993-07-12 DE DE69332427T patent/DE69332427T2/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CA2074848A1 (en) | 1994-01-30 |
CA2074848C (en) | 1998-02-10 |
DE69332427T2 (de) | 2003-03-06 |
EP0581475B1 (de) | 2002-10-23 |
EP0581475A1 (de) | 1994-02-02 |
JP3378616B2 (ja) | 2003-02-17 |
JPH0697385A (ja) | 1994-04-08 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8339 | Ceased/non-payment of the annual fee |