DE69327388D1 - Thyristor und Aufbau von Thyristoren mit gemeinsamer Katode - Google Patents

Thyristor und Aufbau von Thyristoren mit gemeinsamer Katode

Info

Publication number
DE69327388D1
DE69327388D1 DE69327388T DE69327388T DE69327388D1 DE 69327388 D1 DE69327388 D1 DE 69327388D1 DE 69327388 T DE69327388 T DE 69327388T DE 69327388 T DE69327388 T DE 69327388T DE 69327388 D1 DE69327388 D1 DE 69327388D1
Authority
DE
Germany
Prior art keywords
thyristors
thyristor
construction
common cathode
cathode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69327388T
Other languages
English (en)
Other versions
DE69327388T2 (de
Inventor
Robert Pezzani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Application granted granted Critical
Publication of DE69327388D1 publication Critical patent/DE69327388D1/de
Publication of DE69327388T2 publication Critical patent/DE69327388T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42308—Gate electrodes for thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/102—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components
    • H01L27/1027—Thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1012—Base regions of thyristors
    • H01L29/1016—Anode base regions of thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7428—Thyristor-type devices, e.g. having four-zone regenerative action having an amplifying gate structure, e.g. cascade (Darlington) configuration

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Thyristors (AREA)
DE69327388T 1992-10-29 1993-10-25 Thyristor und Aufbau von Thyristoren mit gemeinsamer Katode Expired - Fee Related DE69327388T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9213340A FR2697674B1 (fr) 1992-10-29 1992-10-29 Thyristor et assemblage de thyristors à cathode commune.

Publications (2)

Publication Number Publication Date
DE69327388D1 true DE69327388D1 (de) 2000-01-27
DE69327388T2 DE69327388T2 (de) 2000-05-25

Family

ID=9435267

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69327388T Expired - Fee Related DE69327388T2 (de) 1992-10-29 1993-10-25 Thyristor und Aufbau von Thyristoren mit gemeinsamer Katode

Country Status (5)

Country Link
US (1) US5365086A (de)
EP (1) EP0599739B1 (de)
JP (1) JP3635098B2 (de)
DE (1) DE69327388T2 (de)
FR (1) FR2697674B1 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1995034914A1 (en) * 1994-06-10 1995-12-21 Beacon Light Products, Inc. High temperature, high holding current semiconductor thyristor
EP0697728B1 (de) * 1994-08-02 1999-04-21 STMicroelectronics S.r.l. Leistungshalbleitervorrichtung aus MOS-Technology-Chips und Gehäuseaufbau
FR2726398B1 (fr) * 1994-10-28 1997-01-17 Sgs Thomson Microelectronics Thyristor commandable par des niveaux logiques
FR2729008B1 (fr) 1994-12-30 1997-03-21 Sgs Thomson Microelectronics Circuit integre de puissance
US6411155B2 (en) 1994-12-30 2002-06-25 Sgs-Thomson Microelectronics S.A. Power integrated circuit
FR2734429B1 (fr) * 1995-05-19 1997-08-01 Sgs Thomson Microelectronics Module interrupteur et d'alimentation-application au demarrage d'un tube fluorescent
FR2751133B1 (fr) * 1996-07-12 1998-11-06 Sgs Thomson Microelectronics Assemblage monolithique de thyristors a cathode commune
FR3091021B1 (fr) * 2018-12-20 2021-01-08 St Microelectronics Tours Sas Thyristor vertical
JP7294594B2 (ja) * 2019-06-03 2023-06-20 リテルヒューズ・セミコンダクター・（ウーシー）・カンパニー・リミテッド 集積型マルチデバイスチップおよびパッケージ

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4163241A (en) * 1975-06-13 1979-07-31 Hutson Jearld L Multiple emitter and normal gate semiconductor switch
GB1580490A (en) * 1977-07-04 1980-12-03 Mitsubishi Electric Corp Semiconductor switching device
JPS63182861A (ja) * 1987-01-26 1988-07-28 Toshiba Corp ゼロクロス型サイリスタ
DE3881264T2 (de) * 1987-03-31 1993-11-25 Toshiba Kawasaki Kk Gate-steuerbare bilaterale Halbleiterschaltungsanordnung.
JPH01286465A (ja) * 1988-05-13 1989-11-17 Toshiba Corp 双方向制御整流半導体装置

Also Published As

Publication number Publication date
DE69327388T2 (de) 2000-05-25
US5365086A (en) 1994-11-15
EP0599739B1 (de) 1999-12-22
JPH06204462A (ja) 1994-07-22
FR2697674A1 (fr) 1994-05-06
EP0599739A1 (de) 1994-06-01
FR2697674B1 (fr) 1995-01-13
JP3635098B2 (ja) 2005-03-30

Similar Documents

Publication Publication Date Title
DE3665240D1 (en) Semiconductor device with structures of thyristors and diodes
DE68926865D1 (de) Schaltsystem mit Begrenzungsfunktion von Ausgangsanrufen
DE69225214D1 (de) Temporaere weg-lenkung von nachrichten und zielwahl
DE69505633D1 (de) Gleichrichterbrückenschaltung mit aktiven schaltern und einer aktiven steuerschaltung
DE69320556D1 (de) Carbonylierung von Epoxyden
DE3789343D1 (de) Lichthärtbare Mischungen auf der Basis von 2-Methoxytetrahydropyran und cykloaliphatischen Epoxyden.
DE3856423D1 (de) Anrufbearbeitung mit Wechselwirkung
DE3486025D1 (de) Interpolymere von aethylen und ungesaettigten saeuren.
DE69332185D1 (de) Bildung und Aufrechterhaltung von Zugriffsgruppen an der Lan/Wan Schnittstelle
EP0480356A3 (en) Mos-controlled thyristor and method of making the same
DE69332969T2 (de) Anordnungen von supraleitenden Magneten
DE3579453D1 (de) Monolithische integration von lichtemittierenden elementen und steuerelektronik.
DE59302386D1 (de) Verwendung von polykondensaten und neue polykondensate
DE69327388D1 (de) Thyristor und Aufbau von Thyristoren mit gemeinsamer Katode
DE59309712D1 (de) Thyristor mit Durchbruchbereich
DE3856164D1 (de) Thyristor mit reduzierter Kippspannung
DE69206920D1 (de) Untereutektische Aluminium-Silizium-Legierung mit Zusätzen von Wismut und Zinn
DE3674176D1 (de) Schrank von besonders leichtem und steifem bau.
DE69223390D1 (de) Statischer Induktionsthyristor mit MOS
DE69731333D1 (de) Monolithische Montage von Thyristoren mit gemeinsamer Kathode
DE69310737D1 (de) Azeotropische zusammensetzungen auf basis von perfluorethan und trifluormethan
PT81848A (de) Synergistische kombination von flupirtin und 4-acetamido-phenol
DE69333544D1 (de) Statischer Induktionsthyristor
DE69319465D1 (de) Gate-Turn-Off-Thyristor und dessen Verwendung in Leistungwandlern
DE59306018D1 (de) GTO-Thyristor

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee