DE69325645T2 - Integrierte Schutzschaltungsstruktur zum Schutz von logischen MOS-Leistungshalbleitenbauelementen von elektrostatischen Entladungen - Google Patents

Integrierte Schutzschaltungsstruktur zum Schutz von logischen MOS-Leistungshalbleitenbauelementen von elektrostatischen Entladungen

Info

Publication number
DE69325645T2
DE69325645T2 DE69325645T DE69325645T DE69325645T2 DE 69325645 T2 DE69325645 T2 DE 69325645T2 DE 69325645 T DE69325645 T DE 69325645T DE 69325645 T DE69325645 T DE 69325645T DE 69325645 T2 DE69325645 T2 DE 69325645T2
Authority
DE
Germany
Prior art keywords
protection
power semiconductor
circuit structure
semiconductor components
mos power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69325645T
Other languages
English (en)
Other versions
DE69325645D1 (de
Inventor
Raffaele Zambrano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CORIMME Consorzio per Ricerca Sulla Microelettronica nel Mezzogiorno
Original Assignee
CORIMME Consorzio per Ricerca Sulla Microelettronica nel Mezzogiorno
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CORIMME Consorzio per Ricerca Sulla Microelettronica nel Mezzogiorno filed Critical CORIMME Consorzio per Ricerca Sulla Microelettronica nel Mezzogiorno
Publication of DE69325645D1 publication Critical patent/DE69325645D1/de
Application granted granted Critical
Publication of DE69325645T2 publication Critical patent/DE69325645T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
    • H01L29/7804—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device the other device being a pn-junction diode
DE69325645T 1993-04-21 1993-04-21 Integrierte Schutzschaltungsstruktur zum Schutz von logischen MOS-Leistungshalbleitenbauelementen von elektrostatischen Entladungen Expired - Fee Related DE69325645T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP93830169A EP0621636B1 (de) 1993-04-21 1993-04-21 Integrierte Schutzschaltungsstruktur zum Schutz von logischen MOS-Leistungshalbleitenbauelementen von elektrostatischen Entladungen

Publications (2)

Publication Number Publication Date
DE69325645D1 DE69325645D1 (de) 1999-08-19
DE69325645T2 true DE69325645T2 (de) 1999-12-09

Family

ID=8215150

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69325645T Expired - Fee Related DE69325645T2 (de) 1993-04-21 1993-04-21 Integrierte Schutzschaltungsstruktur zum Schutz von logischen MOS-Leistungshalbleitenbauelementen von elektrostatischen Entladungen

Country Status (4)

Country Link
US (1) US5426320A (de)
EP (1) EP0621636B1 (de)
JP (1) JPH0715006A (de)
DE (1) DE69325645T2 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0690509A1 (de) * 1994-06-30 1996-01-03 Texas Instruments Incorporated Substratanschluss für eine Gate-Array-Basiszelle und Verfahren zu ihrer Herstellung
DE19502117C2 (de) * 1995-01-24 2003-03-20 Infineon Technologies Ag Schutzanordnung gegen elektrostatische Entladungen in mit Feldeffekt steuerbaren Halbleiterbauelementen
US5798554A (en) * 1995-02-24 1998-08-25 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno MOS-technology power device integrated structure and manufacturing process thereof
EP0768714B1 (de) * 1995-10-09 2003-09-17 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno - CoRiMMe Herstellungsverfahren für Leistungsanordnung mit Schutzring
EP0772242B1 (de) * 1995-10-30 2006-04-05 STMicroelectronics S.r.l. Leistungsbauteil in MOS-Technologie mit einer einzelnen kritischen Grösse
EP0772241B1 (de) * 1995-10-30 2004-06-09 STMicroelectronics S.r.l. Leistungsbauteil hoher Dichte in MOS-Technologie
US6228719B1 (en) 1995-11-06 2001-05-08 Stmicroelectronics S.R.L. MOS technology power device with low output resistance and low capacitance, and related manufacturing process
US5744840A (en) * 1995-11-20 1998-04-28 Ng; Kwok Kwok Electrostatic protection devices for protecting semiconductor integrated circuitry
EP0782201B1 (de) * 1995-12-28 2000-08-30 STMicroelectronics S.r.l. MOS-Technologie-Leistungsanordnung in integrierter Struktur
US6043126A (en) * 1996-10-25 2000-03-28 International Rectifier Corporation Process for manufacture of MOS gated device with self aligned cells
US5966517A (en) 1996-11-01 1999-10-12 Motorola, Inc. Semiconductor device using diode place-holders and method of manufacture thereof
EP0961325B1 (de) 1998-05-26 2008-05-07 STMicroelectronics S.r.l. MOS-Technologie-Leistungsanordnung mit hoher Integrationsdichte
US6137143A (en) * 1998-06-30 2000-10-24 Intel Corporation Diode and transistor design for high speed I/O
KR100505619B1 (ko) * 1998-09-29 2005-09-26 삼성전자주식회사 반도체소자의정전하방전회로,그구조체및그구조체의제조방법
JP4088063B2 (ja) * 2001-11-14 2008-05-21 株式会社東芝 パワーｍｏｓｆｅｔ装置
JP2005183408A (ja) * 2003-12-15 2005-07-07 Seiko Epson Corp 電気光学装置、その駆動回路および電子機器
US7119401B2 (en) * 2004-01-07 2006-10-10 International Business Machines Corporation Tunable semiconductor diodes
CN100369252C (zh) * 2006-02-13 2008-02-13 友达光电股份有限公司 静电放电保护电路
DE102012102788A1 (de) * 2012-03-30 2013-10-02 Zf Lenksysteme Gmbh SPERRSCHICHTTEMPERATURMESSUNG EINES LEISTUNGS-MOSFETs
RU2585882C2 (ru) * 2013-07-18 2016-06-10 Открытое акционерное общество "АНГСТРЕМ" Устройство защиты от разрядов статического электричества выводов питания комплементарных моп (металл-окисел-полупроводник) интегральных схем на кремниевых пластинах с проводимостью n-типа
EP4036990A1 (de) * 2017-11-13 2022-08-03 Shindengen Electric Manufacturing Co., Ltd. Halbleiterbauelement mit breiter lücke

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3999212A (en) * 1967-03-03 1976-12-21 Hitachi, Ltd. Field effect semiconductor device having a protective diode
JPS52132684A (en) * 1976-04-29 1977-11-07 Sony Corp Insulating gate type field effect transistor
JPS5821374A (ja) * 1981-07-29 1983-02-08 Toshiba Corp 半導体装置
JPS5858769A (ja) * 1981-10-05 1983-04-07 Nec Corp 静電破壊防止保護ダイオ−ド
JPH0691206B2 (ja) * 1984-12-28 1994-11-14 株式会社東芝 半導体装置
JPS61296770A (ja) * 1985-06-25 1986-12-27 Nec Corp 絶縁ゲ−ト電界効果型半導体装置
JPS62211954A (ja) * 1986-03-13 1987-09-17 Matsushita Electronics Corp 半導体装置
JPS63265470A (ja) * 1987-04-23 1988-11-01 Matsushita Electronics Corp 半導体装置
JPH081956B2 (ja) * 1987-11-06 1996-01-10 日産自動車株式会社 保護機能を備えた縦型ｍｏｓｆｅｔ
US4890143A (en) * 1988-07-28 1989-12-26 General Electric Company Protective clamp for MOS gated devices
FR2649828B1 (fr) * 1989-07-17 1991-10-31 Sgs Thomson Microelectronics Circuit integre vdmos/logique comprenant un transistor vertical deplete et une diode zener
JP3064457B2 (ja) * 1991-03-08 2000-07-12 関西日本電気株式会社 スイッチ回路およびゲート電圧クランプ型半導体装置

Also Published As

Publication number Publication date
EP0621636B1 (de) 1999-07-14
EP0621636A1 (de) 1994-10-26
DE69325645D1 (de) 1999-08-19
JPH0715006A (ja) 1995-01-17
US5426320A (en) 1995-06-20

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee