ITMI950207A0 - Circuito di protezione contro scariche elettrostatiche particolarmente per circuiti integrati - Google Patents

Circuito di protezione contro scariche elettrostatiche particolarmente per circuiti integrati

Info

Publication number
ITMI950207A0
ITMI950207A0 ITMI950207A ITMI950207A ITMI950207A0 IT MI950207 A0 ITMI950207 A0 IT MI950207A0 IT MI950207 A ITMI950207 A IT MI950207A IT MI950207 A ITMI950207 A IT MI950207A IT MI950207 A0 ITMI950207 A0 IT MI950207A0
Authority
IT
Italy
Prior art keywords
integrated circuits
protection circuit
against electrostatic
circuit against
electrostatic discharges
Prior art date
Application number
ITMI950207A
Other languages
English (en)
Inventor
Jonathan H Orchard-Webb
Original Assignee
Mitel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitel Corp filed Critical Mitel Corp
Publication of ITMI950207A0 publication Critical patent/ITMI950207A0/it
Publication of ITMI950207A1 publication Critical patent/ITMI950207A1/it
Application granted granted Critical
Publication of IT1275216B publication Critical patent/IT1275216B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
ITMI950207A 1994-02-08 1995-02-06 Circuito di protezione contro scariche elettrostatiche particolarmente per circuiti integrati IT1275216B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CA002115230A CA2115230A1 (en) 1994-02-08 1994-02-08 Esd protection circuit

Publications (3)

Publication Number Publication Date
ITMI950207A0 true ITMI950207A0 (it) 1995-02-06
ITMI950207A1 ITMI950207A1 (it) 1996-08-06
IT1275216B IT1275216B (it) 1997-07-31

Family

ID=4152880

Family Applications (1)

Application Number Title Priority Date Filing Date
ITMI950207A IT1275216B (it) 1994-02-08 1995-02-06 Circuito di protezione contro scariche elettrostatiche particolarmente per circuiti integrati

Country Status (7)

Country Link
US (1) US5568346A (it)
JP (1) JPH0846132A (it)
CA (1) CA2115230A1 (it)
DE (1) DE19504752A1 (it)
FR (1) FR2718569B1 (it)
GB (1) GB2286289B (it)
IT (1) IT1275216B (it)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW289153B (it) * 1994-09-26 1996-10-21 Ibm
US5721658A (en) * 1996-04-01 1998-02-24 Micron Technology, Inc. Input/output electrostatic discharge protection for devices with multiple individual power groups
GB2334633B (en) * 1998-02-21 2002-09-25 Mitel Corp Low leakage electrostatic discharge protection system
US6157530A (en) * 1999-01-04 2000-12-05 International Business Machines Corporation Method and apparatus for providing ESD protection
US6933610B2 (en) * 2002-02-20 2005-08-23 Silicon Pipe, Inc. Method of bonding a semiconductor die without an ESD circuit and a separate ESD circuit to an external lead, and a semiconductor device made thereby
US7102867B2 (en) 2003-06-30 2006-09-05 International Business Machines Corporation Method, apparatus and circuit for latchup suppression in a gate-array ASIC environment
US6963112B2 (en) * 2004-01-09 2005-11-08 Taiwan Semiconductor Manufacturing Co., Ltd. Electrostatic discharge protection circuit with a diode string
US20050237682A1 (en) * 2004-04-26 2005-10-27 Taiwan Semiconductor Manufacturing Co. Novel ESD protection scheme for core devices
DE102006049740A1 (de) * 2006-10-21 2008-04-24 Atmel Germany Gmbh Halbleiterbauelement
KR101626527B1 (ko) 2008-11-04 2016-06-13 삼성전자주식회사 데이터 입출력 패드들의 기생 저항을 보정하는 드라이버를 갖는 반도체 메모리 장치

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4066918A (en) * 1976-09-30 1978-01-03 Rca Corporation Protection circuitry for insulated-gate field-effect transistor (IGFET) circuits
EP0148577A1 (en) * 1983-11-14 1985-07-17 General Semiconductor Industries Inc. Overvoltage protection device
US4736271A (en) * 1987-06-23 1988-04-05 Signetics Corporation Protection device utilizing one or more subsurface diodes and associated method of manufacture
US5189588A (en) * 1989-03-15 1993-02-23 Matsushita Electric Industrial Co., Ltd. Surge protection apparatus
US5287241A (en) * 1992-02-04 1994-02-15 Cirrus Logic, Inc. Shunt circuit for electrostatic discharge protection
US5272097A (en) * 1992-04-07 1993-12-21 Philip Shiota Method for fabricating diodes for electrostatic discharge protection and voltage references

Also Published As

Publication number Publication date
FR2718569B1 (fr) 1998-02-20
IT1275216B (it) 1997-07-31
GB9501957D0 (en) 1995-03-22
US5568346A (en) 1996-10-22
GB2286289B (en) 1998-01-14
DE19504752A1 (de) 1995-08-24
GB2286289A (en) 1995-08-09
FR2718569A1 (fr) 1995-10-13
CA2115230A1 (en) 1995-08-09
ITMI950207A1 (it) 1996-08-06
JPH0846132A (ja) 1996-02-16

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Legal Events

Date Code Title Description
0001 Granted