DE69324045D1 - Verfahren zur chemischen oberflaechenpassivierung fuer die in-situ-volume-lebensdauermessung von silizium-halbleiter-material - Google Patents
Verfahren zur chemischen oberflaechenpassivierung fuer die in-situ-volume-lebensdauermessung von silizium-halbleiter-materialInfo
- Publication number
- DE69324045D1 DE69324045D1 DE69324045T DE69324045T DE69324045D1 DE 69324045 D1 DE69324045 D1 DE 69324045D1 DE 69324045 T DE69324045 T DE 69324045T DE 69324045 T DE69324045 T DE 69324045T DE 69324045 D1 DE69324045 D1 DE 69324045D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor material
- silicon semiconductor
- surface passivation
- chemical surface
- lifetime measurement
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 238000011065 in-situ storage Methods 0.000 title 1
- 239000000463 material Substances 0.000 title 1
- 238000005259 measurement Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 238000002161 passivation Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
- 239000000126 substance Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N22/00—Investigating or analysing materials by the use of microwaves or radio waves, i.e. electromagnetic waves with a wavelength of one millimetre or more
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Pathology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Immunology (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- General Health & Medical Sciences (AREA)
- Biochemistry (AREA)
- Analytical Chemistry (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US07/991,126 US5580828A (en) | 1992-12-16 | 1992-12-16 | Method for chemical surface passivation for in-situ bulk lifetime measurement of silicon semiconductor material |
| PCT/HU1993/000071 WO1994014188A1 (en) | 1992-12-16 | 1993-12-16 | Method for chemical surface passivation for in-situ bulk lifetime measurement of silicon semiconductor material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69324045D1 true DE69324045D1 (de) | 1999-04-22 |
| DE69324045T2 DE69324045T2 (de) | 1999-11-18 |
Family
ID=25536905
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69324045T Expired - Lifetime DE69324045T2 (de) | 1992-12-16 | 1993-12-16 | Verfahren zur chemischen oberflaechenpassivierung fuer die in-situ-volume-lebensdauermessung von silizium-halbleiter-material |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US5580828A (de) |
| EP (1) | EP0680662B1 (de) |
| DE (1) | DE69324045T2 (de) |
| HU (1) | HU9501765D0 (de) |
| WO (1) | WO1994014188A1 (de) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4432294A1 (de) * | 1994-09-12 | 1996-03-14 | Telefunken Microelectron | Verfahren zur Reduzierung der Oberflächenrekombinationsgeschwindigkeit in Silizium |
| JP3670051B2 (ja) * | 1995-06-06 | 2005-07-13 | 株式会社神戸製鋼所 | 半導体試料のキャリアのライフタイム測定方法及びその装置 |
| US6127280A (en) * | 1998-05-26 | 2000-10-03 | The United States Of America As Represented By The Secretary Of The Air Force | Photoelectrochemical capacitance-voltage measurements of wide bandgap semiconductors |
| HU227170B1 (en) * | 2000-02-17 | 2010-09-28 | Semilab Felvezetoe Fiz Lab Rt | Surface passivation method and arrangement for measuring life time of minority carrier of semiconductors |
| US6368963B1 (en) | 2000-09-12 | 2002-04-09 | Advanced Micro Devices, Inc. | Passivation of semiconductor device surfaces using an iodine/ethanol solution |
| KR20030052462A (ko) * | 2001-12-21 | 2003-06-27 | 주식회사 실트론 | 실리콘 웨이퍼의 라이프 타임 측정방법 |
| CN100561683C (zh) * | 2007-11-16 | 2009-11-18 | 中国科学院电工研究所 | 一种测量晶体硅体少子寿命的化学钝化方法 |
| US7901974B2 (en) | 2008-02-08 | 2011-03-08 | Omnivision Technologies, Inc. | Masked laser anneal during fabrication of backside illuminated image sensors |
| US7952096B2 (en) | 2008-12-08 | 2011-05-31 | Omnivision Technologies, Inc. | CMOS image sensor with improved backside surface treatment |
| US8278690B2 (en) | 2010-04-27 | 2012-10-02 | Omnivision Technologies, Inc. | Laser anneal for image sensors |
| JP5350345B2 (ja) * | 2010-09-22 | 2013-11-27 | 株式会社神戸製鋼所 | 薄膜半導体の結晶性評価装置および方法 |
| CN102866335A (zh) * | 2011-07-05 | 2013-01-09 | 上海申和热磁电子有限公司 | 少子寿命扫描法测试直拉单晶硅中的氧化诱生层错的方法 |
| CN102313865A (zh) * | 2011-07-20 | 2012-01-11 | 浙江尖山光电股份有限公司 | 一种黑心硅片的快速检测方法 |
| CN102856432A (zh) * | 2012-08-12 | 2013-01-02 | 安阳市凤凰光伏科技有限公司 | 硅片表面钝化方法 |
| FR3000549B1 (fr) | 2012-12-27 | 2015-04-24 | Centre Nat Rech Scient | Procede et dispositif pour caracteriser un milieu fluide a l'aide d'un substrat semi-conducteur |
| JP6076814B2 (ja) * | 2013-04-19 | 2017-02-08 | 信越化学工業株式会社 | 太陽電池の製造方法 |
| CN105826160A (zh) * | 2015-01-05 | 2016-08-03 | 西安隆基硅材料股份有限公司 | 用于晶体硅体寿命测试的表面处理方法 |
| JP6957134B2 (ja) * | 2016-07-21 | 2021-11-02 | 株式会社半導体エネルギー研究所 | 酸化物半導体の評価方法 |
| CN107591340A (zh) * | 2017-08-01 | 2018-01-16 | 惠科股份有限公司 | 一种半导体的测试方法和测试装置 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL6807368A (de) * | 1967-07-05 | 1969-01-07 | ||
| US3684592A (en) * | 1969-09-30 | 1972-08-15 | Westinghouse Electric Corp | Passivated surfaces and protective coatings for semiconductor devices and processes for producing the same |
| HU167114B (de) * | 1973-07-24 | 1975-08-28 | ||
| JPS5236817B2 (de) * | 1973-07-27 | 1977-09-19 | ||
| DE2538450A1 (de) * | 1975-08-29 | 1977-03-10 | Licentia Gmbh | Verfahren zum aetzen von polykristallinem silizium |
| DE3805752A1 (de) * | 1988-02-24 | 1989-08-31 | Fraunhofer Ges Forschung | Anisotropes aetzverfahren mit elektrochemischem aetzstop |
| DE3823765A1 (de) * | 1988-07-13 | 1990-01-18 | Wacker Chemitronic | Verfahren zur konservierung der oberflaeche von siliciumscheiben |
| FI97920C (fi) * | 1991-02-27 | 1997-03-10 | Okmetic Oy | Tapa puhdistaa puolijohdevalmiste |
-
1992
- 1992-12-16 US US07/991,126 patent/US5580828A/en not_active Expired - Fee Related
-
1993
- 1993-12-16 DE DE69324045T patent/DE69324045T2/de not_active Expired - Lifetime
- 1993-12-16 HU HU9501765A patent/HU9501765D0/hu unknown
- 1993-12-16 WO PCT/HU1993/000071 patent/WO1994014188A1/en active IP Right Grant
- 1993-12-16 EP EP94902993A patent/EP0680662B1/de not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| HU9501765D0 (en) | 1995-08-28 |
| US5580828A (en) | 1996-12-03 |
| DE69324045T2 (de) | 1999-11-18 |
| EP0680662A1 (de) | 1995-11-08 |
| WO1994014188A1 (en) | 1994-06-23 |
| EP0680662B1 (de) | 1999-03-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition |