DE69323386D1 - Halbleiterspeicheranordnung - Google Patents

Halbleiterspeicheranordnung

Info

Publication number
DE69323386D1
DE69323386D1 DE69323386T DE69323386T DE69323386D1 DE 69323386 D1 DE69323386 D1 DE 69323386D1 DE 69323386 T DE69323386 T DE 69323386T DE 69323386 T DE69323386 T DE 69323386T DE 69323386 D1 DE69323386 D1 DE 69323386D1
Authority
DE
Germany
Prior art keywords
memory device
semiconductor memory
semiconductor
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69323386T
Other languages
English (en)
Other versions
DE69323386T2 (de
Inventor
Sumio Ogawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP4313028A external-priority patent/JP2817552B2/ja
Application filed by NEC Corp filed Critical NEC Corp
Publication of DE69323386D1 publication Critical patent/DE69323386D1/de
Application granted granted Critical
Publication of DE69323386T2 publication Critical patent/DE69323386T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4097—Bit-line organisation, e.g. bit-line layout, folded bit lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/14—Dummy cell management; Sense reference voltage generators
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4099—Dummy cell treatment; Reference voltage generators
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/18—Bit line organisation; Bit line lay-out
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
DE69323386T 1992-10-28 1993-10-28 Halbleiterspeicheranordnung Expired - Fee Related DE69323386T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4313028A JP2817552B2 (ja) 1992-01-30 1992-10-28 半導体メモリ装置

Publications (2)

Publication Number Publication Date
DE69323386D1 true DE69323386D1 (de) 1999-03-18
DE69323386T2 DE69323386T2 (de) 1999-06-10

Family

ID=18036351

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69323386T Expired - Fee Related DE69323386T2 (de) 1992-10-28 1993-10-28 Halbleiterspeicheranordnung

Country Status (3)

Country Link
EP (1) EP0595329B1 (de)
KR (1) KR970006599B1 (de)
DE (1) DE69323386T2 (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102677515B1 (ko) * 2016-12-14 2024-06-21 삼성전자주식회사 더미 셀을 가지는 불휘발성 메모리 장치 및 이를 포함하는 메모리 시스템

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4669063A (en) * 1982-12-30 1987-05-26 Thomson Components-Mostek Corp. Sense amplifier for a dynamic RAM
JPS60177495A (ja) * 1984-02-22 1985-09-11 Nec Corp 半導体メモリ装置
US4853897A (en) * 1986-12-10 1989-08-01 Kabushiki Kaisha Toshiba Complementary semiconductor memory device
JPH03117113A (ja) * 1989-09-29 1991-05-17 Hitachi Ltd 半導体集積回路装置

Also Published As

Publication number Publication date
KR940010091A (ko) 1994-05-24
DE69323386T2 (de) 1999-06-10
EP0595329A3 (de) 1994-11-02
EP0595329B1 (de) 1999-02-03
EP0595329A2 (de) 1994-05-04
KR970006599B1 (ko) 1997-04-29

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee