DE69322599D1 - Takttreiber für Leseverstärker - Google Patents

Takttreiber für Leseverstärker

Info

Publication number
DE69322599D1
DE69322599D1 DE69322599T DE69322599T DE69322599D1 DE 69322599 D1 DE69322599 D1 DE 69322599D1 DE 69322599 T DE69322599 T DE 69322599T DE 69322599 T DE69322599 T DE 69322599T DE 69322599 D1 DE69322599 D1 DE 69322599D1
Authority
DE
Germany
Prior art keywords
sense amplifiers
clock drivers
drivers
clock
amplifiers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69322599T
Other languages
English (en)
Other versions
DE69322599T2 (de
Inventor
Kim C Hardee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
UMC Japan Co Ltd
United Memories Inc
Original Assignee
Nippon Steel Semiconductor Corp
United Memories Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Steel Semiconductor Corp, United Memories Inc filed Critical Nippon Steel Semiconductor Corp
Publication of DE69322599D1 publication Critical patent/DE69322599D1/de
Application granted granted Critical
Publication of DE69322599T2 publication Critical patent/DE69322599T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/065—Differential amplifiers of latching type
DE69322599T 1992-10-30 1993-09-30 Takttreiber für Leseverstärker Expired - Fee Related DE69322599T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/969,418 US5334890A (en) 1992-10-30 1992-10-30 Sense amplifier clock driver

Publications (2)

Publication Number Publication Date
DE69322599D1 true DE69322599D1 (de) 1999-01-28
DE69322599T2 DE69322599T2 (de) 1999-08-12

Family

ID=25515537

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69322599T Expired - Fee Related DE69322599T2 (de) 1992-10-30 1993-09-30 Takttreiber für Leseverstärker

Country Status (4)

Country Link
US (1) US5334890A (de)
EP (1) EP0595050B1 (de)
JP (1) JP3293984B2 (de)
DE (1) DE69322599T2 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3302734B2 (ja) * 1992-09-16 2002-07-15 株式会社東芝 半導体記憶装置
KR960001860B1 (ko) * 1993-06-05 1996-02-06 삼성전자주식회사 반도체집적회로의 데이타 입출력선 센싱회로
KR960009956B1 (ko) * 1994-02-16 1996-07-25 현대전자산업 주식회사 반도체 소자의 감지 증폭기
KR0121137B1 (ko) * 1994-12-31 1997-12-04 문정환 센스 앰프의 구동 신호 발생 회로
KR0155617B1 (ko) * 1995-09-15 1998-12-01 문정환 전원선 공유 센스 앰프
KR0167295B1 (ko) * 1995-12-16 1999-02-01 문정환 저전력용 센스앰프회로
US5973975A (en) * 1998-07-29 1999-10-26 Micron Technology, Inc. Method and circuit for sharing sense amplifier drivers
US6195302B1 (en) 1999-02-05 2001-02-27 United Memories, Inc. Dual slope sense clock generator
US6300810B1 (en) * 1999-02-05 2001-10-09 United Microelectronics, Corp. Voltage down converter with switched hysteresis
US6285242B1 (en) * 1999-02-05 2001-09-04 United Microelectronics Corporation Reference voltage shifter
US6791370B1 (en) * 1999-07-16 2004-09-14 Micron Technology, Inc. Apparatus and method for adjusting clock skew
US7339822B2 (en) * 2002-12-06 2008-03-04 Sandisk Corporation Current-limited latch
DE10339894B4 (de) * 2003-08-29 2006-04-06 Infineon Technologies Ag Leseverstärker-Zuschalt/Abschalt-Schaltungsanordnung
KR100656431B1 (ko) * 2005-11-09 2006-12-11 주식회사 하이닉스반도체 트랜지스터를 이용한 온도 감지 장치
KR102387462B1 (ko) * 2017-09-27 2022-04-15 삼성전자주식회사 센싱 동작을 일정하게 제어할 수 있는 비트라인 센스앰프를 포함하는 메모리 장치

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4740921A (en) * 1985-10-04 1988-04-26 Motorola, Inc. Precharge of a dram data line to an intermediate voltage
FR2662844B1 (fr) * 1990-05-23 1993-11-26 Samsung Electronics Co Ltd Circuit d'attaque d'amplification de detection pour dispositif de memoire a semi-conducteurs.
EP0461313B1 (de) * 1990-06-12 1996-09-18 Fujitsu Limited Dynamische Speichereinrichtung mit wahlfreiem Zugriff
US5111064A (en) * 1990-09-05 1992-05-05 Vlsi Technology, Inc. Slow ramp high drive output pad
US5140191A (en) * 1990-11-05 1992-08-18 Molorola, Inc. Low di/dt BiCMOS output buffer with improved speed

Also Published As

Publication number Publication date
US5334890A (en) 1994-08-02
JPH06203562A (ja) 1994-07-22
EP0595050A3 (de) 1994-10-26
EP0595050B1 (de) 1998-12-16
JP3293984B2 (ja) 2002-06-17
EP0595050A2 (de) 1994-05-04
DE69322599T2 (de) 1999-08-12

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee