DE69320210D1 - Einkristallines silizium auf quarz - Google Patents

Einkristallines silizium auf quarz

Info

Publication number
DE69320210D1
DE69320210D1 DE69320210T DE69320210T DE69320210D1 DE 69320210 D1 DE69320210 D1 DE 69320210D1 DE 69320210 T DE69320210 T DE 69320210T DE 69320210 T DE69320210 T DE 69320210T DE 69320210 D1 DE69320210 D1 DE 69320210D1
Authority
DE
Germany
Prior art keywords
quartz
single crystal
crystal silicon
silicon
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69320210T
Other languages
English (en)
Other versions
DE69320210T2 (de
Inventor
Kalluri R Sarma
Charles S Chanley
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honeywell Inc
Original Assignee
Honeywell Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell Inc filed Critical Honeywell Inc
Application granted granted Critical
Publication of DE69320210D1 publication Critical patent/DE69320210D1/de
Publication of DE69320210T2 publication Critical patent/DE69320210T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
    • H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/764—Air gaps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H01L21/76275—Vertical isolation by bonding techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H01L21/76289—Lateral isolation by air gap
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/012—Bonding, e.g. electrostatic for strain gauges
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/135—Removal of substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/15—Silicon on sapphire SOS
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/977—Thinning or removal of substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
DE69320210T 1992-12-29 1993-08-30 Einkristallines silizium auf quarz Expired - Fee Related DE69320210T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/998,968 US5258323A (en) 1992-12-29 1992-12-29 Single crystal silicon on quartz
PCT/US1993/008172 WO1994015356A1 (en) 1992-12-29 1993-08-30 Single crystal silicon on quartz

Publications (2)

Publication Number Publication Date
DE69320210D1 true DE69320210D1 (de) 1998-09-10
DE69320210T2 DE69320210T2 (de) 1999-02-11

Family

ID=25545722

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69320210T Expired - Fee Related DE69320210T2 (de) 1992-12-29 1993-08-30 Einkristallines silizium auf quarz

Country Status (9)

Country Link
US (1) US5258323A (de)
EP (1) EP0677207B1 (de)
JP (1) JP3584035B2 (de)
KR (1) KR100275828B1 (de)
DE (1) DE69320210T2 (de)
FI (1) FI953159A0 (de)
RU (1) RU2121733C1 (de)
TW (1) TW295674B (de)
WO (1) WO1994015356A1 (de)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0604231B8 (de) * 1992-12-25 2001-04-11 Canon Kabushiki Kaisha Halbleitervorrichtung für Flüssigkristall-Anzeigevorrichtung und Verfahren zu ihrer Herstellung
US5344524A (en) * 1993-06-30 1994-09-06 Honeywell Inc. SOI substrate fabrication
US5719065A (en) 1993-10-01 1998-02-17 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device with removable spacers
WO1995018463A1 (en) * 1993-12-30 1995-07-06 Honeywell Inc. Single crystal silicon on quartz
US5642129A (en) * 1994-03-23 1997-06-24 Kopin Corporation Color sequential display panels
US5536950A (en) * 1994-10-28 1996-07-16 Honeywell Inc. High resolution active matrix LCD cell design
US5668045A (en) * 1994-11-30 1997-09-16 Sibond, L.L.C. Process for stripping outer edge of BESOI wafers
US5494849A (en) * 1995-03-23 1996-02-27 Si Bond L.L.C. Single-etch stop process for the manufacture of silicon-on-insulator substrates
US5937312A (en) * 1995-03-23 1999-08-10 Sibond L.L.C. Single-etch stop process for the manufacture of silicon-on-insulator wafers
JPH08274285A (ja) * 1995-03-29 1996-10-18 Komatsu Electron Metals Co Ltd Ｓｏｉ基板及びその製造方法
US5688415A (en) * 1995-05-30 1997-11-18 Ipec Precision, Inc. Localized plasma assisted chemical etching through a mask
JPH0964321A (ja) * 1995-08-24 1997-03-07 Komatsu Electron Metals Co Ltd Ｓｏｉ基板の製造方法
TW374196B (en) * 1996-02-23 1999-11-11 Semiconductor Energy Lab Co Ltd Semiconductor thin film and method for manufacturing the same and semiconductor device and method for manufacturing the same
US6612022B1 (en) * 1996-05-03 2003-09-02 Invensys Systems, Inc. Printed circuit board including removable auxiliary area with test points
US5754013A (en) * 1996-12-30 1998-05-19 Honeywell Inc. Apparatus for providing a nonlinear output in response to a linear input by using linear approximation and for use in a lighting control system
US6686623B2 (en) 1997-11-18 2004-02-03 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile memory and electronic apparatus
JPH11204452A (ja) 1998-01-13 1999-07-30 Mitsubishi Electric Corp 半導体基板の処理方法および半導体基板
JP2000012864A (ja) 1998-06-22 2000-01-14 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
US6271101B1 (en) 1998-07-29 2001-08-07 Semiconductor Energy Laboratory Co., Ltd. Process for production of SOI substrate and process for production of semiconductor device
JP4476390B2 (ja) 1998-09-04 2010-06-09 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6087236A (en) 1998-11-24 2000-07-11 Intel Corporation Integrated circuit with multiple gate dielectric structures
US7245018B1 (en) * 1999-06-22 2007-07-17 Semiconductor Energy Laboratory Co., Ltd. Wiring material, semiconductor device provided with a wiring using the wiring material and method of manufacturing thereof
DE10139056B4 (de) * 2001-08-08 2005-04-21 Infineon Technologies Ag Verfahren zum Dünnen eines scheibenförmigen Gegenstands sowie zur Herstellung eines beidseitig strukturierten Halbleiterbauelements
JP4653374B2 (ja) * 2001-08-23 2011-03-16 セイコーエプソン株式会社 電気光学装置の製造方法
TW200535758A (en) * 2004-04-23 2005-11-01 Innolux Display Corp A low temperature poly-silicon driver circuit display panel and fabricating method thereof
KR101140450B1 (ko) 2004-08-18 2012-04-30 코닝 인코포레이티드 변형된 반도체-온-절연체 구조 및 변형된 반도체-온-절연체구조의 제조방법
FR2880184B1 (fr) * 2004-12-28 2007-03-30 Commissariat Energie Atomique Procede de detourage d'une structure obtenue par assemblage de deux plaques
EP1987539B1 (de) * 2006-02-10 2016-05-25 Philips Intellectual Property & Standards GmbH Lichtemittierende vorrichtung
KR20130141465A (ko) * 2011-02-15 2013-12-26 스미토모덴키고교가부시키가이샤 보호막 부착 복합 기판 및 반도체 디바이스의 제조 방법

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4601779A (en) * 1985-06-24 1986-07-22 International Business Machines Corporation Method of producing a thin silicon-on-insulator layer
JPH0269938A (ja) * 1988-09-05 1990-03-08 Nec Corp 半導体装置の製造方法
JP2645478B2 (ja) * 1988-10-07 1997-08-25 富士通株式会社 半導体装置の製造方法
JPH0636414B2 (ja) * 1989-08-17 1994-05-11 信越半導体株式会社 半導体素子形成用基板の製造方法
US5013681A (en) * 1989-09-29 1991-05-07 The United States Of America As Represented By The Secretary Of The Navy Method of producing a thin silicon-on-insulator layer
JPH0636413B2 (ja) * 1990-03-29 1994-05-11 信越半導体株式会社 半導体素子形成用基板の製造方法
US5122887A (en) * 1991-03-05 1992-06-16 Sayett Group, Inc. Color display utilizing twisted nematic LCDs and selective polarizers
JP2812405B2 (ja) * 1991-03-15 1998-10-22 信越半導体株式会社 半導体基板の製造方法
CA2061796C (en) * 1991-03-28 2002-12-24 Kalluri R. Sarma High mobility integrated drivers for active matrix displays
US5110748A (en) * 1991-03-28 1992-05-05 Honeywell Inc. Method for fabricating high mobility thin film transistors as integrated drivers for active matrix display

Also Published As

Publication number Publication date
DE69320210T2 (de) 1999-02-11
EP0677207A1 (de) 1995-10-18
US5258323A (en) 1993-11-02
FI953159A (fi) 1995-06-26
FI953159A0 (fi) 1995-06-26
KR960700522A (ko) 1996-01-20
TW295674B (de) 1997-01-11
JPH08505010A (ja) 1996-05-28
JP3584035B2 (ja) 2004-11-04
KR100275828B1 (ko) 2000-12-15
EP0677207B1 (de) 1998-08-05
RU2121733C1 (ru) 1998-11-10
WO1994015356A1 (en) 1994-07-07

Similar Documents

Publication Publication Date Title
DE69320210T2 (de) Einkristallines silizium auf quarz
DE69427730D1 (de) Kristallresonator
DE69331228T4 (de) Heilmittel für thrombozytopenia
DE69313003T2 (de) Navigationsvorrichtung
DE59209827D1 (de) Flüssigkristalline verbindungen
KR900008069A (ko) 실리콘 단결정의 제조장치
DE69319463T2 (de) Einkristall-Ziehvorrichtung
KR970705775A (ko) 강유전성 액정 장치(Ferroeletric loquid crystal devices)
DE69318412T2 (de) Haltevorrichtungen
DE69311918D1 (de) Quarzkristalldruckwandler
DE69311533D1 (de) Kalenderuhr
DE59610014D1 (de) Schwingquarzsensor
DE69013631D1 (de) Einkristallsilizium.
DE59406690D1 (de) Flüssigkristalline verbindungen
FI911127A (fi) Anordning foer framstaellning av enskilda silikonkristaller.
DE69311546D1 (de) Modulbrücke
DE69222302D1 (de) Photopolymerisierbarer klebstoff
DE69231552D1 (de) Komplex Kristall
DE69221215D1 (de) Drehschwingender Quarzkristallresonator
KR940022683U (ko) 단결정 성장장치
KR890010208U (ko) 쌀통의 잔량표시장치
KR930023607U (ko) 용기 정렬기의 훤넬 고정장치
KR930026332U (ko) 기타용 카포
DE69322005D1 (de) Einkristalline Feldemissionsvorrichtung
KR940022682U (ko) 다중도가니 장착용 단결정 제조장치

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee