DE69319002T2 - Photovoltaische Vorrichtung - Google Patents
Photovoltaische VorrichtungInfo
- Publication number
- DE69319002T2 DE69319002T2 DE69319002T DE69319002T DE69319002T2 DE 69319002 T2 DE69319002 T2 DE 69319002T2 DE 69319002 T DE69319002 T DE 69319002T DE 69319002 T DE69319002 T DE 69319002T DE 69319002 T2 DE69319002 T2 DE 69319002T2
- Authority
- DE
- Germany
- Prior art keywords
- photovoltaic device
- surface protection
- protection layer
- granules
- electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000008187 granular material Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
- H01L31/022475—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of indium tin oxide [ITO]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
- H01L31/022483—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of zinc oxide [ZnO]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/0543—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the refractive type, e.g. lenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/0547—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4081715A JP2756050B2 (ja) | 1992-03-03 | 1992-03-03 | 光起電力装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69319002D1 DE69319002D1 (de) | 1998-07-16 |
DE69319002T2 true DE69319002T2 (de) | 1998-12-17 |
Family
ID=13754102
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69319002T Expired - Fee Related DE69319002T2 (de) | 1992-03-03 | 1993-03-02 | Photovoltaische Vorrichtung |
Country Status (7)
Country | Link |
---|---|
US (1) | US5421909A (de) |
EP (1) | EP0559141B1 (de) |
JP (1) | JP2756050B2 (de) |
KR (1) | KR960015500B1 (de) |
AT (1) | ATE167332T1 (de) |
AU (1) | AU671615B2 (de) |
DE (1) | DE69319002T2 (de) |
Families Citing this family (95)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5656098A (en) * | 1992-03-03 | 1997-08-12 | Canon Kabushiki Kaisha | Photovoltaic conversion device and method for producing same |
JP4063896B2 (ja) * | 1995-06-20 | 2008-03-19 | 株式会社半導体エネルギー研究所 | 有色シースルー光起電力装置 |
US5800632A (en) * | 1995-09-28 | 1998-09-01 | Canon Kabushiki Kaisha | Photovoltaic device and method for manufacturing it |
JP3862334B2 (ja) | 1995-12-26 | 2006-12-27 | キヤノン株式会社 | 電子写真用光受容部材 |
US5989721A (en) * | 1996-05-15 | 1999-11-23 | Tapeswitch Corporation Of America | Device and method for generating electrical energy |
JPH1090929A (ja) * | 1996-09-11 | 1998-04-10 | Canon Inc | 電子写真用光受容部材 |
US6338809B1 (en) | 1997-02-24 | 2002-01-15 | Superior Micropowders Llc | Aerosol method and apparatus, particulate products, and electronic devices made therefrom |
JP3935237B2 (ja) * | 1997-03-11 | 2007-06-20 | キヤノン株式会社 | 光電気変換体及び建材 |
DE69828936T2 (de) * | 1997-10-27 | 2006-04-13 | Sharp K.K. | Photoelektrischer Wandler und sein Herstellungsverfahren |
JPH11317538A (ja) * | 1998-02-17 | 1999-11-16 | Canon Inc | 光導電性薄膜および光起電力素子 |
JP4208281B2 (ja) * | 1998-02-26 | 2009-01-14 | キヤノン株式会社 | 積層型光起電力素子 |
JPH11317475A (ja) * | 1998-02-27 | 1999-11-16 | Canon Inc | 半導体用封止材樹脂および半導体素子 |
US6075203A (en) * | 1998-05-18 | 2000-06-13 | E. I. Du Pont Nemours And Company | Photovoltaic cells |
US6444189B1 (en) | 1998-05-18 | 2002-09-03 | E. I. Du Pont De Nemours And Company | Process for making and using titanium oxide particles |
US6335479B1 (en) | 1998-10-13 | 2002-01-01 | Dai Nippon Printing Co., Ltd. | Protective sheet for solar battery module, method of fabricating the same and solar battery module |
EP1054456A3 (de) * | 1999-05-17 | 2007-01-03 | Dai Nippon Printing Co., Ltd. | Schutzschicht für einen Solarzellenmodul, Herstellungsverfahren derselben und Solarzellenmodul |
DE10123262B4 (de) * | 2001-05-12 | 2004-07-01 | Achilles, Dieter, Dr. | Vorrichtung zur gleichmäßigen Ausleuchtung von Photovoltaikzellen |
JP2003037281A (ja) | 2001-05-17 | 2003-02-07 | Canon Inc | 被覆材及び光起電力素子 |
EP1321446A1 (de) * | 2001-12-20 | 2003-06-25 | RWE Solar GmbH | Verfahren zum Ausbilden einer Schichtstruktur auf einem Substrat |
FR2861853B1 (fr) * | 2003-10-30 | 2006-02-24 | Soitec Silicon On Insulator | Substrat avec adaptation d'indice |
DE202004021784U1 (de) * | 2004-09-24 | 2011-01-05 | Saint-Gobain Glass Deutschland Gmbh | Photovoltaische Silizium-Solarzelle und Solarmodul |
JP4959127B2 (ja) * | 2004-10-29 | 2012-06-20 | 三菱重工業株式会社 | 光電変換装置及び光電変換装置用基板 |
JP4634129B2 (ja) | 2004-12-10 | 2011-02-16 | 三菱重工業株式会社 | 光散乱膜,及びそれを用いる光デバイス |
JP2006196853A (ja) * | 2004-12-13 | 2006-07-27 | Daikin Ind Ltd | ヒートポンプ装置 |
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CN101273464B (zh) | 2005-09-30 | 2011-04-20 | 三洋电机株式会社 | 太阳能电池和太阳能电池模块 |
US8816191B2 (en) * | 2005-11-29 | 2014-08-26 | Banpil Photonics, Inc. | High efficiency photovoltaic cells and manufacturing thereof |
KR20070099840A (ko) * | 2006-04-05 | 2007-10-10 | 삼성에스디아이 주식회사 | 태양 전지 및 이의 제조 방법 |
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EP2530732B1 (de) | 2010-01-25 | 2019-04-17 | LG Chem, Ltd. | Folie für photovoltaikzellen |
US8142521B2 (en) * | 2010-03-29 | 2012-03-27 | Stion Corporation | Large scale MOCVD system for thin film photovoltaic devices |
US9096930B2 (en) | 2010-03-29 | 2015-08-04 | Stion Corporation | Apparatus for manufacturing thin film photovoltaic devices |
NO20100785A1 (no) * | 2010-05-31 | 2011-12-01 | Innotech Solar Asa | Mekanisk styrking av solceller |
US8461061B2 (en) | 2010-07-23 | 2013-06-11 | Stion Corporation | Quartz boat method and apparatus for thin film thermal treatment |
KR101154577B1 (ko) * | 2010-07-30 | 2012-06-08 | 엘지이노텍 주식회사 | 태양전지 및 이의 제조방법 |
KR101139734B1 (ko) * | 2010-10-27 | 2012-04-26 | 주식회사 세원 | 염료감응형 태양전지 |
KR101140731B1 (ko) * | 2010-11-22 | 2012-05-03 | 한국철강 주식회사 | 3차원 광결정 구조를 포함한 투광형 광기전력 모듈, 이의 제조방법, 및 이를 포함한 복층유리 |
CN102074602A (zh) * | 2010-12-08 | 2011-05-25 | 山东力诺光伏高科技有限公司 | 一种单彩色太阳能电池组件及制作方法 |
CN102074603A (zh) * | 2010-12-08 | 2011-05-25 | 山东力诺光伏高科技有限公司 | 一种后镀膜的彩色太阳能电池组件及其制备工艺 |
KR20120095683A (ko) * | 2011-02-21 | 2012-08-29 | 삼성전자주식회사 | 태양 전지 및 이의 제조 방법 |
JP5833330B2 (ja) * | 2011-04-08 | 2015-12-16 | 株式会社デンソー | 太陽電池モジュール及び太陽電池モジュールの製造方法 |
WO2012160862A1 (ja) * | 2011-05-23 | 2012-11-29 | 三菱電機株式会社 | 太陽電池およびその製造方法 |
KR101306443B1 (ko) * | 2011-11-29 | 2013-09-09 | 엘지이노텍 주식회사 | 태양전지 모듈 및 이의 제조 방법 |
FR2985374A1 (fr) * | 2011-12-26 | 2013-07-05 | Solsia | Panneau photovoltaique a diodes montees en parallele a structure centrale diffusante et structure arriere reflechissante |
TWI652831B (zh) * | 2013-05-23 | 2019-03-01 | 新能光電科技股份有限公司 | 彩色太陽能電池及含有該電池之太陽能面板 |
JP2017120873A (ja) | 2015-12-25 | 2017-07-06 | 京セラ株式会社 | 絶縁性ペーストおよびその製造方法並びに太陽電池素子の製造方法 |
CN108630775B (zh) * | 2018-05-29 | 2021-03-16 | 浙江巨化技术中心有限公司 | 一种涂料封装的薄膜太阳能电池及其成型方法 |
TWI677658B (zh) * | 2019-02-21 | 2019-11-21 | 南臺學校財團法人南臺科技大學 | 建築用太陽能模組 |
PL435800A1 (pl) * | 2020-10-29 | 2022-05-02 | Ml System Spółka Akcyjna | Sposób wytwarzania ogniw fotowoltaicznych μ - tandemowych i ogniwo μ -tandemowe wytwarzane tym sposobem |
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DE3047383A1 (de) * | 1980-12-16 | 1982-07-15 | Siemens AG, 1000 Berlin und 8000 München | Solarzelle mit erhoehtem wirkungsgrad |
DE3117571A1 (de) * | 1981-05-04 | 1982-11-18 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Lumineszenz-halbleiterbauelement |
JPS5870581A (ja) * | 1981-10-21 | 1983-04-27 | Sharp Corp | 太陽電池装置 |
JPS5973942A (ja) * | 1982-10-20 | 1984-04-26 | 日東電工株式会社 | 表面保護材 |
JPS6034080A (ja) * | 1983-08-05 | 1985-02-21 | Kanegafuchi Chem Ind Co Ltd | 光起電力素子 |
JPH07105509B2 (ja) * | 1985-09-18 | 1995-11-13 | 三洋電機株式会社 | 光起電力装置 |
JPH0536284Y2 (de) * | 1986-07-11 | 1993-09-14 | ||
JPS6477973A (en) * | 1987-09-19 | 1989-03-23 | Mitsubishi Electric Corp | Photovoltaic device |
JPH01106472A (ja) * | 1987-10-20 | 1989-04-24 | Sanyo Electric Co Ltd | 太陽電池 |
JPH01304755A (ja) * | 1988-06-01 | 1989-12-08 | Mitsubishi Electric Corp | 光半導体装置 |
JPH02177573A (ja) * | 1988-12-28 | 1990-07-10 | Matsushita Electric Ind Co Ltd | 光起電力装置 |
JP2663414B2 (ja) * | 1988-12-30 | 1997-10-15 | 太陽誘電株式会社 | 非晶質半導体太陽電池 |
DE9017938U1 (de) * | 1990-09-20 | 1992-03-12 | Flachglas-Solartechnik Gmbh, 5000 Koeln, De |
-
1992
- 1992-03-03 JP JP4081715A patent/JP2756050B2/ja not_active Expired - Fee Related
-
1993
- 1993-03-01 US US08/024,252 patent/US5421909A/en not_active Expired - Fee Related
- 1993-03-02 DE DE69319002T patent/DE69319002T2/de not_active Expired - Fee Related
- 1993-03-02 EP EP93103291A patent/EP0559141B1/de not_active Expired - Lifetime
- 1993-03-02 AT AT93103291T patent/ATE167332T1/de not_active IP Right Cessation
- 1993-03-02 AU AU33931/93A patent/AU671615B2/en not_active Ceased
- 1993-03-03 KR KR1019930003080A patent/KR960015500B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
US5421909A (en) | 1995-06-06 |
AU671615B2 (en) | 1996-09-05 |
EP0559141A2 (de) | 1993-09-08 |
AU3393193A (en) | 1993-09-09 |
KR930020745A (ko) | 1993-10-20 |
ATE167332T1 (de) | 1998-06-15 |
EP0559141A3 (en) | 1993-10-06 |
EP0559141B1 (de) | 1998-06-10 |
JPH05335610A (ja) | 1993-12-17 |
DE69319002D1 (de) | 1998-07-16 |
JP2756050B2 (ja) | 1998-05-25 |
KR960015500B1 (ko) | 1996-11-14 |
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