PL435800A1 - Sposób wytwarzania ogniw fotowoltaicznych μ - tandemowych i ogniwo μ -tandemowe wytwarzane tym sposobem - Google Patents

Sposób wytwarzania ogniw fotowoltaicznych μ - tandemowych i ogniwo μ -tandemowe wytwarzane tym sposobem

Info

Publication number
PL435800A1
PL435800A1 PL435800A PL43580020A PL435800A1 PL 435800 A1 PL435800 A1 PL 435800A1 PL 435800 A PL435800 A PL 435800A PL 43580020 A PL43580020 A PL 43580020A PL 435800 A1 PL435800 A1 PL 435800A1
Authority
PL
Poland
Prior art keywords
stage
tandem
silicon substrate
layer
colloidal material
Prior art date
Application number
PL435800A
Other languages
English (en)
Other versions
PL245794B1 (pl
Inventor
Paweł Kwaśnicki
Original Assignee
Ml System Spółka Akcyjna
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ml System Spółka Akcyjna filed Critical Ml System Spółka Akcyjna
Priority to PL435800A priority Critical patent/PL245794B1/pl
Priority to EP21460037.1A priority patent/EP3993065A1/en
Priority to US17/510,511 priority patent/US11728455B2/en
Publication of PL435800A1 publication Critical patent/PL435800A1/pl
Publication of PL245794B1 publication Critical patent/PL245794B1/pl

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/128—Annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/19—Photovoltaic cells having multiple potential barriers of different types, e.g. tandem cells having both PN and PIN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/143—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies comprising quantum structures
    • H10F77/1433—Quantum dots
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/164—Polycrystalline semiconductors
    • H10F77/1642—Polycrystalline semiconductors including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/164—Polycrystalline semiconductors
    • H10F77/1642—Polycrystalline semiconductors including only Group IV materials
    • H10F77/1645—Polycrystalline semiconductors including only Group IV materials including microcrystalline silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells

Landscapes

  • Photovoltaic Devices (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)

Abstract

Przedmiotem zgłoszenia jest sposób wytwarzania ogniw fotowoltaicznych µ -tandemowych i ogniwo µ -tandemowe wytwarzane tym sposobem, który charakteryzuje się tym, że realizowany jest w pięciu następujących po sobie etapach, polegających na tym, że: w etapie pierwszym przygotowuje się koloid — materiał koloidalny na bazie zdyspergowanych kropek kwantowych o koncentracji 5 mg/ml — 50 mg/ml o architekturze sferoidalnej albo rodoidalnej zbudowanych na bazie pierwiastków z grupy II - VI, II - IV, IV - VI i o zakresie absorpcyjnym wynoszącym od 320 nm — 1800 nm, po czym: w etapie drugim na płytkową powierzchnię podłoża krzemowego (1) z metalizowaną jej dolną powierzchnią (2) nakłada się równomiernie metodą spray coatingu albo metodą rollblade zdyspergowany materiał koloidalny (3) w otoczeniu pola elektrycznego „E” o natężeniu 0,5 V/m - 4,5 V/m o prostopadle usytuowanych jego liniach do powierzchni tego podłoża krzemowego, uzyskując grubość naniesionej warstwy wynoszącą 6 nm — 80 nm, po czym: w etapie trzecim płytkowe podłoże krzemowe (1) z naniesioną na niego warstwą materiału koloidalnego (3) krzemu multikrystalicznego i kropek kwantowych umieszcza się w komorze termicznej i poddaje się go procesowi obróbki cieplnej w temperaturze 70°C — 90°C z profilem temperaturowym 10°C/min oraz w atmosferze gazu inertnego i wygrzewa się w czasie 5 minut - 25 minut, po czym otrzymany półprodukt wyjmuje się z tej komory i pozostawia do jego wystudzenia do temperatury pokojowej (21°C), a następnie w etapie czwartym wystudzony półprodukt tego ogniwa fotowoltaicznego poddaje się procesowi płukania przepływającym gazem inertnym pod ciśnieniem 0,6 bar — 1 bar o czystości 99,99% uzyskując warstwę pasywacyjną (5) o grubości 5 nm — 8 nm, po czym w etapie piątym półprodukt tego ogniwa poddaje się procesowi pokrywania go warstwą zabezpieczającą (6) tlenkiem aluminium (Al2O3), metodą magnetronową w temperaturze pokojowej.
PL435800A 2020-10-29 2020-10-29 Sposób wytwarzania ogniw fotowoltaicznych μ-tandemowych i ogniwo μ-tandemowe wytwarzane tym sposobem PL245794B1 (pl)

Priority Applications (3)

Application Number Priority Date Filing Date Title
PL435800A PL245794B1 (pl) 2020-10-29 2020-10-29 Sposób wytwarzania ogniw fotowoltaicznych μ-tandemowych i ogniwo μ-tandemowe wytwarzane tym sposobem
EP21460037.1A EP3993065A1 (en) 2020-10-29 2021-10-20 Method of manufacturing tandem photovoltaic cells and tandem photovoltaic cell produced by this method
US17/510,511 US11728455B2 (en) 2020-10-29 2021-10-26 Method of manufacturing μ-tandem photovoltaic cells and μ-tandem photovoltaic cell produced by this method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PL435800A PL245794B1 (pl) 2020-10-29 2020-10-29 Sposób wytwarzania ogniw fotowoltaicznych μ-tandemowych i ogniwo μ-tandemowe wytwarzane tym sposobem

Publications (2)

Publication Number Publication Date
PL435800A1 true PL435800A1 (pl) 2022-05-02
PL245794B1 PL245794B1 (pl) 2024-10-14

Family

ID=78806443

Family Applications (1)

Application Number Title Priority Date Filing Date
PL435800A PL245794B1 (pl) 2020-10-29 2020-10-29 Sposób wytwarzania ogniw fotowoltaicznych μ-tandemowych i ogniwo μ-tandemowe wytwarzane tym sposobem

Country Status (3)

Country Link
US (1) US11728455B2 (pl)
EP (1) EP3993065A1 (pl)
PL (1) PL245794B1 (pl)

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2374557A1 (fr) 1976-12-16 1978-07-13 Ferodo Sa Embrayage a double disque de friction
PL231379A1 (pl) 1981-06-29 1982-04-13 Boleslaw Lason
US4536607A (en) * 1984-03-01 1985-08-20 Wiesmann Harold J Photovoltaic tandem cell
US5211761A (en) * 1990-06-29 1993-05-18 Sanyo Electric Co., Ltd. Photovoltaic device and manufacturing method thereof
JP2938634B2 (ja) * 1991-10-08 1999-08-23 キヤノン株式会社 太陽電池モジュール
JP2756050B2 (ja) * 1992-03-03 1998-05-25 キヤノン株式会社 光起電力装置
US6346431B1 (en) 2000-07-10 2002-02-12 Lg Electronics Inc. Quantum dot infrared detection device and method for fabricating the same
JP2003069061A (ja) * 2001-08-24 2003-03-07 Sharp Corp 積層型光電変換素子
WO2003036657A1 (en) * 2001-10-19 2003-05-01 Asahi Glass Company, Limited Substrate with transparent conductive oxide film and production method therefor, and photoelectric conversion element
EP1724840B1 (en) * 2004-02-20 2013-05-08 Sharp Kabushiki Kaisha Photoelectric cell
JP5286046B2 (ja) * 2007-11-30 2013-09-11 株式会社半導体エネルギー研究所 光電変換装置の製造方法
EP2328184A1 (en) * 2008-09-12 2011-06-01 Ulvac, Inc. Solar cell and solar cell manufacturing method therefor
KR101294770B1 (ko) * 2008-11-25 2013-08-08 현대중공업 주식회사 양자점 태양전지
JP5582638B2 (ja) * 2010-02-25 2014-09-03 独立行政法人産業技術総合研究所 太陽電池
US20130206219A1 (en) * 2010-08-06 2013-08-15 Juanita N. Kurtin Cooperative photovoltaic networks and photovoltaic cell adaptations for use therein
CN101976710A (zh) * 2010-10-15 2011-02-16 上海交通大学 基于氢化微晶硅薄膜的晶体硅异质结太阳电池的制备方法
NL2015987B1 (en) 2015-12-18 2017-07-10 Stichting Energieonderzoek Centrum Nederland Tandem solar cell and method for manufacturing such a solar cell.
US20210151701A1 (en) 2018-04-12 2021-05-20 The Regents Of The University Of California HIGHLY EFFICIENT PEROVSKITE/Cu(In, Ga)Se2 TANDEM SOLAR CELL
KR102564282B1 (ko) 2018-05-10 2023-08-11 상라오 징코 솔라 테크놀러지 디벨롭먼트 컴퍼니, 리미티드 텐덤 태양전지 및 이의 제조방법
CN109950332B (zh) * 2019-03-26 2021-07-16 昆明理工大学 一种perc柔性石墨烯/硅太阳能电池的制备方法
CN210156403U (zh) 2019-06-29 2020-03-17 深圳黑晶光电科技有限公司 一种串联型钙钛矿/同质结硅叠层太阳能电池

Also Published As

Publication number Publication date
US20220140177A1 (en) 2022-05-05
EP3993065A1 (en) 2022-05-04
US11728455B2 (en) 2023-08-15
PL245794B1 (pl) 2024-10-14

Similar Documents

Publication Publication Date Title
Zhang et al. CsPbBr3 nanocrystal-embedded glasses for luminescent solar concentrators
JP6014243B2 (ja) 酸化物薄膜の製造方法
EP2534699A1 (en) Metal substrate with insulation layer and manufacturing method thereof, semiconductor device and manufacturing method thereof, solar cell and manufacturing method thereof, electronic circuit and manufacturing method thereof, and light-emitting element and manufacturing method thereof
US10886122B2 (en) Methods for conformal treatment of dielectric films with low thermal budget
Wageh Light emitting devices based on CdSe nanoparticles capped with mercaptoacetic acid
Shiojiri et al. Room-temperature fabrication of highly oriented β-Ga2O3 thin films by excimer laser annealing
CN105118922B (zh) 一种立方晶系结构钙钛矿型光敏材料及其制备方法
Rana et al. Modification of hydrophobic PTAA layer with Al2O3 nanoparticle over large-area inverted perovskite solar cell
Shimizu-Iwayama et al. Novel approach for synthesizing of nanometer-sized Si crystals in SiO2 by ion implantation and their optical characterization
CN111321443B (zh) 一种禁带宽度可缩小的氧化亚铜薄膜的制备方法
CN116525535B (zh) 一种多层化soi基板的制备方法及soi基板
KR20120001121A (ko) 물리적 기상 증착법을 이용한 그래핀 박막의 형성방법
TW202120327A (zh) 覆銅陶瓷基板
Lu et al. Synthesis and Characterization of Silver Indium Diselenide Thin Films Prepared via the Sol‐Gel Assisted Process
CN107464861A (zh) 一种含Ag表面等离激元的硅基LED的制备方法及应用
CN105483646A (zh) 一种紫外吸收薄膜的制备方法
CN115172514A (zh) 一种提升硒化镉薄膜质量的原位气封退火方法
Mirgorodskiy et al. Luminescence properties of thin nanocrystalline silicon-carbide films fabricated by direct-beam ion deposition
JP5072288B2 (ja) ゲート絶縁膜の形成方法、半導体素子の製造装置
Mandal et al. Strong blue excitonic emission from CdS nanocrystallites prepared by LB technique
CN115206789A (zh) 一种碳化硅欧姆接触及其制备方法
Zhang et al. Performance Enhancement of InGaZnO Thin-Film Transistors via Rapid Cooling Process and Their Application in Logic Circuits
Khoo et al. External quantum efficiency of electrochemically prepared and annealed directly stacked SLG/GZO/Cu2O/CuO photoactive layer
CN104925740A (zh) 一种利用激光退火改善热键合质量的方法
Tan et al. Laser annealing of silicon nanocrystal films formed by pulsed-laser deposition