CN105483646A - 一种紫外吸收薄膜的制备方法 - Google Patents
一种紫外吸收薄膜的制备方法 Download PDFInfo
- Publication number
- CN105483646A CN105483646A CN201610038774.2A CN201610038774A CN105483646A CN 105483646 A CN105483646 A CN 105483646A CN 201610038774 A CN201610038774 A CN 201610038774A CN 105483646 A CN105483646 A CN 105483646A
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- CN
- China
- Prior art keywords
- boron nitride
- film
- oxygen
- hexagonal boron
- tinsel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/342—Boron nitride
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Surface Treatment Of Glass (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
Description
Claims (5)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610038774.2A CN105483646B (zh) | 2016-01-20 | 2016-01-20 | 一种紫外吸收薄膜的制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CN201610038774.2A CN105483646B (zh) | 2016-01-20 | 2016-01-20 | 一种紫外吸收薄膜的制备方法 |
Publications (2)
Publication Number | Publication Date |
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CN105483646A true CN105483646A (zh) | 2016-04-13 |
CN105483646B CN105483646B (zh) | 2019-01-18 |
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Family Applications (1)
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CN201610038774.2A Active CN105483646B (zh) | 2016-01-20 | 2016-01-20 | 一种紫外吸收薄膜的制备方法 |
Country Status (1)
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CN (1) | CN105483646B (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107051370A (zh) * | 2017-05-24 | 2017-08-18 | 成都理工大学 | 非晶态o掺杂的bn纳米片的制备方法 |
CN112941466A (zh) * | 2021-01-29 | 2021-06-11 | 杭州电子科技大学 | 一种金掺杂氮化硼薄膜的制备方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101010445A (zh) * | 2004-09-02 | 2007-08-01 | 卡尔斯鲁厄研究中心股份有限公司 | 具有立方氮化硼的分层复合物 |
CN101690420A (zh) * | 2007-05-23 | 2010-03-31 | 应用材料股份有限公司 | 氮化硼和氮化硼导出材料的沉积方法 |
CN103031516A (zh) * | 2013-01-18 | 2013-04-10 | 浙江大学 | 一种六角相氮化硼薄膜的制备方法 |
-
2016
- 2016-01-20 CN CN201610038774.2A patent/CN105483646B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101010445A (zh) * | 2004-09-02 | 2007-08-01 | 卡尔斯鲁厄研究中心股份有限公司 | 具有立方氮化硼的分层复合物 |
CN101690420A (zh) * | 2007-05-23 | 2010-03-31 | 应用材料股份有限公司 | 氮化硼和氮化硼导出材料的沉积方法 |
CN103031516A (zh) * | 2013-01-18 | 2013-04-10 | 浙江大学 | 一种六角相氮化硼薄膜的制备方法 |
Non-Patent Citations (1)
Title |
---|
李玉伟等: "六方氮化硼原子层薄膜的制备研究", 《杭州电子科技大学学报》 * |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107051370A (zh) * | 2017-05-24 | 2017-08-18 | 成都理工大学 | 非晶态o掺杂的bn纳米片的制备方法 |
CN107051370B (zh) * | 2017-05-24 | 2019-08-09 | 成都理工大学 | 非晶态o掺杂的bn纳米片的制备方法 |
CN112941466A (zh) * | 2021-01-29 | 2021-06-11 | 杭州电子科技大学 | 一种金掺杂氮化硼薄膜的制备方法 |
Also Published As
Publication number | Publication date |
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CN105483646B (zh) | 2019-01-18 |
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Effective date of registration: 20200819 Address after: Room 504, building 9, No. 20, kekeyuan Road, Baiyang street, Qiantang New District, Hangzhou City, Zhejiang Province Patentee after: Zhejiang Qibo Intellectual Property Operation Co.,Ltd. Address before: Hangzhou City, Zhejiang province 310018 Xiasha Higher Education Park No. 2 street Patentee before: HANGZHOU DIANZI University |
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Effective date of registration: 20210118 Address after: 221600 Peixian Economic Development Zone, Xuzhou City, Jiangsu Province, North of Peihe Highway and East of Hanrun Road (Science and Technology Pioneer Park) Patentee after: JIANGSU ZHONGSHANG CARBON INSTITUTE Co.,Ltd. Address before: 310018 room 504, building 9, 20 kejiyuan Road, Baiyang street, Qiantang New District, Hangzhou City, Zhejiang Province Patentee before: Zhejiang Qibo Intellectual Property Operation Co.,Ltd. |
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