DE69318957D1 - Herstellungsverfahren für Druckwandler mittels der Silicium auf Isolation Technologie sowie derart hergestellte Wandler - Google Patents

Herstellungsverfahren für Druckwandler mittels der Silicium auf Isolation Technologie sowie derart hergestellte Wandler

Info

Publication number
DE69318957D1
DE69318957D1 DE69318957T DE69318957T DE69318957D1 DE 69318957 D1 DE69318957 D1 DE 69318957D1 DE 69318957 T DE69318957 T DE 69318957T DE 69318957 T DE69318957 T DE 69318957T DE 69318957 D1 DE69318957 D1 DE 69318957D1
Authority
DE
Germany
Prior art keywords
transducers
silicon
way
manufacturing process
manufactured
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69318957T
Other languages
English (en)
Other versions
DE69318957T2 (de
Inventor
Bernard Diem
Marie-Therese Delaye
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Publication of DE69318957D1 publication Critical patent/DE69318957D1/de
Application granted granted Critical
Publication of DE69318957T2 publication Critical patent/DE69318957T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
    • B81C1/00158—Diaphragms, membranes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
    • G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
    • G01L9/0055—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements bonded on a diaphragm
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0072—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance
    • G01L9/0073—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance using a semiconductive diaphragm
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0264—Pressure sensors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/135—Removal of substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/159—Strain gauges
DE69318957T 1992-12-28 1993-12-23 Herstellungsverfahren für Druckwandler mittels der Silicium auf Isolation Technologie sowie derart hergestellte Wandler Expired - Lifetime DE69318957T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9215772A FR2700003B1 (fr) 1992-12-28 1992-12-28 Procédé de fabrication d'un capteur de pression utilisant la technologie silicium sur isolant et capteur obtenu.

Publications (2)

Publication Number Publication Date
DE69318957D1 true DE69318957D1 (de) 1998-07-09
DE69318957T2 DE69318957T2 (de) 1998-12-17

Family

ID=9437154

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69318957T Expired - Lifetime DE69318957T2 (de) 1992-12-28 1993-12-23 Herstellungsverfahren für Druckwandler mittels der Silicium auf Isolation Technologie sowie derart hergestellte Wandler

Country Status (5)

Country Link
US (2) US5510276A (de)
EP (1) EP0605302B1 (de)
JP (1) JP3444639B2 (de)
DE (1) DE69318957T2 (de)
FR (1) FR2700003B1 (de)

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Also Published As

Publication number Publication date
FR2700003A1 (fr) 1994-07-01
US5912499A (en) 1999-06-15
JPH077160A (ja) 1995-01-10
US5510276A (en) 1996-04-23
DE69318957T2 (de) 1998-12-17
EP0605302A3 (en) 1994-09-28
FR2700003B1 (fr) 1995-02-10
EP0605302A2 (de) 1994-07-06
JP3444639B2 (ja) 2003-09-08
EP0605302B1 (de) 1998-06-03

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