DE69008225T2 - Druckwandler der Art Halbleiter auf Isolierschicht. - Google Patents

Druckwandler der Art Halbleiter auf Isolierschicht.

Info

Publication number
DE69008225T2
DE69008225T2 DE69008225T DE69008225T DE69008225T2 DE 69008225 T2 DE69008225 T2 DE 69008225T2 DE 69008225 T DE69008225 T DE 69008225T DE 69008225 T DE69008225 T DE 69008225T DE 69008225 T2 DE69008225 T2 DE 69008225T2
Authority
DE
Germany
Prior art keywords
insulating layer
pressure transducer
semiconductor type
semiconductor
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69008225T
Other languages
English (en)
Other versions
DE69008225D1 (de
Inventor
Vincent Mosser
Ian Suski
Joseph Goss
Robert Leydier
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Johnson Controls Automotive Electronics SAS
Original Assignee
Sagem SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sagem SA filed Critical Sagem SA
Application granted granted Critical
Publication of DE69008225D1 publication Critical patent/DE69008225D1/de
Publication of DE69008225T2 publication Critical patent/DE69008225T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
    • G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
    • G01L1/2287—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges
    • G01L1/2293—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges of the semi-conductor type
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
    • G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
    • G01L9/0055—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements bonded on a diaphragm

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)
DE69008225T 1989-02-15 1990-02-14 Druckwandler der Art Halbleiter auf Isolierschicht. Expired - Lifetime DE69008225T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8901988A FR2643148B1 (fr) 1989-02-15 1989-02-15 Capteur de pression du type semiconducteur sur isolant

Publications (2)

Publication Number Publication Date
DE69008225D1 DE69008225D1 (de) 1994-05-26
DE69008225T2 true DE69008225T2 (de) 1994-08-04

Family

ID=9378821

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69024373T Expired - Lifetime DE69024373T2 (de) 1989-02-15 1990-02-14 Verfahren zum Strukturieren eines piezoresistiven Elements auf einem Isolierträger
DE69008225T Expired - Lifetime DE69008225T2 (de) 1989-02-15 1990-02-14 Druckwandler der Art Halbleiter auf Isolierschicht.

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE69024373T Expired - Lifetime DE69024373T2 (de) 1989-02-15 1990-02-14 Verfahren zum Strukturieren eines piezoresistiven Elements auf einem Isolierträger

Country Status (5)

Country Link
US (1) US5081437A (de)
EP (2) EP0390619B1 (de)
JP (1) JPH0320634A (de)
DE (2) DE69024373T2 (de)
FR (1) FR2643148B1 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69021379T2 (de) * 1990-07-27 1996-04-04 Data Instr Inc Verfahren zur Herstellung eines Druckwandlers.
JPH05196458A (ja) * 1991-01-04 1993-08-06 Univ Leland Stanford Jr 原子力顕微鏡用ピエゾ抵抗性片持ばり構造体
US6044711A (en) * 1997-01-10 2000-04-04 Psi-Tronix, Inc. Force sensing apparatus
JPH11135807A (ja) * 1997-10-30 1999-05-21 Hitachi Ltd Ｓｏｉ型圧力センサ
FR2791474B1 (fr) * 1999-03-26 2001-06-08 Centre Nat Rech Scient Detecteur infrarouge semi-conducteur et son procede de fabrication
US6824521B2 (en) * 2001-01-22 2004-11-30 Integrated Sensing Systems, Inc. Sensing catheter system and method of fabrication
JP2002340713A (ja) * 2001-05-10 2002-11-27 Denso Corp 半導体圧力センサ
JP4164676B2 (ja) * 2003-12-25 2008-10-15 株式会社デンソー 力学量センサ素子構造及びその製造方法
US20050279177A1 (en) * 2004-06-16 2005-12-22 Yu-Hsiang Hsu Strain gauge apparatus having a point-distributed sensor
CA2623793C (en) * 2008-03-03 2010-11-23 Schlumberger Canada Limited Microfluidic apparatus and method for measuring thermo-physical properties of a reservoir fluid
WO2011013111A2 (en) 2009-07-31 2011-02-03 Schlumberger Canada Limited Pressure measurement of a reservoir fluid in a microfluidic device
US9557230B2 (en) 2011-10-21 2017-01-31 Csem Centre Suisse D'electronique Et De Microtechnique Sa—Recherche Et Developpement SiC high temperature pressure transducer
US20160178467A1 (en) * 2014-07-29 2016-06-23 Silicon Microstructures, Inc. Pressure sensor having cap-defined membrane
CN107407610A (zh) * 2015-04-06 2017-11-28 株式会社电装 力检测装置
JP6430327B2 (ja) * 2015-04-22 2018-11-28 株式会社豊田中央研究所 力検知装置
JP6333208B2 (ja) * 2015-04-06 2018-05-30 株式会社豊田中央研究所 力検知装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3368179A (en) * 1966-03-30 1968-02-06 Gen Electric Temperature compensated semiconductor strain gage
US3626588A (en) * 1970-02-24 1971-12-14 Kenneth M Durham Jr Silicon resistor
US3886799A (en) * 1973-09-24 1975-06-03 Nat Semiconductor Corp Semiconductor pressure transducer employing temperature compensation circuits and novel heater circuitry
US4003127A (en) * 1974-11-25 1977-01-18 General Motors Corporation Polycrystalline silicon pressure transducer
AU503379B1 (en) * 1978-08-28 1979-08-30 Babcock & Wilcox Co., The Pressure transducer
DE3041756A1 (de) * 1980-11-05 1982-06-09 Siemens AG, 1000 Berlin und 8000 München Drucksensor
JPS59230131A (ja) * 1983-06-13 1984-12-24 Tokyo Electric Co Ltd ロ−ドセル
JPH0712086B2 (ja) * 1984-01-27 1995-02-08 株式会社日立製作所 ダイヤフラムセンサの製造方法
US4633283A (en) * 1985-03-11 1986-12-30 Rca Corporation Circuit and structure for protecting integrated circuits from destructive transient voltages
GB8517913D0 (en) * 1985-07-16 1985-08-21 Patscentre Benelux Nv Sa Semiconductor strain gauges
DE3543261A1 (de) * 1985-12-06 1987-06-11 Siemens Ag Drucksensor
GB2207804B (en) * 1987-08-06 1990-08-15 Stc Plc Pressure sensor and manufacturing process therefor

Also Published As

Publication number Publication date
EP0390619A3 (de) 1991-01-30
EP0390619A2 (de) 1990-10-03
FR2643148A1 (fr) 1990-08-17
JPH0320634A (ja) 1991-01-29
DE69024373D1 (de) 1996-02-01
FR2643148B1 (fr) 1991-12-06
EP0581328A1 (de) 1994-02-02
DE69008225D1 (de) 1994-05-26
EP0581328B1 (de) 1995-12-20
EP0390619B1 (de) 1994-04-20
DE69024373T2 (de) 1996-05-15
US5081437A (en) 1992-01-14

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Free format text: DERZEIT KEIN VERTRETER BESTELLT

8327 Change in the person/name/address of the patent owner

Owner name: JOHNSON CONTROLS AUTOMOTIVE ELECTRONICS S.A.S., OS