DE69512544D1 - Halbleiter-Druckwandler mit Einkristall-Silizium-Membran und Einkristall-Dehnungsmessstreifen und Herstellungsverfahren dazu - Google Patents

Halbleiter-Druckwandler mit Einkristall-Silizium-Membran und Einkristall-Dehnungsmessstreifen und Herstellungsverfahren dazu

Info

Publication number
DE69512544D1
DE69512544D1 DE69512544T DE69512544T DE69512544D1 DE 69512544 D1 DE69512544 D1 DE 69512544D1 DE 69512544 T DE69512544 T DE 69512544T DE 69512544 T DE69512544 T DE 69512544T DE 69512544 D1 DE69512544 D1 DE 69512544D1
Authority
DE
Germany
Prior art keywords
single crystal
manufacturing process
pressure transducer
strain gauges
semiconductor pressure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69512544T
Other languages
English (en)
Other versions
DE69512544T2 (de
Inventor
Clifford D Fung
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Schneider Electric Systems USA Inc
Original Assignee
Foxboro Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Foxboro Co filed Critical Foxboro Co
Publication of DE69512544D1 publication Critical patent/DE69512544D1/de
Application granted granted Critical
Publication of DE69512544T2 publication Critical patent/DE69512544T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
    • G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
    • G01L9/0055—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements bonded on a diaphragm
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/136—Resistors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/97—Specified etch stop material

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Pressure Sensors (AREA)
DE69512544T 1994-03-18 1995-03-17 Halbleiter-Druckwandler mit Einkristall-Silizium-Membran und Einkristall-Dehnungsmessstreifen und Herstellungsverfahren dazu Expired - Fee Related DE69512544T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US21004194A 1994-03-18 1994-03-18

Publications (2)

Publication Number Publication Date
DE69512544D1 true DE69512544D1 (de) 1999-11-11
DE69512544T2 DE69512544T2 (de) 2000-05-25

Family

ID=22781361

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69512544T Expired - Fee Related DE69512544T2 (de) 1994-03-18 1995-03-17 Halbleiter-Druckwandler mit Einkristall-Silizium-Membran und Einkristall-Dehnungsmessstreifen und Herstellungsverfahren dazu

Country Status (3)

Country Link
US (1) US5672551A (de)
EP (1) EP0672899B1 (de)
DE (1) DE69512544T2 (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5804462A (en) * 1995-11-30 1998-09-08 Motorola, Inc. Method for forming a multiple-sensor semiconductor chip
DE19741428A1 (de) * 1997-09-19 1999-04-01 Siemens Ag Halbleitersensor mit einem Grundkörper und wenigstens einem Verformungskörper
US6022756A (en) * 1998-07-31 2000-02-08 Delco Electronics Corp. Metal diaphragm sensor with polysilicon sensing elements and methods therefor
US6278167B1 (en) 1998-08-14 2001-08-21 Infineon Technologies Ag Semiconductor sensor with a base element and at least one deformation element
US6225140B1 (en) * 1998-10-13 2001-05-01 Institute Of Microelectronics CMOS compatable surface machined pressure sensor and method of fabricating the same
US6816301B1 (en) 1999-06-29 2004-11-09 Regents Of The University Of Minnesota Micro-electromechanical devices and methods of manufacture
US6580139B1 (en) * 2000-07-20 2003-06-17 Emcore Corporation Monolithically integrated sensing device and method of manufacture
US6528340B2 (en) * 2001-01-03 2003-03-04 Honeywell International Inc. Pressure transducer with composite diaphragm
DE10241450A1 (de) 2002-09-06 2004-03-18 Robert Bosch Gmbh Verfahren zur Herstellung eines Bauteils mit einem Sensorelement, insbesondere eines Verformungssensors
TWI289879B (en) * 2005-09-30 2007-11-11 Touch Micro System Tech Method of fabricating pressure sensor
JP4144640B2 (ja) * 2006-10-13 2008-09-03 オムロン株式会社 振動センサの製造方法
JP5110885B2 (ja) * 2007-01-19 2012-12-26 キヤノン株式会社 複数の導電性の領域を有する構造体
DE102007014468A1 (de) * 2007-03-22 2008-09-25 Endress + Hauser Gmbh + Co. Kg Drucksensor-Chip
US8240217B2 (en) * 2007-10-15 2012-08-14 Kavlico Corporation Diaphragm isolation forming through subtractive etching
US8187903B2 (en) * 2009-01-13 2012-05-29 Robert Bosch Gmbh Method of epitaxially growing piezoresistors
DE102009034777B4 (de) * 2009-07-25 2015-12-10 Semikron Elektronik Gmbh & Co. Kg Verfahren zu Herstellung eines regelbaren Widerstandsbauelements und dessen Verwendung
JP2012026856A (ja) * 2010-07-23 2012-02-09 Hitachi Automotive Systems Ltd 熱式空気流量センサ
JP5436404B2 (ja) * 2010-12-17 2014-03-05 三菱電機株式会社 半導体圧力センサ及びその製造方法
CN104724662B (zh) * 2013-12-19 2016-05-25 中国科学院上海微系统与信息技术研究所 一种多晶硅应力传感器及其制作方法
JP6212000B2 (ja) * 2014-07-02 2017-10-11 株式会社東芝 圧力センサ、並びに圧力センサを用いたマイクロフォン、血圧センサ、及びタッチパネル
JP6621434B2 (ja) * 2017-03-16 2019-12-18 日立オートモティブシステムズ株式会社 Ｍｅｍｓセンサ
FR3110284B1 (fr) * 2020-05-14 2023-01-13 Commissariat Energie Atomique Dispositif de détection utilisant une transduction piézorésistive

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3930823A (en) * 1972-03-14 1976-01-06 Kulite Semiconductor Products, Inc. High temperature transducers and housing including fabrication methods
US3938175A (en) * 1974-04-24 1976-02-10 General Motors Corporation Polycrystalline silicon pressure transducer
US4456901A (en) * 1981-08-31 1984-06-26 Kulite Semiconductor Products, Inc. Dielectrically isolated transducer employing single crystal strain gages
US4510671A (en) * 1981-08-31 1985-04-16 Kulite Semiconductor Products, Inc. Dielectrically isolated transducer employing single crystal strain gages
JPS59117271A (ja) * 1982-12-24 1984-07-06 Hitachi Ltd 圧力感知素子を有する半導体装置とその製造法
JPS6080281A (ja) * 1983-10-07 1985-05-08 Sumitomo Electric Ind Ltd 半導体圧力センサ及びその製造方法
JPS6097677A (ja) * 1983-11-01 1985-05-31 Sumitomo Electric Ind Ltd 半導体圧力センサ
JPS60126871A (ja) * 1983-12-14 1985-07-06 Hitachi Ltd 半導体感圧装置とその製造法
JPH0712086B2 (ja) * 1984-01-27 1995-02-08 株式会社日立製作所 ダイヤフラムセンサの製造方法
JPS61166082A (ja) * 1985-01-17 1986-07-26 Sumitomo Electric Ind Ltd 半導体圧力センサ及びその製造方法
US4672354A (en) * 1985-12-05 1987-06-09 Kulite Semiconductor Products, Inc. Fabrication of dielectrically isolated fine line semiconductor transducers and apparatus
JPH01155227A (ja) * 1987-12-11 1989-06-19 Aisin Seiki Co Ltd 多層薄膜絶縁層
JP2696894B2 (ja) * 1988-03-19 1998-01-14 株式会社デンソー 半導体圧力センサ
US4994781A (en) * 1988-04-07 1991-02-19 Sahagen Armen N Pressure sensing transducer employing piezoresistive elements on sapphire
US4885621A (en) * 1988-05-02 1989-12-05 Delco Electronics Corporation Monolithic pressure sensitive integrated circuit
JPH0716014B2 (ja) * 1988-05-30 1995-02-22 三菱電機株式会社 半導体圧力センサ
US5095349A (en) * 1988-06-08 1992-03-10 Nippondenso Co., Ltd. Semiconductor pressure sensor and method of manufacturing same
JPH02100372A (ja) * 1988-10-06 1990-04-12 Fuji Electric Co Ltd 半導体圧力センサ
US5095401A (en) * 1989-01-13 1992-03-10 Kopin Corporation SOI diaphragm sensor
JPH02237166A (ja) * 1989-03-10 1990-09-19 Mitsubishi Electric Corp 半導体圧力センサ
US5088329A (en) * 1990-05-07 1992-02-18 Sahagen Armen N Piezoresistive pressure transducer
JPH0476960A (ja) * 1990-07-19 1992-03-11 Mitsubishi Electric Corp 圧力検出装置
US5074152A (en) * 1990-12-24 1991-12-24 Motorola, Inc. Piezoresistive transducer with low drift output voltage
US5220838A (en) * 1991-03-28 1993-06-22 The Foxboro Company Overpressure-protected, differential pressure sensor and method of making the same
JP2824719B2 (ja) * 1992-09-09 1998-11-18 三菱電機株式会社 半導体圧力センサおよびその製造方法
US5332469A (en) * 1992-11-12 1994-07-26 Ford Motor Company Capacitive surface micromachined differential pressure sensor

Also Published As

Publication number Publication date
EP0672899A2 (de) 1995-09-20
US5672551A (en) 1997-09-30
EP0672899B1 (de) 1999-10-06
DE69512544T2 (de) 2000-05-25
EP0672899A3 (de) 1996-07-10

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee